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BF5020R-E6327 [INFINEON]

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET;
BF5020R-E6327
型号： BF5020R-E6327
厂家： Infineon    Infineon
描述：

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
文件： 总11页 (文件大小：567K)
中文：  中文翻译
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BF5020...  
Silicon N-Channel MOSFET Tetrode  
• Low noise gain controlled input stages of UHF- and  
3
VHF - tuners with 3 V up to 5 V supply voltage  
2
1
4
• Integrated gate protection diodes  
• Excellent noise figure  
• High gain, high forward transadmittance  
• Improved cross modulation at gain reduction  
• Pb-free (RoHS compliant) package  
• Qualified according AEC Q101  
Drain  
HF Output  
+ DC  
G2  
G1  
AGC  
HF  
Input  
RG1  
GND  
VGG  
EHA07461  
ESD (Electrostatic discharge) sensitive device, observe handling precaution!  
Type  
Package  
SOT143  
Pin Configuration  
1 = S 2 = D 3 = G2 4 = G1 -  
Marking  
KYs  
KYs  
BF5020  
BF5020R  
BF5020W  
-
-
-
SOT143R 1 = D 2 = S 3 = G1 4 = G2 -  
SOT343  
1 = D 2 = S 3 = G1 4 = G2 -  
KYs  
Maximum Ratings  
Parameter  
Drain-source voltage  
Symbol  
V
DS  
Value  
8
Unit  
V
25  
mA  
Continuous drain current  
Gate 1/ gate 2-source current  
Gate 1/ gate 2-source voltage  
Total power dissipation  
I
D
I
, I  
, V  
10  
6
mA  
V
mW  
G1S G2S  
V
P
G1S G2S  
tot  
TS ≤ 76 °C, BF5020, BF5020R  
TS ≤ 94 °C, BF5020W  
200  
200  
°C  
Storage temperature  
Channel temperature  
T
T
-55 ... 150  
150  
stg  
ch  
2009-10-01  
1
BF5020...  
Thermal Resistance  
Parameter  
Channel - soldering point  
BF5020, BF5020R  
BF5020W  
Symbol  
R
thchs  
Value  
Unit  
K/W  
1)  
≤ 370  
≤ 280  
Electrical Characteristics at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Values  
Unit  
min.  
typ. max.  
DC Characteristics  
12  
6
6
-
-
-
-
15  
15  
50  
50  
100  
-
V
Drain-source breakdown voltage  
V
(BR)DS  
I = 20 µA, V  
= 0 , V  
= 0  
D
G1S  
G2S  
Gate1-source breakdown voltage  
+I = 10 mA, V = 0 , V = 0  
+V  
+V  
(BR)G1SS  
(BR)G2SS  
G1SS  
G1S  
G2S  
DS  
-
Gate2-source breakdown voltage  
+I = 10 mA, V = 0 , V = 0  
G2S  
G1S  
DS  
-
nA  
Gate1-source leakage current  
= 6 V, V = 0 , V = 0  
+I  
+I  
V
G1S  
G2S  
DS  
-
-
Gate2-source leakage current  
= 6 V, V = 0 , V = 0  
G2SS  
V
G2S  
G1S  
DS  
-
-
Drain current  
= 5 V, V  
I
DSS  
V
= 0 , V  
= 4 V  
G2S  
DS  
G1S  
-
14  
mA  
V
Drain-source current  
= 5 V, V = 4 V, R = 120 kΩ  
I
DSX  
V
DS  
G2S  
G1  
Gate1-source pinch-off voltage  
= 5 V, V = 4 V, I = 20 µA  
V
V
-
-
0.7  
0.7  
-
-
G1S(p)  
G2S(p)  
V
DS  
G2S  
D
Gate2-source pinch-off voltage  
V
= 5 V, I = 20 µA, V  
= 2 V  
DS  
D
G1S  
1
For calculation of RthJA please refer to Application Note Thermal Resistance  
2009-10-01  
2
BF5020...  
Electrical Characteristics at T = 25°C, unless otherwise specified  
A
Parameter  
Symbol  
Values  
typ. max.  
Unit  
min.  
