BB857 [INFINEON]

Silicon Tuning Diode (For SAT-indoor-units High capacitance ratio Low series inductance); 硅调谐二极管(对于SAT-室内机组高电容比低的串联电感)
BB857
型号: BB857
厂家: Infineon    Infineon
描述:

Silicon Tuning Diode (For SAT-indoor-units High capacitance ratio Low series inductance)
硅调谐二极管(对于SAT-室内机组高电容比低的串联电感)

二极管
文件: 总3页 (文件大小:17K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BB 857  
Silicon Tuning Diode  
For SAT-indoor-units  
High capacitance ratio  
2
Low series inductance  
Low series resistance  
Extremely small plastic SMD package  
Excellent uniformity and matching due to  
"in-line" matching assembly procedure  
1
VES05991  
Type  
Marking Ordering Code  
Pin ConfigurationPackage  
BB 857  
BB 857  
O
O
Q62702-B0897 unmatched  
1 = C  
2 = A  
SCD-80  
Q62702-B0893 inline matched  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
Diode reverse voltage  
Peak reverse voltage (R 5k)  
Forward current  
V
V
30  
35  
20  
V
R
RM  
I
mA  
F
Operating temperature range  
Storage temperature  
T
T
-55 ...+150  
°C  
op  
-55 ...+150  
stg  
Semiconductor Group  
Semiconductor Group  
1
Mar-27-1998  
1998-11-01  
1
BB 857  
Electrical Characteristics at T = 25°C, unless otherwise specified.  
A
Parameter  
Symbol  
Values  
Unit  
min.  
typ. max.  
DC characteristics  
nA  
Reverse current  
I
I
-
-
-
-
10  
R
R
V = 30 V  
R
200  
Reverse current  
V = 30 V, T = 85 °C  
R
A
AC characteristics  
Diode capacitance  
pF  
C
T
V = 1 V, f = 1 MHz  
6
-
6.6  
7.2  
-
R
V = 25 V, f = 1 MHz  
0.55  
0.54  
R
V = 28 V, f = 1 MHz  
0.45  
0.65  
R
-
9.7  
-
12  
12.2  
-
-
-
Capacitance ratio  
C /C  
T1 T25  
V = 1 V, V = 25 V, f = 1 MHz  
R
R
Capacitance ratio  
V = 1 V, V = 28 V, f = 1 MHz  
-
C /C  
T1 T28  
R
R
1)  
Capacitance ratio  
V = 1 V, V = 28 V, f = 1 MHz  
5
-
%
C /C  
T
T
R
R
Series resistance  
-
1.5  
0.6  
r
s
V = 5 V, f = 470 MHz  
R
Series inductance  
-
-
nH  
L
s
1) In-line matching. For details please refer to Application Note 047  
Semiconductor Group  
Semiconductor Group  
2
Mar-27-1998  
1998-11-01  
2
BB 857  
Diode capacitance C = f (V )  
T
R
f = 1MHz  
10  
pF  
8
C
T
7
6
5
4
3
2
1
0
10 0  
10 1  
V
V
R
Semiconductor Group  
Semiconductor Group  
3
Mar-27-1998  
1998-11-01  
3

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