BAS21E6327XT [INFINEON]

Rectifier Diode, 1 Element, 0.25A, 200V V(RRM), Silicon,;
BAS21E6327XT
型号: BAS21E6327XT
厂家: Infineon    Infineon
描述:

Rectifier Diode, 1 Element, 0.25A, 200V V(RRM), Silicon,

光电二极管
文件: 总9页 (文件大小:117K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BAS21...  
Silicon Switching Diode  
For high-speed switching applications  
High breakdown voltage  
1)  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
BAS21  
BAS21-03W  
BAS21U  
6
5
4
3
D
1
D
2
D
3
1
2
1
2
3
1
2
Type  
Package  
SOT23  
SOD323  
SC74  
Configuration  
single  
Marking  
JSs  
BAS21  
BAS21-03W  
BAS21U  
single  
D
parallel triple  
JSs  
Maximum Ratings at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Value  
200  
Unit  
V
Diode reverse voltage  
Peak reverse voltage  
Forward current  
V
V
R
250  
RM  
250  
mA  
I
F
625  
Peak forward current  
I
FM  
Peak forward current  
I
625  
mA  
A
FM  
Surge forward current, t = 10 µs  
Non-repetitive peak surge forward current  
Total power dissipation  
I
4
-
FS  
I
FSM  
mW  
P
tot  
BAS21, T 70°C  
350  
250  
250  
S
BAS21-03W, T 124°C  
S
BAS21U, T 122°C  
S
150  
°C  
Junction temperature  
Storage temperature  
T
j
T
-65 ... 150  
stg  
1Pb-containing package may be available upon special request  
2007-04-19  
1
BAS21...  
Thermal Resistance  
Parameter  
Symbol  
Value  
Unit  
1)  
K/W  
Junction - soldering point  
BAS21  
R
thJS  
230  
105  
110  
BAS21-03W  
BAS21U  
Electrical Characteristics at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Values  
Unit  
min.  
typ. max.  
DC Characteristics  
250  
-
-
V
Breakdown voltage  
V
(BR)  
I
= 100 µA  
(BR)  
Reverse current  
V = 200 V  
I
µA  
R
-
-
-
-
0.1  
R
V = 200 V, T = 150 °C  
100  
R
A
V
Forward voltage  
I = 100 mA  
V
F
-
-
-
-
1
F
I = 200 mA  
1.25  
F
AC Characteristics  
-
-
-
-
5
pF  
ns  
Diode capacitance  
C
T
V = 0 V, f = 1 MHz  
R
Reverse recovery time  
t
50  
rr  
I = 30 mA, I = 30 mA, measured at I = 3mA,  
F
R
R
R = 100  
L
Test circuit for reverse recovery time  
D.U.T.  
Puls generator: t = 1µs, D = 0.05  
p
t = 0.6ns, R = 50Ω  
r
i
Oscillograph  
Ι F  
Oscillograph: R = 50, t = 0.35ns, C 1pF  
r
EHN00018  
1For calculation of RthJA please refer to Application Note Thermal Resistance  
2007-04-19  
2
BAS21...  
Reverse current I = ƒ (T )  
Forward Voltage V = ƒ (T )  
F A  
R
A
V = 200V  
I = Parameter  
R
F
BAS 19...21  
EHB00029  
BAS 19...21  
EHB00027  
102  
1.5  
A
µ
V
Ι F = 625 mA  
VF  
Ι R  
max  
101  
5
250 mA  
100 mA  
1.0  
0.5  
typ.  
100  
5
10 mA  
10-1  
5
10-2  
0.0  
0
0
50  
100  
150  
50  
100  
˚C 150  
˚C  
TA  
TA  
Forward current I = ƒ (V )  
Forward current I = ƒ (T )  
F S  
F
F
BAS21-03W  
BAS 19...21  
EHB00028  
800  
mA  
700  
300  
mA  
ΙF  
600  
500  
400  
300  
200  
100  
0
200  
150  
100  
50  
0
°C  
0
15 30 45 60 75 90 105 120  
150  
0.0  
0.5  
1.0  
V
1.5  
T
S
VF  
2007-04-19  
3
BAS21...  
Forward current I = ƒ (T )  
Permissible Puls Load R  
= ƒ (t )  
F
S
thJS  
p
BAS21U  
BAS21  
10 3  
10 2  
10 1  
10 0  
10 -1  
250  
mA  
150  
100  
50  
D = 0.5  
0.2  
0.1  
0.05  
0.02  
0.01  
0.005  
0
0
0
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
°C  
s
15 30 45 60 75 90 105 120  
150  
T
t
P
S
Permissible Pulse Load  
Permissible Puls Load R  
= ƒ (t )  
thJS p  
I
/ I  
= ƒ (t )  
BAS21-03W  
Fmax FDC  
BAS21  
10 2  
p
10 3  
K/W  
10 2  
10 1  
10 0  
10 -1  
D = 0  
0.005  
0.01  
0.02  
0.05  
0.1  
D=0.5  
0.2  
0.1  
0.05  
0.02  
0.01  
0.005  
0
10 1  
0.2  
0.5  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
s
s
t
t
P
P
2007-04-19  
4
BAS21...  
Permissible Pulse Load  
/ I = ƒ (t )  
Permissible Puls Load R  
= ƒ (t )  
thJS p  
I
BAS21U  
