BAS70-06-GS18 [VISHAY]

Rectifier Diode, Schottky, 2 Element, 0.2A, 70V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3;
BAS70-06-GS18
型号: BAS70-06-GS18
厂家: VISHAY    VISHAY
描述:

Rectifier Diode, Schottky, 2 Element, 0.2A, 70V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC PACKAGE-3

光电二极管
文件: 总5页 (文件大小:102K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BAS70-00 to BAS70-06  
Vishay Semiconductors  
Small Signal Schottky Diodes, Single & Dual  
Features  
• These diodes feature very low turn-on  
voltage and fast switching  
• These devices are protected by a PN  
junction guard ring against excessive volt-  
age, such as electrostatic discharges  
e3  
BAS70-00  
BAS70-04  
3
3
• Lead (Pb)-free component  
Top View  
Top View  
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
1
2
1
2
BAS70-05  
BAS70-06  
3
3
Mechanical Data  
Case: SOT-23 Plastic case  
Weight: approx. 8.8 mg  
Packaging Codes/Options:  
1
2
1
2
18439  
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box  
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box  
Parts Table  
Part  
Ordering code  
BAS70-00-GS18 or BAS70-00-GS08  
BAS70-04-GS18 or BAS70-04-GS08  
BAS70-05-GS18 or BAS70-05-GS08  
BAS70-06-GS18 or BAS70-06-GS08  
Type Marking  
Remarks  
BAS70-00  
BAS70-04  
BAS70-05  
BAS70-06  
73  
Tape and Reel  
74  
75  
76  
Tape and Reel  
Tape and Reel  
Tape and Reel  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
Value  
Unit  
Repetitive peak reverse voltage  
VRRM = VRWM = VR  
70  
V
2001)  
6001)  
2001)  
Forward continuous current  
Surge forward current  
T
amb = 25 °C  
IF  
mA  
mA  
mW  
tp < 1 s, Tamb = 25 °C  
Tamb = 25 °C  
IFSM  
Ptot  
Power dissipation1)  
1) Device on fiberglass substrate, see layout on next page  
Thermal Characteristics  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
Value  
Unit  
4301)  
125  
Thermal resistance junction to ambient air  
RthJA  
Tj  
K/W  
°C  
Junction temperature  
Storage temperature range  
Tstg  
- 65 to + 125  
°C  
1) Device on fiberglass substrate, see layout on next page  
Document Number 85702  
Rev. 1.6, 12-Dec-05  
www.vishay.com  
1
BAS70-00 to BAS70-06  
Vishay Semiconductors  
Electrical Characteristics  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
IR = 10 μA (pulsed)  
R = 50 V  
Symbol  
V(BR)  
Min  
70  
Typ.  
20  
Max  
Unit  
V
Reverse breakdown voltage  
Leakage current  
Forward voltage  
V
IR  
VF  
VF  
Ctot  
trr  
100  
410  
1000  
2
nA  
mV  
mV  
pF  
IF = 1.0 mA  
IF = 15 mA,  
Forward voltage1)  
Diode capacitance  
V
R = 0 V, f = 1 MHz  
1.5  
Reverse recovery time  
IF = 10 mA, IR = 10 mA,  
5
ns  
Irr = 1 mA, RL = 100 Ω  
1) Pulse test; tp 300 μs  
Layout for R  
test  
thJA  
Thickness:  
Fiberglass 1.5 mm (0.059 in.)  
Copper leads 0.3 mm (0.012 in.)  
7.5 (0.3)  
3 (0.12)  
1 (0.4)  
2 (0.8)  
2 (0.8)  
1 (0.4)  
12 (0.47)  
0.8 (0.03)  
15 (0.59)  
5 (0.2)  
1.5 (0.06)  
5.1 (0.2)  
17451  
www.vishay.com  
2
Document Number 85702  
Rev. 1.6, 12-Dec-05  
BAS70-00 to BAS70-06  
Vishay Semiconductors  
Package Dimensions in mm (Inches)  
0.175 (.007)  
0.098 (.005)  
0.1 (.004) max.  
2.6 (.102)  
2.35 (.092)  
0.4 (.016)  
0.4 (.016)  
ISO Method E  
3.1 (.122)  
Mounting Pad Layout  
2.8 (.110)  
0.4 (.016)  
0.52 (0.020)  
0.9 (0.035)  
2.0 (0.079)  
0.95 (.037)  
0.95 (.037)  
0.95 (0.037)  
0.95 (0.037)  
17418  
Document Number 85702  
Rev. 1.6, 12-Dec-05  
www.vishay.com  
3
BAS70-00 to BAS70-06  
Vishay Semiconductors  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and operating  
systems with respect to their impact on the health and safety of our employees and the public, as well as  
their impact on the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are  
known as ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs  
and forbid their use within the next ten years. Various national and international initiatives are pressing for an  
earlier ban on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use  
of ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments  
respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design  
and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each  
customer application by the customer. Should the buyer use Vishay Semiconductors products for any  
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all  
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal  
damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
www.vishay.com  
4
Document Number 85702  
Rev. 1.6, 12-Dec-05  
Legal Disclaimer Notice  
Vishay  
Notice  
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,  
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.  
Information contained herein is intended to provide a product description only. No license, express or implied, by  
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's  
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express  
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness  
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.  
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.  
Customers using or selling these products for use in such applications do so at their own risk and agree to fully  
indemnify Vishay for any damages resulting from such improper use or sale.  
Document Number: 91000  
Revision: 08-Apr-05  
www.vishay.com  
1

相关型号:

BAS70-06-HE3-08

DIODE ARRAY SCHOTTKY 70V SOT23
VISHAY

BAS70-06-HE3-18

DIODE ARRAY SCHOTTKY 70V SOT23
VISHAY

BAS70-06-HT3

Schottky Diodes
VISHAY

BAS70-06-HT3-GS08

Schottky Diodes
VISHAY

BAS70-06-Q

General-purpose dual Schottky diodeProduction
NEXPERIA

BAS70-06-TP

Surface Mount Schottky Barrier Diode 200 mWatt
MCC

BAS70-06-TP-HF

Rectifier Diode, Schottky, 2 Element, 0.07A, 70V V(RRM), Silicon,
MCC

BAS70-06-V

Small Signal Schottky Diodes, Single & Dual
VISHAY

BAS70-06-V-GS08

Small Signal Schottky Diodes, Single & Dual
VISHAY

BAS70-06-V-GS18

Small Signal Schottky Diodes, Single & Dual
VISHAY

BAS70-06/G,215

BAS70 series; 1PS7xSB70 series - General-purpose Schottky diodes TO-236 3-Pin
NXP

BAS70-06/T1

DIODE SCHOTTKY DUAL
ETC