BCP5616H6327XTSA1 [INFINEON]
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, GREEN, PLASTIC PACKAGE-4;
| 型号： | BCP5616H6327XTSA1 |
| 厂家： | 
Infineon |
| 描述： | Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, GREEN, PLASTIC PACKAGE-4 |
| 文件： | 总7页 (文件大小：821K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCP54...-BCP56...
NPN Silicon AF Transistors
• For AF driver and output stages
• High collector current
• Low collector-emitter saturation voltage
• Complementary types: BCP51...BCP53 (PNP)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type
Marking
Pin Configuration
Package
BCP54
BCP54-16
BCP55
BCP55-16
BCP56-10
BCP56-16
*
*
*
*
*
*
1=B 2=C 3=E 4=C
-
-
-
-
-
-
-
-
-
-
-
-
SOT223
SOT223
SOT223
SOT223
SOT223
SOT223
1=B 2=C 3=E 4=C
1=B 2=C 3=E 4=C
1=B 2=C 3=E 4=C
1=B 2=C 3=E 4=C
1=B 2=C 3=E 4=C
* Marking is the same as the type-name
2011-10-13
1
BCP54...-BCP56...
Maximum Ratings
Parameter
Symbol
Value
Unit
V
Collector-emitter voltage
BCP54
BCP55
V
V
V
CEO
CBO
EBO
45
60
80
BCP56
Collector-base voltage
BCP54
BCP55
45
60
100
BCP56
5
1
Emitter-base voltage
Collector current
A
I
C
1.5
100
200
2
Peak collector current, t ≤ 10 ms
Base current
Peak base current
Total power dissipation-
I
I
B
I
BM
P
p
CM
mA
W
tot
T ≤ 120°C
S
150
°C
Junction temperature
Storage temperature
T
j
T
-65 ... 150
Thermal Resistance
Parameter
Symbol
Value
≤ 15
Unit
K/W
1)
Junction - soldering point
1
R
thJS
For calculation of R
please refer to Application Note AN077 (Thermal Resistance Calculation)
thJA
2011-10-13
2
BCP54...-BCP56...
Electrical Characteristics at T = 25°C, unless otherwise specified
Parameter
Symbol
Values
typ. max.
Unit
min.
DC Characteristics
Collector-emitter breakdown voltage
V
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
I = 10 mA, I = 0 , BCP54...
45
60
80
-
-
-
-
-
-
C
B
I = 10 mA, I = 0 , BCP55...
C
B
I = 10 mA, I = 0 , BCP56-10, -16
C
B
Collector-base breakdown voltage
I = 100 µA, I = 0 , BCP54...
45
60
100
-
-
-
-
-
-
C
E
I = 100 µA, I = 0 , BCP55...
C
E
I = 100 µA, I = 0 , BCP56-10, -16
C
E
Emitter-base breakdown voltage
I = 10 µA, I = 0
5
-
-
E
C
Collector-base cutoff current
I
µA
-
CBO
V
V
= 30 V, I = 0
-
-
-
-
0.1
20
CB
CB
E
= 30 V, I = 0 , T = 150 °C
E
A
1)
DC current gain
I = 5 mA, V = 2 V
h
FE
25
40
63
100
25
-
-
-
C
CE
I = 150 mA, V = 2 V, BCP54/BCP55
250
160
250
-
C
CE
I = 150 mA, V = 2 V, BCP56-10
100
160
-
C
CE
I = 150 mA, V = 2 V, BCP54-16...BCP56-16
C
CE
I = 500 mA, V = 2 V
C
CE
1)
Collector-emitter saturation voltage
I = 500 mA, I = 50 mA
V
-
-
0.5
V
CEsat
C
B
1)
Base-emitter voltage
I = 500 mA, V = 2 V
V
BE(ON)
-
-
1
C
CE
AC Characteristics
Transition frequency
-
100
-
MHz
f
T
I = 50 mA, V = 10 V, f = 100 MHz
C
CE
1
Pulse test: t < 300µs; D < 2%
2011-10-13
3
BCP54...-BCP56...
DC current gain h = ƒ(I )
Collector-emitter saturation voltage
FE
C
V
= 2 V
I = ƒ(V
), h = 10
CE
C
CEsat FE
BCP 54...56
EHP00268
103
BCP 54...56
EHP00271
104
5
h FE
mA
Ι C
103
102
101
100
100
25
C
C
102
5
-50
C
100 C
25 C
-50 C
101
5
100
0
0.2
0.4
0.6
V
0.8
100
101
102
103 mA 104
Ι C
VCEsat
Base-emitter saturation voltage
Collector cutoff current I
= ƒ(T )
CBO A
I = ƒ(V
), h = 10
V
= 30 V
C
BEsat
FE
CBO
BCP 54...56
EHP00270
BCP 54...56
EHP00269
104
104
nA
Ι C
mA
103
Ι CBO
max
103
100
25
-50
C
C
C
102
101
102
101
100
typ
100
10-1
0
0.2
0.4
0.6
0.8
V
1.2
0
50
100
C
150
VBEsat
TA
2011-10-13
4
BCP54...-BCP56...
Transition frequency f = ƒ(I )
Total power dissipation P = ƒ(T )
tot S
T
C
V
= 10 V
CE
BCP 54...56
EHP00267
103
2.4
W
MHz
5
f T
1.6
1.2
0.8
0.4
0
102
5
101
100
5 101
5 102
mA
ΙC
103
°C
0
15 30 45 60 75 90 105 120
150
T
S
Permissible Pulse Load R
= ƒ(t )
Permissible Pulse Load
thJS
p
P
/P
= ƒ(t )
totmax totDC
p
10 2
10 3
-
D = 0
0.005
0.01
0.02
0.05
0.1
10 1
10 0
10 -1
10 2
10 1
10 0
D = 0,5
0,2
0.2
0.5
0,1
0,05
0,02
0,01
0,005
0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
10 -6
10 -5
10 -4
10 -3
10 -2
10 0
s
s
t
t
p
p
2011-10-13
5
Package SOT223
BCP54...-BCP56...
Package Outline
0.1
1.6
0.2
6.5
A
0.1
0.1 MAX.
3
B
4
3
1
2
2.3
0.1
0.7
0.28
0.0
4
4.6
0...10˚
M
0.25
A
M
0.25
B
Foot Print
3.5
1.2 1.1
Marking Layout (Example)
Manufacturer
2005, 24 CW
Date code (YYWW)
BCP52-16
Type code
Pin 1
Packing
Reel ø180 mm = 1.000 Pieces/Reel
Reel ø330 mm = 4.000 Pieces/Reel
0.3 MAX.
8
1.75
6.8
Pin 1
2011-10-13
6
BCP54...-BCP56...
Edition 2009-11-16
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee
of conditions or characteristics. With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of
the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation, warranties of non-infringement of
intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices,
please contact the nearest Infineon Technologies Office (<www.infineon.com>).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon
Technologies Office.
Infineon Technologies components may be used in life-support devices or systems
only with the express written approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the failure of that life-support
device or system or to affect the safety or effectiveness of that device or system.
Life support devices or systems are intended to be implanted in the human body or
to support and/or maintain and sustain and/or protect human life. If they fail, it is
reasonable to assume that the health of the user or other persons may be
endangered.
2011-10-13
7
相关型号：
BCP56E6433
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon,
INFINEON
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