BAS40-06B5003 [INFINEON]

Rectifier Diode, Schottky, 2 Element, 0.12A, 40V V(RRM), Silicon, SOT-23, 3-PIN;


型号：	BAS40-06B5003
厂家：	Infineon
描述：	Rectifier Diode, Schottky, 2 Element, 0.12A, 40V V(RRM), Silicon, SOT-23, 3-PIN
文件：	总8页 (文件大小：219K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BAS40...B5000 / B5003

Silicon Schottky Diode

• General-purpose diode for high-speed switchhing

• Circuit protected

• Voltage clamping

• High-level detecting and mixing

• Improved operating temperature range

due to extra-low thermal resistance

(see attached Forward current curves)

• High volume packing size:

B5000: 9 x 10k reels, B5003: 10 x 3k reels

• Not for automotive applications*

BAS40

BAS40-04

BAS40-05

BAS40-06

Type

Package

SOT23

Configuration

single

series

common cathode

common anode

L (nH) Marking

BAS40

1.8

43s

44s

45s

46s

BAS40-04

BAS40-05

BAS40-06

* Automotive qualification ongoing

2006-08-04

BAS40...B5000 / B5003

Maximum Ratings at T = 25°C, unless otherwise specified

Parameter

Diode reverse voltage

Forward current

Non-repetitive peak surge forward current

(t ≤ 10 µσ)

Symbol

Value

120

200

Unit

FSM

°C

Total power dissipation

tot

BAS40, T ≤ 118 °C

250

BAS40-04, BAS40-06, T ≤ 110° C

BAS40-05, T ≤ 104°C

150

Junction temperature

Operating temperature range

Storage temperature

-55 ... 125

-55 ... 150

stg

Thermal Resistance

Parameter

Junction - soldering point

Symbol

thJS

Value

Unit

K/W

BAS40

BAS40-04, BAS40-06

BAS40-05

≤ 130

≤ 160

≤ 185

¹For calculation of R

please refer to Application Note Thermal Resistance

thJA

2006-08-04

BAS40...B5000 / B5003

Electrical Characteristics at T = 25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ. max.

DC Characteristics

Breakdown voltage

(BR)

= 10 µA

(BR)

Reverse current

µA

V = 30 V

Forward voltage

I = 1 mA

250

350

600

310

450

720

380

500

1000

I = 10 mA

I = 40 mA

Forward voltage matching

∆ V

I = 10 mA

AC Characteristics

Diode capacitance

V = 0 , f = 1 MHz

Differential forward resistance

Ω

I = 10 mA, f = 10 kHz

100 ps

Charge carrier life time

I = 25 mA

¹∆V is the difference between lowest and highestV in a multiple diode component.

2006-08-04

BAS40...B5000 / B5003

Diode capacitance C = ƒ (V )

Forward resistance r = ƒ (I )

f F

f = 1MHz

BAS 40...

EHB00040

BAS 40...

EHB00041

10 ³

C_T

r_f

Ω

10 ²

10 ¹

10 ³

mA 100

0.1

V_R

Ι _F

Reverse current I = ƒ (T )

Reverse current I = ƒ(V )

R R

V = Parameter

T = Parameter

10 ^-4

BAS 40...

EHB00039

10³

Ι _R

µ A

T_A= 150 C

10²

10¹

10⁰

10^-1

10 ^-5

10 ^-6

10 ^-7

10 ^-8

85 C

VR = 40V

30V

20V

10V

25 C

10^-2

°C

100

150

V_R

2006-08-04

BAS40...B5000 / B5003

Forward Voltage V = ƒ (T )

Forward current I = ƒ (V )

F F

I = Parameter

BAS 40...

EHB00038

10 ²

0.8

Ι_F

10 ¹

10 ⁰

10^-1

10^-2

0.6

0.5

0.4

0.3

0.2

0.1

IF = 40 mA

10 mA

1 mA

0.1 mA

10 µA

T_A= -40 ˚C

25 ˚C

1 µA

85 ˚C

150 ˚C

°C

-50 -25

100

150

0.0

0.5

1.0

1.5

V_F

Forward current I = ƒ (T )

BAS40B500X

BAS40-04 / -06B500X

BAS40Exxxx (e.g. E6327)

BAS40-04/-06Exxxx (e.g. E6327)

140

100

BAS40B500x

BAS40Exxxx

BAS40-04/-06B500x

BAS40-04/-06Exxxx

°C

15 30 45 60 75 90 105 120

150

15 30 45 60 75 90 105 120

150

2006-08-04

BAS40...B5000 / B5003

Forward current I = ƒ (T )

BAS40-05B500X

BAS40-05Exxxx (e.g. E6327)

140

100

BAS40-05B500x

BAS40-05Exxxx

°C

15 30 45 60 75 90 105 120

150

2006-08-04

Package SOT23

BAS40...B5000 / B5003

Package Outline

±0.1

0.1 MAX.

±0.1

2.9

+0.1

-0.05

0.4

0.08...0.15

0.95

0...8˚

1.9

0.25 B C

1) Lead width can be 0.6 max. in dambar area

0.2

Foot Print

0.8

1.2

Marking Layout (Example)

Manufacturer

2005, June

Date code (YM)

Pin 1

BCW66

Type code

Standard Packing

Reel ø180 mm = 3.000 Pieces/Reel

Reel ø330 mm = 10.000 Pieces/Reel

0.2

0.9

1.15

3.15

Pin 1

2006-08-04

BAS40...B5000 / B5003

Edition 2006-02-01

Published by

Infineon Technologies AG

81726 München, Germany

Attention please!

The information given in this dokument shall in no event be regarded as a guarantee

of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any

examples or hints given herein, any typical values stated herein and/or any information

regarding the application of the device, Infineon Technologies hereby disclaims any

and all warranties and liabilities of any kind, including without limitation warranties of

non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices

please contact your nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements components may contain dangerous substances.

For information on the types in question please contact your nearest

Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or

systems with the express written approval of Infineon Technologies, if a failure of

such components can reasonably be expected to cause the failure of that

life-support device or system, or to affect the safety or effectiveness of that

device or system.

Life support devices or systems are intended to be implanted in the human body,

or to support and/or maintain and sustain and/or protect human life. If they fail,

it is reasonable to assume that the health of the user or other persons

may be endangered.

2006-08-04

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