BAWH56WT1G [ONSEMI]
70V Common Anode Switching Diode, +175°C;型号: | BAWH56WT1G |
厂家: | ONSEMI |
描述: | 70V Common Anode Switching Diode, +175°C |
文件: | 总5页 (文件大小:210K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BAWH56W, NSVBAWH56W
Dual Switching Diode,
Common Anode
Features
• 175°C T
− Rated for High Temperature, Mission Critical
J(MAX)
Applications
www.onsemi.com
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
SC−70
CASE 419
STYLE 4
CATHODE
1
MAXIMUM RATINGS (TA = 25°C)
ANODE
3
Rating
Symbol
Max
70
Unit
V
2
Reverse Voltage
Forward Current
V
R
CATHODE
I
F
200
2.0
mA
A
Non−Repetitive Peak Surge Current
(surge applied at rated load conditions,
half wave, single pulse, 60 Hz)
I
FSM
MARKING DIAGRAM
Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
CH M G
G
THERMAL CHARACTERISTICS (T = 25°C)
1
A
Characteristic
Symbol
Max
Unit
CH = Device Code
M
G
= Date Code*
= Pb−Free Package
Total Device Dissipation FR−5 Board
P
200
mW
D
(Note 1)
T = 25°C
A
(Note: Microdot may be in either location)
Derate above 25°C
1.1
mW/°C
°C/W
*Date Code orientation may vary depending
upon manufacturing location.
Thermal Resistance, Junction−to−Ambient
(Note 1)
R
615
ꢀ
JA
Total Device Dissipation
P
300
mW
D
ORDERING INFORMATION
Alumina Substrate (Note 2) T = 25°C
A
Derate above 25°C
1.6
mW/°C
°C/W
†
Device
Package
Shipping
Thermal Resistance, Junction−to−Ambient
(Note 2)
R
417
ꢀ
JA
SC−70
(Pb−Free)
3,000 / Tape &
Reel
BAWH56WT1G
Junction and Storage Temperature
T , T
−55 to
+175
°C
J
stg
SC−70
(Pb−Free)
3,000 / Tape &
Reel
NSVBAWH56WT1G
1. FR−5 = 1.0 ꢀ 0.75 ꢀ 0.062 in.
2. Alumina = 0.4 ꢀ 0.3 ꢀ 0.024 in. 99.5% alumina.
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2018
Publication Order Number:
1
June, 2019 − Rev. 4
BAWH56W/D
BAWH56W, NSVBAWH56W
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage
V
(BR)
V
(I
= 100 ꢁ A)
70
−
(BR)
Reverse Voltage Leakage Current
(V = 25 V, T = 175°C)
I
R
ꢁ
A
−
−
−
30
2.5
50
R
J
(V = 70 V)
R
(V = 70 V, T = 175°C)
R
J
Diode Capacitance
C
V
pF
D
(V = 0, f = 1.0 MHz)
−
2.0
R
Forward Voltage
mV
F
(I = 1.0 mA)
−
−
−
−
715
855
1000
1250
F
(I = 10 mA)
F
(I = 50 mA)
F
(I = 150 mA)
F
Reverse Recovery Time
t
rr
ns
(I = I = 10 mA, R = 100 ꢂ, I = 1.0 mA) (Figure 1)
−
6.0
F
R
L
R(REC)
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
820
ꢂ
I
F
+10 V
t
r
t
p
t
2.0 k
0.1 ꢁ F
I
F
t
t
100 ꢁ H
rr
10%
90%
0.1 ꢁ F
DUT
i
= 1.0 mA
R(REC)
50 ꢂ OUTPUT
PULSE
50 ꢂ INPUT
SAMPLING
I
R
V
R
OUTPUT PULSE
(I = I = 10 mA; MEASURED
GENERATOR
OSCILLOSCOPE
INPUT SIGNAL
F
R
at i
= 1.0 mA)
R(REC)
Notes: 1. A 2.0 kꢂ variable resistor adjusted for a Forward Current (I ) of 10 mA.
F
Notes: 2. Input pulse is adjusted so I
is equal to 10 mA.
R(peak)
Notes: 3. t » t
p
rr
Figure 1. Recovery Time Equivalent Test Circuit
www.onsemi.com
2
BAWH56W, NSVBAWH56W
TYPICAL CHARACTERISTICS
100
10
200
20
175°C
125°C
175°C
1.0
125°C
85°C
85°C
0.1
2.0
0.2
0.01
25°C
0.001
25°C
-55°C
0.0001
50
60
70
80
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
30
40
V , FORWARD VOLTAGE (VOLTS)
F
V , REVERSE VOLTAGE (VOLTS)
R
Figure 2. Forward Voltage
Figure 3. Leakage Current
1.6
1.4
1.2
1.0
0.8
0.6
T = 25°C
A
f = 1 MHz
0.4
0
2
4
6
8
10
V , REVERSE VOLTAGE (V)
R
Figure 4. Capacitance
www.onsemi.com
3
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419
ISSUE R
DATE 11 OCT 2022
SCALE 4:1
GENERIC
MARKING DIAGRAM
XX MG
G
1
XX
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLE 1:
STYLE 2:
PIN 1. ANODE
2. N.C.
3. CATHODE
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 4:
STYLE 5:
PIN 1. ANODE
2. ANODE
3. CATHODE
CANCELLED
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 6:
STYLE 7:
PIN 1. BASE
STYLE 8:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 9:
STYLE 10:
STYLE 11:
PIN 1. EMITTER
PIN 1. ANODE
PIN 1. CATHODE
2. ANODE
PIN 1. CATHODE
2. CATHODE
2. BASE
2. EMITTER
2. CATHODE
3. COLLECTOR
3. COLLECTOR
3. CATHODE-ANODE
3. ANODE-CATHODE
3. CATHODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42819B
SC−70 (SOT−323)
PAGE 1 OF 1
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are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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ADDITIONAL INFORMATION
TECHNICAL PUBLICATIONS:
Technical Library: www.onsemi.com/design/resources/technical−documentation
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