AUIRFS8407-7P_技术文档

AUTOMOTIVE GRADE

AUIRFS8407-7P

Features

HEXFET^®Power MOSFET



AdvancedProcessTechnology

D

S

NewUltraLowOn-Resistance

175°COperatingTemperature

Fast Switching

RepetitiveAvalancheAlloweduptoTjmax

Lead-Free,RoHSCompliant

AutomotiveQualified*

V_DSS

40V

R_DS(on)typ.

max.

1.0mΩ

1.3mΩ

G

I_D

306A

(Silicon Limited)

Description

I_D

240A

(Package Limited)

Specifically designed for Automotive applications, this

HEXFET® Power MOSFET utilizes the latest processing

techniquestoachieveextremelylowon-resistancepersilicon

area. Additional features of this design are a 175°C junction

operating temperature, fast switching speed and improved

repetitive avalanche rating. These features combine to make

thisdesignanextremelyefficientandreliabledeviceforusein

Automotiveapplicationsandwidevarietyofotherapplications.

D

S

Applications

G

D²Pak7Pin



Electric Power Steering (EPS)

Battery Switch

Start/Stop Micro Hybrid

HeavyLoads

G

Gate

D

S

Drain

Source

DC-DCApplications

Base part number

Package Type

Standard Pack

Orderable Part Number

Form

Tube

Tape and Reel Left

Tape and Reel Right

Quantity

50

AUIRFS8407-7P

AUIRFS8407-7TRL

AUIRFS8407-7TRR

AUIRFS8407-7P

D2Pak-7PIN

800

Absolute Maximum Ratings

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and

functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-

maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under

board mounted and still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.

Symbol

I_D@ T_C= 25°C

I_D@ T_C= 100°C

I_D@ T_C= 25°C

I_DM

Parameter

Max.

306

Units

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

Continuous Drain Current, V_GS@ 10V (Package Limited)

216



A

240

1040

Pulsed Drain Current



231

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

W

1.5

W/°C

V

± 20

V_GS

Gate-to-Source Voltage

Single Pulse Avalanche Energy 

E_{AS (Thermally limited)}

344

508

mJ

E_{AS (tested)}

I_AR

Single Pulse Avalanche Energy Tested Value

Avalanche Current





See Fig. 14, 15, 24a, 24b

A

Repetitive Avalanche Energy 

Operating Junction and

E_AR

mJ

-55 to + 175

300

T_J

°C

T_STG

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case)

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

April 30, 2013

1

AUIRFS8407-7P

Thermal Resistance

Symbol

Parameter



Typ.

–––

Max.

0.65

40

Units

°C/W

R_θJC

Junction-to-Case

R_θ

Junction-to-Ambient (PCB Mount)

–––



JA

Static @ T_J= 25°C (unless otherwise specified)

Symbol

V_(BR)DSS

Parameter

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Min. Typ. Max. Units

40 ––– –––

––– 0.035 ––– V/°C Reference to 25°C, I_D= 1.0mA

Conditions

V_GS= 0V, I_D= 250μA

V



Δ

_(BR)DSS/ T_J

V



Ω

V

R_DS(on)

V_GS(th)

I_DSS

–––

2.2

1.0

1.3

3.9

1.0

m

V_GS= 10V, I_D= 100A

V_DS= V_GS, I_D= 150μA

–––

Drain-to-Source Leakage Current

––– –––

V

_DS= 40V, V_GS= 0V

_DS= 40V, V_GS= 0V, T_J= 125°C

μA

––– ––– 150

––– ––– 100

––– ––– -100

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

Internal Gate Resistance

V_GS= 20V

_GS= -20V

nA

V

Ω

R_G

–––

2.2

–––

Dynamic @ T_J= 25°C (unless otherwise specified)

Symbol

Parameter

Min. Typ. Max. Units

Conditions

gfs

Q_g

Forward Transconductance

122 ––– –––

S

V_DS= 10V, I_D= 100A

Total Gate Charge

––– 150 225

I_D= 100A

Q_gs

Q_gd

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Total Gate Charge Sync. (Q_g- Q_gd)

