BFP840ESD [INFINEON]
BFP840ESD 是专为高性能 5 GHz 频带应用设计的异质结双极晶体管 (HBT)。;
| 型号： | BFP840ESD |
| 厂家： | 
Infineon |
| 描述： | BFP840ESD 是专为高性能 5 GHz 频带应用设计的异质结双极晶体管 (HBT)。 晶体管 |
| 文件： | 总22页 (文件大小：554K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BFP840ESD
SiGe:C NPN RF bipolar transistor
Product description
The BFP840ESD is a discrete RF heterojunction bipolar transistor (HBT) with an
integrated ESD protection suitable for 5 GHz band applications.
Feature list
•
Unique combination of high end RF performance and robustness: 20 dBm maximum RF input power,
1.5 kV HBM ESD hardness
•
High transition frequency fT = 80 GHz to enable low noise figure at high frequencies:
NFmin = 0.85 dB at 5.5 GHz, 1.8 V, 5 mA
•
•
•
High gain Gms = 22.5 dB at 5.5 GHz, 1.8 V, 10 mA
OIP3 = 22 dBm at 5.5 GHz, 1.8 V, 10 mA
Suitable for low voltage applications e.g. VCC = 1.2 V and 1.8 V (2.85 V, 3.3 V, 3.6 V require a corresponding
collector resistor)
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Potential applications
•
•
Mobile and fixed connectivity applications: WLAN, WiMAX and UWB
Satellite communication systems: satellite radio (SDARs, DAB), navigation systems (e.g. GPS, GLONASS,
BeiDou, Galileo)
Device information
Table 1
Part information
Product name / Ordering code
Package
Pin configuration
Marking
Pieces / Reel
BFP840ESD / BFP840ESDH6327XTSA1 SOT343
1 = B 2 = E 3 = C 4 = E T8s
3000
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Datasheet
www.infineon.com
Please read the Important Notice and Warnings at the end of this document
v2.0
2018-09-26
BFP840ESD
SiGe:C NPN RF bipolar transistor
Table of contents
Table of contents
Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
1
2
3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
General AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Frequency dependent AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6
Characteristic DC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Characteristic AC diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
3.1
3.2
3.3
3.4
3.5
4
Package information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .20
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
Datasheet
2
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BFP840ESD
SiGe:C NPN RF bipolar transistor
Absolute maximum ratings
1
Absolute maximum ratings
Table 2
Absolute maximum ratings at TA = 25 °C (unless otherwise specified)
Parameter
Symbol
VCEO
Values
Min. Max.
2.25
Unit Note or test condition
Collector emitter voltage
Collector base voltage 1)
Collector emitter voltage 2)
–
V
Open base
2.0
2.9
2.6
2.25
2.0
TA = -55 °C, open base
Open emitter
VCBO
TA = -55 °C, open emitter
E-B short circuited
VCES
TA = -55 °C,
E-B short circuited
Base current
IB
-5
–
3
mA
–
Collector current
RF input power
ESD stress pulse
IC
35
20
1.5
PRFin
VESD
–
dBm
kV
-1.5
HBM, all pins, acc. to
JESD22-A114
Total power dissipation 3)
Junction temperature
Storage temperature
Ptot
TJ
–
75
mW TS ≤ 108 °C
°C
–
150
–
TStg
-55
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Exceeding only one of these values may cause irreversible damage to the integrated
circuit.
1
VCBO is similar to VCEO due to design.
VCES is identical to VCEO due to design.
TS is the soldering point temperature. TS is measured on the emitter lead at the soldering point of the PCB.
2
3
Datasheet
3
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BFP840ESD
SiGe:C NPN RF bipolar transistor
Thermal characteristics
2
Thermal characteristics
Table 3
Thermal resistance
Parameter
Symbol
Values
Unit Note or test condition
Min. Typ. Max.
Junction - soldering point
RthJS
–
551
–
K/W
–
80
70
60
50
40
30
20
10
0
0
25
50
75
TS [°C]
100
125
150
Figure 1
Total power dissipation Ptot = f(TS)
Datasheet
4
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BFP840ESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
3
Electrical characteristics
3.1
DC characteristics
Table 4
DC characteristics at TA = 25 °C
Parameter
Symbol
Values
Unit Note or test condition
Min. Typ. Max.
