AUIRLR3915TRR [INFINEON]
AUIRLR3915 HEXFET® Power MOSFET; AUIRLR3915 HEXFET®功率MOSFET型号: | AUIRLR3915TRR |
厂家: | Infineon |
描述: | AUIRLR3915 HEXFET® Power MOSFET |
文件: | 总13页 (文件大小:234K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PD - 97743
AUTOMOTIVEGRADE
AUIRLR3915
Features
HEXFET® Power MOSFET
l AdvancedPlanarTechnology
l Logic-LevelGateDrive
l LowOn-Resistance
l 175°COperatingTemperature
l Fast Switching
l FullyAvalancheRated
l RepetitiveAvalancheAllowed
up to Tjmax
D
V(BR)DSS
55V
RDS(on) typ.
max
12m
14m
G
ID (Silicon Limited)
61A
30A
S
ID (Package Limited)
l Lead-Free,RoHSCompliant
l AutomotiveQualified*
D
Description
Specifically designed for Automotive applications,
this Stripe Planar design of HEXFET® Power
MOSFETs utilizes the latest processing techniques
to achieve low on-resistance per silicon area. This
benefit combined with the fast switching speed and
ruggedized device design that HEXFET power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in Automotive and a wide variety of other applications.
S
G
D-Pak
AUIRLR3915
G
Gate
D
S
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These
are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in
the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device
reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions.
Ambient temperature (TA) is 25°C, unless otherwise specified.
Max.
61
Parameter
Units
Continuous Drain Current, VGS @ 10V (Silicon Limited)
@ T = 25°C
C
I
I
I
I
D
D
D
43
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
A
@ T = 100°C
C
30
@ T = 25°C
C
240
DM
120
0.77
± 16
P
@T = 25°C Power Dissipation
W
W/°C
V
D
C
Linear Derating Factor
Gate-to-Source Voltage
V
GS
EAS
AS (tested )
200
600
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
mJ
E
IAR
See Fig. 12a, 12b, 15, 16
A
EAR
Repetitive Avalanche Energy
mJ
-55 to + 175
300
Operating Junction and
T
T
J
Storage Temperature Range
°C
STG
Soldering Temperature, for 10 seconds (1.6mm from case )
Thermal Resistance
Parameter
Typ.
–––
–––
–––
Max.
1.3
Units
RJC
RJA
RJA
Junction-to-Case
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
50
°C/W
110
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
11/29/11
AUIRLR3915
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
55 ––– –––
Conditions
VGS = 0V, ID = 250μA
V(BR)DSS
V
V(BR)DSS/ TJ
Breakdown Voltage Temp. Coefficient ––– 0.057 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on)
Static Drain-to-Source On-Resistance
–––
–––
1.0
12
14
17
VGS = 10V, ID = 30A
VGS = 5.0V, ID = 26A
VDS = VGS, ID = 250μA
VDS = 25V, ID = 30A
m
14
VGS(th)
Gate Threshold Voltage
–––
–––
–––
–––
–––
3.0
–––
20
V
S
gfs
IDSS
Forward Transconductance
Drain-to-Source Leakage Current
42
–––
–––
–––
–––
μA VDS = 55V, VGS = 0V
VDS = 55V, VGS = 0V, TJ = 125°C
nA VGS = 16V
250
200
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– -200
VGS = -16V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
Total Gate Charge
Qg
Qgs
Qgd
td(on)
tr
–––
–––
–––
–––
–––
–––
–––
–––
61
9.0
17
92
14
ID = 30A
nC VDS = 44V
VGS = 10V
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
25
7.4
51
–––
–––
–––
–––
–––
VDD = 28V
ID = 30A
td(off)
tf
Turn-Off Delay Time
Fall Time
83
ns RG = 8.5
100
4.5
VGS = 10V
D
S
LD
Internal Drain Inductance
Between lead,
nH 6mm (0.25in.)
from package
G
LS
Internal Source Inductance
–––
7.5
–––
and center of die contact
VGS = 0V
DS = 25V
ƒ = 1.0MHz, See Fig. 5
Ciss
Input Capacitance
––– 1870 –––
Coss
Output Capacitance
–––
–––
390
74
–––
–––
pF
V
Crss
Reverse Transfer Capacitance
Output Capacitance
Coss
––– 2380 –––
V
V
V
GS = 0V, VDS = 1.0V, ƒ = 1.0MHz
GS = 0V, VDS = 44V, ƒ = 1.0MHz
GS = 0V, VDS = 0V to 44V
Coss
Output Capacitance
Effective Output Capacitance
–––
–––
290
540
–––
–––
Coss eff.
