AUIRLS3034TRR [INFINEON]
HEXFETPower MOSFET;
| 型号： | AUIRLS3034TRR |
| 厂家： | 
Infineon |
| 描述： | HEXFETPower MOSFET |
| 文件： | 总12页 (文件大小：257K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PD - 97716A
AUTOMOTIVE GRADE
AUIRLS3034
HEXFET® Power MOSFET
Features
D
S
VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
ID (Package Limited)
40V
1.4m
1.7m
●
●
●
●
●
●
●
●
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
G
343A
195A
D
Description
Specifically designed for Automotive applications, this HEXFET®
PowerMOSFETutilizesthelatestprocessingtechniquestoachieve
extremely low on-resistance per silicon area. Additional features of
this design are a 175°C junction operating temperature, fast
switching speed and improved repetitive avalanche rating . These
features combine to make this design an extremely efficient and
reliable device for use in Automotive applications and a wide variety
of other applications.
S
G
D2Pak
AUIRLS3034
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-
maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified.
Symbol
ID @ TC = 25°C
Parameter
Max.
343
243
195
1372
375
2.5
Units
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current
ID @ TC = 100°C
ID @ TC = 25°C
IDM
A
PD @TC = 25°C
W
Maximum Power Dissipation
Linear Derating Factor
W/°C
V
VGS
EAS
IAR
±20
255
Gate-to-Source Voltage
mJ
A
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
See Fig. 14, 15, 22a, 22b,
Repetitive Avalanche Energy
EAR
mJ
4.6
Peak Diode Recovery
dv/dt
TJ
V/ns
Operating Junction and
-55 to + 175
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
°C
300
10lbf in (1.1N m)
Mounting torque, 6-32 or M3 screw
Thermal Resistance
Symbol
Parameter
Typ.
–––
Max.
0.4
40
Units
R
Junction-to-Case
JC
°C/W
R
–––
Junction-to-Ambient (PCB Mount)
JA
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
11/29/11
AUIRLS3034
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
40 ––– –––
––– 0.04 ––– V/°C Reference to 25°C, ID = 5mA
Conditions
VGS = 0V, ID = 250μA
V
V
/ T
(BR)DSS
Breakdown Voltage Temp. Coefficient
J
–––
–––
1.0
1.4
1.6
1.7
2.0
2.5
VGS = 10V, ID = 195A
VGS = 4.5V, ID = 172A
RDS(on)
Static Drain-to-Source On-Resistance
m
VGS(th)
Gate Threshold Voltage
–––
V
S
VDS = VGS, ID = 250μA
gfs
Forward Transconductance
286 ––– –––
VDS = 10V, ID = 195A
RG(int)
IDSS
Internal Gate Resistance
Drain-to-Source Leakage Current
–––
2.1
–––
20
––– –––
VDS = 40V, VGS = 0V
μA
––– ––– 250
––– ––– 100
––– ––– -100
VDS = 40V, VGS = 0V, TJ = 125°C
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
VGS = 20V
nA
VGS = -20V
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
––– 108 162
Conditions
Qg
Total Gate Charge
ID = 185A
Qgs
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
–––
–––
–––
–––
29
54
54
65
–––
–––
–––
–––
V
DS = 20V
nC
ns
Qgd
VGS = 4.5V
Qsync
ID = 185A, VDS =0V, VGS = 4.5V
VDD = 26V
td(on)
tr
––– 827 –––
––– 97 –––
ID = 195A
td(off)
tf
Turn-Off Delay Time
Fall Time
R = 2.1
G
VGS = 4.5V
––– 355 –––
––– 10315 –––
––– 1980 –––
––– 935 –––
––– 2378 –––
––– 2986 –––
Ciss
Input Capacitance
VGS = 0V
Coss
Output Capacitance
Reverse Transfer Capacitance
VDS = 25V
Crss
ƒ = 1.0MHz
pF
Coss eff. (ER)
Coss eff. (TR)
VGS = 0V, VDS = 0V to 32V
VGS = 0V, VDS = 0V to 32V
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Diode Characteristics
Symbol
Parameter
Min. Typ. Max. Units
Conditions
D
S
IS
Continuous Source Current
––– –––
MOSFET symbol
343
(Body Diode)
Pulsed Source Current
(Body Diode)
showing the
integral reverse
A
––– –––
G
ISM
1372
p-n junction diode.