Collector emitter breakdown voltage
Collector emitter leakage current
Collector base leakage current
Emitter base leakage current
DC current gain
V(BR)CEO 2.25 2.6
–
V
IC = 1 mA, IB = 0,
open base
ICES
ICBO
IEBO
hFE
–
–
400 1) nA
400 1)
VCE = 1.5 V, VBE = 0,
E-B short circuited
VCB = 1.5 V, IE = 0,
open emitter
10 1) μA
450
VEB = 0.5 V, IC = 0,
open collector
150
260
VCE = 1.8 V, IC = 10 mA,
pulse measured
3.2
General AC characteristics
Table 5
General AC characteristics at TA = 25 °C
Parameter
Symbol
Values
Unit Note or test condition
Min. Typ. Max.
Transition frequency
fT
–
80
–
GHz VCE = 1.8 V, IC = 25 mA,
f = 2 GHz
Collector base capacitance
CCB
37
fF
VCB = 1.8 V, VBE = 0,
f = 1 MHz,
emitter grounded
Collector emitter capacitance
Emitter base capacitance
CCE
0.40
0.41
pF
VCE = 1.8 V, VBE = 0,
f = 1 MHz,
base grounded
CEB
VEB = 0.4 V, VCB = 0,
f = 1 MHz,
collector grounded
1
Maximum values not limited by the device but by the short cycle time of the 100% test
Datasheet
5
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BFP840ESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
3.3
Frequency dependent AC characteristics
Measurement setup is a test fixture with Bias-T’s in a 50 Ω system, TA = 25 °C.
VC
Top View
Bias-T
OUT
E
C
E
VB
B
Bias-T
(Pin 1)
IN
Figure 2
Testing circuit
AC characteristics, VCE = 1.8 V, f = 0.45 GHz
Table 6
Parameter
Symbol
Values
Min. Typ. Max.
Unit Note or test condition
Power gain
•
•
Maximum power gain
Transducer gain
Gms
–
–
–
33.5
27.5
–
–
–
dB
dB
IC = 10 mA
IC = 5 mA
|S21|2
Noise figure
•
•
Minimum noise figure
Associated gain
NFmin
Gass
0.6
26.5
Linearity
•
•
3rd order intercept point at output
1 dB gain compression point at output OP1dB
OIP3
19.5
4
dBm ZS = ZL = 50 Ω, IC = 10 mA
Datasheet
6
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BFP840ESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
Table 7
AC characteristics, VCE = 1.8 V, f = 0.9 GHz
Parameter
Symbol
Values
Unit Note or test condition
Min. Typ. Max.
Power gain
•
•
Maximum power gain
Transducer gain
Gms
–
–
–
30
27
–
–
–
dB
dB
IC = 10 mA
IC = 5 mA
|S21|2
Noise figure
•
•
Minimum noise figure
Associated gain
NFmin
Gass
0.6
25.5
Linearity
•
•
3rd order intercept point at output
1 dB gain compression point at output OP1dB
OIP3
19.5
4
dBm ZS = ZL = 50 Ω, IC = 10 mA
Table 8
AC characteristics, VCE = 1.8 V, f = 1.5 GHz
Parameter
Symbol
Values
Unit Note or test condition
Min. Typ. Max.
Power gain
•
•
Maximum power gain
Transducer gain
Gms
–
–
–
28
25.5
–
–
–
dB
dB
IC = 10 mA
IC = 5 mA
|S21|2
Noise figure
•
•
Minimum noise figure
Associated gain
NFmin
Gass
0.65
24
Linearity
•
•
3rd order intercept point at output
1 dB gain compression point at output OP1dB
OIP3
19.5
4
dBm ZS = ZL = 50 Ω, IC = 10 mA
Table 9
AC characteristics, VCE = 1.8 V, f = 1.9 GHz
Parameter
Symbol
Values
Unit Note or test condition
Min. Typ. Max.
Power gain
•
•
Maximum power gain
Transducer gain
Gms
–
–
–
27
25
–
–
–
dB
dB
IC = 10 mA
IC = 5 mA
|S21|2
Noise figure
•
•
Minimum noise figure
Associated gain
NFmin
Gass
0.65
23
Linearity
•
•
3rd order intercept point at output
1 dB gain compression point at output OP1dB
OIP3
21
4.5
dBm ZS = ZL = 50 Ω, IC = 10 mA
Datasheet
7
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BFP840ESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
Table 10
AC characteristics, VCE = 1.8 V, f = 2.4 GHz
Parameter
Symbol
Values
Unit Note or test condition
Min. Typ. Max.
