AUIRLL2705TR [INFINEON]
Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;型号: | AUIRLL2705TR |
厂家: | Infineon |
描述: | Small Signal Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
文件: | 总12页 (文件大小:260K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
AUTOMOTIVE GRADE
AUIRLL2705
HEXFET® Power MOSFET
Features
l AdvancedPlanarTechnology
l LowOn-Resistance
l Logic Level Gate Drive
l Dynamicdv/dtRating
l 150°C Operating Temperature
l Fast Switching
D
V(BR)DSS
RDS(on) max.
ID
55V
0.04Ω
3.8A
G
S
l Fully Avalanche Rated
l Repetitive Avalanche Allowed up to
Tjmax
D
l Lead-Free, RoHS Compliant
l Automotive Qualified*
S
Description
D
G
Specifically designed for Automotive applications, this
cellular design of HEXFET® Power MOSFETs utilizes
the latest processing techniques to achieve low on-
resistance per silicon area. This benefit combined
with the fast switching speed and ruggedized device
design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely efficient
and reliable device for use in Automotive and a wide
variety of other applications.
SOT-223
AUIRLL2705
G
D
S
Gate
Drain
Source
Standard Pack
Form
Base Part Number
Package Type
Orderable Part Number
Quantity
95
2500
Tube
Tape and Reel
AUIRLL2705
AUIRLL2705TR
AUIRLL2705
SOT-223
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the
specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Max.
5.2
3.8
3.0
30
Units
I
I
I
I
@ TA = 25°C
@ TA = 25°C
@ TA = 70°C
D
D
D
A
DM
2.1
P
P
@TA = 25°C Power Dissipation (PCB Mount)
D
D
W
1.0
8.3
Power Dissipation (PCB Mount)
Linear Derating Factor (PCB Mount)
Gate-to-Source Voltage
@TA = 25°C
mW/°C
V
± 16
V
GS
EAS
IAR
110
3.8
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
mJ
A
EAR
dv/dt
0.10
7.5
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
mJ
V/ns
-55 to + 150
T
T
J
°C
Storage Temperature Range
STG
Thermal Resistance
Parameter
Typ.
93
Max.
120
60
Units
RθJA
RθJA
Junction-to-Ambient (PCB mount, steady state)
Junction-to-Ambient (PCB mount, steady state)
°C/W
48
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
1
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AUIRLL2705
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
55 ––– –––
––– 0.061 –––
Conditions
VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 1mA
V(BR)DSS
V
ΔV(BR)DSS/ΔTJ
Breakdown Voltage Temp. Coefficient
–––
–––
–––
1.0
––– 0.040
––– 0.051
––– 0.065
V
GS = 10V, ID = 3.8A
GS = 5.0V, ID = 3.8A
RDS(on)
VGS(th)
Ω
Static Drain-to-Source On-Resistance
V
VGS = 4.0V, ID = 1.9A
VDS = VGS, ID = 250μA
VDS = 25V, ID = 1.9A
Gate Threshold Voltage
–––
–––
–––
–––
–––
–––
2.0
–––
25
V
S
gfs
IDSS
Forward Transconductance
Drain-to-Source Leakage Current
5.1
–––
–––
–––
–––
μA
V
V
V
V
DS = 55V, VGS = 0V
DS = 44V, VGS = 0V, TJ = 150°C
GS = 16V
250
100
-100
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
GS = -16V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Total Gate Charge
Min. Typ. Max. Units
Conditions
Qg
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
32
3.5
9.7
6.2
12
48
ID = 3.8A
DS = 44V
VGS = 10V, See Fig. 6 and 9
DD = 28V
ID = 3.8A
Qgs
Qgd
td(on)
tr
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
5.3
nC
ns
V
14
–––
–––
–––
–––
–––
–––
–––
V
td(off)
tf
Ω
RG = 6.2
Turn-Off Delay Time
Fall Time
35
22
RD = 7.1Ω, See Fig. 10
Ciss
Coss
Crss
Input Capacitance
870
220
92
VGS = 0V
Output Capacitance
Reverse Transfer Capacitance
pF
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I
I
Continuous Source Current
–––
–––
0.91
MOSFET symbol
S
(Body Diode)
Pulsed Source Current
A
showing the
integral reverse
–––
–––
30
SM
(Body Diode)
p-n junction diode.
