BFR92PE6327 [INFINEON]
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN,;
| 型号： | BFR92PE6327 |
| 厂家： | 
Infineon |
| 描述： | RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN, |
| 文件： | 总7页 (文件大小：136K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BFR92P
NPN Silicon RF Transistor*
• For broadband amplifiers up to 2 GHz and
fast non-saturated switches at collector currents
from 0.5 mA to 20 mA
2
1
3
• Complementary type: BFT91 (PNP)
1)
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
* Short term description
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Type
BFR92P
Marking
GFs
Pin Configuration
Package
SOT23
1=B
2=E
3=C
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Symbol
Value
Unit
V
15
20
20
2.5
45
4
V
V
V
V
CEO
CES
CBO
EBO
mA
mW
°C
I
C
Base current
Total power dissipation-
I
B
280
P
tot
T ≤ 48 °C
S
150
-65 ... 150
-65 ... 150
Junction temperature
Ambient temperature
Storage temperature
T
j
T
A
T
stg
Thermal Resistance
Parameter
Symbol
Value
≤ 365
Unit
K/W
2)
Junction - soldering point
1
R
thJS
Pb-containing package may be available upon special request
2
For calculation of R
thJA
please refer to Application Note Thermal Resistance
2007-04-26
1
BFR92P
Electrical Characteristics at T = 25°C, unless otherwise specified
A
Parameter
Symbol
Values
Unit
min.
typ. max.
DC Characteristics
15
-
-
-
V
Collector-emitter breakdown voltage
V
(BR)CEO
I = 1 mA, I = 0
C
B
-
10
µA
Collector-emitter cutoff current
= 20 V, V = 0
I
CES
V
CE
BE
-
-
-
100 nA
100 µA
Collector-base cutoff current
= 10 V, I = 0
I
CBO
V
CB
E
-
Emitter-base cutoff current
= 2.5 V, I = 0
I
EBO
V
EB
C
70
100
140
-
DC current gain-
I = 15 mA, V = 8 V, pulse measured
h
FE
C
CE
2007-04-26
2
BFR92P
Electrical Characteristics at T = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ. max.
AC Characteristics (verified by random sampling)
Transition frequency
3.5
5
-
GHz
f
T
I = 15 mA, V = 8 V, f = 500 MHz
C
CE
-
-
-
0.39
0.55 pF
Collector-base capacitance
= 10 V, f = 1 MHz, V = 0 ,
emitter grounded
C
C
C
F
cb
ce
eb
V
CB
BE
0.23
0.64
-
-
Collector emitter capacitance
V
= 10 V, f = 1 MHz, V = 0 ,
CE
BE
base grounded
Emitter-base capacitance
V
= 0.5 V, f = 1 MHz, V = 0 ,
CB
EB
collector grounded
dB
Noise figure
I = 2 mA, V = 6 V, Z = Z
f = 900 MHz
,
,
C
CE
S
Sopt
-
-
1.4
2
-
-
I = 2 mA, V = 6 V, Z = Z
C
CE
S
Sopt
f = 1.8 GHz
1)
Power gain, maximum available
G
ma
I = 15 mA, V = 8 V, Z = Z
, Z = Z
,
C
CE
S
Sopt
L
Lopt
f = 900 MHz
-
-
16
-
I = 15 mA, V = 8 V, Z = Z
, Z = Z
,
C
CE
S
Sopt
L
Lopt
f = 1.8 GHz
10.5
-
2
Transducer gain
|S
|
dB
21e
I = 15 mA, V = 8 V, Z = Z = 50 Ω,
C
CE
S
L
f = 900 MHz
-
-
13
-
-
I = 15 mA, V = 8 V, Z = Z = 50 Ω,
C
CE
S
L
f = 1.8 MHz
7.5
1/2
1G
ma
= |S
/ S | (k-(k²-1)
21e 12e
)
2007-04-26
3
BFR92P
SPICE Parameter (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax):
Transistor Chip Data:
0.1213
30
fA
V
-
V
-
-
A
-
A
Ω
-
V
-
deg
-
fF
-
1.0947
129.55
0.8983
0.75557
0.01652
0.13793
0.34686
0.32861
946.47
0.13464
0.75
-
fA
-
fA
mA
Ω
-
V
fF
-
IS =
VAF =
NE =
BF =
IKF =
BR =
IKR =
RB =
RE =
VJE =
XTF =
PTF =
MJC =
CJS =
XTB =
FC =
94.733
0.46227
10.729
0.01
14.998
0.29088
0.70618
0.3817
0
NF =
ISE =
NR =
1.9052
14.599
1.371
7.8145
10.416
26.796
4.4601
0.84079
1.2744
0
VAR =
NC =
RBM =
CJE =
TF =
ITF =
VJC =
TR =
ISC =
IRB =
RC =
MJE =
VTF =
CJC =
XCJC =
VJS =
EG =
Ω
fF
ps
mA
V
ns
-
0.4085
0
0
V
eV
K
1.11
300
MJS =
XTI =
3
-
0.99545
TNOM
All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by:
Institut für Mobil- und Satellitentechnik (IMST)
Package Equivalent Circuit:
0.85
0.51
0.69
0.61
0
0.49
73
L =
nH
nH
nH
nH
nH
nH
fF
BI
L
=
BO
L =
EI
EO
L
=
L =
CI
CO
L
=
=
=
=
C
C
C
BE
CB
CE
84
165
fF
fF
Valid up to 6GHz
For examples and ready to use parameters
please contact your local Infineon Technologies
distributor or sales office to obtain a Infineon
Technologies CD-ROM or see Internet:
http://www.infineon.com
2007-04-26
4
BFR92P
Total power dissipation P = ƒ(T )
Permissible Pulse Load R
= ƒ(t )
tot
S
thJS
p
10 3
300
mW
K/W
200
150
100
50
10 2
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
10 1
0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
°C
s
0
20
40
60
80
100 120
150
T
t
p
S
Permissible Pulse Load
P
/P
= ƒ(t )
totmax totDC
p
10 2
-
D = 0
0.005
0.01
0.02
0.05
0.1
10 1
0.2
0.5
10 0
10 -7 10 -6 10 -5 10 -4 10 -3 10 -2
10 0
s
t
p
2007-04-26
5
Package SOT23
BFR92P
Package Outline
±0.1
1
0.1 MAX.
±0.1
2.9
B
3
1
2
1)
+0.1
-0.05
0.4
A
0.08...0.15
C
0.95
0...8˚
1.9
0.25 B C
1) Lead width can be 0.6 max. in dambar area
M
M
0.2
A
Foot Print
0.8
0.8
1.2
Marking Layout (Example)
Manufacturer
2005, June
Date code (YM)
EH
s
Pin 1
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
0.9
1.15
3.15
Pin 1
2007-04-26
6
BFR92P
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
2007-04-26
7
相关型号：
BFR92R-GS08
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN,
TEMIC
BFR92R-GS18
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN,
TEMIC
BFR92TRL
RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
YAGEO
BFR92TRL13
RF Small Signal Bipolar Transistor, 0.025A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN
YAGEO
BFR92W
NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA)
INFINEON
©2020 ICPDF网 联系我们和版权申明