Power gain
•
•
Maximum power gain
Transducer gain
Gms
–
–
–
26
24
–
–
–
dB
dB
IC = 10 mA
IC = 5 mA
|S21|2
Noise figure
•
•
Minimum noise figure
Associated gain
NFmin
Gass
0.7
22
Linearity
•
•
3rd order intercept point at output
1 dB gain compression point at output OP1dB
OIP3
21
4
dBm ZS = ZL = 50 Ω, IC = 10 mA
Table 11
AC characteristics, VCE = 1.8 V, f = 3.5 GHz
Parameter
Symbol
Values
Unit Note or test condition
Min. Typ. Max.
Power gain
•
•
Maximum power gain
Transducer gain
Gms
–
–
–
24.5
22
–
–
–
dB
dB
IC = 10 mA
IC = 5 mA
|S21|2
Noise figure
•
•
Minimum noise figure
Associated gain
NFmin
Gass
0.7
20
Linearity
•
•
3rd order intercept point at output
1 dB gain compression point at output OP1dB
OIP3
22.5
5
dBm ZS = ZL = 50 Ω, IC = 10 mA
Table 12
AC characteristics, VCE = 1.8 V, f = 5.5 GHz
Parameter
Symbol
Values
Unit Note or test condition
Min. Typ. Max.
Power gain
•
•
Maximum power gain
Transducer gain
Gms
–
–
–
22.5
18.5
–
–
–
dB
dB
IC = 10 mA
IC = 5 mA
|S21|2
Noise figure
•
•
Minimum noise figure
Associated gain
NFmin
Gass
0.85
17
Linearity
•
•
3rd order intercept point at output
1 dB gain compression point at output OP1dB
OIP3
22
5
dBm ZS = ZL = 50 Ω, IC = 10 mA
Datasheet
8
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BFP840ESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
Table 13
AC characteristics, VCE = 1.8 V, f = 10 GHz
Parameter
Symbol
Values
Unit Note or test condition
Min. Typ. Max.
Power gain
•
•
Maximum power gain
Transducer gain
Gms
–
–
–
17
12
–
–
–
dB
dB
IC = 10 mA
IC = 5 mA
|S21|2
Noise figure
•
•
Minimum noise figure
Associated gain
NFmin
Gass
1.2
12.5
Linearity
•
•
3rd order intercept point at output
1 dB gain compression point at output OP1dB
OIP3
19.5
2.5
dBm ZS = ZL = 50 Ω, IC = 10 mA
Table 14
AC characteristics, VCE = 1.8 V, f = 12 GHz
Parameter
Symbol
Values
Unit Note or test condition
Min. Typ. Max.
Power gain
•
•
Maximum power gain
Transducer gain
Gms
–
–
–
15.5
9.5
–
–
–
dB
dB
IC = 10 mA
IC = 5 mA
|S21|2
Noise figure
•
•
Minimum noise figure
Associated gain
NFmin
Gass
1.45
11
Linearity
•
•
3rd order intercept point at output
1 dB gain compression point at output OP1dB
OIP3
18.5
1.5
dBm ZS = ZL = 50 Ω, IC = 10 mA
Note:
Gms = IS21 / S12I for k < 1; Gma = IS21 / S12 I(k-(k2-1)1/2) for k > 1. In order to get the NFmin values stated in
this chapter, the test fixture losses have been subtracted from all measured results. OIP3 value
depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50 Ω from 0.2 MHz to 12 GHz.
