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BC807-40 [INFINEON]

PNP Silicon AF Transistors (For general AF applications High collector current High current gain); PNP硅晶体管自动对焦（一般自动对焦的应用高集电极电流高电流增益）
BC807-40
型号： BC807-40
厂家： Infineon    Infineon
描述：

PNP Silicon AF Transistors (For general AF applications High collector current High current gain)
PNP硅晶体管自动对焦（一般自动对焦的应用高集电极电流高电流增益）

晶体 晶体管
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中文：  中文翻译
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PNP Silicon AF Transistors  
BC 807  
BC 808  
● For general AF applications  
● High collector current  
● High current gain  
● Low collector-emitter saturation voltage  
● Complementary types: BC 817, BC 818 (NPN)  
Package1)  
SOT-23  
Type  
Marking  
Ordering Code  
Pin Configuration  
1
2
3
BC 807-16  
BC 807-25  
BC 807-40  
BC 808-16  
BC 808-25  
BC 808-40  
5As  
5Bs  
5Cs  
5Es  
5Fs  
5Gs  
Q62702-C1735  
Q62702-C1689  
Q62702-C1721  
Q62702-C1736  
Q62702-C1504  
Q62702-C1692  
B
E
C
1)  
For detailed information see chapter Package Outlines.  
5.91  
Semiconductor Group  
1
BC 807  
BC 808  
Maximum Ratings  
Parameter  
Symbol  
Values  
BC 808  
Unit  
BC 807  
Collector-emitter voltage  
Collector-base voltage  
Emitter-base voltage  
Collector current  
V
V
V
CE0  
CB0  
EB0  
45  
50  
5
25  
30  
5
V
I
I
I
I
C
500  
mA  
A
Peak collector current  
Base current  
CM  
1
100  
B
mA  
Peak base current  
BM  
200  
Total power dissipation, T  
C
= 79 ˚C Ptot  
330  
mW  
˚C  
Junction temperature  
T
T
j
150  
Storage temperature range  
stg  
– 65 … + 150  
Thermal Resistance  
Junction - ambient1)  
R
th JA  
th JS  
≤ 285  
≤ 215  
K/W  
Junction - soldering point  
R
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.  
1)  
Semiconductor Group  
2
BC 807  
BC 808  
Electrical Characteristics  
at T = 25 ˚C, unless otherwise specified.  
A
Parameter  
Symbol  
Values  
typ.  
Unit  
min.  
max.  
DC characteristics  
Collector-emitter breakdown voltage  
IC = 10 mA  
V(BR)CE0  
V(BR)CB0  
V(BR)EB0  
V
BC 807  
BC 808  
45  
25  
–
–
–
–
Collector-base breakdown voltage  
= 100 µA  
IC  
BC 807  
BC 808  
50  
30  
–
–
–
–
Emitter-base breakdown voltage, I  
E
= 10 µA  
5
–
–
Collector cutoff current  
ICB0  
V
CB = 25 V  
–
–
–
–
100  
50  
nA  
µA  
V
CB = 25 V, T  
A
= 150 ˚C  
Emitter cutoff current, VEB = 4 V  
I
EB0  
–
–
100  
nA  
–
DC current gain1)  
h
FE  
IC  
= 100 mA; VCE = 1 V  
100  
160  
250  
160  
250  
350  
250  
400  
630  
BC 807-16, BC 808-16  
BC 807-25, BC 808-25  
BC 807-40, BC 808-40  
IC  
= 300 mA; VCE = 1 V  
60  
100  
170  
–
–
–
–
–
–
BC 807-16, BC 808-16  
BC 807-25, BC 808-25  
BC 807-40, BC 808-40  
Collector-emitter saturation voltage1)  
= 500 mA; I = 50 mA  
V
CEsat  
BEsat  
–
–
0.7  
V
IC  
B
Base-emitter saturation voltage1)  
= 500 mA; I = 50 mA  
V
–
–
2
IC  
B
AC characteristics  
Transition frequency  
f
T
–
–
–
200  
10  
–
–
–
MHz  
pF  
I
C
= 50 mA, VCE = 5 V, f = 20 MHz  
Output capacitance  
CB = 10 V, f = 1 MHz  
Input capacitance  
C
obo  
ibo  
V
C
60  
VEB = 0.5 V, f = 1 MHz  
1)  
Pulse test: t ≤ 300 µs, D ≤ 2 %.  
Semiconductor Group  
3
BC 807  
BC 808  
Total power dissipation Ptot = f (T  
A
*; TS  
)
Transition frequency f  
T
= f (I )  
C
* Package mounted on epoxy  
VCE = 5 V  
Permissible pulse load Ptot max/Ptot DC = f (t  
p
)
Collector cutoff current ICB0 = f (T )  
A
V
CB0 = 25 V  
Semiconductor Group  
4
BC 807  
BC 808  
Base-emitter saturation voltage  
Collector-emitter saturation voltage  
IC  
= f (VBEsat  
)
IC  
= f (VCEsat)  
hFE = 10  
hFE = 10  
DC current gain hFE = f (I )  
C
V
CE = 1 V  
Semiconductor Group  
5

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