Turn-On Delay Time

–––

41

51

99

18

62

78

51

–––

V_DS=20V

nC



V_GS= 10V

Q_sync

t_d(on)

t_r

I_D= 100A, V_DS=0V, V_GS= 10V

V_DD= 20V

Rise Time

I_D= 30A

Ω

R_G= 2.7

V_GS= 10V

ns

t_d(off)

t_f

Turn-Off Delay Time



Fall Time

C_iss

C_oss

C_rss

Input Capacitance

––– 7437 –––

––– 1097 –––

––– 748 –––

––– 1314 –––

––– 1735 –––

V_GS= 0V

Output Capacitance

V

_DS= 25V

Reverse Transfer Capacitance

Effective Output Capacitance (Energy Related)

Effective Output Capacitance (Time Related)

pF ƒ = 1.0 MHz





C

_osseff. (ER)

_osseff. (TR)

V

_GS= 0V, V_DS= 0V to 32V

V_GS= 0V, V_DS= 0V to 32V

Diode Characteristics

Symbol

Parameter

Min. Typ. Max. Units

Conditions

MOSFET symbol

D

S

I_S

Continuous Source Current



––– ––– 306

(Body Diode)

showing the

integral reverse

A

V

G

I_SM

V_SD

Pulsed Source Current

––– ––– 1040



(Body Diode)

Diode Forward Voltage

p-n junction diode.



T_J= 25°C, I_S= 100A, V_GS= 0V

–––

1.0

3.5

37

38

34

36

1.8

1.3



dv/dt

t_rr

Peak Diode Recovery

––– V/ns T_J= 175°C, I_S= 100A, V_DS= 40V

Reverse Recovery Time

–––

T_J= 25°C

T_J= 125°C

T_J= 25°C

T_J= 125°C

T_J= 25°C

V_R= 34V,

ns

I_F= 100A

di/dt = 100A/μs



Q_rr

Reverse Recovery Charge

nC

A

I_RRM

t_on

Reverse Recovery Current

Forward Turn-On Time

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

 Calculated continuous current based on maximum allowable

junction temperature. Bond wire current limit is 240A. Note that

current limitations arising from heating of the device leads may

occur with some lead mounting arrangements. (Refer to AN-1140)

 Repetitive rating; pulse width limited by max. junction temperature.

 Limited by T_Jmax, starting T_J= 25°C, L = 0.069mH, R_G= 50Ω,

I_AS= 100A, V_GS=10V. Part not recommended for use above

this value.

 Pulse width ≤ 400μs; duty cycle ≤ 2%.

 C_osseff. (TR) is a fixed capacitance that gives the same charging time

as C_osswhile V_DSis rising from 0 to 80% V_DSS

 C_osseff. (ER) is a fixed capacitance that gives the same energy as

C_osswhile V_DSis rising from 0 to 80% V_DSS

 When mounted on 1" square PCB (FR-4 or G-10 Material).

For recommended footprint and soldering techniques

refer to application note #AN-994.

.

 R_θis measured at T_Japproximately 90°C.

 R_θJCvalue shown is at time zero.

 I_SD≤ 100A, di/dt ≤ 1288A/μs, V_DD≤ V_(BR)DSS, T_J≤ 175°C.

April 30, 2013

2

AUIRFS8407-7P

10000

1000

100

10

10000

1000

100

VGS

15V

10V

8.0V

7.0V

6.5V

6.0V

5.5V

5.0V

VGS

15V

10V

8.0V

7.0V

6.5V

6.0V

5.5V

5.0V

TOP

BOTTOM

5.0V

60μs PULSE WIDTH

Tj = 175°C

60μs PULSE WIDTH

Tj = 25°C

≤

1

10

0.1

1

10

100

0.1

1

10

100

V

, Drain-to-Source Voltage (V)

V

, Drain-to-Source Voltage (V)

