BC847BT [INFINEON]
NPN Silicon AF Transistors; NPN硅晶体管自动对焦型号: | BC847BT |
厂家: | Infineon |
描述: | NPN Silicon AF Transistors |
文件: | 总9页 (文件大小:232K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
BC846T...BC850T
NPN Silicon AF Transistors
For AF input stages and driver applications
High current gain
Low collector-emitter saturation voltage
Low noise between 30 Hz and 15 kHz
Complementary types:
3
BC856T, BC857T,
BC858T, BC859T, BC860T
2
1
VPS05996
Type
Marking
1As
1Bs
1Es
1Fs
1Gs
1Js
1Ks
1Ls
Pin Configuration
Package
SC75
SC75
SC75
SC75
SC75
SC75
SC75
SC75
SC75
SC75
SC75
SC75
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
1 = B
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
2 = E
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
3 = C
BC846AT
BC846BT
BC847AT
BC847BT
BC847CT
BC848AT
BC848BT
BC848CT
BC849BT
BC849CT
BC850BT
BC850CT
2Bs
2cs
2Fs
2Gs
1
Aug-01-2002
BC846T...BC850T
Maximum Ratings
Parameter
Symbol BC846T BC847T
Unit
BC848T
BC850T
BC849T
Collector-emitter voltage
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC collector current
Peak collector current
Peak base current
V
V
V
V
I
65
80
80
6
45
50
50
6
100
30
30
30
5
V
CEO
CBO
CES
EBO
mA
mA
C
I
200
200
CM
I
BM
Peak emitter current
I
200
EM
Total power dissipation, T = 109 °C
Junction temperature
P
250
150
mW
°C
S
tot
T
j
Storage temperature
T
-65 ... 150
stg
Thermal Resistance
Junction - soldering point
1)
R
165
K/W
thJS
Electrical Characteristics at T = 25°C, unless otherwise specified.
A
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
V
V
(BR)CEO
I = 10 mA, I = 0 BC846T
65
45
30
-
-
-
-
-
-
C
B
I = 10 mA, I = 0 BC847T/BC850T
C
B
I = 10 mA, I = 0 BC848T/BC849T
C
B
V
Collector-base breakdown voltage
I = 10 µA, I = 0 BC846T
(BR)CBO
80
50
30
-
-
-
-
-
-
C
E
I = 10 µA, I = 0 BC847T/850T
C
E
I = 10 µA, I = 0 BC848T/849T
C
E
1
For calculation of R
please refer to Application Note Thermal Resistance
thJA
2
Aug-01-2002
BC846T...BC850T
Electrical Characteristics at T = 25°C, unless otherwise specified.
A
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
V
V
(BR)CES
I = 10 µA, V = 0
BC846T
BC847T/850T
BC848T/849T
65
50
30
-
-
-
-
-
-
C
BE
I = 10 µA, V = 0
C
BE
I = 10 µA, V = 0
C
BE
Emitter-base breakdown voltage
V
(BR)EBO
I = 1 µA, I = 0
BC846T
BC847T/BC850T
BC848T/BC849T
6
6
5
-
-
-
-
-
-
E
C
I = 1 µA, I = 0
E
C
I = 1 µA, I = 0
E
C
Collector cutoff current
I
-
-
15
nA
µA
-
CBO
V
= 30 V, I = 0
CB
E
Collector cutoff current
= 30 V, I = 0 , T = 150 °C
I
CBO
-
-
5
V
CB
E
A
DC current gain 1)
I = 10 µA, V = 5 V h -group A
h
FE
-
-
-
140
250
480
-
-
-
C
CE
FE
I = 10 µA, V = 5 V h -group B
C
CE
FE
I = 10 µA, V = 5 V h -group C
C
CE
FE
DC current gain 1)
I = 2 mA, V = 5 V h -group A
h
FE
110
200
420
180
290
520
220
450
800
C
CE
FE
I = 2 mA, V = 5 V h -group B
C
CE
FE
I = 2 mA, V = 5 V h -group C
C
CE
FE
Collector-emitter saturation voltage1)
V
mV
CEsat
BEsat
I = 10 mA, I = 0.5 mA
-
-
90
200
250
600
C
B
I = 100 mA, I = 5 mA
C
B
V
V
Base-emitter saturation voltage 1)
-
-
700
900
-
-
I = 10 mA, I = 0.5 mA
C
B
I = 100 mA, I = 5 mA
C
B
Base-emitter voltage 1)
BE(ON)
I = 2 mA, V = 5 V
580
-
660
-
700
770
C
CE
I = 10 mA, V = 5 V
C
CE
1) Pulse test: t ≤=300µs, D = 2%
3
Aug-01-2002
BC846T...BC850T
Electrical Characteristicsat T = 25°C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
AC Characteristics
Transition frequency
f
-
-
-
250
3
-
-
-
MHz
pF
T
I = 20 mA, V = 5 V, f = 100 MHz
C
CE
Collector-base capacitance
C
cb
V
= 10 V, f = 1 MHz
CB
Emitter-base capacitance
= 0.5 V, f = 1 MHz
C
8
eb
V
EB
Short-circuit input impedance
h
k
11e
I = 2 mA, V = 5 V, f = 1 kHz hFE-group A
-
-
-
2.7
4.7
8.7
-
-
-
C
CE
I = 2 mA, V = 5 V, f = 1 kHz hFE-group B
C
CE
I = 2 mA, V = 5 V, f = 1 kHz hFE-group C
C
CE
-4
Open-circuit reverse voltage transf.ratio
h
10
12e
I = 2 mA, V = 5 V, f = 1 kHz hFE-group A
-
-
-
1.5
2
3
-
-
-
C
CE
I = 2 mA, V = 5 V, f = 1 kHz hFE-group B
C
CE
I = 2 mA, V = 5 V, f = 1 kHz hFE-group C
C
CE
Short-circuit forward current transf.ratio
h
-
21e
I = 2 mA, V = 5 V, f = 1 kHz hFE-group A
-
-
-
200
330
600
-
-
-
C
CE
I = 2 mA, V = 5 V, f = 1 kHz hFE-group B
C
CE
I = 2 mA, V = 5 V, f = 1 kHz hFE-group C
C
CE
Open-circuit output admittance
h
22e
S
I = 2 mA, V = 5 V, f = 1 kHz hFE-group A
-
-
-
18
30
60
-
-
-
C
CE
I = 2 mA, V = 5 V, f = 1 kHz hFE-group B
C
CE
I = 2 mA, V = 5 V, f = 1 kHz hFE-group C
C
CE
4
Aug-01-2002
BC846T...BC850T
Electrical Characteristics at T = 25°C, unless otherwise specified.