VSD
trr
Diode Forward Voltage
Reverse Recovery Time
––– –––
1.3
–––
–––
–––
–––
–––
V
TJ = 25°C, IS = 195A, VGS = 0V
TJ = 25°C
TJ = 125°C
TJ = 25°C
TJ = 125°C
TJ = 25°C
VR = 34V,
IF = 195A
di/dt = 100A/μs
–––
–––
–––
–––
–––
39
41
39
46
1.7
ns
Qrr
Reverse Recovery Charge
nC
A
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
ꢀ Pulse width 400μs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
Calcuted continuous current based on maximum allowable junction
temperature Bond wire current limit is 195A. Note that current
limitation arising from heating of the device leds may occur with
some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.013mH
RG = 25, IAS = 195A, VGS =10V. Part not recommended for use
above this value .
as Coss while VDS is rising from 0 to 80% VDSS
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS
When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer
to applocation note # AN-994.
.
.
R is measured at TJ approximately 90°C.
RJC value shown is at time zero.
ISD 195A, di/dt 841A/μs, VDD V(BR)DSS, TJ 175°C.
2
www.irf.com
AUIRLS3034
Qualification Information†
Automotive
††
(per AEC-Q101)
Qualification Level
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification level
is granted by extension of the higher Automotive level.
D2Pak
MSL1
Moisture Sensitivity Level
Class M4 (+/- 800V)†††
Machine Model
AEC-Q101-002
Class H3A (+/- 6000V)†††
AEC-Q101-001
Human Body Model
ESD
Class C5 (+/- 2000V)†††
AEC-Q101-005
Charged Device Model
Yes
RoHS Compliant
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
www.irf.com
3
AUIRLS3034
100000
10000
1000
100
100000
VGS
15V
10V
8.0V
4.5V
3.5V
3.0V
2.7V
2.5V
VGS
15V
10V
8.0V
4.5V
3.5V
3.0V
2.7V
2.5V
60μs PULSE WIDTH
Tj = 175°C
TOP
TOP
60μs PULSE WIDTH
Tj = 25°C
10000
BOTTOM
BOTTOM
1000
100
10
2.5V
2.5V
10
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10000
1000
100
10
2.0
1.5
1.0
0.5
I
= 195A
= 10V
D
V
GS
T
= 175°C
J
T
= 25°C
J
1
V
= 25V
DS
60μs PULSE WIDTH
0.1
1
2
3
4
5
-60 -40 -20 0 20 40 60 80 100120140160180
, Junction Temperature (°C)
T
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4. Normalized On-Resistance vs. Temperature
Fig 3. Typical Transfer Characteristics
100000
10000
1000
5.0
V
= 0V,
= C
f = 1 MHZ
GS
I = 185A
C
C
C
+ C , C
SHORTED
ds
D
V
V
= 32V
= 20V
iss
gs
gd
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
DS
DS
= C
rss
oss
gd
= C + C
ds
gd
C
iss
C
oss
C
rss
100
1
10
100
0
20
40
60
80
100 120 140
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
4
www.irf.com
AUIRLS3034
10000
1000
100
10
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100μsec
1msec
T
= 175°C
J
LIMITED BY PACKAGE
10msec
DC
T = 25°C
J
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
0.1
1.0
0.1
1
10
100
0.0
0.5
1.0
1.5
2.0
2.5
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
350
50
48
46
44
42
40
Id = 5mA
Limited By Package
300
250
200
150
100
50
0
25
50
75
100
125
150
175
-60 -40 -20 0 20 40 60 80 100120140160180
T
, Case Temperature (°C)
T
, Temperature ( °C )
C
J
Fig 9. Maximum Drain Current vs.
