BF999 [INFINEON]
Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications); 硅N沟道MOSFET三极管（对于高频级高达300兆赫，优选在FM应用）
| 型号： | BF999 |
| 厂家： | 
Infineon |
| 描述： | Silicon N Channel MOSFET Triode (For high-frequency stages up to 300 MHz, preferably in FM applications) |
| 文件： | 总5页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Silicon N Channel MOSFET Triode
BF 999
● For high-frequency stages up to 300 MHz,
preferably in FM applications
Package1)
SOT-23
Type
Marking
Ordering Code
(tape and reel)
Pin Configuration
1
2
3
BF 999
LB
Q62702-F1132
G
D
S
Maximum Ratings
Parameter
Symbol
Values
20
Unit
Drain-source voltage
Drain current
V
DS
V
ID
30
mA
Gate-source peak current
Total power dissipation, TA ≤ 60 ˚C
Storage temperature range
Channel temperature
± IGSM
10
Ptot
200
mW
T
stg
ch
– 55 … + 150 ˚C
150
T
Thermal Resistance
Junction - ambient 2)
Rth JA
≤ 450
K/W
1)
For detailed information see chapter Package Outlines.
Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
2)
07.94
Semiconductor Group
1
BF 999
Electrical Characteristics
at T = 25 ˚C, unless otherwise specified.
A
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC Characteristics
Drain-source breakdown voltage
ID = 10 µA, – VGS = 4 V
V
(BR) DS
20
6.5
–
–
–
–
–
–
–
V
Gate-source breakdown voltage
± IGS = 10 mA, VDS = 0
± V(BR) GSS
± IGSS
12
50
18
2.5
Gate-source leakage current
± VGS = 5 V, VDS = 0
nA
mA
V
Drain current
IDSS
5
VDS = 10 V, VGS = 0
Gate-source pinch-off voltage
= 20 µA
– VGS (p)
–
V
DS = 10 V, I
D
AC Characteristics
Forward transconductance
g
fs
14
–
16
2.5
25
1
–
–
–
–
–
mS
pF
fF
V
DS = 10 V, I
D
= 10 mA, f = 1 kHz
Gate input capacitance
= 10 mA, f = 1 MHz
Reverse transfer capacitance
= 10 mA, f = 1 MHz
Output capacitance
C
C
C
gss
VDS = 10 V, I
D
dg
–
VDS = 10 V, I
D
dss
–
pF
dB
V
DS = 10 V, I
D
= 10 mA, f = 1 MHz
Power gain
(test circuit)
G
p
–
25
V
DS = 10 V, I
D
= 10 mA, f = 200 MHz,
G
G
= 2 mS, G = 0.5 mS
L
Noise figure (test circuit)
= 10 mA, f= 200 MHz,
= 0.5 mS
F
–
1
–
V
G
DS = 10 V, I
D
G
= 2 mS, G
L
Semiconductor Group
2
BF 999
Total power dissipation Ptot = f (T
A
)
Output characteristics I = f (VDS)
D
Gate transconductance gfs = f (VGS
)
Drain current I = f (VGS)
D
VDS = 10 V, IDSS = 10 mA, f = 1 kHz
VDS = 10 V
Semiconductor Group
3
BF 999
Gate input capacitance Cgss = f (VGS
)
Output capacitance Cdss = f (VDS
)
V
DS = 10 V, IDSS = 10 mA, f = 1 MHz
VGS = 0, IDSS = 10 mA, f = 1 MHz
Reverse transfer capacitance
Gate input admittance y11s
C
dg = f (VDS
)
VDS = 10 V, VGS = 0,
IDSS = 10 mA, f = 1 MHz, VGS = 0
IDSS = 10 mA, (common-source)
Semiconductor Group
4
BF 999
Gate forward transfer admittance y21s
Output admittance y22s
DS = 10 V, VGS = 0,
DSS = 10 mA, (common-source)
VDS = 10 V, VGS = 0,
V
I
IDSS = 10 mA, (common-source)
Test circuit for power gain and noise figure
f= 200 MHz
Semiconductor Group
5
相关型号：
BF999E6327
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
INFINEON
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