AUIRLS3114ZTRR [INFINEON]

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;


型号：	AUIRLS3114ZTRR
厂家：	Infineon
描述：	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
文件：	总13页 (文件大小：240K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

AUTOMOTIVE GRADE

AUIRLS3114Z

HEXFET^®Power MOSFET

Features

Advanced Process Technology

V_DSS

R_DS(on)typ.

max.

40V

Ultra Low On-Resistance

Logic Level Gate Drive

EnhanceddV/dTanddI/dTcapability

175°COperatingTemperature

Fast Switching

Repetitive Avalanche Allowed up to Tjmax

Lead-Free,RoHSCompliant

AutomotiveQualified*

3.8m

4.9m

122A

I_D

(Silicon Limited)

I_D

56A

(Wirebond Limited)

Description

Specifically designed for Automotive applications, this HEXFET^®

PowerMOSFETutilizesthelatestprocessingtechniquestoachieve

extremelylowon-resistancepersiliconarea. Additionalfeaturesof

thisdesign area175°Cjunctionoperatingtemperature,fastswitch-

ingspeedandimprovedrepetitiveavalancherating.Thesefeatures

combine to make this design an extremely efficient and reliable

deviceforuseinAutomotiveapplicationsandawidevarietyofother

applications.

D²Pak

AUIRLS3114Z

Gate

Drain

Source

Standard Pack

Form

Base Part Number

Package Type

Orderable Part Number

Quantity

Tube

800

AUIRLS3114Z

AUIRLS3114ZTRL

AUIRLS3114ZTRR

AUIRLS3114Z

D2-Pak

Tape and Reel Left

Tape and Reel Right

AbsoluteMaximumRatings

Stressesbeyondthoselistedunder“AbsoluteMaximumRatings”maycausepermanentdamagetothedevice. Thesearestressratingsonly;andfunctional

operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated

conditionsforextendedperiodsmayaffectdevicereliability.Thethermalresistanceandpowerdissipationratingsaremeasuredunderboardmountedand

still air conditions. Ambient temperature (T_A) is 25°C, unless otherwise specified.

Parameter

Max.

122

Units

I_D@ T_C= 25°C

Continuous Drain Current, V_GS@ 10V (Silicon Limited)

I_D@ T_C= 100°C Continuous Drain Current, V_GS@ 10V (Silicon Limited)

I_D@ T_C= 25°C

I_DM

Continuous Drain Current, V_GS@ 10V (Wirebond Limited)

Pulsed Drain Current

488

143

0.95

± 20

168

518

P_D@T_C= 25°C

Maximum Power Dissipation

Linear Derating Factor

W/°C

V_GS

Gate-to-Source Voltage

E_{AS (Thermally Limited)}

Single Pulse Avalanche Energy

Avalanche Current

E_{AS (Tested)}

I_AR

See Fig. 12a, 12b, 15, 16

E_AR

Repetitive Avalanche Energy

Peak Diode Recovery

2.3

dv/dt

T_J

V/ns

-55 to + 175

Operating Junction and

T_STG

°C

Storage Temperature Range

Soldering Temperature, for 10 seconds (1.6mm from case)

300

Thermal Resistance

Parameter

Typ.

–––

Max.

1.05

Units

R_θ

Junction-to-Case

°C/W

R_θ

–––

Junction-to-Ambient (PCB Mount)

HEXFET^®is a registered trademark of International Rectifier.

