AUIRFR4615TR [INFINEON]
Advanced Process Technology Low On-Resistance; 先进的工艺技术低导通电阻
| 型号： | AUIRFR4615TR |
| 厂家： | 
Infineon |
| 描述： | Advanced Process Technology Low On-Resistance |
| 文件： | 总13页 (文件大小：295K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD -96398A
AUTOMOTIVE GRADE
AUIRFR4615
AUIRFU4615
Features
HEXFET® Power MOSFET
l
l
l
l
l
l
l
Advanced Process Technology
D
S
LowOn-Resistance
175°COperatingTemperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free,RoHSCompliant
Automotive Qualified *
VDSS
150V
34m
42m
33A
RDS(on) typ.
G
max.
ID
Description
D
D
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniquestoachieveextremelylowon-resistancepersilicon
area. Additional features of this design are a 175°C junction
operating temperature, fast switching speed and improved
repetitive avalanche rating . These features combine to make
thisdesignanextremelyefficientandreliabledeviceforusein
S
S
D
G
G
DPak
AUIRFR4615
IPAK
AUIRFU4615
Automotiveapplicationsandawidevarietyofotherapplications.
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are
stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specificationsisnotimplied.Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability.
The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient
temperature (TA) is 25°C, unless otherwise specified.
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Max.
33
Units
ID @ TC = 25°C
ID @ TC = 100°C
IDM
24
A
140
PD @TC = 25°C
W
144
Maximum Power Dissipation
Linear Derating Factor
0.96
W/°C
V
VGS
± 20
109
Gate-to-Source Voltage
Single Pulse Avalanche Energy
EAS (Thermally limited)
mJ
A
Avalanche Current
IAR
See Fig. 14, 15, 22a, 22b,
Repetitive Avalanche Energy
EAR
mJ
38
Peak Diode Recovery
dv/dt
TJ
V/ns
-55 to + 175
Operating Junction and
TSTG
°C
Storage Temperature Range
Soldering Temperature, for 10 seconds
300(1.6mm from case)
Thermal Resistance
Parameter
Typ.
–––
–––
–––
Max.
1.045
50
Units
Rθ
Junction-to-Case
JC
Rθ
°C/W
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
JA
RθJA
110
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
10/04/11
AUIRFR/U4615
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Min. Typ. Max. Units
150 ––– –––
––– 0.19 ––– V/°C Reference to 25°C, ID = 5mA
Conditions
VGS = 0V, ID = 250μA
V(BR)DSS
V
V
/ T
(BR)DSS Δ
Δ
J
RDS(on)
VGS(th)
–––
3.0
35
34
42
VGS = 10V, ID = 21A
VDS = VGS, ID = 100μA
VDS = 50V, ID = 21A
m
V
Ω
–––
5.0
gfs
IDSS
Forward Transconductance
––– –––
20
S
Drain-to-Source Leakage Current
––– –––
V
V
V
V
DS = 150V, VGS = 0V
DS = 150V, VGS = 0V, TJ = 125°C
GS = 20V
μA
––– ––– 250
––– ––– 100
––– ––– -100
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
nA
GS = -20V
RG(int)
–––
2.7
–––
Ω
Dynamic @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
Qg
Total Gate Charge
–––
–––
–––
–––
–––
–––
–––
–––
26
8.6
9.0
17
15
35
25
20
ID = 21A
DS = 75V
Qgs
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
–––
–––
V
nC
Qgd
VGS = 10V
Qsync
ID = 21A, VDS =0V, VGS = 10V
VDD = 98V
td(on)
tr
ID = 21A
ns
td(off)
tf
Turn-Off Delay Time
Fall Time
R = 7.3
Ω
G
VGS = 10V
Ciss
Input Capacitance
––– 1750 –––
––– 155 –––
VGS = 0V
Coss
Output Capacitance
Reverse Transfer Capacitance
V
DS = 50V
Crss
–––
40
–––
ƒ = 1.0MHz
(See Fig.5)
GS = 0V, VDS = 0V to 120V (See Fig.11)
pF
Coss eff. (ER)
Coss eff. (TR)
––– 179 –––
––– 382 –––
V
V
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
GS = 0V, VDS = 0V to 120V
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
S
IS
Continuous Source Current
MOSFET symbol
––– –––
33
(Body Diode)
Pulsed Source Current
(Body Diode)
showing the
integral reverse
A
G
ISM
––– ––– 140
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
––– –––
1.3
–––
–––
V
TJ = 25°C, IS = 21A, VGS = 0V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VR = 100V,
IF = 21A
di/dt = 100A/μs
–––
–––
70
83
ns
Qrr
Reverse Recovery Charge
––– 177 –––
––– 247 –––
nC
A
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
–––
4.9
–––
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
ꢀ Coss eff. (TR) is a fixed capacitance that gives the same charging time
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.51mH
RG = 25Ω, IAS = 21A, VGS =10V. Part not recommended for use
above this value .