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
I
I
Continuous Source Current
–––
–––
MOSFET symbol
61
S
(Body Diode)
Pulsed Source Current
A
showing the
integral reverse
G
–––
–––
240
SM
S
(Body Diode)
p-n junction diode.
V
t
Diode Forward Voltage
–––
–––
–––
–––
62
1.3
93
V
T = 25°C, I = 30A, V = 0V
SD
J S GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T = 25°C, I = 30A, VDD = 25V
J F
rr
di/dt = 100A/μs
Q
t
110
170
nC
rr
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by TJmax, starting TJ = 25°C,
L = 0.45mH, RG = 25, IAS = 30A, VGS =10V.
Part not recommended for use above this
ꢀ Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
.
Limited by TJmax , see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population, starting
TJ = 25°C, L = 0.45mH, RG = 25, IAS = 30A, VGS =10V.
When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to
application note #AN-994.
value.
ISD 30A, di/dt 280A/μs, VDD V(BR)DSS
TJ 175°C.
,
Pulse width 1.0ms; duty cycle 2%.
R is measured at TJ of approximately 90°C.
2
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AUIRLR3915
Qualification Information†
Automotive
††
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive qualification.
IR’s Industrial and Consumer qualification level is granted by
extension of the higher Automotive level.
D-Pak
MSL1
Class M2 (+/- 200V) †††
Moisture Sensitivity Level
Machine Model
AEC-Q101-002
Class H1B (+/- 1000V) †††
AEC-Q101-001
Human Body Model
ESD
Class C5 (+/- 2000V) †††
AEC-Q101-005
Charged Device Model
Yes
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
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3
AUIRLR3915
10000
1000
100
10
1000
100
10
VGS
15V
10V
5.0V
3.0V
2.7V
2.5V
2.25V
2.0V
VGS
15V
10V
5.0V
3.0V
2.7V
2.5V
2.25V
2.0V
TOP
TOP
BOTTOM
BOTTOM
1
2.0V
2.0V
0.1
0.01
1
20μs PULSE WIDTH
20μs PULSE WIDTH
Tj = 175°C
Tj = 25°C
0.001
0.1
0.1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000.00
100.00
10.00
1.00
70
60
T
= 25°C
J
T
= 175°C
J
T
= 25°C
J
50
40
30
20
10
0
T
= 175°C
J
V
= 25V
DS
20μs PULSE WIDTH
0.10
1.0
3.0
5.0
7.0
9.0
11.0
13.0
15.0
0
10
I
20
30
40
50
60
V
, Gate-to-Source Voltage (V)
GS
,Drain-to-Source Current (A)
D
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Forward Transconductance
vs. Drain Current
4
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AUIRLR3915
12
10
8
100000
10000
1000
100
I
=
30A
D
V
= 0V,
f = 1 MHZ
GS
V
V
V
= 44V
= 27V
= 11V
DS
DS
DS
C
= C + C , C SHORTED
iss
gs gd ds
C
= C
gd
rss
C
= C + C
oss
ds gd
C
C
iss
6
oss
4
C
rss
2
0
10
0
10
20
30
40
50
60
70
1
10
100
Q
, Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6. Typical Gate Charge vs.
Fig 5. Typical Capacitance vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1000
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
100
10
1
°
T = 175
J
C
100μsec
°
T = 25
J
C
1msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
10msec
100
V
= 0 V
GS
0.1
0.0
0.5
1.0
1.5
2.0
1
10
1000
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-to-Source Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
nce
Forward Voltage
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5
AUIRLR3915
70
2.5
2.0
1.5
1.0
0.5
0.0
61A
=
I
D
LIMITED BY PACKAGE
60
50
40
30
20
10
0
V
= 10V
GS
25
50
75
100
125
150
175
-60 -40 -20
0
20 40 60 80 100 120 140 160 180
°
°
, Case Temperature ( C)
T
T , Junction Temperature
(
C)
C
J
Fig 10. Normalized On-Resistance
vs.Temperature
Fig 9. Maximum Drain Current vs.