*Qualification standards can be found at http://www.irf.com/

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AUIRLS3114Z

Static Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Drain-to-Source Breakdown Voltage

Breakdown Voltage Temp. Coefficient

Static Drain-to-Source On-Resistance

Gate Threshold Voltage

Min. Typ. Max. Units

Conditions

V_GS= 0V, I_D= 250μA

V_(BR)DSS

ΔV_(BR)DSS/ΔT_J

R_DS(on)

–––

0.03

3.8

–––

4.9

–––

V/°C Reference to 25°C, I_D= 1mA

V_GS= 10V, I_D= 56A

V_DS= V_GS, I_D= 100μA

V_DS= 10V, I_D= 56A

V_GS(th)

1.7

2.5

V_GS(th)

Gate Threshold Voltage Coefficient

Forward Transconductance

–––

103

–––

-6.6

–––

0.8

––– mV/°C

gfs

R_G

–––

Internal Gate Resistance

I_DSS

Drain-to-Source Leakage Current

–––

V_DS= 40V, V_GS= 0V

V_DS= 40V, V_GS= 0V, T_J= 125°C

V_GS= 16V

μA

250

100

-100

I_GSS

Gate-to-Source Forward Leakage

Gate-to-Source Reverse Leakage

V_GS= -16V

Dynamic Electrical Characteristics @ T_J= 25°C (unless otherwise specified)

Parameter

Total Gate Charge

Min. Typ. Max. Units

Conditions

Q_g

–––

I_D= 56A

Q_gs

Q_gd

t_d(on)

t_r

Gate-to-Source Charge

Gate-to-Drain ("Miller") Charge

Turn-On Delay Time

Rise Time

–––

V_DS=20V

V_GS= 4.5V

V_DD= 20V

–––

271

I_D= 56A

t_d(off)

t_f

R_G= 3.7

V_GS= 4.5V

V_GS= 0V

Turn-Off Delay Time

Fall Time

C_iss

C_oss

C_rss

C_oss

C_osseff.

Input Capacitance

3617

633

345

2378

570

875

Output Capacitance

Reverse Transfer Capacitance

Output Capacitance

Effective Output Capacitance

_DS= 25V

ƒ = 1.0 MHz, See Fig. 5

_GS= 0V, V_DS= 1.0V, ƒ = 1.0MHz

V_GS= 0V, V_DS= 32V, ƒ = 1.0MHz

V_GS= 0V, V_DS= 0V to 32V

Diode Characteristics

Parameter

Continuous Source Current

Min. Typ. Max. Units

Conditions

MOSFET symbol

I_S

–––

––– 122

(Body Diode)

showing the

I_SM

Pulsed Source Current

integral reverse

–––

488

(Body Diode)

p-n junction diode.

V_SD

t_rr

Diode Forward Voltage

–––

1.3

T_J= 25°C, I_S= 56A, V_GS= 0V

T_J= 25°C, I_F= 56A, V_DD= 20V,

di/dt = 100A/μs

Reverse Recovery Time

Reverse Recovery Charge

Forward Turn-On Time

Q_rr

t_on

Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:

I_SD≤ 56A, di/dt ≤ 263A/μs, V_DD≤ V_(BR)DSS, T_J≤ 175°C.

ꢀ Pulse width ≤ 1.0ms; duty cycle ≤ 2%.

C_osseff. is a fixed capacitance that gives the same charging

Calculated continuous current based on maximum

allowable junction temperature. Bond wire current limit is

56A. Note that current limitations arising from heating of

the device leads may occur with some lead mounting

time as C_osswhile V_DSis rising from 0 to 80% V_DSS

When mounted on 1" square PCB (FR-4 or G-10 Material).

For recommended footprint and soldering techniques refer

to application note #AN-994.

arrangements. (Refer to AN-1140)

Repetitive rating; pulse width limited by max. junction

temperature.

Limited by T_Jmax, starting T_J= 25°C, L = 0.107mH,

R_G= 50Ω, I_AS= 56A, V_GS=10V. Part not recommended

for use above this value.

