AUIRLR024N [INFINEON]

Advanced Planar Technology Low On-Resistance Fully Avalanche Rated; 高级平面技术低导通电阻全额定雪崩


型号：	AUIRLR024N
厂家：	Infineon
描述：	Advanced Planar Technology Low On-Resistance Fully Avalanche Rated 高级平面技术低导通电阻全额定雪崩
文件：	总13页 (文件大小：328K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

PD-96348

AUTOMOTIVE GRADE

AUIRLR024N

AUIRLU024N

Features

HEXFET^®Power MOSFET

Advanced Planar Technology

Low On-Resistance

Logic-Level Gate Drive

Dynamic dV/dT Rating

175°C Operating Temperature

Fast Switching

V_(BR)DSS

55V

R_DS(on)max.

I_D

0.065

17A

Ω

Fully Avalanche Rated

Repetitive Avalanche Allowed up to Tjmax

Lead-Free, RoHS Compliant

Automotive Qualified *

Description

Specifically designed for Automotive applications, this

Cellular design of HEXFET® Power MOSFETs utilizes

the latest processing techniques to achieve low on-

resistance per silicon area. This benefit combined with

the fast switching speed and ruggedized device design

that HEXFET power MOSFETs are well known for,

provides the designer with an extremely efficient and

reliabledeviceforuseinAutomotiveandawidevarietyof

other applications.

I-Pak

D-Pak

AUIRLR024N

AUIRLU024N

Gate

Drain

Source

Absolute Maximum Ratings

Stressesbeyondthoselistedunder“AbsoluteMaximumRatings”maycausepermanentdamagetothedevice.These

are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated

in the specifications is not implied.Exposure to absolute-maximum-rated conditions for extended periods may affect

device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still

air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.

Parameter

Continuous Drain Current, V_GS@ 10V

Pulsed Drain Current

Max.

Units

@ T = 25°C

@ T = 100°C

Power Dissipation

W/°C

@T = 25°C

0.3

Linear Derating Factor

± 16

Gate-to-Source Voltage

E_AS

I_AR

Single Pulse Avalanche Energy

Avalanche Current

4.5

E_AR

dv/dt

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Operating Junction and

5.0

V/ns

-55 to + 175

Storage Temperature Range

Soldering Temperature, for 10 seconds

°C

STG

300 (1.6mm from case )

Thermal Resistance

Parameter

Typ.

Max.

3.3

Units

R_θJC

R_θJA

Junction-to-Case

–––

Junction-to-Ambient (PCB mount)

Junction-to-Ambient

°C/W

110

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

www.irf.com

01/18/11

AUIRLR/U024N

Static Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Drain-to-Source Breakdown Voltage

Min. Typ. Max. Units

Conditions

V_GS= 0V, I_D= 250µA

V_(BR)DSS

–––

0.061

–––

∆ ∆

V_(BR)DSS/ T_J

Breakdown Voltage Temp. Coefficient

–––

1.0

–––

V/°C Reference to 25°C, I_D= 1mA

V_GS= 10V, I_D= 10A

0.065

0.080

0.110

2.0

R_DS(on)

V_GS(th)

V_GS= 5.0V, I_D= 10A

Static Drain-to-Source On-Resistance

Ω

V_GS= 4.0V, I_D= 9.0A

Gate Threshold Voltage

V_DS= V_GS, I_D= 250µA

V_DS= 25V, I_D= 11A

gfs

Forward Transconductance

Drain-to-Source Leakage Current

8.3

–––

I_DSS

–––

µA

_DS= 55V, V_GS= 0V

250

_DS= 44V, V_GS= 0V, T_J= 150°C

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

100

nA V_GS= 16V

_GS= -16V

-100

Dynamic Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Q_g

Q_gs

Q_gd

t_d(on)

t_r

Total Gate Charge

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

–––

7.1

I_D= 11A

3.7

V_DS= 44V

8.5

V_GS= 5.0V,See Fig 6 and 13

V_DD= 28V

–––

I_D= 11A

t_d(off)

t_f

Ω,

V_GS= 5.0V

Turn-Off Delay Time

Fall Time

R_G= 12

Ω,

R_D= 2.4 See Fig.10

L_D

Internal Drain Inductance

Between lead,

–––

4.5

7.5

–––

nH 6mm (0.25in.)

from package

L_S

Internal Source Inductance

and center of die contact

V_GS= 0V

_DS= 25V

ƒ = 1.0MHz, See Fig.5

C_iss

C_oss

C_rss

Input Capacitance

–––

480

130

–––

Output Capacitance

Reverse Transfer Capacitance

Diode Characteristics

Parameter

Min. Typ. Max. Units

Conditions

Continuous Source Current

MOSFET symbol

–––

(Body Diode)

Pulsed Source Current

showing the

integral reverse

–––

(Body Diode)

p-n junction diode.