A
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Noise figure
F
dB
I = 200 µA, V = 5 V, R = 2 k ,
C
CE
S
f = 1 kHz, f = 200 Hz
BC849T
-
-
1.2
1
4
4
I = 200 µA, V = 5 V, R = 2 k ,
C
CE
S
f = 1 kHz, f = 200 Hz
BC850T
Equivalent noise voltage
V
-
-
0.135 µV
n
I = 200 µA, V = 5 V, R = 2 k ,
C
CE
S
f = 10 ... 50 Hz
BC850T
5
Aug-01-2002
BC846T...BC850T
Total power dissipation P = f (T )
Collector-base capacitance C = f (V
CB CBO
tot
S
Emitter-base capacitance C = f (V
)
EB
EBO
EHP00361
12 BC 846...850
pF
300
CCB0
CEB0
(
)
mW
10
8
200
150
100
50
CEB
6
4
CCB
2
0
0
°C
0
20
40
60
80
100 120
150
10 -1
5
10 0
V
101
T
(
)
VCB0 VEB0
S
Permissible Pulse Load
Transition frequency f = f (I )
T
C
P
/ P
= f (t )
V
= 5V
totmax
totDC
p
CE
10 3
EHP00363
103
MHz
5
f T
D=0
0.005
0.01
0.02
0.05
0.1
10 2
10 1
10 0
102
5
0.2
0.5
101
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
10-1
5
10 0
5
101
10 2
mA
t
Ι C
p
6
Aug-01-2002
BC846T...BC850T
Collector cutoff current I
= f (T )
Collector-emitter saturation voltage
CBO
A
V
= 30V
I = f (V
), h = 20
CB
C
CEsat FE
EHP00367
EHP00381
10 2
10 4
nA
mA
ΙCB0
Ι C
10 3
5
100 C
25 C
-50 C
101
5
max
10 2
5
typ
101
5
100
5
100
5
10 -1
10 -1
0
0
50
100
150
C
0.1
0.2
0.3
0.4
V
0.5
TA
VCEsat
DC current gain h = f (I )
Base-emitter saturation voltage
FE
C
V
= 5V
I = f (V
), h = 20
CE
C
BEsat FE
EHP00365
EHP00364
102
103
5
100 C
h FE
Ι C
mA
100
25
-50
C
C
C
25 C
-50 C
102
5
101
5
100
5
101
5
10-1
100
10-2
5 10 -1
5 10 0
5 101
10 2
mA
0
0.2
0.4
0.6
0.8
V
1.2
VBEsat
Ι C
7
Aug-01-2002
BC846T...BC850T
h parameter h = f (V ) normalized
h parameter h = f (I ) normalized
e
CE
e
C
I = 2mA
V
= 5V
C
CE
EHP00369
EHP00368
10 2
2.0
5
h e
he
Ι =
2 mA
C
h21
e
1.5
1.0
0.5
h11e
h11
V
CE = 5 V
e
10 1
5
h12e
h12
h22
e
e
10 0
5
h21e
h22e
10-1
0
0
10
20
V
30
10-1
5
10 0
10 1
mA
VCE
Ι C
Noise figure F = f (V )
Noise figure F = f (f)
I = 0.2mA, V = 5V, R = 2k
CE
I = 0.2mA, R = 2k , f = 1kHz
C
S
C
CE
S
BC 846...850
EHP00370
BC 846...850
EHP00371
20
dB
20
dB
F
F
15
10
5
15
10
5
0
0
10-1
5
10 0
101
V
10 2
10-2
10 -1
100
101 kHz 10 2
VCE
f
8
Aug-01-2002
BC846T...BC850T
Noise figure F = f (I )
Noise figure F = f (I )
C
C
V
= 5V, f = 120Hz
V
= 5V, f = 1kHz
CE
CE
BC 846...850
EHP00373
BC 846...850
EHP00372
20
20
dB
dB
F
F
15
15
RS
= 1 M
100 k
10 k
Ω
Ω
Ω
RS
= 1 M
100 k
10 k
Ω
Ω
Ω
10
10
Ω
500
1 k
Ω
5
0
5
0
Ω
500
1 k
Ω
10-3
10 -2
10 -1
10 0
10 1
mA
10-3
10-2
10-1
S = 1 M
10-1
100
101
mA
Ι C
Ι C
Noise figure F = f (I )
C
V
= 5V, f = 10kHz
CE
BC 846...850
EHP00374
20
dB
F
15
R
Ω
100 k
Ω
10
10 k
Ω
500
Ω
5
0
1 k
Ω
10-3
10-2
100
101
mA
Ι C
9
Aug-01-2002
相关型号:
BC847BT-13
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, ULTRA SMALL, PLASTIC PACKAGE-3
DIODES
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