R_θis measured at T_Japproximately 90°C

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AUIRLS3114Z

1000

100

1000

100

VGS

15V

10V

8.0V

4.5V

3.5V

3.0V

2.8V

2.5V

VGS

15V

10V

8.0V

4.5V

3.5V

3.0V

2.8V

2.5V

TOP

BOTTOM

2.5V

60μs PULSE WIDTH

Tj = 175°C

≤

60μs PULSE WIDTH

Tj = 25°C

≤

0.1

100

1000

0.1

100

1000

, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics

Fig 2. Typical Output Characteristics

175

150

125

100

1000

100

= 25°C

T = 175°C

= 175°C

= 25°C

= 25V

= 10V

≤

60μs PULSE WIDTH

0.1

I ,Drain-to-Source Current (A)

, Gate-to-Source Voltage (V)

Fig 4. Typical Forward Transconductance

Fig 3. Typical Transfer Characteristics

vs. Drain Current

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AUIRLS3114Z

100000

10000

1000

14.0

12.0

10.0

8.0

= 0V,

= C

f = 1 MHZ

I = 56A

+ C , C

SHORTED

iss

= C

rss

oss

= 32V

= C + C

= 20V

VDS= 8V

iss

6.0

oss

4.0

rss

2.0

100

0.0

, Drain-to-Source Voltage (V)

100

10 20 30 40 50 60 70 80 90

Q , Total Gate Charge (nC)

Fig 6. Typical Gate Charge vs.

Fig 5. Typical Capacitance vs.

Gate-to-Source Voltage

Drain-to-Source Voltage

10000

1000

100

1000

100

OPERATION IN THIS AREA

LIMITED BY R

(on)

= 175°C

100μsec

1msec

10msec

= 25°C

Tc = 25°C

Tj = 175°C

Single Pulse

= 0V

0.1

1.0

0.1

100

0.0

0.5

1.0

1.5

2.0

2.5

, Drain-to-Source Voltage (V)

, Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Fig 8. Maximum Safe Operating Area

Forward Voltage

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AUIRLS3114Z

140

120

100

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

= 56A

Wirebond Limitation

= 10V

100

125

150

175

-60 -40 -20 0 20 40 60 80 100120140160180

, Junction Temperature (°C)

, Case Temperature (°C)

Fig 9. Maximum Drain Current vs.

Fig 10. Normalized On-Resistance

Case Temperature

vs. Temperature

D = 0.50

0.20

0.10

0.05

0.1

0.01

0.02

0.01

SINGLE PULSE

( THERMAL RESPONSE )

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + Tc

0.001

1E-006

1E-005

0.0001

0.001

0.01

0.1

, Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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AUIRLS3114Z

15V

700

600

500

400

300

200

100

DRIVER

TOP

9.6A

20A

BOTTOM 56A

D.U.T

V0_GV_S

0.01

Fig 12a. Unclamped Inductive Test Circuit

(BR)DSS

100

125

150

175

Starting T , Junction Temperature (°C)

Fig 12c. Maximum Avalanche Energy

vs. Drain Current

Fig 12b. Unclamped Inductive Waveforms

2.6

2.4

2.2

2.0

1.8

1.6

1.4

10 V

Charge

= 100μA

1.2

1.0

0.8

0.6

0.4

ID = 250μA

= 1.0mA

Fig 13a. Basic Gate Charge Waveform

ID = 10mA

= 1.0A

-75 -50 -25

25 50 75 100 125 150 175

T , Temperature ( °C )

VCC

Fig 14. Threshold Voltage vs. Temperature

DUT

Fig 13b. Gate Charge Test Circuit

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AUIRLS3114Z

1000

100

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming ΔTj = 150°C and

Tstart =25°C (Single Pulse)

Duty Cycle = Single Pulse

0.01

0.05

0.10

Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming ΔΤ j = 25°C and

Tstart = 150°C.

0.1

1.0E-06

1.0E-05

1.0E-04

1.0E-03

1.0E-02

1.0E-01

tav (sec)

Fig 15. Typical Avalanche Current vs.Pulsewidth

180

160

140

120

100

Notes on Repetitive Avalanche Curves , Figures 15, 16:

(For further info, see AN-1005 at www.irf.com)

1. Avalanche failures assumption:

Purely a thermal phenomenon and failure occurs at a

temperature far in excess of T_jmax. This is validated for

every part type.