ISD ≤ 21A, di/dt ≤ 549A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
as Coss while VDS is rising from 0 to 80% VDSS
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS
.
.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application
note #AN-994
Rθ is measured at TJ approximately 90°C
2
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AUIRFR/U4615
Qualification Information†
Automotive
††
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive level.
Moisture Sensitivity Level
MSL1
N/A
D PAK
I-PAK
Class M3(+/- 400V )†††
Machine Model
AEC-Q101-002
Class H1B(+/- 1000V )†††
AEC-Q101-001
Human Body Model
ESD
Class C5(+/- 2000V )†††
AEC-Q101-005
Charged Device
Model
Yes
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
††
††† Highest passing voltage
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3
AUIRFR/U4615
1000
100
10
1000
VGS
15V
12V
VGS
15V
12V
TOP
TOP
10V
10V
100
10
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM
BOTTOM
5.0V
1
1
5.0V
0.1
0.01
60μs PULSE WIDTH
Tj = 175°C
≤
60μs PULSE WIDTH
Tj = 25°C
≤
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
10
3.0
2.5
2.0
1.5
1.0
0.5
I
= 21A
D
V
= 10V
GS
T = 175°C
J
T = 25°C
J
1
V
= 50V
DS
≤
60μs PULSE WIDTH
0.1
2
4
6
8
10 12 14
16
-60 -40 -20 0 20 40 60 80 100120140160180
, Junction Temperature (°C)
T
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
100000
10000
1000
100
14.0
V
= 0V,
= C
f = 1 MHZ
GS
I = 21A
D
C
C
C
+ C , C
SHORTED
ds
iss
gs
gd
12.0
= C
rss
oss
gd
= C + C
V
V
= 120V
= 75V
DS
DS
ds
gd
10.0
8.0
6.0
4.0
2.0
0.0
VDS= 30V
C
iss
C
oss
C
rss
10
1
10
100
1000
0
5
10
15
20
25
30
35
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
4
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AUIRFR/U4615
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100μsec
1msec
T
= 175°C
10msec
J
T
= 25°C
J
DC
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
1.4
GS
0.1
1.0
1
10
100
1000
0.2
0.4
V
0.6
0.8
1.0
1.2
1.6
V
, Drain-to-Source Voltage (V)
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
40
190
185
180
175
170
165
160
155
150
145
140
Id = 5mA
35
30
25
20
15
10
5
0
25
50
75
100
125
150
175
-60 -40 -20 0 20 40 60 80 100120140160180
T
, Case Temperature (°C)
T
, Temperature ( °C )
Fig 9. MaxiCmum Drain Current vs.
