BC808-40W-E6433 [INFINEON]
Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon;
| 型号： | BC808-40W-E6433 |
| 厂家： | 
Infineon |
| 描述： | Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon |
| 文件： | 总11页 (文件大小：109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BC807.../BC808...
PNP Silicon AF Transistor
• For general AF applications
• High collector current
• High current gain
• Low collector-emitter saturation voltage
• Complementary type:
BC817.../W, BC818.../W (NPN)
1)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type
Marking
5As
Pin Configuration
Package
BC807-16
BC807-16W
BC807-25
BC807-25W
BC807-40
BC807-40W
BC808-25
BC808-25W
BC808-40
BC808-40W
1 = B 2 = E 3 = C -
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SOT23
SOT323
SOT23
SOT323
SOT23
SOT323
SOT23
SOT323
SOT23
SOT323
5As
1 = B 2 = E 3 = C -
1 = B 2 = E 3 = C -
1 = B 2 = E 3 = C -
1 = B 2 = E 3 = C -
1 = B 2 = E 3 = C -
1 = B 2 = E 3 = C -
1 = B 2 = E 3 = C -
1 = B 2 = E 3 = C -
1 = B 2 = E 3 = C -
5Bs
5Bs
5Cs
5Cs
5Fs
5Fs
5Gs
5Gs
1Pb-containing package may be available upon special request
2007-06-08
1
BC807.../BC808...
Maximum Ratings
Parameter
Symbol
Value
Unit
V
Collector-emitter voltage
BC807...
V
V
V
CEO
CBO
EBO
45
25
BC808...
Collector-base voltage
BC807...
50
30
BC808...
5
Emitter-base voltage
Collector current
500
1000
100
200
mA
I
C
Peak collector current
Base current
I
CM
I
B
Peak base current
Total power dissipation-
I
BM
mW
°C
P
tot
T ≤ 79 °C BC807, BC808
330
250
S
T ≤ 130 °C BC807W, BC808W
S
150
Junction temperature
Storage temperature
T
j
T
-65 ... 150
stg
Thermal Resistance
Parameter
Symbol
Value
Unit
1)
K/W
Junction - soldering point
R
thJS
BC807, BC808
≤ 215
≤ 80
BC807W, BC808W
1For calculation of R
please refer to Application Note Thermal Resistance
thJA
2007-06-08
2
BC807.../BC808...
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ. max.
Unit
min.
DC Characteristics
Collector-emitter breakdown voltage
V
V
V
V
(BR)CEO
(BR)CBO
I = 10 mA, I = 0 , BC807...
45
25
-
-
-
-
C
B
I = 10 mA, I = 0 , BC808...
C
B
Collector-base breakdown voltage
I = 10 µA, I = 0 , BC807...
50
30
-
-
-
-
C
E
I = 10 µA, I = 0 , BC808...
C
E
Emitter-base breakdown voltage
I = 10 µA, I = 0
5
-
-
(BR)EBO
E
C
Collector-base cutoff current
I
I
µA
CBO
V
V
= 25 V, I = 0
-
-
-
-
-
-
0.1
50
CB
CB
E
= 25 V, I = 0 , T = 150 °C
E
A
100 nA
Emitter-base cutoff current
EBO
V
= 4 V, I = 0
EB
C
1)
-
250
400
630
-
DC current gain
h
FE
I = 100 mA, V = 1 V, h -grp. 16
100
160
250
40
160
250
350
-
C
CE
FE
I = 100 mA, V = 1 V, h -grp. 25
C
CE
FE
I = 100 mA, V = 1 V, h grp. 40
C
CE
FE
I = 500 mA, V = 1 V
C
CE
1)
Collector-emitter saturation voltage
I = 500 mA, I = 50 mA
V
V
-
-
0.7
V
CEsat
BEsat
C
B
1)
Base emitter saturation voltage
I = 500 mA, I = 50 mA
-
-
1.2
C
B
1Pulse test: t < 300µs; D < 2%
2007-06-08
3
BC807.../BC808...
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ. max.
Unit
min.
AC Characteristics
-
200
8
-
-
-
MHz
pF
Transition frequency
f
T
I = 50 mA, V = 5 V, f = 100 MHz
C
CE
-
-
Collector-base capacitance
= 10 V, f = 1 MHz
C
C
cb
eb
V
CB
60
Emitter-base capacitance
= 0.5 V, f = 1 MHz
V
EB
2007-06-08
4
BC807.../BC808...
