AUIRLR3114ZTRL [INFINEON]
Advanced Process Technology; 先进的工艺技术
| 型号： | AUIRLR3114ZTRL |
| 厂家： | 
Infineon |
| 描述： | Advanced Process Technology |
| 文件： | 总14页 (文件大小：225K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 96381
AUTOMOTIVE GRADE
AUIRLR3114Z
AUIRLU3114Z
HEXFET® Power MOSFET
Features
Advanced Process Technology
D
VDSS
40V
UltraLowOn-Resistance
175°COperatingTemperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Logic Level
RDS(on) max @ 10V
max @ 4.5V
4.9m
6.5m
130A
Ω
Ω
G
ID (Silicon Limited)
S
l
l
Lead-Free,RoHSCompliant
Automotive Qualified *
ID (Package Limited)
42A
Description
D
Specifically designed for Automotive applications, this
HEXFET® Power MOSFET utilizes the latest processing
techniques to achieve extremely low on-resistance per
silicon area. Additional features of this design are a 175°C
junction operating temperature, fast switching speed and
improvedrepetitiveavalancherating.Thesefeaturescom-
bine to make this design an extremely efficient and reliable
deviceforuseinAutomotiveapplicationsandawidevariety
of other applications.
S
S
D
G
G
I-Pak
AUIRLU3114Z
D-Pak
AUIRLR3114Z
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
StressesbeyondthoselistedunderAbsoluteMaximumRatingsmaycausepermanentdamagetothedevice.Thesearestress
ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications
is not implied.Exposuretoabsolute-maximum-ratedconditionsforextendedperiodsmayaffectdevicereliability. Thethermal
resistanceandpowerdissipationratingsaremeasuredunderboardmountedandstillairconditions.Ambienttemperature(TA)
is 25°C, unless otherwise specified.
Parameter
Max.
Units
130
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
89
A
42
500
140
Pulsed Drain Current
PD @TC = 25°C
W
Power Dissipation
Linear Derating Factor
0.95
±16
W/°C
V
VGS
Gate-to-Source Voltage
EAS (Thermally limited)
130
260
mJ
Single Pulse Avalanche Energy
Single Pulse Avalanche Energy Tested Value
Avalanche Current
E
AS (Tested )
IAR
See Fig.12a, 12b, 15, 16
A
EAR
TJ
mJ
Repetitive Avalanche Energy
Operating Junction and
-55 to + 175
TSTG
°C
Storage Temperature Range
Soldering Temperature, for 10 seconds
300(1.6mm from case)
Thermal Resistance
Parameter
Typ.
–––
–––
–––
Max.
1.05
40
Units
RθJC
Junction-to-Case
Rθ
°C/W
Junction-to-Ambient (PCB mount)
Junction-to-Ambient
JA
RθJA
110
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
06/22/11
AUIRLR/U3114Z
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
40 ––– –––
––– 0.032 –––
Conditions
VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 1mA
V(BR)DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
V
ΔV(BR)DSS/ΔTJ
RDS(on)
–––
–––
1.0
3.9
5.2
4.9
6.5
V
V
V
V
GS = 10V, ID = 42A
GS = 4.5V, ID = 42A
DS = VGS, ID = 100μA
DS = 10V, ID = 42A
mΩ
VGS(th)
gfs
Gate Threshold Voltage
–––
–––
–––
–––
–––
–––
2.5
V
S
Forward Transconductance
Drain-to-Source Leakage Current
98
–––
20
IDSS
–––
–––
–––
–––
VDS = 40V, VGS = 0V
DS = 40V, VGS = 0V, TJ = 125°C
VGS = 16V
GS = -16V
μA
250
100
-100
V
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qgs
Qgd
td(on)
tr
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
–––
–––
–––
–––
40
12
56
ID = 42A
nC VDS = 20V
–––
–––
–––
–––
–––
–––
–––
18
V
V
GS = 4.5V
DD = 20V
25
140
33
ID = 42A
ns RG = 3.7Ω
VGS = 4.5V
td(off)
tf
Turn-Off Delay Time
Fall Time
50
D
S
LD
Internal Drain Inductance
4.5
Between lead,
nH 6mm (0.25in.)
from package
G
LS
Internal Source Inductance
–––
7.5
–––
and center of die contact
Ciss
Input Capacitance
––– 3810 –––
VGS = 0V
VDS = 25V
Coss
Output Capacitance
–––
–––
650
350
–––
–––
Crss
Reverse Transfer Capacitance
Output Capacitance
pF ƒ = 1.0MHz
Coss
––– 2390 –––
V
V
GS = 0V, VDS = 1.0V, ƒ = 1.0MHz
GS = 0V, VDS = 32V, ƒ = 1.0MHz
Coss
Output Capacitance
–––
–––
580
820
–––
–––
Coss eff.