Fmax FDC  
p
BAS21-03W  
10 2  
10 3  
K/W  
D=0  
0.005  
0.01  
0.02  
0.05  
0.1  
10 2  
0.2  
0.5  
10 1  
10 1  
D=0.5  
0.2  
0.1  
0.05  
0.02  
0.01  
0.005  
0
10 0  
10 0  
10 -6  
10 -1  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
s
s
t
t
P
P
Permissible Pulse Load  
I
/ I  
= ƒ (t )  
p
Fmax FDC  
BAS21U  
10 2  
D=0  
0.005  
0.01  
0.02  
0.05  
0.1  
10 1  
0.2  
0.5  
10 0  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
s
t
P
2007-04-19  
5
Package SC74  
BAS21...  
Package Outline  
±0.2  
2.9  
B
1.1 MAX.  
(2.25)  
+0.1  
-0.06  
0.15  
(0.35)  
6
1
5
2
4
3
+0.1  
-0.05  
A
0.35  
0.95  
M
0.2  
B 6x  
Pin 1  
marking  
0.1 MAX.  
M
0.2  
A
1.9  
Foot Print  
0.5  
0.95  
Marking Layout (Example)  
Small variations in positioning of  
Date code, Type code and Manufacture are possible.  
Manufacturer  
2005, June  
Date code (Year/Month)  
Pin 1 marking  
Laser marking  
BCW66H  
Type code  
Standard Packing  
Reel ø180 mm = 3.000 Pieces/Reel  
Reel ø330 mm = 10.000 Pieces/Reel  
For symmetric types no defined Pin 1 orientation in reel.  
4
0.2  
3.15  
1.15  
Pin 1  
marking  
2007-04-19  
6
Package SOD323  
BAS21...  
Package Outline  
+0.2  
-0.1  
0.9  
+0.2  
-0.1  
1.25  
±0.05  
0
A
2
Cathode  
marking  
1
+0.1  
-0.05  
+0.05  
0.3  
-0.2  
0.3  
+0.1  
-0.06  
0.15  
M
0.25  
A
Foot Print  
0.6  
Marking Layout (Example)  
BAR63-03W  
Type code  
Cathode marking  
Laser marking  
Standard Packing  
Reel ø180 mm = 3.000 Pieces/Reel  
Reel ø330 mm = 10.000 Pieces/Reel  
0.2  
4
1
0.65  
1.35  
Cathode  
marking  
2007-04-19  
7
Package SOT23  
BAS21...  
Package Outline  
±0.1  
1
0.1 MAX.  
±0.1  
2.9  
B
3
1
2
1)  
+0.1  
-0.05  
0.4  
A
0.08...0.15  
C
0.95  
0...8˚  
1.9  
0.25 B C  
1) Lead width can be 0.6 max. in dambar area  
M
M
0.2  
A
Foot Print  
0.8  
0.8  
1.2  
Marking Layout (Example)  
Manufacturer  
2005, June  
Date code (YM)  
EH  
s
Pin 1  
BCW66  
Type code  
Standard Packing  
Reel ø180 mm = 3.000 Pieces/Reel  
Reel ø330 mm = 10.000 Pieces/Reel  
4
0.2  
0.9  
1.15  
3.15  
Pin 1  
2007-04-19  
8
BAS21...  
Edition 2006-02-01  
Published by  
Infineon Technologies AG  
81726 München, Germany  
© Infineon Technologies AG 2007.  
All Rights Reserved.  
Attention please!  
The information given in this dokument shall in no event be regarded as a guarantee  
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any  
examples or hints given herein, any typical values stated herein and/or any information  
regarding the application of the device, Infineon Technologies hereby disclaims any  
and all warranties and liabilities of any kind, including without limitation warranties of  
non-infringement of intellectual property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices  
please contact your nearest Infineon Technologies Office (www.infineon.com).  
Warnings  
Due to technical requirements components may contain dangerous substances.  
For information on the types in question please contact your nearest  
Infineon Technologies Office.  
Infineon Technologies Components may only be used in life-support devices or  
systems with the express written approval of Infineon Technologies, if a failure of  
such components can reasonably be expected to cause the failure of that  
life-support device or system, or to affect the safety or effectiveness of that  
device or system.  
Life support devices or systems are intended to be implanted in the human body,  
or to support and/or maintain and sustain and/or protect human life. If they fail,  
it is reasonable to assume that the health of the user or other persons  
may be endangered.  
2007-04-19  
9

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