2. Safe operation in Avalanche is allowed as long asT_jmaxis

not exceeded.

3. Equation below based on circuit and waveforms shown in

Figures 12a, 12b.

TOP

BOTTOM 1.0% Duty Cycle

= 56A

Single Pulse

4. P_{D (ave)}= Average power dissipation per single

avalanche pulse.

5. BV = Rated breakdown voltage (1.3 factor accounts for

voltage increase during avalanche).

6. I_av= Allowable avalanche current.

7. ΔT = Allowable rise in junction temperature, not to exceed

T_jmax(assumed as 25°C in Figure 15, 16).

t_{av =}Average time in avalanche.

100

125

150

175

D = Duty cycle in avalanche = t_av·f

Z_thJC(D, t_av) = Transient thermal resistance, see figure 11)

Starting T , Junction Temperature (°C)

P_{D (ave)}= 1/2 ( 1.3·BV·I_av) = DT/ Z_thJC

Fig 16. Maximum Avalanche Energy

I_av= 2DT/ [1.3·BV·Z_th]

E_{AS (AR)}= P_{D (ave)}·t_av

vs. Temperature

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AUIRLS3114Z

Driver Gate Drive

P.W.

Period

D.U.T

Period

D =

=10V

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

D.U.T. I Waveform

Reverse

Recovery

Current

Body Diode Forward

Current

di/dt

D.U.T. V Waveform

Diode Recovery

dv/dt

V_DD

Re-Applied

Voltage

•

dv/dt controlled by R_G

• Driver same type as D.U.T.

R_G

Body Diode

Forward Drop

• I_SDcontrolled by Duty Factor "D"

• D.U.T. - Device Under Test

Inductor Curent

Ripple

≤ 5%

* V_GS= 5V for Logic Level Devices

Fig 17. Peak Diode Recovery dv/dt Test Circuit for N-Channel

HEXFET^®Power MOSFETs

R_D

V_DS

V_GS

D.U.T.

R_G

⁺V_DD

10V

Pulse Width ≤ 1 µs

Duty Factor ≤ 0.1 %

Fig 18a. Switching Time Test Circuit

90%

10%

d(on)

d(off)

Fig 18b. Switching Time Waveforms

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AUIRLS3114Z

D²Pak Package Outline (Dimensions are shown in millimeters (inches))

D²Pak Part Marking Information

PartNumber

AULS3114Z

Date Code

Y= Year

WW= Work Week

A= Automotive, Lead Free

IR Logo

YWWA

XX or XX

Lot Code

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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AUIRLS3114Z

D²Pak (TO-263AB) Tape & Reel Information

Dimensions are shown in millimeters (inches)

TRR

1.60 (.063)

1.50 (.059)

1.60 (.063)

1.50 (.059)

4.10 (.161)

3.90 (.153)

0.368 (.0145)

0.342 (.0135)

FEED DIRECTION

TRL

11.60 (.457)

11.40 (.449)

1.85 (.073)

1.65 (.065)

24.30 (.957)

23.90 (.941)

15.42 (.609)

15.22 (.601)

1.75 (.069)

1.25 (.049)

10.90 (.429)

10.70 (.421)

4.72 (.136)

4.52 (.178)

16.10 (.634)

15.90 (.626)

FEED DIRECTION

13.50 (.532)

12.80 (.504)

27.40 (1.079)

23.90 (.941)

330.00

(14.173)

MAX.

60.00 (2.362)

MIN.

30.40 (1.197)

MAX.

NOTES :

1. COMFORMS TO EIA-418.

2. CONTROLLING DIMENSION: MILLIMETER.

3. DIMENSION MEASURED @ HUB.

4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.