Effective Output Capacitance
VGS = 0V, VDS = 0V to 32V
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
IS
Continuous Source Current
MOSFET symbol
D
S
–––
–––
––– 42
(Body Diode)
Pulsed Source Current
A
showing the
integral reverse
G
ISM
–––
500
(Body Diode)
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
–––
–––
–––
–––
30
1.3
45
41
V
TJ = 25°C, IS = 42A, VGS = 0V
ns TJ = 25°C, IF = 42A, VDD = 20V
di/dt = 100A/μs
Qrr
ton
27
nC
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C, L = 0.15mH
ꢀ Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
RG = 25Ω, IAS = 42A, VGS =10V. Part not
recommended for use above this value.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
Coss eff. is a fixed capacitance that gives the
same charging time as Coss while VDS is rising
This value determined from sample failure population. 100%
tested to this value in production.
When mounted on 1" square PCB (FR-4 or G-10 Material).
Rθ is measured at TJ approximately 90°C.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation is 42A.
from 0 to 80% VDSS
.
2
www.irf.com
AUIRLR/U3114Z
Qualification Information†
Automotive
††
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification
level is granted by extension of the higher Automotive level.
Moisture Sensitivity Level
MSL1
N/A
3L-D PAK
3L-I-PAK
Class M4(+/- 425V )†††
Machine Model
(per AEC-Q101-002)
Class H1C(+/- 2000V )†††
(per AEC-Q101-001)
Human Body Model
ESD
Class C5(+/- 1125V )†††
(per AEC-Q101-005)
Charged Device
Model
Yes
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/
†† Exceptions to AEC-Q101 requirements are noted in the qualification report.
††† Highest passing voltage
www.irf.com
3
AUIRLR/U3114Z
1000
1000
100
10
VGS
15V
10V
8.0V
4.5V
3.5V
3.0V
2.7V
2.5V
VGS
15V
TOP
TOP
10V
8.0V
4.5V
3.5V
3.0V
2.7V
2.5V
100
10
1
BOTTOM
BOTTOM
2.5V
60μs PULSE WIDTH
Tj = 175°C
≤
2.5V
60μs PULSE WIDTH
Tj = 25°C
≤
0.1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
100
200
150
100
50
T
= 25°C
J
T
= 175°C
J
T
= 25°C
J
10
1
T
= 175°C
J
V
= 10V
DS
380μs PULSE WIDTH
V
= 15V
DS
≤
60μs PULSE WIDTH
0.1
0
1
2
3
4
5
6
7
0
20
40
60
80
100
I ,Drain-to-Source Current (A)
D
V
, Gate-to-Source Voltage (V)
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
vs. Drain Current
4
www.irf.com
AUIRLR/U3114Z
6.0
5.0
4.0
3.0
2.0
1.0
0.0
100000
10000
1000
V
= 0V,
= C
f = 1 MHZ
GS
I = 42A
D
C
C
C
+ C , C
SHORTED
iss
gs
gd
ds
= C
rss
oss
gd
V
= 32V
= 20V
= 8.0V
DS
= C + C
ds
gd
V
V
DS
DS
C
iss
C
oss
C
rss
100
0
10
20
30
40
50
1
10
, Drain-to-Source Voltage (V)
100
Q , Total Gate Charge (nC)
G
V
DS
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance vs.
Gate-to-SourceVoltage
Drain-to-SourceVoltage
1000
100
10
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
100μsec
1msec
10msec
Tc = 25°C
T
= 25°C
J
Tj = 175°C
Single Pulse
V
= 0V
GS
DC
1.0
1
0.0
0.5
1.0
1.5
2.0
2.5
3.0
1
10
, Drain-to-Source Voltage (V)
100
V
, Source-to-Drain Voltage (V)
V
SD
DS
Fig 7. Typical Source-Drain Diode
Fig 8. Maximum Safe Operating Area
Forward Voltage
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5
AUIRLR/U3114Z
2.0
1.5
1.0
0.5
140
I
= 42A
D
V
= 10V
GS
120
100
80
60
40
20
0
Limited By Package
-60 -40 -20 0 20 40 60 80 100120140160180
, Junction Temperature (°C)
25
50
75
100
125
150
175
T
J
T
, Case Temperature (°C)
C
Fig 10. Normalized On-Resistance
Fig 9. Maximum Drain Current vs.