AC Characteristics - (verified by random sampling)  
Forward transconductance  
-
-
-
34  
2.4  
1
-
-
-
g
mS  
pF  
fs  
V
= 5 V, I = 10 mA, V  
= 4 V  
= 4 V  
= 4 V  
= 4 V,  
= 4 V,  
DS  
D
G2S  
G2S  
G2S  
Gate1 input capacitance  
= 5 V, I = 10 mA, V  
C
C
G
g1ss  
dss  
p
V
DS  
D
Output capacitance  
= 5 V, I = 10 mA, V  
V
DS  
D
Power gain  
= 5 V, I = 10 mA, V  
dB  
dB  
V
DS  
D
G2S  
G2S  
f = 800 MHz  
= 5 V, I = 10 mA, V  
-
-
26  
32  
-
-
V
DS  
D
f = 45 MHz  
Noise figure  
F
V
= 5 V, I = 10 mA, V  
= 4 V,  
= 4 V,  
DS  
D
G2S  
f = 800 MHz  
= 5 V, I = 10 mA, V  
-
1.2  
-
V
DS  
D
G2S  
f = 45 MHz  
-
-
0.8  
45  
-
-
Gain control range  
∆G  
p
V
= 5 V, V  
= 4...0 V  
DS  
G2S  
1)  
Cross-modulation , V = 5 V, R = 120 kΩ  
X
dBµV  
DS  
G1  
mod  
AGC = 0  
AGC = 10 dB  
AGC = 40 dB  
-
-
-
98  
96  
106  
-
-
-
1Input level for k = 1%; f = 50 MHz, f  
= 60 MHz  
unw  
w
2009-10-01  
3
BF5020...  
Total power dissipation P = ƒ(T )  
Total power dissipation P = ƒ(T )  
tot S  
tot  
S
BF5020W  
BF5020, BF5020R  
220  
mA  
220  
mW  
180  
160  
140  
120  
100  
80  
180  
160  
140  
120  
100  
80  
60  
60  
40  
40  
20  
20  
0
0
0
°C  
°C  
15 30 45 60 75 90 105 120  
150  
0
15 30 45 60 75 90 105 120  
150  
T
T
S
S
Output characteristics I = ƒ(V )  
Gate 1 current I = ƒ(V  
)
G1S  
D
DS  
G1  
V
V
= 5V  
DS  
= Parameter  
G2S  
20  
mA  
180  
1.5V  
µA  
16  
14  
12  
10  
8
140  
120  
100  
80  
1.4V  
1.3V  
4V  
3.5V  
3V  
2.5V  
2V  
1.2V  
1.1V  
60  
6
40  
4
20  
2
0
0
V
V
0
2
4
6
8
12  
0
0.5  
1
1.5  
2
3
G1S  
V
V
DS  
2009-10-01  
4
BF5020...  
Gate 1 forward transconductance  
Drain current I = ƒ(V  
)
G1S  
D
g = ƒ(I )  
V
V
= 5V  
= Parameter  
G2S  
fs  
D
DS  
V
= 5V, V  
= Parameter  
DS  
G2S  
50  
30  
mA  
4V  
mS  
40  
35  
30  
25  
20  
15  
10  
5
3V  
24  
22  
20  
18  
16  
14  
12  
10  
8
4 V  
3 V  
2 V  
1.5 V  
1 V  
2V  
6
1.5V  
4
2
0
0
mA  
V
0
5
10 15 20 25 30 35  
45  
0
0.2 0.4 0.6 0.8  
1
1.2 1.4  
1.8  
G1S  
I
V
D
Drain current I = ƒ(V  
)
Drain current I = ƒ(V  
)
GG  
D
GG  
D
V
= 5V, V  
= 4V, R = 120 kΩ  
V
R
= 4V  
= Parameter in kΩ  
DS  
G2S  
G1  
=gate1 supply voltage)  
G2S  
(connected to V  
, V  
GG GG  
G1  
16  
24  
mA  
68K  
82K  
mA  
20  
18  
16  
14  
12  
10  
8
12  
10  
8
100K  
120K  
150K  
180K  
6
4
6
4
2
2
0
0
0
V
V
1
2
3
5
0
1
2
3
4
6
=V  
V
V
GG  
GG DS  
2009-10-01  
5
BF5020...  
Drain current I = ƒ(V  
)
AGC characteristic AGC = ƒ(V  
)
G2S  
D
G2S  
V
= 5 V, R = Parameter in kΩ  
f = 50 MHz  
DS  
G1  
measured in test circuit, see page 7  
0
28  
mA  
Rg=120KOHm  
dB  
82K  
24  
22  
20  
18  
16  
14  
12  
10  
8
Rg=82KOHm  
-20  
120K  
-30  
-40  
-50  
-60  
-70  
-80  
6
4
2
0
V
V
0
0.5  
1
1.5  
2
2.5  
3
4
0.5  
1
1.5  
2
2.5  
3
4
V
G2S  
V
G2S  
AGC characteristic AGC = ƒ(V  
f = 800 MHz  
)
Crossmodulation V  
= (AGC)  
G2S  
unw  
V
= 5 V  
DS  
measured in test circuit, see page 7  
measured in test circuit, see page 7  
0
107  
dBµV  
dB  
RG1=82KOHm_22m  
Rg1=120KOHm  
Rg1=82KOHm  
-10  
-15  
-20  
-25  
-30  
-35  
-40  
-45  
-50  
-55  
-60  
-65  
-70  
104  
103  
102  
101  
100  
99  
RG1=120KOHm_15m  
98  
97  
96  
95  
94  
93  
92  
V
dB  
0.5  
1
1.5  
2
2.5  
3
4
0
5
10 15 20 25 30 35 40  
50  
V
G2S  
AGC  
2009-10-01  
6
BF5020...  