Fig 10. Drain-to-Source Breakdown Voltage
Case Temperature
2.5
1200
I
D
TOP
38.9A
65.3A
1000
800
600
400
200
0
2.0
1.5
1.0
0.5
0.0
BOTTOM 195A
0
5
10 15 20 25 30 35 40 45
Drain-to-Source Voltage (V)
25
50
75
100
125
150
175
Starting T , Junction Temperature (°C)
J
V
DS,
Fig 11. Typical COSS Stored Energy
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
www.irf.com
5
AUIRLS3034
1
D = 0.50
0.20
0.1
0.10
0.05
R1
R1
R2
R2
R3
R3
R4
R4
Ri (°C/W) i (sec)
0.02477
0.000025
J J
C
0.02
0.01
0.08004
0.000077
11
Ci= iRi
2 2
33
44
0.01
0.19057 0.001656
0.10481 0.008408
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
1000
100
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
0.01
0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
300
250
200
150
100
50
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
TOP
BOTTOM 1.0% Duty Cycle
= 195A
Single Pulse
I
D
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
0
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
25
50
75
100
125
150
175
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Starting T , Junction Temperature (°C)
J
Fig 15. Maximum Avalanche Energy vs. Temperature
6
www.irf.com
AUIRLS3034
3.0
2.5
2.0
1.5
1.0
0.5
0.0
14
12
10
8
I = 78A
F
V
= 34V
R
T = 25°C
J
T = 125°C
J
6
I
I
= 250μA
D
D
= 1.0mA
4
ID = 1.0A
2
0
-75 -50 -25
0
25 50 75 100 125 150 175
0
100
200
300
400
500
T , Temperature ( °C )
J
di /dt (A/μs)
F
Fig. 17 - Typical Recovery Current vs. dif/dt
Fig 16. Threshold Voltage vs. Temperature
14
400
I = 117A
I = 78A
F
F
12
10
8
V
= 34V
V
= 34V
R
R
T = 25°C
T = 25°C
J
J
300
200
100
0
T = 125°C
J
T = 125°C
J
6
4
2
0
0
100
200
300
400
500
0
100
200
300
400
500
di /dt (A/μs)
di /dt (A/μs)
F
F
Fig. 18 - Typical Recovery Current vs. dif/dt
Fig. 19 - Typical Stored Charge vs. dif/dt
400
I = 117A
F
V
= 34V
R
T = 25°C
J
300
200
100
0
T = 125°C
J
0
100
200
300
400
500
di /dt (A/μs)
F
Fig. 20 - Typical Stored Charge vs. dif/dt
www.irf.com
7
AUIRLS3034
Driver Gate Drive
P.W.
P.W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
-
D.U.T. I Waveform
SD
+
-
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
-
+
D.U.T. V Waveform
DS
Diode Recovery
dv/dt
V
DD
VDD
Re-Applied
Voltage
dv/dt controlled by RG
RG
+
-
Body Diode
Forward Drop
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Inductor Current
I
SD
Ripple
5%
* VGS = 5V for Logic Level Devices
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
-
I
A
V
2
GS
0.01
t
p
I
AS
Fig 22b. Unclamped Inductive Waveforms
Fig 22a. Unclamped Inductive Test Circuit
RD
VDS
V
DS
90%
VGS
D.U.T.
RG
+
VDD
-
VGS
10%
Pulse Width µs
Duty Factor
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 23a. Switching Time Test Circuit
Fig 23b. Switching Time Waveforms
Id
Current Regulator
Same Type as D.U.T.
Vds
Vgs
50K
.2F
12V
.3F
+
V
DS
D.U.T.
-
Vgs(th)
V
GS
3mA
I
I
D
G
Qgs1
Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 24a. Gate Charge Test Circuit
Fig 24b. Gate Charge Waveform
8
www.irf.com
AUIRLS3034
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information
Part Number
AULS3034
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
IR Logo
YWWA
XX or XX
Lot Code
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
www.irf.com
9
AUIRLS3034
D2Pak Tape & Reel Information
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
10
www.irf.com
AUIRLS3034
Ordering Information
Base part number Package Type
Standard Pack
Form
Complete Part Number
Quantity
AUIRLS3034
D2Pak
Tube
Tape and Reel Left
Tape and Reel Right
50
800
800
AUIRLS3034
AUIRLS3034TRL
AUIRLS3034TRR
www.irf.com
11
AUIRLS3034
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make
corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or
services without notice. Part numbers designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards
to product discontinuance and process change notification. All products are sold subject to IR’s terms and conditions of sale supplied at the time of order
acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR’s standard warranty. Testing
and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government
requirements, testing of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR
components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all
associatedwarranties, conditions, limitations, andnotices. Reproductionofthisinformationwithalterationsisanunfairanddeceptivebusinesspractice.
IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and
any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any
such statements.
IRproductsarenotdesigned, intended, orauthorizedforuseascomponentsinsystemsintendedforsurgicalimplantintothebody, orinotherapplications
intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or
death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold
International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses,
and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized
use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product.
Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense, are designed and manufactured
to meet DLA military specifications required by certain military, aerospace or other applications. Buyers acknowledge and agree that any use of IR
products not certified by DLA as military-grade, in applications requiring military grade products, is solely at the Buyer’s own risk and that they are
solely responsible for compliance with all legal and regulatory requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR
as compliant with ISO/TS 16949 requirements and bear a part number including the designation “AU”. Buyers acknowledge and agree that, if they use
any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IR’s Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
12
www.irf.com
相关型号：
AUIRLS4030-7TRL
Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-7
INFINEON
©2020 ICPDF网 联系我们和版权申明