DS

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

10000

1000

100

10

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

I

= 100A

= 10V

D

V

GS

T = 175°C

J

T

V

= 25°C

= 10V

J

DS

≤

60μs PULSE WIDTH

1.0

2

3

4

5

6

7

8

9

-60 -40 -20 0 20 40 60 80 100120140160180

, Junction Temperature (°C)

T

J

V

, Gate-to-Source Voltage (V)

GS

Fig 4. Normalized On-Resistance vs. Temperature

Fig 3. Typical Transfer Characteristics

100000

10000

1000

14.0

V

= 0V,

= C

f = 1 MHZ

GS

I

= 100A

C

+ C , C

SHORTED

ds

D

iss

gs

gd

12.0

10.0

8.0

= C

rss

oss

gd

= C + C

V

= 32V

= 20V

DS

ds

gd

C

iss

C

oss

rss

6.0

4.0

2.0

100

0.0

1

10

, Drain-to-Source Voltage (V)

100

0

20 40 60 80 100 120 140 160 180 200

V

DS

Q , Total Gate Charge (nC)

G

Fig 5. Typical Capacitance vs. Drain-to-Source Voltage

Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage

3

April 30, 2013

AUIRFS8407-7P

10000

1000

100

10

10000

1000

100

10

OPERATION IN THIS AREA

LIMITED BY R

(on)

DS

100μsec

1msec

T

= 175°C

J

Limited by

package

T

= 25°C

J

10msec

DC

1

Tc = 25°C

Tj = 175°C

Single Pulse

V

GS

= 0V

1.0

0.1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

, Source-to-Drain Voltage (V)

0.1

1

10

100

V

, Drain-toSource Voltage (V)

SD

DS

Fig 8. Maximum Safe Operating Area

Fig 7. Typical Source-Drain Diode

Forward Voltage

350

300

250

200

150

100

50

49

48

47

46

45

44

43

42

41

40

Limited By Package

Id = 1.0mA

0

25

50

75

100

125

150

175

-60 -40 -20 0 20 40 60 80 100120140160180

T

, Case Temperature (°C)

T

, Temperature ( °C )

C

J

Fig 9. Maximum Drain Current vs.

Fig 10. Drain-to-Source Breakdown Voltage

Case Temperature

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

-0.1

1400

I

D

1200

1000

800

600

400

200

0

TOP

22A

46A

BOTTOM 100A

-5

0

5

10 15 20 25 30 35 40

Drain-to-Source Voltage (V)

25

50

75

100

125

150

175

Starting T , Junction Temperature (°C)

J

V

DS,

Fig 11. Typical C_OSSStored Energy

Fig 12. Maximum Avalanche Energy vs. DrainCurrent

April 30, 2013

4

AUIRFS8407-7P

1

0.1

D = 0.50

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE

( THERMAL RESPONSE )

0.001

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.0001

1E-006

1E-005

0.0001

0.001

0.01

0.1

1

t

, Rectangular Pulse Duration (sec)

1

Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case

1000

100

10

Allowed avalanche Current vs avalanche

Δ

pulsewidth, tav, assuming Tj = 150°C and

Tstart =25°C (Single Pulse)

Allowed avalanche Current vs avalanche

ΔΤ

pulsewidth, tav, assuming

Tstart = 150°C.

j = 25°C and

1

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

tav (sec)

Fig 14. Typical Avalanche Current vs.Pulsewidth

Notes on Repetitive Avalanche Curves , Figures 14, 15

(For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a temperature far in

excess of T_jmax. This is validated for every part type.

2. Safe operation in Avalanche is allowed as long asT_jmaxis not exceeded.

3. Equation below based on circuit and waveforms shown in Figures 24a, 24b.

4. P_{D (ave)}= Average power dissipation per single avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase

during avalanche).

6. I_av= Allowable avalanche current.

7. ΔT = Allowable rise in junction temperature, not to exceed T_jmax(assumed as

25°C in Figure 14, 15).

t_{av =}Average time in avalanche.

