BFR92TRL [NXP]
TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal;
| 型号： | BFR92TRL |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, BIP RF Small Signal 晶体 晶体管 |
| 文件： | 总10页 (文件大小：80K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFR92
NPN 5 GHz wideband transistor
September 1995
Product specification
File under Discrete Semiconductors, SC14
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92
DESCRIPTION
PINNING
PIN
NPN transistor in a plastic SOT23
envelope primarily intended for use in
RF wideband amplifiers and
DESCRIPTION
page
3
Code: P1p
1
2
3
base
oscillators. The transistor features
low intermodulation distortion and
high power gain; due to its very high
transition frequency, it also has
excellent wideband properties and
low noise up to high frequencies.
emitter
collector
1
2
Top view
MSB003
PNP complement is BFT92.
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
open base
TYP. MAX. UNIT
VCBO
VCEO
IC
−
−
−
−
5
20
15
25
300
−
V
collector-emitter voltage
DC collector current
total power dissipation
transition frequency
V
mA
mW
GHz
Ptot
fT
up to Ts = 95 °C; note 1
IC = 14 mA; VCE = 10 V; f = 500 MHz;
Tj = 25 °C
Cre
feedback capacitance
IC = 2 mA; VCE = 10 V; f = 1 MHz
0.4
−
−
pF
dB
GUM
maximum unilateral power gain
IC = 14 mA; VCE = 10 V; f = 500 MHz; 18
Tamb = 25 °C
F
noise figure
IC = 2 mA; VCE = 10 V; f = 500 MHz;
Tamb = 25 °C; Zs = opt.
2.4
−
−
dB
Vo
output voltage
dim = −60 dB; IC = 14 mA; VCE = 10 V; 150
RL = 75 Ω; Tamb = 25 °C;
mV
f(p+q−r) = 493.25 MHz
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
MIN. MAX.
UNIT
VCBO
VCEO
VEBO
IC
open emitter
open base
−
20
V
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
−
15
V
open collector
−
2
V
−
25
mA
mW
°C
°C
Ptot
Tstg
Tj
up to Ts = 95 °C; note 1
−
300
150
175
−65
−
Note
1. Ts is the temperature at the soldering point of the collector tab.
September 1995
2
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
Rth j-s
thermal resistance from junction to
soldering point
up to Ts = 95 °C; note 1
260 K/W
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
collector cut-off current
DC current gain
CONDITIONS
IE = 0; VCB = 10 V
MIN. TYP. MAX. UNIT
ICBO
hFE
fT
−
−
50
−
nA
IC = 14 mA; VCE = 10 V
40
−
90
5
transition frequency
collector capacitance
emitter capacitance
feedback capacitance
IC = 14 mA; VCE = 10 V; f = 500 MHz
IE = ie = 0; VCB = 10 V; f = 1 MHz
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
−
GHz
pF
Cc
−
0.75
0.8
0.4
−
Ce
−
−
pF
Cre
IC = 2 mA; VCE = 10 V; f = 1 MHz;
−
−
pF
Tamb = 25 °C
GUM
F
maximum unilateral power gain
(note 1)
IC = 14 mA; VCE = 10 V;
f = 500 MHz; Tamb = 25 °C
−
−
−
18
−
−
−
dB
dB
mV
noise figure (see Fig.2 and note 2) IC = 2 mA; VCE = 10 V; f = 500 MHz;
2.4
150
Tamb = 25 °C; Zs = opt.
Vo
output voltage
note 3
Notes
2
S21
2
˙
dB
--------------------------------------------------------------
1. GUM is the maximum unilateral power gain, assuming S12 is zero and GUM = 10 log
2
1 – S11
1 – S22
2. Crystal mounted in a SOT37 envelope (BFR90).
3. dim = −60 dB (DIN 45004B); IC = 14 mA; VCE = 10 V; RL = 75 Ω; Tamb = 25 °C;
Vp = Vo at dim = −60 dB; fp = 495.25 MHz;
Vq = Vo −6 dB; fq = 503.25 MHz;
Vr = Vo −6 dB; fr = 505.25 MHz;
measured at f(p+q−r) = 493.25 MHz.