Diode Forward Voltage

–––

1.3

T = 25°C, I = 11A, V = 0V

J S GS

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn-On Time

T = 25°C, I = 11A

J F

di/dt = 100A/µs

130

200

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

Repetitive rating; pulse width limited by max. junction temperature. (See fig. 11)

V_DD= 25V, starting T_J= 25°C, L = 790µH, R_G= 25Ω, I_AS= 11A. (See Figure 12)

I_SD≤ 11A, di/dt ≤ 290A/µs, V_DD≤ V_(BR)DSS, T_J≤ 175°C

Pulse width ≤ 300µs; duty cycle ≤ 2%

ꢀ This is applied for I-PAK, L_Sof D-PAK is measured between lead and center of die contact .

Uses IRLZ24N data and test conditions.

** When mounted on 1" square PCB (FR-4 or G-10 Material ) .

For recommended footprint and soldering techniques refer to application note #AN-994

www.irf.com

AUIRLR/U024N

Qualification Information^†

Automotive

††

(per AEC-Q101)

Qualification Level

Comments: This part number(s) passed Automotive

qualification. IR’s Industrial and Consumer qualification

level is granted by extension of the higher Automotive level.

MSL1

N/A

D PAK

I-PAK

Moisture Sensitivity Level

Class M2(+/-150V )^†††

Machine Model

AEC-Q101-002

Class H1A(+/-500V )^†††

AEC-Q101-001

Human Body Model

ESD

Class C5(+/-2000V )^†††

AEC-Q101-005

Charged Device

Model

Yes

RoHS Compliant

Qualification standards can be found at International Rectifiers web site: http//www.irf.com/

Exceptions to AEC-Q101 requirements are noted in the qualification report.

Highest passing voltage

www.irf.com

AUIRLR/U024N

100

VGS

15V

TOP

15V

TOP

12V

10V

8.0V

6.0V

4.0V

3.0V

12V

10V

8.0V

6.0V

4.0V

3.0V

BOTTOM 2.5V

2.5V

20µs PULSE WIDTH

= 25°C

= 175°C

0.1

100

, Drain-to-Source Voltage (V)

Fig 2. Typical Output Characteristics

Fig 1. Typical Output Characteristics

3.0

2.5

2.0

1.5

1.0

0.5

0.0

100

= 18A

17 A

T_J= 25°C

T_J= 175°C

V _DS= 15V

20µs PULSE WIDTH

₁₀A

= 10V

0.1

-60 -40 -20

20 40 60 80 100 120 140 160 180

T , Junction Temperature (°C)

V_GS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics

Fig 4. Normalized On-Resistance

Vs. Temperature

www.irf.com

AUIRLR/U024N

800

600

400

200

= 0V,

f = 1MHz

= 11A

iss

rss

oss

= C + C

SHORTED

= 44V

= 28V

= C

= C + C

iss

oss

rss

FOR TEST CIRCUIT

SEE FIGURE 13

100

, Drain-to-Source Voltage (V)

, Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Fig 5. Typical Capacitance Vs.

Gate-to-Source Voltage

Drain-to-Source Voltage

100

1000

100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

T = 175°C

T = 25°C

10µs

100µs

= 25°C

= 175°C

Single Pulse

1ms

10ms

= 0V

100

0.4

0.8

1.2

1.6

2.0

, Drain-to-Source Voltage (V)

, Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

www.irf.com

AUIRLR/U024N

R_D

V_DS

V_GS

D.U.T.

R_G

⁺V_DD

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

100

125

150

175

T , Case Temperature ( C)

90%

Fig 9. Maximum Drain Current Vs.

10%

Case Temperature

d(on)

d(off)

Fig 10b. Switching Time Waveforms

D = 0.50

0.20

0.10

0.05

0.02

0.01

0.1

SINGLE PULSE

(THERMAL RESPONSE)

Notes:

1. Duty factor D = t / t

2. Peak T = P

x Z

+ T

thJC

0.01

0.00001

0.0001

0.001

0.01

0.1

t₁, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

www.irf.com

AUIRLR/U024N

140

120

100

TOP

4.5A

7.8A

BOTTOM 11A

15V

DRIVER

D.U.T

20V

0.01Ω

= 25V

Fig 12a. Unclamped Inductive Test Circuit

175

100

125

150

Starting T , Junction Temperature (°C)

(BR)DSS

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

Current Regulator

Fig 12b. Unclamped Inductive Waveforms

Same Type as D.U.T.

50KΩ

.2µF

12V

.3µF

D.U.T.

10 V

3mA

Current Sampling Resistors

Charge

Fig 13b. Gate Charge Test Circuit

Fig 13a. Basic Gate Charge Waveform

www.irf.com

AUIRLR/U024N

Peak Diode Recovery dv/dt Test Circuit

D.U.T

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

• dv/dt controlled by R_G

• Driver same type as D.U.T.

