BCX5116H6433XTMA1 [INFINEON]

Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT PACKAGE-3;
BCX5116H6433XTMA1
型号: BCX5116H6433XTMA1
厂家: Infineon    Infineon
描述:

Power Bipolar Transistor, 1A I(C), 45V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT PACKAGE-3

文件: 总8页 (文件大小:520K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BCX51...-BCX53...  
PNP Silicon AF Transistors  
1
For AF driver and output stages  
High collector current  
2
3
2
Low collector-emitter saturation voltage  
Complementary types: BCX54...BCX56 (NPN)  
Pb-free (RoHS compliant) package  
Qualified according AEC Q101  
Type  
BCX51  
BCX51-16  
BCX52  
BCX52-16  
BCX53  
Marking  
AA  
AD  
AE  
AM  
AH  
AK  
AL  
Pin Configuration  
Package  
SOT89  
SOT89  
SOT89  
SOT89  
SOT89  
SOT89  
SOT89  
1=B  
1=B  
1=B  
1=B  
1=B  
1=B  
1=B  
2=C  
2=C  
2=C  
2=C  
2=C  
2=C  
2=C  
3=E  
3=E  
3=E  
3=E  
3=E  
3=E  
3=E  
BCX53-10  
BCX53-16  
2011-07-29  
1
BCX51...-BCX53...  
Maximum Ratings  
Parameter  
Symbol  
Value  
Unit  
V
Collector-emitter voltage  
BCX51  
BCX52  
V
V
V
CEO  
CBO  
EBO  
45  
60  
80  
BCX53  
Collector-base voltage  
BCX51  
BCX52  
45  
60  
100  
BCX53  
5
1
Emitter-base voltage  
Collector current  
A
I
C
1.5  
100  
200  
2
Peak collector current, t 10 ms  
Base current  
Peak base current  
Total power dissipation  
I
I
B
I
BM  
P
p
CM  
mA  
W
tot  
T 120 °C  
S
150  
°C  
Junction temperature  
Storage temperature  
T
j
T
-65 ... 150  
stg  
Thermal Resistance  
Parameter  
Junction - soldering point  
Symbol  
Value  
15  
Unit  
K/W  
1)  
R
thJS  
1
For calculation of R  
please refer to Application Note AN077 (Thermal Resistance Calculation)  
thJA  
2011-07-29  
2
BCX51...-BCX53...  
Electrical Characteristics at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Values  
typ. max.  
Unit  
min.  
DC Characteristics  
Collector-emitter breakdown voltage  
V
V
V
V
(BR)CEO  
(BR)CBO  
(BR)EBO  
I = 10 mA, I = 0 , BCX51  
45  
60  
80  
-
-
-
-
-
-
C
B
I = 10 mA, I = 0 , BCX52  
C
B
I = 10 mA, I = 0 , BCX53  
C
B
Collector-base breakdown voltage  
I = 100 µA, I = 0 , BCX51  
45  
60  
100  
-
-
-
-
-
-
C
E
I = 100 µA, I = 0 , BCX52  
C
E
I = 100 µA, I = 0 , BCX53  
C
E
Emitter-base breakdown voltage  
I = 10 µA, I = 0  
5
-
-
E
C
Collector-base cutoff current  
I
µA  
-
CBO  
V
V
= 30 V, I = 0  
-
-
-
-
0.1  
20  
CB  
CB  
E
= 30 V, I = 0 , T = 150 °C  
E
A
1)  
DC current gain  
I = 5 mA, V = 2 V  
h
FE  
25  
40  
63  
100  
25  
-
-
-
C
CE  
I = 150 mA, V = 2 V, BCX51...BCX53  
250  
160  
250  
-
C
CE  
I = 150 mA, V = 2 V, BCX53-10  
100  
160  
-
C
CE  
I = 150 mA, V = 2 V, BCX51-16...BCX53-16  
C
CE  
I = 500 mA, V = 2 V  
C
CE  
1)  
Collector-emitter saturation voltage  
I = 500 mA, I = 50 mA  
V
-
-
0.5  
V
CEsat  
C
B
1)  
Base-emitter voltage  
I = 500 mA, V = 2 V  
V
BE(ON)  
-
-
1
C
CE  
AC Characteristics  
Transition frequency  
-
125  
-
MHz  
f
T
I = 50 mA, V = 10 V, f = 20 MHz  
C
CE  
1
Pulse test: t < 300µs; D < 2%  
2011-07-29  
3
BCX51...-BCX53...  
DC current gain h = ƒ(I )  
Collector-emitter saturation voltage  
FE  
C
V
= 2 V  
I = ƒ(V  
), h = 10  
CE  
C
CEsat FE  
BCX 51...53  
EHP00440  
BCX 51...53  
EHP00441  
104  
mA  
103  
5
hFE  
ΙC  
103  
5
100 ˚C  
25 ˚C  
102  
5
-50 ˚C  
˚C  
˚C  
˚C  
100  
25  
-50  
102  
5
101  
5
101  
5
100  
100  
100  
5 101  
5 10 2  
5 103  
Ι C  
104  
mA  
0
0.2  
0.4  
0.6  
VCE sat  
V
0.8  
Base-emitter saturation voltage  