V
t
Diode Forward Voltage
–––
–––
–––
–––
58
1.3
88
V
T = 25°C, I = 3.8A, V = 0V
SD
J
S
GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns
nC
T = 25°C, I = 3.8A
J F
di/dt = 100A/μs
rr
Q
t
140
210
rr
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11)
VDD = 25V, starting TJ = 25°C, L = 15mH
RG = 25Ω, IAS = 3.8A. (See Figure 12)
ISD ≤ 3.8A, di/dt ≤ 220A/µs, VDD ≤ V(BR)DSS
TJ ≤ 150°C .
Pulse width ≤ 300µs; duty cycle ≤ 2%.
ꢀ When mounted on FR-4 board using minimum recommended
footprint.
When mounted on 1 inch square copper board, for comparison
with other SMD devices.
,
2
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AUIRLL2705
100
10
1
100
10
1
VGS
15V
VGS
15V
TOP
TOP
10V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
BOTTOM 3.0V
3.0V
3.0V
20μs PULSE WIDTH
T
J
20μs PULSE WIDTH
= 25°C
T
J
= 150°C
A
100
A
100
0.1
1
10
0.1
1
10
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
2.0
100
I
= 3.8A
D
1.5
1.0
0.5
0.0
T = 25°C
J
T = 150°C
J
10
VDS = 25V
20μs PULSE WIDTH
V
= 10V
GS
1
A
5.0A
3.0
3.5
4.0
4.5
-60 -40 -20
0
20 40 60 80 100 120 140 160
T , Junction Temperature (°C)
VGS , Gate-to-Source Voltage (V)
J
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
3
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AUIRLL2705
1400
1200
1000
800
600
400
200
0
20
16
12
8
V
C
C
C
= 0V,
f = 1MHz
I
= 3.8A
D
GS
iss
rss
oss
= C + C
,
C
SHORTED
gs
gd
ds
V
V
= 44V
= 28V
DS
DS
= C
gd
= C + C
C
iss
ds
gd
C
oss
C
rss
4
FOR TEST CIRCUIT
SEE FIGURE 9
0
A
A
1
10
100
0
10
20
30
40
50
V
, Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10μs
T = 150°C
J
100μs
1ms
T = 25°C
J
10ms
T
T
= 25°C
= 150°C
Single Pulse
A
J
V
= 0V
GS
A
0.1
A
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
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AUIRLL2705
RD
VDS
Q
G
VGS
10V
D.U.T.
Q
Q
GD
GS
RG
+ VDD
-
V
G
10V
Charge
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
Fig 9a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
V
DS
90%
50KΩ
.2μF
12V
.3μF
+
V
DS
D.U.T.
-
10%
V
GS
V
GS
t
t
r
t
t
f
3mA
d(on)
d(off)
I
I
D
G
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
Fig 10b. Switching Time Waveforms
1000
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
1
DM
t
1
t
SINGLE PULSE
(THERMAL RESPONSE)
2
0.1
Notes:
1. Duty factor D = t / t
1
2
2. Peak T = P
J
x Z
+ T
thJA
DM
A
A
0.01
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
10000
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
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AUIRLL2705
250
200
150
100
50
I
D
TOP
1.7A
3.0A
BOTTOM 3.8A
15V
DRIVER
+
L
V
DS
D.U.T
R
G
V
DD
-
I
A
AS
20V
Ω
0.01
t
p
V
= 25V
50
Fig 12a. Unclamped Inductive Test Circuit
DD
0
A
150
25
75
100
125
Starting T , Junction Temperature (°C)
J
V
(BR)DSS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
6
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AUIRLL2705
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
-
+
-
+
-
+
-
VDD
RG
• dv/dt controlled by RG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
*
Driver Gate Drive
P.W.