D = Duty cycle in avalanche = t_av·f

350

300

250

200

150

100

50

TOP

BOTTOM 1.0% Duty Cycle

= 100A

Single Pulse

I

D

Z_thJC(D, t_av) = Transient thermal resistance, see Figures 13)

P_{D (ave)}= 1/2 ( 1.3·BV·I_av) = ΔT/ Z_thJC

0

I_av= 2ΔT/ [1.3·BV·Z_th]

E_{AS (AR)}= P_{D (ave)}·t_av

25

50

75

100

125

150

175

Starting T , Junction Temperature (°C)

J

Fig 15. Maximum Avalanche Energy vs. Temperature

5

April 30, 2013

AUIRFS8407-7P

4.0

3.0

2.0

1.0

5.0

4.0

3.0

2.0

1.0

I

= 100A

D

T = 125°C

J

I

= 150μA

= 1.0mA

= 1.0A

D

T

= 25°C

J

4

6

8

10 12 14

16 18 20

-75 -50 -25

0

25 50 75 100 125 150 175

T

, Temperature ( °C )

J

V

Gate -to -Source Voltage (V)

GS,

Fig 16. On-Resistance vs. Gate Voltage

Fig 17. Threshold Voltage vs. Temperature

300

12

I = 60A

F

V

= 34V

V

= 34V

R

250

200

150

100

50

10

8

T = 25°C

J

T = 125°C

J

T = 125°C

J

6

4

2

0

200

400

600

800

1000

0

200

400

600

800

1000

di /dt (A/μs)

F

Fig. 19 - Typical Stored Charge vs. di_f/dt

Fig. 18 - Typical Recovery Current vs. di_f/dt

300

250

200

150

100

50

12

10

8

I = 100A

F

I = 100A

F

V

= 34V

V

= 34V

R

T = 25°C

J

T = 125°C

J

T = 125°C

J

6

4

2

0

200

400

600

800

1000

0

200

400

600

800

1000

di /dt (A/μs)

F

Fig. 21 - Typical Stored Charge vs. di_f/dt

Fig. 20 - Typical Recovery Current vs. di_f/dt

April 30, 2013

6

AUIRFS8407-7P

10.0

8.0

6.0

4.0

2.0

0.0

V

= 6.0V

= 7.0V

= 8.0V

=10V

GS

0

200

400

600

800 1000 1200

I , Drain Current (A)

D

Fig 22. Typical On-Resistance vs. Drain Current

7

April 30, 2013

AUIRFS8407-7P

Driver Gate Drive

P.W.

D =

D.U.T

Period

+

*

=10V

V

GS



Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

-

D.U.T. I Waveform

SD

+



-

Reverse

Recovery

Current

Body Diode Forward

_-

Current

di/dt

+

D.U.T. V Waveform

DS

Diode Recovery

dv/dt



V

DD

V_DD

Re-Applied

Voltage

•

dv/dt controlled by R_G

R_G

+

-

Body Diode

Inductor Current

Forward Drop

• Driver same type as D.U.T.

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

Inductor Curent

I

SD

Ripple

≤ 5%

* V_GS= 5V for Logic Level Devices

Fig 23. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET^®Power MOSFETs

V

(BR)DSS

15V

t

p

DRIVER

+

L

V

DS

D.U.T

AS

R

G

V

DD

-

I

A

V

20V

GS

Ω

0.01

t

p

I

AS

Fig 24b. Unclamped Inductive Waveforms

Fig 24a. Unclamped Inductive Test

Circuit

R_D

V_DS

V

DS

90%

V_GS

D.U.T.

R_G

+

V_DD

-

10V

V_GS

10%

Pulse Width ≤ 1 μs

Duty Factor ≤ 0.1 %

V

GS

t

r

t

f

d(on)

d(off)

Fig 25a. Switching Time Test Circuit

Fig 25b. Switching Time Waveforms

Id

Current Regulator

Same Type as D.U.T.

Vds

Vgs

50KΩ

.2μF

12V

.3μF

+

V

DS

D.U.T.