26.40 (1.039)

24.40 (.961)

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/

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AUIRLS3114Z

Qualification Information^†

Automotive

††

(per AEC-Q101)

Comments:

This part

number(s) passed

Qualification Level

Automotive qualification. IR’s Industrial and

Consumer qualification level is granted by

extension of the higher Automotive level.

Moisture Sensitivity Level

MSL1

Class M4(+/- 600V )^†††

3L-D2 PAK

Machine Model

(per AEC-Q101-002)

Class H1C(+/- 2000V )^†††

(per AEC-Q101-001)

ESD

Human Body Model

Class C5(+/- 2000V )^†††

(per AEC-Q101-005)

Charged Device Model

RoHS Compliant

Yes

†

Qualification standards can be found at International Rectifier’s web site: http//www.irf.com/

†† Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.

††† Highest passing voltage

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AUIRLS3114Z

IMPORTANTNOTICE

Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries

(IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its

products and services at any time and to discontinue any product or services without notice. Part numbers

designated with the “AU” prefix follow automotive industry and / or customer specific requirements with regards to

productdiscontinuanceandprocesschangenotification. AllproductsaresoldsubjecttoIR’stermsandconditions

of sale supplied at the time of order acknowledgment.

IRwarrantsperformanceofitshardwareproductstothespecificationsapplicableatthetimeofsaleinaccordance

withIR’sstandardwarranty. TestingandotherqualitycontroltechniquesareusedtotheextentIRdeemsnecessary

to support this warranty. Except where mandated by government requirements, testing of all parameters of each

product is not necessarily performed.

IRassumesnoliabilityforapplicationsassistanceorcustomerproductdesign.Customersareresponsiblefortheir

products and applications using IR components. To minimize the risks with customer products and applications,

customers should provide adequate design and operating safeguards.

ReproductionofIRinformationinIRdatabooksordatasheetsispermissibleonlyifreproductioniswithoutalteration

and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this

information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such

altered documentation. Information of third parties may be subject to additional restrictions.

Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that

product or service voids all express and any implied warranties for the associated IR product or service and is an

unfair and deceptive business practice. IR is not responsible or liable for any such statements.

IRproductsarenotdesigned,intended,orauthorizedforuseascomponentsinsystemsintendedforsurgicalimplant

intothebody,orinotherapplicationsintendedtosupportorsustainlife,orinanyotherapplicationinwhichthefailure

oftheIRproductcouldcreateasituationwherepersonalinjuryordeathmayoccur. ShouldBuyerpurchaseoruse

IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International

Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs,

damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal

injuryordeathassociatedwithsuchunintendedorunauthorizeduse,evenifsuchclaimallegesthatIRwasnegligent

regarding the design or manufacture of the product.

OnlyproductscertifiedasmilitarygradebytheDefenseLogisticsAgency(DLA)oftheUSDepartmentofDefense,

aredesignedandmanufacturedtomeetDLAmilitaryspecificationsrequiredbycertainmilitary,aerospaceorother

applications. Buyers acknowledge and agree that any use of IR products not certified by DLA as military-grade, in

applications requiring military grade products, is solely at the Buyer’s own risk and that they are solely responsible

for compliance with all legal and regulatory requirements in connection with such use.

IRproductsareneitherdesignednorintendedforuseinautomotiveapplicationsorenvironmentsunlessthespecific

IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including

thedesignation“AU”. Buyersacknowledgeandagreethat, iftheyuseanynon-designatedproductsinautomotive

applications, IR will not be responsible for any failure to meet such requirements.

For technical support, please contact IR’s Technical Assistance Center

http://www.irf.com/technical-info/

WORLDHEADQUARTERS:

101 N. Sepulveda Blvd., El Segundo, California 90245

Tel:(310)252-7105

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AUIRLS3114Z

Revision History

Date

Comments

Added "Logic Level Gate Drive" bullet in the features section on page 1

Updated data sheet with new IR corporate template

•

3/3/2014

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AUIRLS3114ZTRR [INFINEON]

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