Datasheet
9
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BFP840ESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
3.4
Characteristic DC diagrams
18
16
14
12
10
8
IB = 70µA
IB = 60µA
IB = 50µA
IB = 40µA
IB = 30µA
IB = 20µA
IB = 10µA
6
4
2
0
0
0.5
1
1.5
2
2.5
3
VCE [V]
Figure 3
Collector current vs. collector emitter voltage IC = f(VCE), IB = parameter
103
102
10−2
10−1
100
101
102
IC [mA]
Figure 4
DC current gain hFE = f(IC), VCE = 1.8 V
Datasheet
10
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BFP840ESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
102
101
100
10−1
10−2
10−3
10−4
10−5
0.5
0.6
0.7
0.8
0.9
VBE [V]
Figure 5
Collector current vs. base emitter forward voltage IC = f(VBE), VCE = 1.8 V
100
10−1
10−2
10−3
10−4
10−5
10−6
10−7
0.5
0.6
0.7
0.8
0.9
VBE [V]
Figure 6
Base current vs. base emitter forward voltage IB = f(VBE), VCE = 1.8 V
Datasheet
11
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BFP840ESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
10−6
10−7
10−8
10−9
10−10
10−11
0.3
0.4
0.5
0.6
0.7
VEB [V]
Figure 7
Base current vs. base emitter reverse voltage IB = f(VEB), VCE = 1.8 V
Datasheet
12
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BFP840ESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
3.5
Characteristic AC diagrams
80
75
70
65
60
55
50
45
40
35
30
25
20
15
10
5
2.00V
1.80V
1.50V
1.00V
0.50V
0
0
5
10
15
20
25
30
35
40
IC [mA]
Figure 8
Transition frequency fT = f(IC), f = 2 GHz, VCE = parameter
26
24
22
20
18
16
14
1.5V, 2400MHz
12
10
8
1.8V, 2400MHz
1.5V, 5500MHz
1.8V, 5500MHz
6
4
2
0
0
5
10
15
20
25
30
IC [mA]
Figure 9
3rd order intercept point at output OIP3 = f(IC), ZS = ZL= 50 Ω, VCE, f = parameters
Datasheet
13
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BFP840ESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
25
20
15
10
20
19
5
1
1.2
1.4
1.6
1.8
2
V
CE [V]
Figure 10
3rd order intercept point at output OIP3 [dBm] = f(IC, VCE), ZS = ZL= 50 Ω, f = 5.5 GHz
25
20
15
10
2
1
0
−1
5
1
1.2
1.4
1.6
1.8
2
V
CE [V]
Figure 11
Compression point at output OP1dB [dBm] = f(IC, VCE), ZS = ZL= 50 Ω, f = 5.5 GHz
Datasheet
14
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BFP840ESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
0.05
0.045
0.04
0.035
0.03
0
0.2 0.4 0.6 0.8
1
1.2 1.4 1.6 1.8
2
VCB [V]
Figure 12
Collector base capacitance CCB = f(VCB), f = 1 MHz
40
35
30
Gms
25
Gma
20
|S21|2
15
10
5
0
1
2
3
4
5
6
7
8
9
10 11 12
f [GHz]
Figure 13
Gain Gma, Gms, IS21I2 = f(f), VCE = 1.8 V, IC = 10 mA
Datasheet
15
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BFP840ESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
39
36
33
30
27
24
21
18
15
12
9
0.45GHz
0.90GHz
1.50GHz
1.90GHz
2.40GHz
3.50GHz
5.50GHz
10.00GHz
12.00GHz
0
5
10
15
20
25
30
35
40
45
IC [mA]
Figure 14
Maximum power gain Gmax = f(IC), VCE = 1.8 V, f = parameter in GHz
39
36
0.45GHz
0.90GHz
33
30
1.50GHz
1.90GHz
2.40GHz
3.50GHz
27
24
21
18
15
12
9
5.50GHz
10.00GHz
12.00GHz
0
0.5
1
1.5
2
2.5
3
V
CE [V]
Figure 15
Maximum power gain Gmax = f(VCE), IC = 10 mA, f = parameter in GHz
Datasheet
16
