AUIRFS4127 [INFINEON]

Advanced Process Technology;


型号：	AUIRFS4127
厂家：	Infineon
描述：	Advanced Process Technology
文件：	总12页 (文件大小：528K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

AUIRFS4127

AUIRFSL4127

Features

HEXFET^®Power MOSFET

 Advanced Process Technology

 Ultra Low On-Resistance

175°C Operating Temperature

Fast Switching

 Repetitive Avalanche Allowed up to Tjmax

 Lead-Free, RoHS Compliant

 Automotive Qualified *

V_DSS

200V

R_DS(on)typ.

max

18.6m

22m

I_D

72A

Description

Specifically designed for Automotive applications, this

HEXFET® Power MOSFET utilizes the latest processing

techniques to achieve extremely low on-resistance per silicon

area. Additional features of this design are a 175°C junction

operating temperature, fast switching speed and improved

repetitive avalanche rating . These features combine to make

this design an extremely efficient and reliable device for use in

Automotive applications and a wide variety of other applications.

D²Pak

TO-262

AUIRFS4127

AUIRFSL4127

Gate

Drain

Source

Standard Pack

Form

Base part number

Package Type

Orderable Part Number

Quantity

AUIRFSL4127

TO-262

Tube

AUIRFSL4127

AUIRFS4127

Tube

AUIRFS4127

D²-Pak

Tape and Reel Left

800

AUIRFS4127TRL

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress

ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not

implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance

and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless

otherwise specified.

Parameter

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current 

Max.

Units

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_DM

300

P_D@T_C= 25°C

Power Dissipation

Linear Derating Factor

Gate-to-Source Voltage

375

2.5

± 20

W/°C

V_GS

V/ns

dv/dt

Peak Diode Recovery 

250

E_{AS (Thermally limited)}

Single Pulse Avalanche Energy 

Avalanche Current 

I_AR

See Fig. 14, 15, 22a, 22b

E_AR

Repetitive Avalanche Energy 

T_J

T_STG

Operating Junction and

Storage Temperature Range

Soldering Temperature for 10 seconds

-55 to + 175

°C

300(1.6mm from case)

Thermal Resistance

Symbol

R_JC

R_JA

Parameter

Typ.

–––

Max.

0.4

Units

Junction-to-Case 

Junction-to-Ambient 

°C/W

HEXFET® is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

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AUIRFS/SL4127

Static Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Symbol

V_(BR)DSS

Parameter

Min. Typ. Max. Units

200 ––– –––

––– 0.23 ––– V/°C Reference to 25°C, I_D= 5mA

Conditions

V_GS= 0V, I_D= 250µA

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

V_(BR)DSS/T_J

R_DS(on)

V_GS(th)

––– 18.6

5.0

–––

_GS= 10V, I_D= 44A 

V_DS= V_GS, I_D= 250µA

_DS= 50V, I_D= 44A

_DS= 200V, V_GS= 0V

m

3.0

–––

gfs

Forward Trans conductance

–––

I_DSS

I_GSS

Drain-to-Source Leakage Current

µA

250

_DS= 200V, V_GS= 0V, T_J= 125°C

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Internal Gate Resistance

–––

––– -100

3.0 –––

100

V_GS= 20V

_GS= -20V

R_G



Dynamic Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Symbol

Parameter

Total Gate Charge

Min. Typ. Max. Units

––– 100 150

Conditions

Q_g

I_D= 44A

_DS= 100V

_GS= 10V 

Q_gs

Q_gd

Q_sync

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Total Gate Charge Sync. (Q_g- Q_gd)

–––

t_d(on)

t_r

t_d(off)

t_f

C_iss

C_oss

C_rss

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

–––

V_DD= 130V

I_D= 44A

R_G= 2.7

_GS= 10V 

V_GS= 0V

_DS= 50V

––– 5380 –––

––– 410 –––

–––

ƒ = 1.0 MHz (See Fig. 5)

–––

_osseff. (ER) Effective Output Capacitance (Energy Related) ––– 360 –––

_osseff. (TR) Effective Output Capacitance (Time Related) ––– 590 –––

V_GS= 0V, V_DS= 0V to 160V 

V_GS= 0V, V_DS= 0V to 160V 

Diode Characteristics

Symbol Parameter

Min. Typ. Max. Units

Conditions

MOSFET symbol

showing the

integral reverse

p-n junction diode.

T_J= 25°C, I_S= 44A, V_GS= 0V 

Continuous Source Current

(Body Diode)

I_S

–––

Pulsed Source Current

(Body Diode) 

I_SM

300

V_SD

t_rr

Diode Forward Voltage

–––

136

139

458

688

8.3

1.3

–––

T_J= 25°C

T_J= 125°C

T_J= 25°C

T_J= 125°C

T_J= 25°C

V_R= 100V,

I_F= 44A

di/dt = 100A/µs

Reverse Recovery Time

Q_rr

Reverse Recovery Charge

Reverse Recovery Current

I_RRM

Notes:

Repetitive rating; pulse width limited by max. junction temperature.