Test circuit for Crossmodulation / AGC  
VAGC  
VDS  
4n7  
R1  
10kΩ  
2.2 uH  
4n7  
4n7  
RL  
50Ω  
4n7  
RGEN  
50Ω  
50 Ω  
RG1  
VGG  
Semibiased  
2009-10-01  
7
Package SOT143  
BF5020...  
Package Outline  
0.1  
1
0.1  
2.9  
B
1.9  
0.1 MAX.  
4
3
1
2
A
0.2  
0.08...0.15  
+0.1  
0.8  
-0.05  
0...8˚  
+0.1  
0.4  
-0.05  
M
M
0.2  
0.25  
B
A
1.7  
Foot Print  
0.8 1.2 0.8  
1.2  
0.8  
0.8  
Marking Layout (Example)  
Manufacturer  
2005, June  
RF s  
Date code (YM)  
Pin 1  
BFP181  
Type code  
Standard Packing  
Reel ø180 mm = 3.000 Pieces/Reel  
Reel ø330 mm = 10.000 Pieces/Reel  
0.2  
4
3.15  
1.15  
Pin 1  
2009-10-01  
8
Package SOT143R  
BF5020...  
Package Outline  
0.1  
1
0.1  
2.9  
B
0.1 MAX.  
1.9  
4
1
3
2
A
0.2  
+0.1  
-0.05  
0.8  
+0.1  
-0.05  
0.4  
0˚...  
A
8˚  
1.7  
M
0.2  
M
0.25  
B
Foot Print  
0.8  
1.2  
0.8  
0.8 0.8  
1.2  
Marking Layout (Example)  
Reverse bar  
2005, June  
Date code (YM)  
Pin 1  
Manufacturer  
BFP181R  
Type code  
Standard Packing  
Reel ø180 mm = 3.000 Pieces/Reel  
Reel ø330 mm = 10.000 Pieces/Reel  
0.2  
4
3.15  
Pin 1  
1.15  
2009-10-01  
9
Package SOT343  
BF5020...  
Package Outline  
0.1  
0.9  
0.2  
2
0.1 MAX.  
0.1  
1.3  
A
4
1
3
2
0.15  
+0.1  
+0.1  
-0.05  
0.3  
0.15  
-0.05  
+0.1  
0.6  
4x  
-0.05  
M
0.2  
A
M
0.1  
Foot Print  
0.6  
1.15  
0.9  
Marking Layout (Example)  
Manufacturer  
2005, June  
Date code (YM)  
BGA420  
Type code  
Pin 1  
Standard Packing  
Reel ø180 mm = 3.000 Pieces/Reel  
Reel ø330 mm = 10.000 Pieces/Reel  
0.2  
4
2.15  
Pin 1  
1.1  
2009-10-01  
10  
BF5020...  
Edition 2006-02-01  
Published by  
Infineon Technologies AG  
81726 München, Germany  
© Infineon Technologies AG 2007.  
All Rights Reserved.  
Attention please!  
The information given in this dokument shall in no event be regarded as a guarantee  
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any  
examples or hints given herein, any typical values stated herein and/or any information  
regarding the application of the device, Infineon Technologies hereby disclaims any  
and all warranties and liabilities of any kind, including without limitation warranties of  
non-infringement of intellectual property rights of any third party.  
Information  
For further information on technology, delivery terms and conditions and prices  
please contact your nearest Infineon Technologies Office (www.infineon.com).  
Warnings  
Due to technical requirements components may contain dangerous substances.  
For information on the types in question please contact your nearest  
Infineon Technologies Office.  
Infineon Technologies Components may only be used in life-support devices or  
systems with the express written approval of Infineon Technologies, if a failure of  
such components can reasonably be expected to cause the failure of that  
life-support device or system, or to affect the safety or effectiveness of that  
device or system.  
Life support devices or systems are intended to be implanted in the human body,  
or to support and/or maintain and sustain and/or protect human life. If they fail,  
it is reasonable to assume that the health of the user or other persons  
may be endangered.  
2009-10-01  
11  

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