BFG19S [INFINEON]
NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna); NPN硅RF晶体管（对于低噪声，天线低失真宽带放大器）
| 型号： | BFG19S |
| 厂家： | 
Infineon |
| 描述： | NPN Silicon RF Transistor (For low noise, low distortion broadband amplifiers in antenna) |
| 文件： | 总6页 (文件大小：53K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BFG 19S
NPN Silicon RF Transistor
• For low noise, low distortion broadband
amplifiers in antenna and
telecommunications systems up to 1.5GHz
at collector currents from 10 mA to 70 mA
• CECC-type available: CECC 50 002/259
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Marking Ordering Code
Pin Configuration
Package
BFG 19S
BFG19S Q62702-F1359
1 = E 2 = B 3 = E 4 = C SOT-223
Maximum Ratings
Parameter
Symbol
Values
15
Unit
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
V
V
V
V
CEO
CES
CBO
EBO
20
20
3
I
I
100
12
mA
W
C
Base current
B
Total power dissipation
P
tot
≤
T
75 °C
1
S
Junction temperature
Ambient temperature
Storage temperature
T
T
T
150
°C
j
- 65 ... + 150
- 65 ... + 150
A
stg
Thermal Resistance
1)
Junction - soldering point
R
≤ 75
K/W
thJS
1) T is measured on the collector lead at the soldering point to the pcb.
S
Semiconductor Group
1
Dec-13-1996
BFG 19S
Electrical Characteristics at T = 25°C, unless otherwise specified.
A
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
V
V
(BR)CEO
I = 1 mA, I = 0
15
-
-
C
B
Collector-emitter cutoff current
= 20 V, V = 0
I
I
I
µA
nA
µA
-
CES
V
-
-
100
100
10
CE
BE
Collector-base cutoff current
= 10 V, I = 0
CBO
V
-
-
CB
E
Emitter-base cutoff current
= 2 V, I = 0
EBO
V
-
-
EB
C
DC current gain
I = 70 mA, V = 8 V
h
FE
40
100
220
C
CE
Semiconductor Group
2
Dec-13-1996
BFG 19S
Electrical Characteristics at T = 25°C, unless otherwise specified.
A
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Transition frequency
f
GHz
pF
T
I = 70 mA, V = 8 V, f = 500 MHz
4
-
5.5
-
C
CE
Collector-base capacitance
= 10 V, f = 1 MHz
C
C
C
F
cb
ce
eb
V
0.85
0.4
1.4
CB
Collector-emitter capacitance
= 10 V, f = 1 MHz
V
-
-
-
CE
Emitter-base capacitance
= 0.5 V, f = 1 MHz
V
-
4.6
EB
Noise figure
dB
I = 20 mA, V = 8 V, Z = Z
C
CE
S
Sopt
Sopt
f = 900 MHz
-
-
2.5
4
-
-
f = 1.8 GHz
Power gain
2)
G
ma
I = 70 mA, V = 8 V, Z = Z
C
CE
S
Z = Z
L
Lopt
f = 900 MHz
f = 1.8 GHz
-
-
13.5
8
-
-
2
Transducer gain
|S |
21e
Ω
I = 30 mA, V = 8 V, Z =Z = 50
C
CE
S
L
f = 900 MHz
-
-
11
5
-
-
f = 1.8 GHz
Third order intercept point
I = 70 mA, V = 8 V, f = 900 MHz
IP
dBm
3
C
CE
Ω
Z =Z = 50
-
35
-
S
L
2
1/2
2) G = |S /S | (k-(k -1) )
ma
21 12
Semiconductor Group
3
Dec-13-1996
BFG 19S
Total power dissipation P = f (T *, T )
tot
A
S
* Package mounted on epoxy
1200
mW
1000
Ptot
900
800
700
600
500
TS
TA
400
300
200
100
0
0
20
40
60
80
100 120 °C 150
TA,TS
Permissible Pulse Load R
= f (t )
Permissible Pulse Load P
/P
= f (t )
thJS
p
totmax totDC p
10 2
10 2
R
Ptotmax/PtotDC
-
thJS K/W
D = 0
0.005
0.01
0.02
0.05
0.1
10 1
10 1
0.2
0.5
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
10 0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1s 10 0
tp
10 0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1s 10 0
tp
Semiconductor Group
4
Dec-13-1996
BFG 19S
Collector-base capacitance C = f (V )
Transition frequency f = f (I )
cb
CB
T
C
V
BE
= v = 0, f = 1MHz
be
V
= Parameter
CE
6.0
GHz
5.0
4.5
4.0
3.5
3.0
2.5
2.0
2.6
pF
5V
3V
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Ccb
fT
2V
1V
0.7V
1.5
1.0
0.2
0.0
0
4
8
12
16
V
VR
22
0
20
40
60
80
mA
IC
120
Power Gain G , G = f(I )
Power Gain G , G = f(I )
ma ms C
ma
ms
C
f = 0.9GHz
= Parameter
f = 1.8GHz
V = Parameter
CE
V
CE
14
dB
10
8
10
dB
6
10V
5V
3V
10V
5V
3V
G
G
2V
2V
4
1V
1V
6
2
0.7V
4
2
0
0.7V
-2
0
20
40
60
80
mA
IC
120
0
20
40
60
80
mA
IC
120
Semiconductor Group
5
Dec-13-1996
BFG 19S
Power Gain G , G = f(V ):_____
Intermodulation Intercept Point IP =f(I )
ma
ms
CE
3
C
2
|S | = f(V ):---------
(3rd order, Output, Z =Z =50 )
Ω
S L
21
CE
f = Parameter
V
= Parameter, f = 900MHz
CE
14
40
0.9GHz
0.9GHz
IC=70mA
dB
10
8
8V
dBm
30
G
IP3
5V
3V
1.8GHz
1.8GHz
25
2V
6
20
4
1V
15
2
0
10
0
2
4
6
8
V
12
0
20
40
60
80
mA
IC
120
VCE
2
Power Gain G , G = f(f)
Power Gain |S | = f(f)
21
ma
ms
V
= Parameter
V
= Parameter
CE
CE
32
36
IC=70mA
dB
IC=70mA
dB
28
24
20
16
12
8
24
20
16
12
8
G
S21
4
10V
0
2V
10V
2V
1V
0.7V
4
0
-4
-8
1V
0.7V
0.0
0.5
1.0
1.5
2.0
2.5
GHz 3.5
f
0.0
0.5
1.0
1.5
2.0
2.5
GHz 3.5
f
Semiconductor Group
6
Dec-13-1996
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