 Limited by T_Jmax, starting T_J= 25°C, L = 0.26mH, R_G= 25, I_AS= 44A, V_GS=10V. Part not recommended for use above this value.

I_SD 44A, di/dt  760A/µs, V_DD V_(BR)DSS, T_J175°C.

Pulse width  400µs; duty cycle  2%.

 C_osseff. (TR) is a fixed capacitance that gives the same charging time as C_osswhile V_DSis rising from 0 to 80% V_DSS

 C_osseff. (ER) is a fixed capacitance that gives the same energy as C_osswhile V_DSis rising from 0 to 80% V_DSS

When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques

refer to application note #AN-994.: http://www.irf.com/technical-info/appnotes/an-994.pdf

 R_is measured at T_Japproximately 90°C.

R_JCvalue shown is at time zero.

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AUIRFS/SL4127

1000

100

1000

100

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

VGS

15V

10V

8.0V

7.0V

6.0V

5.5V

5.0V

4.5V

TOP

BOTTOM

4.5V

0.1

0.01

 60µs PULSE WIDTH

Tj = 175°C

 60µs PULSE WIDTH

Tj = 25°C

4.5V

0.1

100

0.1

100

, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

3.5

3.0

2.5

2.0

1.5

1.0

0.5

1000

100

= 44A

= 50V

 60µs PULSE WIDTH

= 10V

= 175°C

= 25°C

0.1

-60 -40 -20

20 40 60 80 100 120 140 160 180

3.0

4.0

5.0

6.0

7.0

8.0

, Junction Temperature (°C)

, Gate-to-Source Voltage (V)

Fig 4. Normalized On-Resistance vs. Temperature

Fig 3. Typical Transfer Characteristics

8000

6000

4000

2000

= 0V,

f = 1 MHZ

= C + C , C SHORTED

= 44A

iss

gd ds

= 160V

= 100V

= 40V

= C

rss

oss

= C + C

iss

oss

rss

100

120

, Drain-to-Source Voltage (V)

Total Gate Charge (nC)

Fig 6. Typical Gate Charge vs.

Fig 5. Typical Capacitance vs. Drain-to-Source Voltage

Gate-to-Source Voltage

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AUIRFS/SL4127

1000

100

1000

100

OPERATION IN THIS AREA

LIMITED BY R

(on)

100µsec

= 175°C

1msec

= 25°C

10msec

Tc = 25°C

Tj = 175°C

Single Pulse

= 0V

1.2

0.1

0.0

0.2

0.4

0.6

0.8

1.0

1.4

100

1000

, Drain-toSource Voltage (V)

, Source-to-Drain Voltage (V)

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode Forward Voltage

260

Id = 5mA

240

220

200

180

-60 -40 -20 0 20 40 60 80 100120140160180

, Temperature ( °C )

100

125

150

175

, Case Temperature (°C)

Fig 9. Maximum Drain Current vs. Case Temperature

Fig 10. Drain-to-Source Breakdown Voltage

1000

8.0

TOP

8.2A

13A

44A

800

600

400

200

6.0

4.0

2.0

0.0

BOTTOM

100

125

150

175

120

160

200

Starting T , Junction Temperature (°C)

Drain-to-Source Voltage (V)

DS,

Fig 11. Typical C_ossStored Energy

Fig 12. Maximum Avalanche Energy vs. Drain Current

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AUIRFS/SL4127

D = 0.50

0.20

0.1

0.10

0.05

0.02

0.01

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

SINGLE PULSE

( THERMAL RESPONSE )

0.001

1E-006

1E-005

0.0001

0.001

0.01

0.1

, Rectangular Pulse Duration (sec)

Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case

100

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming Tj = 150°C and

Tstart =25°C (Single Pulse)

Duty Cycle = Single Pulse

0.01

0.05

0.10

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming  j = 25°C and

Tstart = 150°C.

0.1

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

tav (sec)

Fig 14. Avalanche Current vs. Pulse Width

250

200

150

100

TOP

Single Pulse

Notes on Repetitive Avalanche Curves , Figures 14, 15:

(For further info, see AN-1005 at www.irf.com)

1.Avalanche failures assumption:

BOTTOM 1% Duty Cycle

= 44A

Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T_jmax. This is validated for every

part type.

2. Safe operation in Avalanche is allowed as long asT_jmaxis not

exceeded.

3. Equation below based on circuit and waveforms shown in Figures

22a, 22b.

4. P_{D (ave)}= Average power dissipation per single avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage

increase during avalanche).

6. I_av= Allowable avalanche current.

7. T = Allowable rise in junction temperature, not to exceed T_jmax

(assumed as 25°C in Figure 14, 15).

t_av= Average time in avalanche.