Period
Period
D =
P.W.
V
=10V
GS
D.U.T. I Waveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 13. For N-Channel HEXFETS
7
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AUIRLL2705
SOT-223 (TO-261AA) Package Outline
Dimensions are shown in milimeters (inches)
SOT-223 (TO-261AA) Part Marking Information
LL2705
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRLL2705
SOT-223 (TO-261AA) Tape & Reel Information
Dimensions are shown in milimeters (inches)
4.10 (.161)
3.90 (.154)
0.35 (.013)
0.25 (.010)
1.85 (.072)
1.65 (.065)
2.05 (.080)
1.95 (.077)
TR
7.55 (.297)
7.45 (.294)
16.30 (.641)
15.70 (.619)
7.60 (.299)
7.40 (.292)
1.60 (.062)
1.50 (.059)
TYP.
FEED DIRECTION
2.30 (.090)
2.10 (.083)
7.10 (.279)
6.90 (.272)
12.10 (.475)
11.90 (.469)
NOTES :
1. CONTROLLING DIMENSION: MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
3. EACH O330.00 (13.00) REEL CONTAINS 2,500 DEVICES.
13.20 (.519)
12.80 (.504)
15.40 (.607)
11.90 (.469)
4
330.00
(13.000)
MAX.
50.00 (1.969)
MIN.
18.40 (.724)
MAX.
NOTES :
1. OUTLINE COMFORMS TO EIA-418-1.
2. CONTROLLING DIMENSION: MILLIMETER..
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
14.40 (.566)
12.40 (.488)
4
3
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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AUIRLL2705
Qualification Information†
Automotive
††
(per AEC-Q101)
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive
level.
Qualification Level
SOT-223
MSL1
Class M2 (+/- 200V)†††
AEC-Q101-002
Moisture Sensitivity Level
Machine Model
Class H1B (+/- 750V)†††
AEC-Q101-001
Human Body Model
ESD
Class C5 (+/- 1125V)†††
AEC-Q101-005
Yes
Charged Device Model
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
10
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AUIRLL2705
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsid-
iaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other
changes to its products and services at any time and to discontinue any product or services without notice.
Part numbers designated with the AU prefix follow automotive industry and / or customer specific
requirements with regards to product discontinuance and process change notification. All products are sold
subject to IRs terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in
accordance with IRs standard warranty. Testing and other quality control techniques are used to the extent
IR deems necessary to support this warranty. Except where mandated by government requirements, testing
of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible
for their products and applications using IR components. To minimize the risks with customer products and
applications, customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without
alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction
of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable
for such altered documentation. Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for
that product or service voids all express and any implied warranties for the associated IR product or service
and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical
implant into the body, or in other applications intended to support or sustain life, or in any other application
in which the failure of the IR product could create a situation where personal injury or death may occur. Should
Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify
and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless
against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even
if such claim alleges that IR was negligent regarding the design or manufacture of the product.
Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of
Defense, are designed and manufactured to meet DLA military specifications required by certain military,
aerospace or other applications. Buyers acknowledge and agree that any use of IR products not certified by
DLA as military-grade, in applications requiring military grade products, is solely at the Buyers own risk and
that they are solely responsible for compliance with all legal and regulatory requirements in connection with
such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the
specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part
number including the designation AU. Buyers acknowledge and agree that, if they use any non-designated
products in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IRs Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
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AUIRLL2705
Revision History
Date
Comments
•
•
•
Added "Logic Level Gate Drive" bullet in the features section on page 1
Updated part marking on page 8
Updated data sheet with new IR corporate template
3/26/2014
12
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