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BFP840ESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
1
1.5
0.5
2
12.0
12.0
11.0
11.0
0.4
0.3
10.0
8.0
3
10.0
9.0
9.0
4
0.2
0.1
5
8.0
0.03 to 12 GHz
7.0
6.0
10
7.0
0.1 0.2 0.3 0.4 0.5
5.0
1
1.5
2
3
4
5
0
0.03
0.03
6.0
4.0
−0.1
−10
5.0
3.0
−0.2
−5
−4
2.0
1.0
1.0
4.0
1.0
2.0
−0.3
−3
3.0
2.0
−0.4
5mA
−0.5
−2
10mA
15mA
−1.5
−1
Figure 16
Input reflection coefficient S11 = f(f), VCE = 1.8 V, IC = 5 / 10 / 15 mA
1
1.5
0.5
2
0.4
3
0.3
4
0.2
5
3.5
2.4
5.5
0.1
10
1.9
1.5
0.9
3.5
2.4
5.5
0.1 0.2 0.3 0.4 0.5
1
1.5
2
0.5
3
4
5
0
0.5
3.5
5.5
0.5
−0.1
−10
8.0
8.0
−0.2
−5
−4
10.0
12.0
10.0
12.0
−0.3
−3
5mA
−0.4
10mA
15mA
−0.5
−2
−1.5
−1
Figure 17
Source impedance for minimum noise figure ZS,opt = f(f), VCE = 1.8 V, IC = 5 / 10 / 15 mA
Datasheet
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BFP840ESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
1
1.5
0.5
2
0.4
0.3
12.0
3
12.0
11.0
10.0
11.0
10.0
4
0.2
0.1
5
0.03 to 12 GHz
9.0
9.0
8.0
10
8.0
0.1 0.2 0.3 0.4 0.5
1
1.5
2
3
4 5
0
7.0
6.0
0.03
7.0
−0.1
−10
6.0
5.0
4.0
1.0
−0.2
5.0
−5
3.0
1.0
−4
2.0
4.0
−0.3
−3
2.0
3.0
−0.4
5mA
−0.5
−2
10mA
15mA
−1.5
−1
Figure 18
Output reflection coefficient S22 = f(f), VCE = 1.8 V, IC = 5 / 10 / 15 mA
2
1.8
1.6
1.4
1.2
1
0.8
IC = 15mA
IC = 10mA
IC = 5mA
0.6
0.4
0.2
0
0
2
4
6
8
10
12
f [GHz]
Figure 19
Noise figure NFmin = f(f), VCE = 1.8 V, ZS = ZS,opt, IC = 5 / 10 / 15 mA
Datasheet
18
v2.0
2018-09-26
BFP840ESD
SiGe:C NPN RF bipolar transistor
Electrical characteristics
2
1.8
1.6
1.4
1.2
1
f = 12GHz
f = 10GHz
f = 5.5GHz
f = 3.5GHz
f = 2.4GHz
f = 0.9GHz
0.8
0.6
0.4
0.2
0
0
5
10
15
20
IC [mA]
Figure 20
Noise figure NFmin = f(IC), VCE = 1.8 V, ZS = Zopt, f = parameter in GHz
3.4
f = 12GHz
f = 10GHz
f = 5.5GHz
f = 3.5GHz
f = 2.4GHz
f = 0.9GHz
3.2
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
5
10
15
20
IC [mA]
Figure 21
Noise figure NF50 = f(IC), VCE = 1.8 V, ZS = 50 Ω, f = parameter in GHz
Note:
The curves shown in this chapter have been generated using typical devices but shall not be
considered as a guarantee that all devices have identical characteristic curves. TA = 25 °C.
Datasheet
19
v2.0
2018-09-26
BFP840ESD
SiGe:C NPN RF bipolar transistor
Package information SOT343
4
Package information SOT343
1.25±0.1
A
0.1
0.1 MIN.
0.2
2.1±0.1
A
MOLD FLASH, PROTRUSION OR GATE BURRS OF 0.2 MM MAXIMUM PER SIDE ARE NOT INCLUDED
ALL DIMENSIONS ARE IN UNITS MM
THE DRAWING IS IN COMPLIANCE WITH ISO 128 & PROJECTION METHOD 1 [
]
Figure 22
Package outline
Figure 23
Figure 24
Foot print
TYPE CODE
NOTE OF MANUFACTURER
MONTH
YEAR
Marking layout example
4
2
0.2
PIN 1
2.15
1.1
INDEX MARKING
ALL DIMENSIONS ARE IN UNITS MM
THE DRAWING IS IN COMPLIANCE WITH ISO 128 & PROJECTION METHOD 1
[
]
Figure 25
Tape dimensions
Datasheet
20
v2.0
2018-09-26
BFP840ESD
SiGe:C NPN RF bipolar transistor
Revision history
Revision history
Document
version
Date of
release
Description of changes
2.0
2018-09-26
New datasheet layout.
Datasheet
21
v2.0
2018-09-26
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Edition 2018-09-26
Published by
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