BAS19 [INFINEON]
Silicon Switching Diodes (High-speed, high-voltage switch); 硅开关二极管（高速，高电压开关）
| 型号： | BAS19 |
| 厂家： | 
Infineon |
| 描述： | Silicon Switching Diodes (High-speed, high-voltage switch) |
| 文件： | 总4页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Silicon Switching Diodes
BAS 19
… BAS 21
● High-speed, high-voltage switch
Package1)
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
BAS 19
BAS 20
BAS 21
JPs
JRs
JSs
Q62702-A95
Q62702-A113
Q62702-A79
SOT-23
Maximum Ratings
Parameter
Symbol
Values
Unit
BAS 19
BAS 20
BAS 21
Reverse voltage
V
V
R
100
120
150
200
250
V
Peak reverse voltage
Forward current
RM
200
IF
250
mA
Peak forward current
Total power dissipation, T
Junction temperature
I
FM
625
S
= 70 ˚C Ptot
350
mW
˚C
T
T
j
150
Storage temperature range
stg
– 65 … + 150
Thermal Resistance
Junction - ambient2)
R
th JA
th JS
≤ 300
≤ 230
K/W
Junction - soldering point
R
1)
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
2)
07.94
Semiconductor Group
1
BAS 19
… BAS 21
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Breakdown voltage1)
V(BR)
V
120
200
250
–
–
–
–
–
–
I(BR) = 100 µA
BAS 19
BAS 20
BAS 21
Forward voltage
VF
I
F
= 100 mA
= 200 mA
–
–
–
–
1
1.25
IF
Reverse current
IR
V
R
= VR max
= VR max; T
–
–
–
–
100
100
nA
µA
VR
j
= 150 ˚C
AC characteristics
Diode capacitance
C
D
–
–
–
–
5
pF
ns
VR
= 0 V, f = 1 MHz
Reverse recovery time
= 30 mA, I = 30 mA, R
measured at I = 3 mA
t
rr
50
IF
R
L
= 100 Ω
R
Test circuit for reverse recovery time
Pulse generator: t
p
r
= 100 ns, D = 0.05
= 0.6 ns, R = 50 Ω
Oscillograph: R = 50 Ω
= 0.35 ns
C ≤ 1 pF
t
j
t
r
1)
Pulse test: tp ≤ 300 µs, D = 2 %.
Semiconductor Group
2
BAS 19
… BAS 21
Forward current I
F
= f (T
A
*; TS
)
Reverse current I
R
= f (T
A
)
* Package mounted on epoxy
Forward current I
F
= f (V
F
)
Forward voltage V
F
= f (T
A
)
Semiconductor Group
3
BAS 19
… BAS 21
Reverse voltage V
R
= f (T
A
)
Peak forward current IFM = f (t)
Semiconductor Group
4
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