I = ƒ(V ), h = 10  
Collector current I = ƒ(V )  
C BE  
V = 2V  
C
BEsat  
FE  
CE  
BCX 51...53  
EHP00443  
BCX 51...53  
EHP00437  
10 4  
mA  
104  
mA  
Ι C  
Ι C  
10 3  
5
103  
5
˚C  
˚C  
-50˚C  
100  
25  
˚C  
˚C  
-50 ˚C  
100  
25  
10 2  
5
102  
5
101  
5
101  
5
10 0  
100  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
V
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
V
VBE sat  
VBE  
2011-07-29  
4
BCX51...-BCX53...  
Collector cutoff current I  
= ƒ(T )  
Transition frequency f = ƒ(I )  
CBO  
A
T
C
V
= 30 V  
V
= 10 V  
CBO  
CE  
BCX 51...53  
EHP00439  
BCX 51...53  
EHP00442  
10 4  
nA  
103  
MHz  
5
max  
f T  
Ι CB0  
10 3  
5
10 2  
5
102  
5
typ  
10 1  
5
100  
5
101  
10 -1  
100  
5
101  
5
102  
103  
0
50  
100  
150  
˚C  
TA  
mA  
Ι C  
Total power dissipation P = ƒ(T )  
Permissible Pulse Load R  
= ƒ(t )  
thJS p  
tot  
S
10 2  
2.4  
W
10 1  
10 0  
10 -1  
1.6  
1.2  
0.8  
0.4  
0
D = 0,5  
0,2  
0,1  
0,05  
0,02  
0,01  
0,005  
0
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
°C  
s
0
15 30 45 60 75 90 105 120  
150  
T
t
p
S
2011-07-29  
5
BCX51...-BCX53...  
Permissible Pulse Load  
P
/P  
= ƒ(t )  
totmax totDC  
p
10 3  
-
D = 0  
0.005  
0.01  
0.02  
0.05  
0.1  
10 2  
10 1  
10 0  
0.2  
0.5  
10 -6  
10 -5  
10 -4  
10 -3  
10 -2  
10 0  
s
t
p
2011-07-29  
6
Package SOT89  
BCX51...-BCX53...  
Package Outline  
0.1  
4.5  
B
0.1  
1.5  
45˚  
0.25  
0.2 MAX.1)  
0.05  
0.2  
1.6  
0.15  
1
2
3
1.5  
0.1  
0.35  
+0.2  
-0.1  
0.45  
M
0.15  
B
x3  
3
0.2  
B
1) Ejector pin markings possible  
Foot Print  
2.0  
0.8  
0.8  
0.7  
Marking Layout (Example)  
BAW78D  
Type code  
Pin 1  
2005, June  
Date code (YM)  
Manufacturer  
Standard Packing  
Reel ø180 mm = 1.000 Pieces/Reel  
Reel ø330 mm = 4.000 Pieces/Reel  
0.2  
8
Pin 1  
1.6  
4.3  
2011-07-29  
7
BCX51...-BCX53...  
Edition 2009-11-16  
Published by  
Infineon Technologies AG  
81726 Munich, Germany  
2009 Infineon Technologies AG  
All Rights Reserved.  
Legal Disclaimer  
The information given in this document shall in no event be regarded as a guarantee  
of conditions or characteristics. With respect to any examples or hints given herein,  
any typical values stated herein and/or any information regarding the application of  
the device, Infineon Technologies hereby disclaims any and all warranties and  
liabilities of any kind, including without limitation, warranties of non-infringement of  
intellectual property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices,  
please contact the nearest Infineon Technologies Office (<www.infineon.com>).  
Warnings  
Due to technical requirements, components may contain dangerous substances.  
For information on the types in question, please contact the nearest Infineon  
Technologies Office.  
Infineon Technologies components may be used in life-support devices or systems  
only with the express written approval of Infineon Technologies, if a failure of such  
components can reasonably be expected to cause the failure of that life-support  
device or system or to affect the safety or effectiveness of that device or system.  
Life support devices or systems are intended to be implanted in the human body or  
to support and/or maintain and sustain and/or protect human life. If they fail, it is  
reasonable to assume that the health of the user or other persons may be  
endangered.  
2011-07-29  
8

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