BCV26 [INFINEON]
PNP Silicon Darlington Transistors (For general AF applications High collector current); PNP硅达林顿晶体管（一般自动对焦的应用高集电极电流）
| 型号： | BCV26 |
| 厂家： | 
Infineon |
| 描述： | PNP Silicon Darlington Transistors (For general AF applications High collector current) |
| 文件： | 总4页 (文件大小：145K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PNP Silicon Darlington Transistors
BCV 26
BCV 46
● For general AF applications
● High collector current
● High current gain
● Complementary types: BCV 27, BCV 47 (NPN)
Package1)
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
1
2
3
BCV 26
BCV 46
FDs
FEs
Q62702-C1493
Q62702-C1475
B
E
C
SOT-23
Maximum Ratings
Parameter
Symbol Values
Unit
BCV 26
BCV 46
60
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
V
V
CE0
CB0
EB0
30
V
40
80
10
10
I
I
I
I
C
500
mA
Peak collector current
Base current
CM
800
100
200
360
150
B
Peak base current
BM
Total power dissipation, T
S
= 74 ˚C Ptot
mW
˚C
Junction temperature
T
T
j
Storage temperature range
stg
– 65 … + 150
Thermal Resistance
Junction - ambient2)
R
th JA
th JS
≤ 280
≤ 210
K/W
Junction - soldering point
R
1)
For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
2)
5.91
Semiconductor Group
1
BCV 26
BCV 46
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Collector-emitter breakdown voltage
IC = 10 mA
V(BR)CE0
V(BR)CB0
V(BR)EB0
V
BCV 26
BCV 46
30
60
–
–
–
–
Collector-base breakdown voltage
= 100 µA
IC
BCV 26
BCV 46
40
80
–
–
–
–
Emitter-base breakdown voltage, I
E
= 10 µA
10
–
–
Collector cutoff current
ICB0
V
V
V
V
CB = 30 V
CB = 60 V
CB = 30 V, T
CB = 60 V, T
BCV 26
BCV 46
BCV 26
BCV 46
–
–
–
–
–
–
–
–
100
100
10
nA
nA
µA
µA
A
A
= 150 ˚C
= 150 ˚C
10
Emitter cutoff current, VEB = 4 V
I
EB0
FE
–
–
100
nA
–
DC current gain1)
h
4000
2000
10000 –
4000
20000 –
10000 –
4000
2000
–
–
–
–
–
–
–
–
–
–
IC
IC
IC
IC
= 100 µA, VCE = 1 V
= 10 mA, VCE = 5 V
= 100 mA, VCE = 5 V
= 0.5 A, VCE = 5 V
BCV 26
BCV 46
BCV 26
BCV 46
BCV 26
BCV 46
BCV 26
BCV 46
–
–
–
Collector-emitter saturation voltage1)
= 100 mA, I = 0.1 mA
V
CEsat
BEsat
–
–
1
V
IC
B
Base-emitter saturation voltage1)
= 100 mA, I = 0.1 mA
V
–
–
1.5
IC
B
AC characteristics
Transition frequency
f
T
–
–
200
4.5
–
–
MHz
pF
IC
= 50 mA, VCE = 5 V, f = 20 MHz
Output capacitance
C
obo
VCB = 10 V, f = 1 MHz
1)
Pulse test: t ≤ 300 µs, D = 2 %.
Semiconductor Group
2
BCV 26
BCV 46
Total power dissipation Ptot = f (T
* Package mounted on epoxy
A
*; TS
)
Collector-base capacitance CCB0 = f (VCB0
Emitter-base capacitance CEB0 = f (VEB0
)
)
Permissible pulse load Ptot max/Ptot DC = f (t
p
)
Transition frequency f
T
= f (I )
C
V
CE = 5 V
Semiconductor Group
3
BCV 26
BCV 46
Base-emitter saturation voltage
Collector-emitter saturation voltage
IC
= f (VBEsat
)
IC
= f (VCEsat)
hFE = 1000
hFE = 1000
Collector cutoff current ICB0 = f (T
A
)
DC current gain hFE = f (I )
C
V
CB = VCE max
VCE = 5 V
Semiconductor Group
4
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