BAS70-06 [INFINEON]
Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing); 硅肖特基二极管（通用二极管，高速开关电路保护电压钳位高级检测和混合）
| 型号： | BAS70-06 |
| 厂家： | 
Infineon |
| 描述： | Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) |
| 文件： | 总5页 (文件大小：112K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Silicon Schottky Diodes
BAS 70 …
● General-purpose diodes for high-speed switching
● Circuit protection
● Voltage clamping
● High-level detecting and mixing
Available with CECC quality assessment
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Package1)
Type
Marking
Ordering Code Pin Configuration
(tape and reel)
73s
Q62702-A118
SOT-23
BAS 70
74s
75s
76s
Q62702-A730
BAS 70-04
BAS 70-05
BAS 70-06
Q62702-A711
Q62702-A774
1)
For detailed information see chapter Package Outlines.
01.97
Semiconductor Group
1
BAS 70 …
● General-purpose diodes for high-speed switching
● Circuit protection
● Voltage clamping
● High-level detecting and mixing
Available with CECC quality assessment
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Package1)
Type
Marking
Ordering Code Pin Configuration
(tape and reel)
77s
Q62702-A846
SOT-143
BAS 70-07
Maximum Ratings per Diode
Parameter
Symbol
Values
70
Unit
V
Reverse voltage
V
R
Forward current
IF
70
mA
Surge forward current, t ≤ 10 ms
Total power dissipation
BAS 70
BAS 70-04 … TS ≤ 40 ˚C2)
I
FSM
100
250
P
tot
mW
˚C
T
S ≤ 66 ˚C2)
Junction temperature
T
T
T
j
150
Operating temperature range
Storage temperature range
op
– 55 … + 150
– 55 … + 150
stg
Thermal Resistance
Junction - ambient3)
BAS 70
BAS 70-04 …
R
R
th JA
th JS
K/W
≤ 405
≤ 575
Junction - soldering point
BAS 70
BAS 70-04 …
≤ 335
≤ 435
1)
For detailed information see chapter Package Outlines.
Max. 450 mW per package.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
2)
3)
Semiconductor Group
2
BAS 70 …
Electrical Characteristics per Diode
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Breakdown voltage
V(BR)
70
–
–
V
IR
= 10 µA
Reverse current
IR
µA
V
V
R
R
= 50 V
= 70 V
–
–
–
–
0.1
10
Forward voltage
VF
mV
IF
IF
IF
= 1 mA
= 10 mA
= 15 mA
–
–
–
375
705
880
410
750
1000
Diode capacitance
= 0, f = 1 MHz
C
T
–
–
–
1.6
2
pF
ps
Ω
VR
Charge carrier life time
= 25 mA
τ
–
100
–
IF
Differential forward resistance
= 10 mA, f = 10 kHz
rf
30
IF
Semiconductor Group
3
BAS 70 …
Characteristics per Diode at T
j
= 25 ˚C, unless otherwise specified.
Reverse current I = f (V )
Forward current I = f (V
F
F
)
R
R
Diode capacitance C
f= 1 MHz
T
= f (V
R)
Differential forward resistance r
f= 10 kHz
f
= f (I )
F
Semiconductor Group
4
BAS 70 …
Forward current I
F
= f (T
A
*; T )
S
* Package mounted on epoxy
Semiconductor Group
5
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