J
Fig 10. Drain-to-Source Breakdown Voltage
Case Temperature
3.0
500
I
D
450
400
350
300
250
200
150
100
50
TOP
2.8A
5.3A
BOTTOM 21A
2.5
2.0
1.5
1.0
0.5
0.0
0
-20
0
20 40 60 80 100 120 140 160
Drain-to-Source Voltage (V)
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
V
J
DS,
Fig 11. Typical COSS Stored Energy
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
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5
AUIRFR/U4615
10
1
0.1
D = 0.50
0.20
0.10
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) τi (sec)
0.02324
0.26212
0.50102
0.25880
0.000008
0.000106
0.001115
0.005407
τ
τ
J τJ
τ
0.05
0.02
0.01
Cτ
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
10
1
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
Tstart =25°C (Single Pulse)
0.01
0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
120
100
80
60
40
20
0
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 22a,22b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
TOP
BOTTOM 1.0% Duty Cycle
= 21A
Single Pulse
I
D
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
25
50
75
100
125
150
175
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Starting T , Junction Temperature (°C)
J
Fig 15. Maximum Avalanche Energy vs. Temperature
6
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AUIRFR/U4615
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
30
25
20
15
10
5
I = 14A
F
V
= 100V
R
T = 25°C
J
T = 125°C
J
I
I
= 100μA
D
D
= 250uA
ID = 1.0mA
ID = 1.0A
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
200
400
600
800
1000
T , Temperature ( °C )
J
di /dt (A/μs)
F
Fig. 17 - Typical Recovery Current vs. dif/dt
Fig 16. Threshold Voltage vs. Temperature
35
800
I = 21A
I = 14A
F
F
30
25
20
15
10
5
700
600
500
400
300
200
100
V
= 100V
V
= 100V
R
R
T = 25°C
T = 25°C
J
J
T = 125°C
J
T = 125°C
J
0
0
200
400
600
800
1000
0
200
400
600
800
1000
di /dt (A/μs)
di /dt (A/μs)
F
F
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig. 19 - Typical Stored Charge vs. dif/dt
1000
I = 21A
F
V
900
800
700
600
500
400
300
200
100
= 100V
R
T = 25°C
J
T = 125°C
J
0
200
400
600
800
1000
di /dt (A/μs)
F
Fig. 20 - Typical Stored Charge vs. dif/dt
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7
AUIRFR/U4615
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
CircuitLayoutConsiderations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
• dv/dtcontrolledbyRG
RG
+
-
Body Diode
Forward Drop
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
InductorCurrent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
2
GS
Ω
0.01
t
p
I
AS
Fig 22b. Unclamped Inductive Waveforms
Fig 22a. Unclamped Inductive Test Circuit
RD
VDS
V
DS
90%
VGS
D.U.T.
RG
+
VDD
-
VGS
10%
PulseWidth ≤ 1 µs
Duty Factor ≤ 0.1 %
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 23a. Switching Time Test Circuit
Fig 23b. Switching Time Waveforms
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50KΩ
.2μF
12V
.3μF
+
V
DS
D.U.T.
-
Vgs(th)
V
GS
3mA
I
I
D
G
Qgs1
Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 24a. Gate Charge Test Circuit
Fig 24b. Gate Charge Waveform
8
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AUIRFR/U4615
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
PartNumber
AUFR4615
DateCode
Y= Year
WW= Work Week
A= Automotive, Lead Free
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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9
AUIRFR/U4615
I-Pak (TO-251AA) Package Outline ( Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
PartNumber
AUFU4615
DateCode
Y= Year
WW= Work Week
A= Automotive, Lead Free
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRFR/U4615
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
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11
AUIRFR/U4615
Ordering Information
Base part
Package Type
Standard Pack
Complete Part Number
Form
Quantity
AUIRFR4615
DPak
IPak
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Tube
75
AUIRFR4615
AUIRFR4615TR
AUIRFR4615TRL
AUIRFR4615TRR
AUIRFU4615
2000
3000
3000
75
AUIRFU4615
12
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AUIRFR/U4615
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve
the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily
performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products
and applications using IR components. To minimize the risks with customer products and applications, customers should
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Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is
accompaniedbyallassociatedwarranties,conditions,limitations,andnotices. Reproductionofthisinformationwithalterations
isanunfairanddeceptivebusinesspractice. IRisnotresponsibleorliableforsuchaltereddocumentation. Informationofthird
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voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business
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IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the
body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product
could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such
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and manufactured to meet DLA military specifications required by certain military, aerospace or other applications. Buyers
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products, is solely at the Buyer’s own risk and that they are solely responsible for compliance with all legal and regulatory
requirements in connection with such use.
IRproductsareneitherdesignednorintendedforuseinautomotiveapplicationsorenvironmentsunlessthespecificIRproducts
are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”.
Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be
responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLDHEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel:(310)252-7105
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13
相关型号：
AUIRFR48Z
Power Field-Effect Transistor, 42A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3
INFINEON
AUIRFR48ZTR
Power Field-Effect Transistor, 42A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3
INFINEON
AUIRFR48ZTRL
Power Field-Effect Transistor, 42A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3
INFINEON
AUIRFR48ZTRR
Power Field-Effect Transistor, 42A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, ROHS COMPLIANT, PLASTIC, DPAK-3
INFINEON
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