BCW66GE6327 [INFINEON]
Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon;
| 型号： | BCW66GE6327 |
| 厂家： | 
Infineon |
| 描述： | Small Signal Bipolar Transistor, 0.8A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon 光电二极管 晶体管 |
| 文件： | 总7页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCW66
NPN Silicon AF Transistors
• For general AF applications
• High current gain
2
1
3
• Low collector-emitter saturation voltage
• Complementary type: BCW68 (PNP)
1)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
Type
Marking
EFs
Pin Configuration
Package
BCW66F
BCW66KF*
BCW66G
BCW66KG*
BCW66H
BCW66KH*
1=B
1=B
1=B
1=B
1=B
1=B
2=E
2=E
2=E
2=E
2=E
2=E
3=C
3=C
3=C
3=C
3=C
3=C
SOT23
SOT23
SOT23
SOT23
SOT23
SOT23
EFs
EGs
EGs
EHs
EHs
* Shrinked chip version
Maximum Ratings
Parameter
Symbol
Value
Unit
45
75
5
V
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
V
V
CEO
CBO
EBO
800
1
mA
A
I
C
Peak collector current
Base current
I
CM
100
200
mA
I
B
Peak base current
Total power dissipation-
I
BM
mW
°C
P
tot
T ≤ 79 °C, BCW66
330
500
S
T ≤ 115 °C, BCW66K
S
150
Junction temperature
Storage temperature
T
j
T
-65 ... 150
stg
1Pb-containing package may be available upon special request
2007-04-20
1
BCW66
Thermal Resistance
Parameter
Symbol
Value
Unit
1)
K/W
Junction - soldering point
R
thJS
BCW66
≤ 215
BCW66K
≤ 70
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
45
-
-
-
-
-
-
Collector-emitter breakdown voltage
V
V
V
V
(BR)CEO
(BR)CBO
(BR)EBO
CBO
I = 10 mA, I = 0
C
B
Collector-base breakdown voltage
I = 10 µA, I = 0
75
5
C
E
Emitter-base breakdown voltage
I = 10 µA, I = 0
E
C
Collector-base cutoff current
I
I
µA
V
V
= 45 V, I = 0
-
-
-
-
-
-
0.02
20
CB
CB
E
= 45 V, I = 0 , T = 150 °C
E
A
20
nA
-
Emitter-base cutoff current
EBO
V
= 5 V, I = 0
EB
C
2)
DC current gain
h
FE
I = 100 µA - 10 mA, V = 1 V, hFE-grp.F
75
-
-
-
-
C
CE
I = 100 µA - 10 mA, V = 1 V, hFE-grp.G
110
180
100
160
250
40
C
CE
I = 100 µA - 10 mA, V = 1 V, hFE-grp.H
-
-
C
CE
I = 100 mA, V = 1 V, hFE-grp.F
160
250
350
-
250
400
630
-
C
CE
I = 100 mA, V = 1 V, hFE-grp.G
C
CE
I = 100 mA, V = 1 V, hFE-grp.H
C
CE
I = 500 mA, V = 1 V, hFE-grp.F, G, H
C
CE
2)
Collector-emitter saturation voltage
I = 100 mA, I = 10 mA
V
V
V
CEsat
BEsat
-
-
-
-
0.3
C
B
I = 500 mA, I = 50 mA
0.45
C
B
2)
Base emitter saturation voltage
I = 100 mA, I = 10 mA
-
-
-
-
1.25
1.25
C
B
I = 500 mA, I = 50 mA
C
B
1For calculation of R
please refer to Application Note Thermal Resistance
thJA
2Pulse test: t < 300µs; D < 2%
2007-04-20
2
BCW66
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
Unit
min.
typ. max.
AC Characteristics
-
170
-
MHz
pF
Transition frequency
f
T
I = 50 mA, V = 5 V, f = 20 MHz
C
CE
Collector-base capacitance
C
C
cb
eb
V
V
= 10 V, f = 1 MHz, BCW66
= 10 V, f = 1 MHz, BCW66K
-
-
6
3
-
-
CB
CB
Emitter-base capacitance
V
V
= 0.5 V, f = 1 MHz, BCW66
= 0.5 V, f = 1 MHz, BCW66K
-
-
60
40
-
-
EB
EB
2007-04-20
3
BCW66
DC current gain h = ƒ(I )
Collector-emitter saturation voltage
I = ƒ(V ), h = 10
FE
C
V
= 1 V
CE
C
CEsat
FE
BCW 65/66
EHP00396
BCW 65/66
EHP00395
103
103
mA
5
100 ˚C
150 ˚C
25 ˚C
-50 ˚C
hFE
Ι C
25 ˚C
102
5
102
5
-50 ˚C
101
5
101
5
100
5
10-1
100
10-1
5 100
5 101
5 102
Ι C
103
mA
0
200
400
600
800
mV
VCE sat
Base-emitter saturation voltage
Collector cutoff current I
= ƒ(T )
CBO A
I = ƒ(V
), h = 10
V
= V
CB CEmax
C
BEsat
FE
BCW 65/66
EHP00394
BCW 65/66
EHP00393
103
mA
10 5
nA
150 ˚C
25 ˚C
-50 ˚C
Ι CB0
ΙC
10 4
5
102
5
10 3
5
max
typ
101
5
10 2
5
100
5
101
5
10 0
10-1
0
50
100
150
˚C
TA
0
1
2
3
V
4
VBE sat
2007-04-20
4
BCW66
Transition frequency f = ƒ(I )
Collector-base capacitance C = ƒ(V )
cb CB
T
C
V
= 5 V
Emitter-base capacitance C = ƒ(V )
eb EB
CE
____
BCW66: - - - , BCW66K:
BCW 65/66
EHP00391
103
75
pF
MHz
5
f T
60
55
50
45
40
35
30
25
20
15
10
5
CEB: BCW66
CEB: BCW66K
CCB: BCW66
CCB: BCW66K
102
5
101
0
100
101
102
mA 103
V
0
2
4
6
8
10 12 14 16
20
C
/C
Ι C
CB EB
Total power dissipation P = ƒ(T )
Permissible Pulse Load
tot
S
____
BCW66: - - - , BCW66K:
P
/P
= ƒ(t )
totmax totDC
p
BCW 65/66
EHP00392
103
550
mW
Ptotmax
PtotDC
t p
5
t p
T
D
=
450
T
BCW66K
BCW66
400
102
5
D
0
=
350
300
250
200
150
100
50
0.005
0.01
0.02
0.05
0.1
0.2
0.5
101
5
100
0
10-6 10-5 10-4 10-3 10-2
s
100
0
15 30 45 60 75 90 105 120
150
°C
T
t p
S
2007-04-20
5
Package SOT23
BCW66
Package Outline
±0.1
1
0.1 MAX.
±0.1
2.9
B
3
1
2
1)
+0.1
-0.05
0.4
A
0.08...0.15
C
0.95
0...8˚
1.9
0.25 B C
1) Lead width can be 0.6 max. in dambar area
M
M
0.2
A
Foot Print
0.8
0.8
1.2
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
EH
s
Pin 1
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
0.9
1.15
3.15
Pin 1
2007-04-20
6
BCW66
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
2007-04-20
7
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