100

125

150

175

D = Duty cycle in avalanche = tav ·f

Z_thJC(D, t_av) = Transient thermal resistance, see Figures 14)

Starting T , Junction Temperature (°C)

PD (ave) = 1/2 ( 1.3·BV·I_av) = T/ Z_thJC

_av= 2T/ [1.3·BV·Z_th]

E_{AS (AR)}= P_{D (ave)· av}

Fig 15. Maximum Avalanche Energy vs. Temperature

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AUIRFS/SL4127

6.0

5.0

4.0

3.0

2.0

1.0

= 1.0A

= 1.0mA

= 250µA

= 29A

= 100V

= 125°C

= 25°C

100 200 300 400 500 600 700 800 900 1000

-75 -50 -25

25 50 75 100 125 150 175

, Temperature ( °C )

di / dt - (A / µs)

Fig 16. Threshold Voltage vs. Temperature

Fig 17. Typical Recovery Current vs. dif/dt

3000

2500

2000

1500

1000

= 44A

I = 29A

= 100V

= 125°C

= 25°C

= 100V

= 125°C

= 25°C

500

100 200 300 400 500 600 700 800 900 1000

di / dt - (A / µs)

Fig 18. Typical Recovery Current vs. dif/dt

Fig 19. Typical Stored Charge vs. dif/dt

3000

2500

2000

1500

1000

500

= 44A

= 100V

= 125°C

= 25°C

100 200 300 400 500 600 700 800 900 1000

di / dt - (A / µs)

Fig 20. Typical Stored Charge vs. dif/dt

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Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET^®Power MOSFETs

(BR)DSS

15V

DRIVER

D.U.T

20V

0.01



Fig 22a. Unclamped Inductive Test Circuit

Fig 22b. Unclamped Inductive Waveforms

Fig 23a. Switching Time Test Circuit

Fig 23b. Switching Time Waveforms

Vds

Vgs

VDD

Vgs(th)

Qgs1

Qgs2

Qgd

Qgodr

Fig 24b. Gate Charge Waveform

Fig 24a. Gate Charge Test Circuit

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AUIRFS/SL4127

TO-262 Package Outline (Dimensions are shown in millimeters (inches)

TO-262 Part Marking Information

Part Number

AUFSL4127

Date Code

Y= Year

YWWA

IR Logo

WW= Work Week



Lot Code

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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AUIRFS/SL4127

D²Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches))

D²Pak (TO-263AB) Part Marking Information

Part Number

AUFS4127

Date Code

Y= Year

WW= Work Week

YWWA

IR Logo



Lot Code

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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AUIRFS/SL4127

D²Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches))

TRR

1.60 (.063)

1.50 (.059)

1.60 (.063)

1.50 (.059)

4.10 (.161)

3.90 (.153)

0.368 (.0145)

0.342 (.0135)

FEED DIRECTION

TRL

11.60 (.457)

11.40 (.449)

1.85 (.073)

1.65 (.065)

24.30 (.957)

23.90 (.941)

15.42 (.609)

15.22 (.601)

1.75 (.069)

1.25 (.049)

10.90 (.429)

10.70 (.421)

4.72 (.136)

4.52 (.178)

16.10 (.634)

15.90 (.626)

FEED DIRECTION

13.50 (.532)

12.80 (.504)

27.40 (1.079)

23.90 (.941)

330.00

(14.173)

MAX.

60.00 (2.362)

MIN.

30.40 (1.197)

MAX.

NOTES :

1. COMFORMS TO EIA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

26.40 (1.039)

24.40 (.961)

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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AUIRFS/SL4127

Qualification Information^†

Automotive

(per AEC-Q101)^††

Qualification Level

Comments: This part number(s) passed Automotive qualification. IR’s

Industrial and Consumer qualification level is granted by extension of the

higher Automotive level.

3L-D2 PAK

3L– TO-262

MSL1

Moisture Sensitivity Level

N/A

Class H2 (+/- 4000V)^††

Human Body Model

ESD

AEC-Q101-001

Class C5 (+/- 2000V)^††

AEC-Q101-005

Yes

Charged Device Model

RoHS Compliant

†

Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/

†† Highest passing voltage.

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AUIRFS/SL4127

IMPORTANT NOTICE

Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve

the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services

at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow

automotive industry and / or customer specific requirements with regards to product discontinuance and process change

notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.

IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s

standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this

warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily

performed.

IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products

and applications using IR components. To minimize the risks with customer products and applications, customers should

provide adequate design and operating safeguards.

Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is

accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with altera-

tions is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Infor-

mation of third parties may be subject to additional restrictions.

Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or

service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive

business practice. IR is not responsible or liable for any such statements.

IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into

the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR

product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for

any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, em-

ployees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable

attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or

unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product.

Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense, are de-

signed and manufactured to meet DLA military specifications required by certain military, aerospace or other applications.

Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in applications requiring

military grade products, is solely at the Buyer’s own risk and that they are solely responsible for compliance with all legal and

regulatory requirements in connection with such use.

IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR

products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designa-

tion “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will

not be responsible for any failure to meet such requirements.

For technical support, please contact IR’s Technical Assistance Center

http://www.irf.com/technical-info/

WORLD HEADQUARTERS:

101 N. Sepulveda Blvd., El Segundo, California 90245

Tel: (310) 252-7105

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AUIRFS4127 [INFINEON]

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