BB535 [INFINEON]
Silicon Variable Capacitance Diode (For UHF and TV/TR tuners Large capacitance ratio, low series resistance); 硅变容二极管（用于UHF和TV / TR调谐器，大容量比，低串联电阻）
| 型号： | BB535 |
| 厂家： | 
Infineon |
| 描述： | Silicon Variable Capacitance Diode (For UHF and TV/TR tuners Large capacitance ratio, low series resistance) |
| 文件： | 总4页 (文件大小：28K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BB 535
Silicon Variable Capacitance Diode
• For UHF and TV/TR tuners
• Large capacitance ratio, low series resistance
Type
Marking Ordering Code Pin Configuration
white S Q62702-B580 1 = C 2 = A
Package
BB 535
SOD-323
Maximum Ratings
Parameter
Symbol
Values
Unit
Diode reverse voltage
Peak reverse voltage (R ≥ 5kΩ)
Forward current
V
V
30
V
R
35
RM
I
20
mA
°C
F
Operating temperature range
Storage temperature
T
T
- 55 ... + 125
- 55 ... + 150
op
stg
Thermal Resistance
Junction - ambient
R
thJA
≤ 450
K/W
Semiconductor Group
1
Jan-08-1997
BB 535
Electrical Characteristics at T =25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Reverse current
I
nA
R
V = 30 V, T = 25 °C
-
-
-
-
10
R
A
V = 30 V, T = 85 °C
200
R
A
AC characteristics
Diode capacitance
C
T
pF
V = 1 V, f = 1 MHz
17.5
14.01
2.05
1.9
18.7
15
20
R
V = 2 V, f = 1 MHz
R
16.1
2.4
2.3
V = 25 V, f = 1 MHz
R
2.24
2.1
V = 28 V, f = 1 MHz
R
Capacitance ratio
C /C
T2 T25
-
V = 2 V, V = 25 V, f = 1 MHz
6
8.2
-
6.7
8.9
-
7.5
9.8
2.5
R
R
Capacitance ratio
V = 1 V, V = 28 V, f = 1 MHz
C /C
T1 T28
R
R
∆
Capacitance matching
C /C
%
T
T
V = 1 ... 28 V, f = 1 MHz
R
Series resistance
r
Ω
s
V = 3 V, f = 470 MHz
-
-
0.55
2
0.65
-
R
Series inductance
L
nH
s
Semiconductor Group
2
Jan-08-1997
BB 535
Diode capacitance C = f (V )
Temperature coefficient of the diode
capacitance T = f (V )
T
R
f = 1MHz
Cc
R
f = 1MHz
10 -1
20
pF
1/°C
16
CT
TCc
10 -2
14
12
10
8
10 -3
6
10 -4
4
2
0
0
10 -5
10 0
5
10
15
20
V
30
10 1
V
VR
VR
Normalized diode capacitance
/ C = f (T )
Reverse current I = f (T )
R
A
C
V = 28V
(TA)
(25°C)
A
R
f = 1MHz, V = Parameter
R
10 3
1.06
pA
-
CTA/C25
IR
1V
10 2
2V
1.02
1.00
25V
10 1
0.98
0.96
10 0
-10
-30
-10
10
30
50
70
°C
TA
110
10
30
50
70
°C
TA
100
Semiconductor Group
3
Jan-08-1997
BB 535
Reverse current I = f (V )
R
R
T = Parameter
A
10 3
pA
85°C
25°C
IR
10 2
10 1
10 0
10 -1
10 0
10 1
V
VR
Semiconductor Group
4
Jan-08-1997
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