BAS70W [INFINEON]
Silicon Schottky Diode (General-purpose diodes for high-speed switching Circuit protection Voltage clamping); 硅肖特基二极管(通用二极管,高速开关电路保护电压钳位)型号: | BAS70W |
厂家: | Infineon |
描述: | Silicon Schottky Diode (General-purpose diodes for high-speed switching Circuit protection Voltage clamping) |
文件: | 总4页 (文件大小:176K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BAS 70W
Silicon Schottky Diode
● General-purpose diodes for
high-speed switching
● Circuit protection
● Voltage clamping
● High-level detection and mixing
Type
Ordering Code
(tape and reel)
Pin Configuration
Marking
Package1)
1
2
3
BAS 70-04W Q62702-A1068
BAS 70-05W Q62702-A1069
BAS 70-06W Q62702-A1070
A1
A1
C1
C2
A2
C2
C1/A2 74s
C1/C2 75s
A1/A2 76s
SOT-323
Maximum Ratings
Parameter
Symbol
VR
Values
Unit
V
Reverse voltage
70
Forward current
IF
70
mA
mA
mW
°C
Surge forward current, t ≤ 10 ms
Total power dissipation TS ≤ 91 °C
Operating temperature range
Storage temperature range
Thermal Resistance
IFSM
Ptot
100
250
Top
– 55 … + 150
– 55 … + 150
°C
Tstg
Junction-ambient1)
Rth JA
Rth JS
≤ 455
≤ 235
K/W
K/W
Junction-soldering point
1) Package mounted on an epoxy pcb 40 mm x 40 mm x 1.5 mm/1cm2 Cu.
Semiconductor Group
1
10.94
BAS 70W
Electrical Characteristics
at TA = 25 °C, unless otherwise specified.
Parameter
Symbol
Value
typ.
Unit
min.
max.
DC Characteristics
Breakdown voltage
V(BR)
VF
V
I
(BR) = 10 µA
70
–
–
Forward voltage
IF = 1 mA
IF = 10 mA
IF = 15 mA
mV
300
600
750
375
705
880
410
750
1000
Reverse current
VR = 50 V
VR = 70 V
IR
µA
–
–
–
–
0.1
10
Diode capacitance
VR = 0 V, f = 1 MHz
CT
τ
pF
ps
Ω
–
–
1.5
–
2
Charge carrier life time
IF = 25 mA
100
Differential forward resistance
rf
IF = 10 mA, f = 10 kHz
–
–
34
2
–
–
Series inductance
LS
nH
Semiconductor Group
2
BAS 70W
Forward current IF = f (VF)
Reverse current IR = f (VR)
Diode capacitance CT = f (VR)
Differential forward resistance RF = f (IF)
Semiconductor Group
3
BAS 70W
Permissible Pulse load IF = f (TA; TS*)
Permissible load RthJS = f (tp)
* Package mounted on epoxy
Permissible Pulse load IFmax / IFDC = f (tp)
Semiconductor Group
4
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