R_G

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

V_DD

Driver Gate Drive

P.W.

D =

Period

P.W.

=10V

D.U.T. I Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

Diode Recovery

dv/dt

Re-Applied

Voltage

Body Diode

Forward Drop

Inductor Curent

Ripple ≤ 5%

* V_GS= 5V for Logic Level Devices

Fig 14. For N-Channel HEXFET^®MOSFETs

www.irf.com

AUIRLR/U024N

D-Pak (TO-252AA) Package Outline

Dimensions are shown in millimeters (inches)

D-Pak (TO-252AA) Part Marking Information

Part Number

AURLR024N

Date Code

Y= Year

WW= Work Week

A= Automotive, Lead Free

IR Logo

YWWA

XX or XX

Lot Code

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

www.irf.com

AUIRLR/U024N

I-Pak (TO-251AA) Package Outline ( Dimensions are shown in millimeters (inches)

I-Pak (TO-251AA) Part Marking Information

Part Number

AURLU024N

Date Code

Y= Year

WW= Work Week

A= Automotive, Lead Free

IR Logo

YWWA

XX or XX

Lot Code

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

www.irf.com

AUIRLR/U024N

D-Pak (TO-252AA) Tape & Reel Information

Dimensions are shown in millimeters (inches)

TRL

TRR

16.3 ( .641 )

15.7 ( .619 )

16.3 ( .641 )

15.7 ( .619 )

12.1 ( .476 )

11.9 ( .469 )

8.1 ( .318 )

7.9 ( .312 )

FEED DIRECTION

NOTES :

1. CONTROLLING DIMENSION : MILLIMETER.

2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).

3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

13 INCH

16 mm

NOTES :

1. OUTLINE CONFORMS TO EIA-481.

www.irf.com

AUIRLR/U024N

Ordering Information

Base part

Package Type

Standard Pack

Complete Part Number

Form

Quantity

AUIRLR024N

DPak

Tube

Tape and Reel

Tape and Reel Left

Tape and Reel Right

Tube

AUIRLR024N

AUIRLR024NTR

AUIRLR024NTRL

AUIRLR024NTRR

AUIRLU024N

2000

3000

AUIRLU024N

IPak

www.irf.com

AUIRLR/U024N

IMPORTANT NOTICE

Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR)

reservetherighttomakecorrections,modifications,enhancements,improvements,andotherchangestoitsproductsand

servicesatanytimeandtodiscontinueanyproductorserviceswithoutnotice.Partnumbersdesignatedwiththe“AU”prefix

follow automotive industry and / or customer specific requirements with regards to product discontinuance and process

change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order

acknowledgment.

IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with

IR’sstandardwarranty. TestingandotherqualitycontroltechniquesareusedtotheextentIRdeemsnecessarytosupport

this warranty. Except where mandated by government requirements, testing of all parameters of each product is not

necessarily performed.

IR assumes no liability for applications assistance or customer product design. Customers are responsible for their

productsandapplicationsusingIRcomponents.Tominimizetheriskswithcustomerproductsandapplications,customers

should provide adequate design and operating safeguards.

Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and

is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with

alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation.

Information of third parties may be subject to additional restrictions.

Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product

or service voids all express and any implied warranties for the associated IR product or service and is an unfair and

deceptive business practice. IR is not responsible or liable for any such statements.

IRproductsarenotdesigned, intended, orauthorizedforuseascomponentsinsystemsintendedforsurgicalimplantinto

the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the

IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products

foranysuchunintendedorunauthorizedapplication,BuyershallindemnifyandholdInternationalRectifieranditsofficers,

employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and

reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such

unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of

the product.

IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR

products are specifically designated by IR as military-grade or “enhanced plastic.” Only products designated by IR as

military-grademeetmilitaryspecifications. BuyersacknowledgeandagreethatanysuchuseofIRproductswhichIRhas

not designated as military-grade is solely at the Buyer’s risk, and that they are solely responsible for compliance with all

legal and regulatory requirements in connection with such use.

IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR

products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the

designation “AU”. Buyers acknowledge and agree that, if they use any non-designated products in automotive

applications, IR will not be responsible for any failure to meet such requirements

For technical support, please contact IR’s Technical Assistance Center

http://www.irf.com/technical-info/

WORLD HEADQUARTERS:

233 Kansas St., El Segundo, California 90245

Tel: (310) 252-7105

www.irf.com

AUIRLR024N [INFINEON]

相关型号：

SI9130DB

SI9135LG-T1

SI9135LG-T1-E3

SI9135_11

SI9136_11

SI9130CG-T1-E3

SI9130LG-T1-E3

SI9130_11

SI9137

SI9137DB

SI9137LG

SI9122E