Case Temperature
10
1
D = 0.50
0.20
0.10
0.05
P
DM
0.1
t
1
SINGLE PULSE
0.02
0.01
t
(THERMAL RESPONSE)
2
Notes:
1. Duty factor D =
t
/ t
1
2
2. Peak T
= P
x
Z
+ T
J
DM
thJC
C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
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AUIRLR3915
15V
500
400
300
200
100
0
I
D
TOP
12A
21A
30A
DRIVER
+
L
V
DS
BOTTOM
D.U.T
AS
R
G
V
DD
-
I
A
V
20V
GS
0.01
t
p
Fig 12a. Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
°
( C)
150
175
Starting Tj, Junction Temperature
I
AS
Fig 12c. Maximum Avalanche Energy
Fig 12b. Unclamped Inductive Waveforms
vs. Drain Current
Q
G
10 V
Q
Q
GD
GS
2.0
1.5
1.0
0.5
V
G
Charge
I
= 250μA
D
Fig 13a. Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.T.
50K
.2F
12V
.3F
+
V
DS
D.U.T.
-
-75 -50 -25
0
25 50 75 100 125 150 175 200
, Temperature ( °C )
V
GS
T
J
3mA
I
I
D
G
Current Sampling Resistors
Fig 14. Threshold Voltage vs. Temperature
Fig 13b. Gate Charge Test Circuit
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7
AUIRLR3915
1000
Duty Cycle = Single Pulse
100
Allowed avalanche Current vs
avalanche pulsewidth, tav
0.01
assuming
avalanche losses
Tj = 25°C due to
0.05
0.10
10
1
0.1
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15. Typical Avalanche Current vs.Pulsewidth
220
200
180
160
140
120
100
80
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of Tjmax. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
TOP
BOTTOM 10% Duty Cycle
= 30A
Single Pulse
I
D
4. PD (ave) = Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
60
40
6. Iav = Allowable avalanche current.
20
7. T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25°C in Figure 15, 16).
tav = Average time in avalanche.
175
0
25
50
75
100
125
150
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see figure 11)
Starting T , Junction Temperature (°C)
J
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 16. Maximum Avalanche Energy
vs. Temperature
8
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AUIRLR3915
Driver Gate Drive
P.W.
P.W.
D =
Period
D.U.T
Period
+
*
=10V
V
GS
CircuitLayoutConsiderations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
dv/dtcontrolledbyRG
RG
+
-
Body Diode
Forward Drop
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Inductor Curent
I
SD
Ripple 5%
* VGS = 5V for Logic Level Devices
Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
RD
VDS
VGS
D.U.T.
RG
+VDD
-
10V
PulseWidth µs
Duty Factor
Fig 18a. Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b. Switching Time Waveforms
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9
AUIRLR3915
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak Part Marking Information
PartNumber
AULR3915
DateCode
Y= Year
WW= Work Week
A=Automotive,LeadFree
IRLogo
YWWA
XX or XX
LotCode
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
10
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AUIRLR3915
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRL
TRR
16.3 ( .641 )
15.7 ( .619 )
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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11
AUIRLR3915
Ordering Information
Base part
number
Package Type
Standard Pack
Complete Part Number
Form
Tube
Tape and Reel
Tape and Reel Left
Tape and Reel Right
Quantity
75
2000
3000
3000
AUIRLR3915
Dpak
AUIRLR3915
AUIRLR3915TR
AUIRLR3915TRL
AUIRLR3915TRR
12
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AUIRLR3915
IMPORTANTNOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its
subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and
other changes to its products and services at any time and to discontinue any product or services without
notice. Part numbers designated with the AU prefix follow automotive industry and / or customer specific
requirements with regards to product discontinuance and process change notification. All products are sold
subject to IRs terms and conditions of sale supplied at the time of order acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in
accordance with IRs standard warranty. Testing and other quality control techniques are used to the extent
IR deems necessary to support this warranty. Except where mandated by government requirements, testing
of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible
for their products and applications using IR components. To minimize the risks with customer products and
applications, customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without
alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduc-
tion of this information with alterations is an unfair and deceptive business practice. IR is not responsible
or liable for such altered documentation. Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for
that product or service voids all express and any implied warranties for the associated IR product or service
and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical
implant into the body, or in other applications intended to support or sustain life, or in any other application
in which the failure of the IR product could create a situation where personal injury or death may occur. Should
Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall
indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distribu-
tors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out
of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized
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Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of
Defense, are designed and manufactured to meet DLA military specifications required by certain military,
aerospace or other applications. Buyers acknowledge and agree that any use of IR products not certified by
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that they are solely responsible for compliance with all legal and regulatory requirements in connection with
such use.
IR products are neither designed nor intended for use in automotive applications or environments unless
the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part
number including the designation AU. Buyers acknowledge and agree that, if they use any non-designated
products in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IRs Technical Assistance Center
http://www.irf.com/technical-info/
WORLDHEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
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13
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