BCX55 [INFINEON]

NPN Silicon AF Transistors (For AF driver and output stages High collector current); NPN硅晶体管自动对焦（ AF对于驱动和输出级高集电极电流）


型号：	BCX55
厂家：	Infineon
描述：	NPN Silicon AF Transistors (For AF driver and output stages High collector current) NPN硅晶体管自动对焦（ AF对于驱动和输出级高集电极电流）晶体晶体管驱动放大器
文件：	总5页 (文件大小：149K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

NPN Silicon AF Transistors

BCX 54 … BCX 56

Features

● For AF driver and output stages

● High collector current

● Low collector-emitter saturation voltage

● Complementary types: BCX 51 … BCX 53 (PNP)

Package¹⁾

Type

Marking

Ordering Code

(tape and reel)

Pin Configuration

BCX 54

Q62702-C954

Q62702-C1861

Q62702-C1731

Q62702-C1729

Q62702-C1730

Q62702-C1903

Q62702-C1614

Q62702-C1635

Q62702-C1613

SOT-89

BCX 54-10

BCX 54-16

BCX 55

BCX 55-10

BCX 55-16

BCX 56

BCX 56-10

BCX 56-16

For detailed information see chapter Package Outlines.

Semiconductor Group

04.96

BCX 54 … BCX 56

Maximum Ratings

Parameter

Symbol

Values

Unit

BCX 54 BCX 55

BCX 56

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CE0

CB0

EB0

100

Peak collector current

Base current

1.5

100

200

Peak base current

Total power dissipation, T

= 130 ˚C Ptot

Junction temperature

150

˚C

Storage temperature range

stg

– 65 … + 150

Thermal Resistance

Junction - ambient¹⁾

th JA

th JS

≤ 75

≤ 20

K/W

Junction - soldering point

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm²Cu.

Semiconductor Group

BCX 54 … BCX 56

Electrical Characteristics

at T = 25 ˚C, unless otherwise specified.

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC characteristics

Collector-emitter breakdown voltage

IC = 10 mA

V(BR)CE0

V(BR)CB0

V(BR)EB0

BCX 54

BCX 55

BCX 56

–

Collector-base breakdown voltage

= 100 µA

BCX 54

BCX 55

BCX 56

100

–

Emitter-base breakdown voltage

= 10 µA

–

Collector cutoff current

CB0

EB0

VCB = 30 V

–

100

µA

CB = 30 V, T

= 150 ˚C

Emitter cutoff current

–

VEB = 4 V

DC current gain¹⁾

hFE

–

= 5 mA, VCE = 2 V

= 150 mA, VCE = 2 V

100

–

250

160

250

–

BCX 54, BCX 55, BCX 56

BCX 54-10, BCX 55-10, BCX 56-10

BCX 54-16, BCX 55-16, BCX 56-16

= 500 mA, VCE = 2 V

100

160

–

Collector-emitter saturation voltage¹⁾

= 500 mA, I = 50 mA

CEsat

–

0.5

Base-emitter voltage¹⁾

= 500 mA, VCE = 2 V

–

AC characteristics

Transition frequency

–

100

–

MHz

= 50 mA, VCE = 10 V, f = 20 MHz

Pulse test: t ≤ 300 µs, D = 2 %.

Semiconductor Group

BCX 54 … BCX 56

Total power dissipation Ptot = f (T

*; TS

)

Transition frequency f

= f (I )

* Package mounted on epoxy

VCE = 10 V

Permissible pulse load P^{tot max}/Ptot DC = f (t

Collector cutoff current I^CB0= f (T )

CB = 30 V

Semiconductor Group

BCX 54 … BCX 56

Collector current I

= f (VBE

)

Collector-emitter saturation voltage

CE = 2 V

= f (VCEsat)

hFE = 10

Base-emitter saturation voltage

DC current gain hFE = f (I )

= f (VBEsat

)

VCE = 2 V

hFE = 10

Semiconductor Group

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