-

Vgs(th)

V

GS

3mA

I

D

G

Qgs1

Qgs2

Qgd

Qgodr

Current Sampling Resistors

Fig 26a. Gate Charge Test Circuit

Fig 26b. Gate Charge Waveform

April 30, 2013

8

AUIRFS8407-7P

D²Pak - 7 Pin Package Outline

Dimensions are shown in millimeters (inches)

D²Pak - 7 Pin Part Marking Information

PartNumber

AUFS8407-7P

Date Code

Y= Year

WW= Work Week

IR Logo

YWWA

A=Automotive,LeadFree

XX or XX

Lot Code

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

9

April 30, 2013

AUIRFS8407-7P

D²Pak - 7 Pin Tape and Reel

April 30, 2013

10

AUIRFS8407-7P

Qualification Information^†

Automotive

(per AEC-Q101)

Qualification Level

Comments: This part number(s) passed Automotive qualification. IR’s

Industrial and Consumer qualification level is granted by extension of the

higher Automotive level.

D²PAK 7 Pin

MSL1

Class M3 (+/- 400V)^††

Machine Model

AEC-Q101-002

Class H2 (+/- 4000V)^††

AEC-Q101-001

Human Body Model

ESD

Class C5 (+/- 2000V)^††

AEC-Q101-005

Charged Device Model

Yes

RoHS Compliant

†

Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/

†† Highest passing voltage.

11

April 30, 2013

AUIRFS8407-7P

IMPORTANTNOTICE

Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve

the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services

at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow

automotive industry and / or customer specific requirements with regards to product discontinuance and process change

notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.

IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s

standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this

warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily

performed.

IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products

and applications using IR components. To minimize the risks with customer products and applications, customers should

provideadequatedesignandoperatingsafeguards.

Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is

accompaniedbyallassociatedwarranties,conditions,limitations,andnotices. Reproductionofthisinformationwithalterations

is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of

third parties may be subject to additional restrictions.

ResaleofIRproductsorservicedwithstatementsdifferentfromorbeyondtheparametersstatedbyIRforthatproductorservice

voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business

practice. IR is not responsible or liable for any such statements.

IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the

body, orinotherapplicationsintendedtosupportorsustainlife, orinanyotherapplicationinwhichthefailureoftheIR product

could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such

unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees,

subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney

feesarisingoutof, directlyorindirectly, anyclaimofpersonalinjuryordeathassociatedwithsuchunintendedorunauthorized

use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product.

OnlyproductscertifiedasmilitarygradebytheDefenseLogisticsAgency(DLA)oftheUSDepartmentofDefense,aredesigned

and manufactured to meet DLA military specifications required by certain military, aerospace or other applications. Buyers

acknowledgeandagreethatanyuseofIRproductsnotcertifiedbyDLAasmilitary-grade,inapplicationsrequiringmilitarygrade

products, is solely at the Buyer’s own risk and that they are solely responsible for compliance with all legal and regulatory

requirements in connection with such use.

IRproductsareneitherdesignednorintendedforuseinautomotiveapplicationsorenvironmentsunlessthespecificIRproducts

are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”.

Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be

responsible for any failure to meet such requirements.

For technical support, please contact IR’s Technical Assistance Center

http://www.irf.com/technical-info/

WORLDHEADQUARTERS:

101 N. Sepulveda Blvd., El Segundo, California 90245

Tel:(310)252-7105

April 30, 2013

12


型号：	AUIRFS8407-7P
厂家：	Infineon
描述：	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
文件：	总12页 (文件大小：220K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

AUIRFS8407-7P [INFINEON]

相关型号：

AUIRFS8407-7TRL

AUIRFS8407-7TRR

AUIRFS8407TRL

AUIRFS8408

AUIRFS8408-7P

AUIRFS8408-7TRL

AUIRFS8408TRL

AUIRFS8408TRR

AUIRFS8409

AUIRFS8409-7P

AUIRFS8409-7TRL

AUIRFS8409-7TRR