BAW79DH6327XTSA1

更新时间:2024-09-19 00:19:08
品牌:INFINEON
描述:Rectifier Diode, 2 Element, 1A, 400V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3

BAW79DH6327XTSA1 概述

Rectifier Diode, 2 Element, 1A, 400V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3

BAW79DH6327XTSA1 数据手册

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BAW78.../BAW79...  
Silicon Switching Diodes  
Switching applications  
High breakdown voltage  
1)  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
BAW78D  
BAW79D  
2
2
1
2
3
1
2
3
Type  
Package  
Configuration  
Marking  
BAW78D  
BAW79D  
SOT89  
SOT89  
single  
GD  
GH  
common cathode  
Maximum Ratings at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Value  
400  
400  
1
Unit  
V
Diode reverse voltage  
Peak reverse voltage  
Forward current  
V
V
R
RM  
A
I
I
I
I
I
F
1
Peak forward current  
FM  
FM  
FS  
Peak forward current  
1
10  
-
Surge forward current, t = 1 µs  
Non-repetitive peak surge forward current  
Total power dissipation  
FSM  
W
P
tot  
BAW78D, T 125°C  
1
1
S
BAW79D, T 115°C  
S
150  
°C  
Junction temperature  
Storage temperature  
T
T
j
-65 ... 150  
stg  
1Pb-containing package may be available upon special request  
2007-04-20  
1
BAW78.../BAW79...  
Thermal Resistance  
Parameter  
Symbol  
Value  
Unit  
1)  
K/W  
Junction - soldering point  
BAW78D  
R
thJS  
25  
35  
BAW79D  
Electrical Characteristics at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Values  
Unit  
min.  
typ. max.  
DC Characteristics  
400  
-
-
V
Breakdown voltage  
V
(BR)  
I
= 100 µA  
(BR)  
Reverse current  
V = 400 V  
I
-
-
-
-
µA  
R
1
R
V = 400 V, T = 150 °C  
50  
R
A
V
Forward voltage  
I = 1 A  
V
F
-
-
-
-
1.6  
2
F
I = 2 A  
F
AC Characteristics  
-
-
10  
1
-
-
pF  
µs  
Diode capacitance  
C
T
V = 0 V, f = 1 MHz  
R
Reverse recovery time  
t
rr  
I = 200mA, I = 200mA, measured at I = 20mA  
,
F
R
R
R = 100  
L
Test circuit for reverse recovery time  
D.U.T.  
Puls generator: t = 10µs, D = 0.05,  
p
t = 0.6ns, R = 50Ω  
r
i
Oscillograph  
ΙF  
Oscillograp: R = 50, t = 0.35ns  
r
C 1pF  
EHN00019  
1For calculation of R  
please refer to Application Note Thermal Resistance  
thJA  
2007-04-20  
2
BAW78.../BAW79...  
Reverse current I = ƒ (T )  
Forward current I = ƒ (V )  
F F  
R
A
V = 400V  
T = 25°C  
A
R
BAW 78A...D  
EHB00095  
BAW 78A...D  
EHB00097  
101  
A
10 5  
nA  
Ι F  
Ι R  
max  
typ.  
10 4  
5
100  
10 3  
5
10-1  
10 2  
5
10-2  
10 1  
10-3  
0
50  
100  
150  
˚C  
0
1
V
2
TA  
VF  
Peak forward current I = ƒ (t )  
Forward current I = ƒ (T )  
F S  
FM  
p
BAW78D  
BAW 79A...D  
EHB00100  
10 2  
A
1200  
mA  
D = 0.005  
Ι FM  
0.01  
0.02  
0.05  
0.1  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
10 1  
10 0  
10-1  
10-2  
0.2  
tp  
tp  
D =  
T
T
0
0
°C  
15 30 45 60 75 90 105 120  
150  
10-6  
10-5  
10-4  
10-3  
10-2  
10-1 s 100  
T
S
t
2007-04-20  
3
BAW78.../BAW79...  
Forward current I = ƒ (T )  
F
S
BAW79D  
1200  
mA  
1000  
900  
800  
700  
600  
500  
400  
300  
200  
100  
0
0
°C  
15 30 45 60 75 90 105 120  
150  
T
S
2007-04-20  
4
Package SOT89  
BAW78.../BAW79...  
Package Outline  
±0.1  
4.5  
B
±0.1  
1.5  
45˚  
0.25  
0.2 MAX.1)  
±0.05  
±0.2  
1.6  
0.15  
1
2
3
1.5  
±0.1  
0.35  
+0.2  
-0.1  
0.45  
M
0.15  
B
x3  
3
0.2  
B
1) Ejector pin markings possible  
Foot Print  
2.0  
0.8  
0.8  
0.7  
Marking Layout (Example)  
BAW78D  
Type code  
Pin 1  
2005, June  
Date code (YM)  
Manufacturer  
Standard Packing  
Reel ø180 mm = 1.000 Pieces/Reel  
Reel ø330 mm = 4.000 Pieces/Reel  
0.2  
8
Pin 1  
1.6  
4.3  
2007-04-20  
5
BAW78.../BAW79...  
Edition 2006-02-01  
Published by  
Infineon Technologies AG  
81726 München, Germany  
© Infineon Technologies AG 2007.  
All Rights Reserved.  
Attention please!  
The information given in this dokument shall in no event be regarded as a guarantee  
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any  
examples or hints given herein, any typical values stated herein and/or any information  
regarding the application of the device, Infineon Technologies hereby disclaims any  
and all warranties and liabilities of any kind, including without limitation warranties of  
non-infringement of intellectual property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices  
please contact your nearest Infineon Technologies Office (www.infineon.com).  
Warnings  
Due to technical requirements components may contain dangerous substances.  
For information on the types in question please contact your nearest  
Infineon Technologies Office.  
Infineon Technologies Components may only be used in life-support devices or  
systems with the express written approval of Infineon Technologies, if a failure of  
such components can reasonably be expected to cause the failure of that  
life-support device or system, or to affect the safety or effectiveness of that  
device or system.  
Life support devices or systems are intended to be implanted in the human body,  
or to support and/or maintain and sustain and/or protect human life. If they fail,  
it is reasonable to assume that the health of the user or other persons  
may be endangered.  
2007-04-20  
6

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