BFN17 [INFINEON]

PNP Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage); PNP硅高压晶体管（适用于视频输出级中的电视机和开关电源的高击穿电压）的


型号：	BFN17
厂家：	Infineon
描述：	PNP Silicon High-Voltage Transistors (Suitable for video output stages in TV sets and switching power supplies High breakdown voltage) PNP硅高压晶体管（适用于视频输出级中的电视机和开关电源的高击穿电压）的晶体开关晶体管电视高压
文件：	总4页 (文件大小：142K)
中文：	中文翻译
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PNP Silicon High-Voltage Transistors

BFN 17

BFN 19

● Suitable for video output stages in TV sets

and switching power supplies

● High breakdown voltage

● Low collector-emitter saturation voltage

● Complementary types: BFN 16, BFN 18 (NPN)

Package¹⁾

Type

Marking

Ordering Code

(tape and reel)

Pin Configuration

BFN 17

BFN 19

Q62702-F884

Q62702-F1057

SOT-89

Maximum Ratings

Parameter

Symbol

Values

Unit

BFN 17

250

BFN 19

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

CE0

CB0

EB0

300

250

300

200

500

100

200

Peak collector current

Base current

Peak base current

Total power dissipation, T

=130 ˚C

Ptot

Junction temperature

150

˚C

Storage temperature range

Tstg

– 65 … + 150

Thermal Resistance

Junction - ambient²⁾

th JA

th JS

≤ 75

≤ 20

K/W

Junction - soldering point

For detailed information see chapter Package Outlines.

Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm²Cu.

5.91

Semiconductor Group

BFN 17

BFN 19

Electrical Characteristics

at T = 25 ˚C, unless otherwise specified.

Parameter

Symbol

Values

typ.

Unit

min.

max.

DC characteristics

Collector-emitter breakdown voltage

V(BR)CE0

V(BR)CB0

V(BR)EB0

= 1 mA

BFN 17

BFN 19

250

300

–

Collector-base breakdown voltage

= 100 µA

BFN 17

BFN 19

250

300

–

Emitter-base breakdown voltage

= 100 µA

–

Collector-base cutoff current

ICB0

CB = 200 V

CB = 250 V

CB = 200 V, T

CB = 250 V, T

BFN 17

BFN 19

BFN 17

BFN 19

–

100

µA

= 150 ˚C

Emitter-base cutoff current

IEB0

–

100

VEB = 3 V

DC current gain

–

= 1 mA, VCE = 10 V

= 10 mA, VCE = 10 V¹⁾

= 30 mA, VCE = 10 V¹⁾

–

BFN 17

BFN 19

Collector-emitter saturation voltage¹⁾

CEsat

BEsat

–

0.4

0.5

= 20 mA, I

= 2 mA

BFN 17

BFN 19

Base-emitter saturation voltage¹⁾

= 20 mA, I = 2 mA

–

0.9

AC characteristics

Transition frequency

–

100

2.5

–

MHz

= 20 mA, VCE = 10 V, f = 20 MHz

Output capacitance

obo

VCB = 30 V, f = 1 MHz

Pulse test conditions: t ≤ 300 µs, D = 2 %.

Semiconductor Group

BFN 17

BFN 19

Total power dissipation Ptot = f (T

*; TS

)

Operating range I

= f (VCE0)

* Package mounted on epoxy

= 25 ˚C, D = 0

Permissible pulse load P^{tot max}/Ptot DC = f (t

)

Collector current I = f (VBE)

VCE = 10 V

Semiconductor Group

BFN 17

BFN 19

Transition frequency f

= f (I

)

Collector cutoff current ICB0 = f (T

VCB = 200 V

)

CE = 10 V

DC current gain h^FE= f (I )

CE = 10 V

Semiconductor Group

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