BFR705L3RH [INFINEON]
RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, X Band, Silicon Germanium, NPN, 0.32 MM HEIGHT, ROHS COMPLIANT, FLAT LEADLESS, TSLP-3-9, 3 PIN;
| 型号： | BFR705L3RH |
| 厂家： | 
Infineon |
| 描述： | RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, X Band, Silicon Germanium, NPN, 0.32 MM HEIGHT, ROHS COMPLIANT, FLAT LEADLESS, TSLP-3-9, 3 PIN 放大器 晶体管 |
| 文件： | 总7页 (文件大小：62K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BFR705L3RH
NPN Silicon Germanium RF Transistor*
• High gain ultra low noise RF transistor
for low current operation
3
1
• Ideal for low power consumption LNA design
• Provides outstanding performance for
a wide range of wireless applications
up to 10 GHz and more
2
• Outstanding noise figure F = 0.5 dB at 1.8 GHz
Outstanding noise figure F = 0.8 dB at 6 GHz
• High maximum stable and available gain at only 7mA
G
= 25 dB at 1.8 GHz, G = 18 dB at 6 GHz
ma
ms
• 150 GHz f -Silicon Germanium technology
T
• Extremely small and flat leadless package,
height 0.32 mm max.
1)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
* Short term description
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
Marking
Pin Configuration
2=C 3=E
Package
BFR705L3RH
R1
TSLP-3-9
1=B
1Pb-containing package may be available upon special request
2007-03-30
1
BFR705L3RH
Maximum Ratings
Parameter
Symbol
Value
Unit
V
Collector-emitter voltage
V
CEO
T > 0°C
4
A
T ≤ 0°C
3.5
A
13
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
V
V
V
CES
CBO
EBO
13
1.2
10
1
mA
I
I
C
Base current
B
1)
40
mW
°C
Total power dissipation , T ≤ 123 °C
P
T
T
T
S
tot
j
150
Junction temperature
Ambient temperature
Storage temperature
-65 ... 150
-65 ... 150
A
stg
Thermal Resistance
Parameter
Symbol
Value
Unit
2)
K/W
Junction - soldering point
R
≤ 665
thJS
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
typ. max.
Unit
min.
DC Characteristics
4
4.7
-
V
Collector-emitter breakdown voltage
V
(BR)CEO
I = 1 mA, I = 0
C
B
-
-
30
µA
Collector-emitter cutoff current
= 13 V, V = 0
I
CES
V
CE
BE
-
-
-
-
100 nA
Collector-base cutoff current
= 5 V, I = 0
I
CBO
V
CB
E
1
µA
-
Emitter-base cutoff current
= 0.5 V, I = 0
I
EBO
V
EB
C
160
250
400
DC current gain
I = 7 mA, V = 3 V, pulse measured
h
FE
C
CE
1T is measured on the collector lead at the soldering point to the pcb
S
2For calculation of R
please refer to Application Note Thermal Resistance
thJA
2007-03-30
2
BFR705L3RH
Electrical Characteristics at T = 25°C, unless otherwise specified
Parameter
Symbol
Values
typ. max.
Unit
min.