DC current gain h = ƒ(I )
DC current gain h = ƒ(I )
FE
C
FE
C
V
= 1 V
V
= 1 V
CE
CE
h -grp. 16
h -grp. 25
FE
FE
10 3
10 3
10 2
10 2
105 °C
85 °C
65 °C
25 °C
-40 °C
105 °C
85 °C
65 °C
25 °C
-40 °C
10 1
10 -5
10 1
10 -4
10 -3
10 -2
10 -1
10 0
10 -5
10 -4
10 -3
10 -2
10 -1
10 0
A
A
I
I
C
C
DC current gain h = ƒ(I )
Collector-emitter saturation voltage
FE
C
V
= 1 V
I = ƒ(V
), h = 10
CE
C
CEsat
FE
h -grp. 40
FE
10 3
EHP00215
103
mA
Ι C
150 ˚C
25 ˚C
-50 ˚C
102
5
105 °C
10 2
101
5
85 °C
65 °C
25 °C
-40 °C
100
5
10-1
0
10 1
10 -5
10 -4
10 -3
10 -2
10 -1
10 0
0.2
0.4
0.6
V
0.8
A
I
VCEsat
C
2007-06-08
5
BC807.../BC808...
Base-emitter saturation voltage
Collector cutoff current I
= ƒ(T )
CBO A
I = ƒ(V
), h = 10
V
= 25 V
CBO
C
BEsat
FE
EHP00213
105
EHP00214
103
nA
mA
Ι CBO
Ι C
150 ˚C
25 ˚C
-50 ˚C
104
102
5
max
103
102
101
5
typ
100
5
101
100
10-1
0
0
50
100
150
1.0
2.0
3.0
V
4.0
˚C
TA
VBEsat
Transition frequency f = ƒ(I )
Collector-base capacitance C = ƒ(V
)
T
C
cb
CB
V
= parameter in V, f = 2 GHz
Emitter-base capacitance C = ƒ(V )
eb EB
CE
EHP00210
103
65
pF
MHz
5
f T
55
50
45
40
35
30
25
20
15
10
5
102
5
CEB
CCB
6
101
0
100
101
102
mA
Ι C
103
V
0
2
4
8
10 12 14 16
20
V
/V
CB EB
2007-06-08
6
BC807.../BC808...
Total power dissipation P = ƒ(T )
Total power dissipation P = ƒ(T )
tot S
tot
S
BC807, BC808
BC807W, BC808W
360
mW
300
mW
300
270
240
210
180
150
120
90
250
225
200
175
150
125
100
75
60
50
30
25
0
0
°C
°C
0
15 30 45 60 75 90 105 120
150
0
15 30 45 60 75 90 105 120
150
T
T
S
S
Permissible Pulse Load R
= ƒ(t )
Permissible Pulse Load
thJS
p
BC807, BC808
P
/P
= ƒ(t )
totmax totDC p
BC807, BC808
10 3
10 2
10 1
10 0
10 -1
10 4
-
10 3
D = 0
0.005
0.01
0.02
0.05
0.1
10 2
10 1
10 0
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
0.2
0.5
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
s
t
t
p
p
2007-06-08
7
BC807.../BC808...
Permissible Puls Load R
= ƒ (t )
Permissible Pulse Load
P /P = ƒ(t )
totmax totDC
thJS
p
BC807W, BC808W
p
BC807W, BC808W
10 3
K/W
10 3
-
10 2
10 1
10 0
10 -1
D = 0
0.005
0.01
0.02
0.05
0.1
10 2
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
0.2
0.5
10 1
10 0
10 -6
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10 -5
10 -4
10 -3
10 -2
10 0
s
s
t
t
p
p
2007-06-08
8
Package SOT23
BC807.../BC808...
Package Outline
±0.1
1
0.1 MAX.
±0.1
2.9
B
3
1
2
1)
+0.1
-0.05
0.4
A
0.08...0.15
C
0.95
0...8˚
1.9
0.25 B C
1) Lead width can be 0.6 max. in dambar area
M
M
0.2
A
Foot Print
0.8
0.8
1.2
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
EH
s
Pin 1
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
0.9
1.15
3.15
Pin 1
2007-06-08
9
Package SOT323
BC807.../BC808...
Package Outline
±0.1
0.9
±0.2
2
0.1 MAX.
0.1
+0.1
3x
0.3
-0.05
M
0.1
A
3
1
2
+0.1
0.15
-0.05
0.65 0.65
M
0.2
A
Foot Print
0.6
0.65
0.65
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
BCR108W
Type code
Pin 1
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
0.2
4
Pin 1
2.15
1.1
2007-06-08
10
BC807.../BC808...
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
2007-06-08
11
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