BAT114-099 [INFINEON]
Silicon Dual Schottky Diode (High barrier diode for balanced mixers, phase detectors and modulators); 硅双肖特基二极管（高垒二极管平衡混频器，相位检波器和调制器）
| 型号： | BAT114-099 |
| 厂家： | 
Infineon |
| 描述： | Silicon Dual Schottky Diode (High barrier diode for balanced mixers, phase detectors and modulators) |
| 文件： | 总3页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Silicon Dual Schottky Diode
BAT 114-099
Features
• High barrier diode for balanced mixers, phase
detectors and modulators
ESD: ElectroStatic Discharge sensitive device, observe handling precautions!
1)
Type
Marking Ordering Code Pin Configuration
(taped & reel)
Package
BAT 114-099
S7
Q62702-A1017
SOT-143
1)
Dimensions see chapter Package Outlines
Maximum Ratings
(per diode)
Parameter
Symbol
VR
Limit Values Unit
Reverse voltage
4
V
Forward current
IF
90
mA
°C
Operation temperature
Storage temperature
Power dissipation, TS ≤ 70 °C
Top
− 55 to + 150
− 55 to + 150
100
Tstg
°C
Ptot
mW
Semiconductor Group
326
01.97
BAT 114-099
Thermal Resistance
(per diode)
Parameter
Symbol
RthJS
Limit Values
Unit
K/W
K/W
Junction to soldering point
≤ 780
1)
Junction to ambient
RthJA
≤ 1020
1)
Mounted on alumina 15 mm × 16.7 mm to 0.7 mm
Electrical Characteristics
(per diode; TA = 25 °C)
Parameter
Symbol
Limit Values
min. typ. max.
Unit
Breakdown voltage
IR = 5 µA
VBR
VF
V
V
4
−
−
Forward voltage
IF = 1 mA
IF = 10 mA
−
−
0.6
0.7
0.7
0.8
1)
Forward voltage matching
IF = 10 mA
∆VF
CT
mV
pF
Ω
−
−
−
−
10
Diode capacitance
VR = 0 V, f = 1 MHz
0.25 0.5
5.5
Forward resistance
IF = 10 mA / 50 mA
RF
−
1)
∆VF is difference between lowest and highest VF in component.
Semiconductor Group
327
BAT 114-099
Forward Current IF = f(VF)
Semiconductor Group
328
相关型号：
BAT114-099R
Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers, phase detectors and modulators)
INFINEON
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