vs.Temperature
CaseTemperature
10
1
D = 0.50
0.20
R1
R1
R2
R2
R3
R4
Ri (°C/W) τi (sec)
R3
R4
0.10
0.05
0.1
0.01
0.0350
0.2433
0.4851
0.2867
0.000013
0.000077
0.001043
0.004658
τ
τ
J τJ
τ
Cτ
1τ1
Ci= τi/Ri
τ
τ
τ
2 τ2
3τ3
4τ4
0.02
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRLR/U3114Z
600
500
400
300
200
100
0
I
D
15V
TOP
9.7A
17A
BOTTOM 42A
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
GS
Ω
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
175
V
(BR)DSS
Starting T , Junction Temperature (°C)
J
t
p
Fig 12c. Maximum Avalanche Energy
vs. Drain Current
I
AS
Fig 12b. Unclamped Inductive Waveforms
3.0
2.5
2.0
1.5
1.0
0.5
Q
Q
G
10 V
Q
GS
GD
I
I
I
I
= 150μA
= 250μA
= 1.0mA
= 1.0A
D
D
D
D
V
G
Charge
Fig 13a. Basic Gate Charge Waveform
-75 -50 -25
0
25 50 75 100 125 150175 200
T , Temperature ( °C )
J
L
VCC
Fig 14. Threshold Voltage vs. Temperature
DUT
0
1K
Fig 13b. Gate Charge Test Circuit
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7
AUIRLR/U3114Z
1000
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Δ Tj = 150°C and
Tstart =25°C (Single Pulse)
100
0.01
0.05
10
1
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
150
100
50
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long as
neither Tjmax nor Iav (max) is exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. PD (ave) = Average power dissipation per single
avalanche pulse.
TOP
BOTTOM 1.0% Duty Cycle
= 42A
Single Pulse
I
D
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed
T
jmax (assumed as 25°C in Figure 15, 16).
0
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
25
50
75
100
125
150
175
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
vs.Temperature
8
www.irf.com
AUIRLR/U3114Z
Driver Gate Drive
P.W.
P.W.
D =
D.U.T
Period
Period
+
*
=10V
V
GS
CircuitLayoutConsiderations
• LowStrayInductance
• Ground Plane
• LowLeakageInductance
Current Transformer
-
D.U.T. I Waveform
SD
+
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
-
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
• dv/dtcontrolledbyRG
• Driver same type as D.U.T.
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
Re-Applied
Voltage
RG
+
-
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple ≤ 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
PulseWidth ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
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9
AUIRLR/U3114Z
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
PartNumber
AULR3114Z
DateCode
Y= Year
WW= Work Week
A= Automotive, Lead Free
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
www.irf.com
AUIRLR/U3114Z
I-Pak (TO-251AA) Package Outline ( Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
PartNumber
AULU3114Z
DateCode
Y= Year
WW= Work Week
A= Automotive, Lead Free
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
www.irf.com
11
AUIRLR/U3114Z
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
12
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AUIRLR/U3114Z
Ordering Information
Base part
Package Type
Standard Pack
Complete Part Number
Form
Quantity
AUIRLR3114Z
DPak
IPak
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Tube
75
AUIRLR3114Z
AUIRLR3114ZTR
AUIRLR3114ZTRL
AUIRLR3114ZTRR
AUIRLU3114Z
2000
3000
3000
75
AUIRLU3114Z
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13
AUIRLR/U3114Z
IMPORTANTNOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve
the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services
at any time and to discontinue any product or services without notice. Part numbers designated with the “AU” prefix follow
automotive industry and / or customer specific requirements with regards to product discontinuance and process change
notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s
standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this
warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily
performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products
and applications using IR components. To minimize the risks with customer products and applications, customers should
provideadequatedesignandoperatingsafeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is
accompaniedbyallassociatedwarranties,conditions,limitations,andnotices. Reproductionofthisinformationwithalterations
isanunfairanddeceptivebusinesspractice. IRisnotresponsibleorliableforsuchaltereddocumentation. Informationofthird
parties may be subject to additional restrictions.
ResaleofIRproductsorservicedwithstatementsdifferentfromorbeyondtheparametersstatedbyIRforthatproductorservice
voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business
practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the
body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product
could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such
unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney
fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized
use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product.
OnlyproductscertifiedasmilitarygradebytheDefenseLogisticsAgency(DLA)oftheUSDepartmentofDefense,aredesigned
and manufactured to meet DLA military specifications required by certain military, aerospace or other applications. Buyers
acknowledgeandagreethatanyuseofIRproductsnotcertifiedbyDLAasmilitary-grade,inapplicationsrequiringmilitarygrade
products, is solely at the Buyer’s own risk and that they are solely responsible for compliance with all legal and regulatory
requirements in connection with such use.
IRproductsareneitherdesignednorintendedforuseinautomotiveapplicationsorenvironmentsunlessthespecificIRproducts
are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”.
Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be
responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLDHEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel:(310)252-7105
14
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Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
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