AC Characteristics (verified by random sampling)
-
39
-
GHz
Transition frequency
f
T
I = 7 mA, V = 3 V, f = 1 GHz
C
CE
-
-
-
0.04
0.08 pF
Collector-base capacitance
= 3 V, f = 1 MHz, V = 0 ,
C
C
C
F
cb
ce
eb
V
CB
BE
emitter grounded
0.15
0.18
-
-
Collector emitter capacitance
V
= 3 V, f = 1 MHz, V = 0 ,
BE
CE
base grounded
Emitter-base capacitance
V
= 0.5 V, f = 1 MHz, V = 0 ,
CB
EB
collector grounded
Noise figure
dB
I = 3 mA, V = 3 V, f = 1.8 GHz, Z = Z
Sopt
-
-
0.5
0.8
-
-
C
CE
S
I = 3 mA, V = 3 V, f = 6 GHz, Z = Z
Sopt
C
CE
S
1)
Power gain, maximum stable
G
G
-
25
-
dB
dB
ms
ma
I = 7 mA, V = 3 V, Z = Z
,
C
CE
S
Sopt
Z = Z
L
, f = 1.8 GHz
Lopt
1)
-
18
-
Power gain, maximum available
I = 7 mA, V = 3 V, Z = Z ,
Sopt
C
CE
S
Z = Z
, f = 6 GHz
Lopt
L
2
Transducer gain
|S
|
dB
21e
I = 7 mA, V = 3 V, Z = Z = 50 Ω,
C
CE
S
L
f = 1.8 GHz
-
-
21
14
-
-
f = 6 GHz
1/2
| (k-(k²-1) ), G
ms
1G
ma
= |S
/ S
= |S
/ S
|
21e 12e
21e 12e
2007-03-30
3
BFR705L3RH
Total power dissipation P = ƒ(T )
Permissible Puls Load R
= ƒ (t )
tot
S
thJS
p
50
45
40
35
30
25
20
15
10
5
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
D = 0
2
10
tp
D=tp /T
→
←
←
T
→
1
0
10
0
15
30
45
60
75
90
105
120
135
150
−8
10
−6
10
−4
10
−2
10
0
10
TS [°C]
tp [s]
Permissible Pulse Load
Collector-base capacitance C = ƒ (V )
cb CB
P
/P
= ƒ(t )
f = 1 MHz
totmax totDC
p
2
10
0.1
0.09
0.08
0.07
0.06
0.05
0.04
0.03
0.02
0.01
tp
D=tp /T
→
←
←
T
→
D = 0
D = 0.005
D = 0.01
D = 0.02
D = 0.05
D = 0.1
1
10
D = 0.2
D = 0.5
0
10
0
0
−8
−6
10
−4
10
−2
10
0
10
2
4
6
8
10
12
10
VCB [V]
tp [s]
2007-03-30
4
BFR705L3RH
Transition frequency f = ƒ(I )
Power gain G , G = ƒ (f)
ma ms
T
C
V
= parameter, f = 1 GHz
V
= 2 V, I = 7 mA
CE C
CE
45
45
2V to 4V
40
35
30
25
20
15
10
5
40
35
30
25
20
15
10
5
1.00V
Gms
2
|S21|
0.75V
0.50V
0
0
2
4
6
8
10
12
0
1
2
3
4
5
6
IC [mA]
f [GHz]
Power gain G , G = ƒ (I )
Power gain G , G = ƒ (V )
ma ms CE
ma
ms
C
V
= 3 V
I = 7 mA
CE
C
f = parameter
f = parameter
32
32
29
26
23
20
17
14
11
8
0.90GHz
1.80GHz
0.90GHz
1.80GHz
28
24
20
16
12
8
2.40GHz
3.00GHz
2.40GHz
3.00GHz
4.00GHz
5.00GHz
6.00GHz
4.00GHz
5.00GHz
6.00GHz
5
0
2
4
6
8
10
12
0
0.5
1
1.5
2
2.5
VCE [V]
3
3.5
4
4.5
5
IC [mA]
2007-03-30
5
Package TSLP-3-9
BFR705L3RH
Package Outline
Top view
Bottom view
±0.05
0.6
+0.01
-0.02
1)
0.31
±0.035
0.5
3
2
3
1
1
2
±0.05
0.35
Pin 1
marking
1)
±0.035
2x0.15
1) Dimension applies to plated terminal
Foot Print
For board assembly information please refer to Infineon website "Packages"
0.6
0.5
R0.19
R0.1
0.2
0.2
0.17
0.225
0.225
0.15
Copper
Solder mask
Stencil apertures
Marking Layout (Example)
BFR705L3RH
Type code
Pin 1 marking
Laser marking
Standard Packing
Reel ø180 mm = 15.000 Pieces/Reel
0.35
4
0.8
Pin 1
marking
2007-03-30
6
BFR705L3RH
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
2007-03-30
7
相关型号：
BFR705L3RHE6327XTSA1
RF Small Signal Bipolar Transistor, 0.01A I(C), 1-Element, X Band, Silicon Germanium, NPN, 0.32 MM HEIGHT, ROHS COMPLIANT, FLAT LEADLESS, TSLP-3-9, 3 PIN
INFINEON
BFR79
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
MICRO-ELECTRO
©2020 ICPDF网 联系我们和版权申明