September 1995
3
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92
MEA425 - 1
400
handbook, halfpage
P
tot
24 V
(mW)
handbook, halfpage
820 Ω
300
L3
390 Ω
3.9 kΩ
300 Ω
680 pF
200
100
650 pF
L2
75 Ω
output
L1
680 pF
75 Ω
DUT
input
16 Ω
MEA446
0
0
50
100
150
200
o
T ( C)
s
L2 = L3 = 5 µH Ferroxcube choke, catalogue
number 3122 108 20150.
L1 = 4 turns 0.35 mm copper wire; winding pitch
1 mm; internal diameter 4 mm.
Fig.2 Intermodulation distortion test circuit.
Fig.3 Power derating curve.
MEA428
MCD074
1
120
handbook, halfpage
handbook, halfpage
C
c
(pF)
h
FE
0.8
80
0.6
0.4
40
0.2
0
0
0
10
20
0
10
20
30
(V)
V
I
(mA)
CB
C
VCE = 10 V; Tj = 25 °C.
IE = ie = 0; f = 1 MHz; Tj = 25 °C.
Fig.4 DC current gain as a function of collector
current.
Fig.5 Collector capacitance as a function of
collector-base voltage.
September 1995
4
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92
MEA444
MEA427
6
30
handbook, halfpage
handbook, halfpage
f
gain
(dB)
T
(GHz)
4
20
10
0
G
UM
2
0
2
I S
12
I
2
4
3
0
10
20
30
10
10
10
f (MHz)
I
(mA)
C
VCE = 10 V; f = 500 MHz; Tj = 25 °C.
IC = 14 mA; VCE = 10 V; Tamb = 25 °C.
Fig.6 Transition frequency as a function of
collector current.
Fig.7 Gain as a function of frequency.
MEA465
MEA424
6
5
handbook, halfpage
handbook, halfpage
F
(dB)
5
F
(dB)
4
4
3
2
3
2
1
1
0
0
0
–1
f (GHz)
10
1
10
5
10
15
20
(mA)
I
C
IC = 2 mA; VCE = 10 V; Tamb = 25 °C; Zs = opt.
VCE = 10 V; f = 500 MHz; Tamb = 25 °C; Zs = opt.
Fig.8 Minimum noise figure as a function of
frequency.
Fig.9 Minimum noise figure as a function of
collector current.
September 1995
5
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92
MEA426
handbook, halfpage
40
B
S
(mS)
20
F = 5 dB
4.5
4
0
20
40
3.5
3
2.4
0
20
40
60
80
100
G
(mS)
S
IC = 2 mA; VCE = 10 V; f = 500 MHz; Tamb = 25 °C.
Fig.10 Noise circle figure.
September 1995
6
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92
1
0.5
2
0.2
5
10
+ j
0.2
0.5
1
2
5
10
0
∞
1000 MHz
800
– j
500
10
200
5
0.2
2
0.5
MEA429
1
IC = 14 mA; VCE = 10 V; Tamb = 25 °C.
Zo = 50 Ω.
Fig.11 Common emitter input reflection coefficient (S11).
90°
120°
60°
200
150°
30°
500
800
+ ϕ
− ϕ
1000 MHz
180°
0°
20
12
4
30°
150°
60°
120°
MEA431
90°
IC = 14 mA; VCE = 10 V; Tamb = 25 °C.
Fig.12 Common emitter forward transmission coefficient (S21).
September 1995
7
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92
90°
120°
60°
1000 MHz
800
150°
30°
500
200
+ ϕ
− ϕ
180°
0°
0.05
0.10
0.15
30°
150°
60°
120°
MEA432
90°
IC = 14 mA; VCE = 10 V; Tamb = 25 °C.
Fig.13 Common emitter reverse transmission coefficient (S12).
1
0.5
2
0.2
5
10
+ j
– j
0.2
0.5
1
2
5
10
0
∞
500
10
800
200
1000 MHz
5
0.2
2
0.5
MEA430
1
IC = 14 mA; VCE = 10 V; Tamb = 25 °C.
Zo = 50 Ω.
Fig.14 Common emitter output reflection coefficient (S22).
September 1995
8
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT23
September 1995
9
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistor
BFR92
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 1995
10
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