BB857 [INFINEON]
Silicon Tuning Diode (For SAT-indoor-units High capacitance ratio Low series inductance); 硅调谐二极管(对于SAT-室内机组高电容比低的串联电感)![BB857](http://pdffile.icpdf.com/pdf1/p00045/img/icpdf/BB857_234766_icpdf.jpg)
型号: | BB857 |
厂家: | ![]() |
描述: | Silicon Tuning Diode (For SAT-indoor-units High capacitance ratio Low series inductance) |
文件: | 总3页 (文件大小:17K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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BB 857
Silicon Tuning Diode
• For SAT-indoor-units
• High capacitance ratio
2
• Low series inductance
• Low series resistance
• Extremely small plastic SMD package
• Excellent uniformity and matching due to
"in-line" matching assembly procedure
1
VES05991
Type
Marking Ordering Code
Pin ConfigurationPackage
BB 857
BB 857
O
O
Q62702-B0897 unmatched
1 = C
2 = A
SCD-80
Q62702-B0893 inline matched
Maximum Ratings
Parameter
Symbol
Value
Unit
Diode reverse voltage
Peak reverse voltage (R ≥ 5kΩ)
Forward current
V
V
30
35
20
V
R
RM
I
mA
F
Operating temperature range
Storage temperature
T
T
-55 ...+150
°C
op
-55 ...+150
stg
Semiconductor Group
Semiconductor Group
1
Mar-27-1998
1998-11-01
1
BB 857
Electrical Characteristics at T = 25°C, unless otherwise specified.
A
Parameter
Symbol
Values
Unit
min.
typ. max.
DC characteristics
nA
Reverse current
I
I
-
-
-
-
10
R
R
V = 30 V
R
200
Reverse current
V = 30 V, T = 85 °C
R
A
AC characteristics
Diode capacitance
pF
C
T
V = 1 V, f = 1 MHz
6
-
6.6
7.2
-
R
V = 25 V, f = 1 MHz
0.55
0.54
R
V = 28 V, f = 1 MHz
0.45
0.65
R
-
9.7
-
12
12.2
-
-
-
Capacitance ratio
C /C
T1 T25
V = 1 V, V = 25 V, f = 1 MHz
R
R
Capacitance ratio
V = 1 V, V = 28 V, f = 1 MHz
-
C /C
T1 T28
R
R
1)
Capacitance ratio
V = 1 V, V = 28 V, f = 1 MHz
5
-
%
∆C /C
T
T
R
R
Series resistance
-
1.5
0.6
r
Ω
s
V = 5 V, f = 470 MHz
R
Series inductance
-
-
nH
L
s
1) In-line matching. For details please refer to Application Note 047
Semiconductor Group
Semiconductor Group
2
Mar-27-1998
1998-11-01
2
BB 857
Diode capacitance C = f (V )
T
R
f = 1MHz
10
pF
8
C
T
7
6
5
4
3
2
1
0
10 0
10 1
V
V
R
Semiconductor Group
Semiconductor Group
3
Mar-27-1998
1998-11-01
3
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