BGA8V1BN6 [INFINEON]
BGA8V1BN6 是用于 LTE 的前端低噪声放大器，覆盖 3.3 Ghz 至 3.8 Ghz 的宽频率范围。在应用配置中，LNA 在 4.2mA 的电流消耗下提供 15.0 dB 增益和 1.2 dB 噪声系数。在旁路模式下，LNA 提供 -5.3 dB 的插入损耗。 BGA8V1BN6 基于英飞凌科技 B9HF 硅锗技术。它采用 1.6 V 至 3.1 V 电源供电。该设备具有多状态控制(关闭，旁路和高增益模式)。;
| 型号： | BGA8V1BN6 |
| 厂家： | 
Infineon |
| 描述： | BGA8V1BN6 是用于 LTE 的前端低噪声放大器，覆盖 3.3 Ghz 至 3.8 Ghz 的宽频率范围。在应用配置中，LNA 在 4.2mA 的电流消耗下提供 15.0 dB 增益和 1.2 dB 噪声系数。在旁路模式下，LNA 提供 -5.3 dB 的插入损耗。 BGA8V1BN6 基于英飞凌科技 B9HF 硅锗技术。它采用 1.6 V 至 3.1 V 电源供电。该设备具有多状态控制(关闭，旁路和高增益模式)。 放大器 LTE |
| 文件： | 总11页 (文件大小：303K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BGA8V1BN6
BGA8V1BN6
Low Noise Amplifier for LTE Band 42 and Band 43
Features
•
•
•
•
•
•
•
•
•
Operating frequencies: 3.3 - 3.8 GHz
Insertion power gain: 15.0 dB
Insertion Loss in bypass mode: 5.3 dB
Low noise figure: 1.2 dB
Low current consumption: 4.2 mA
Multi-state control: OFF-, bypass- and high gain-Mode
Ultra small TSNP-6-2 leadless package
RF input and RF output internally matched to 50 Ohm
No external components necessary
0.7 x 1.1 mm2
Application
The LTE data rate can be significantly improved by using the Low Noise Amplifier. The integrated bypass function
increases the overall system dynamic range and leads to more flexibility in the RF front-end.
In high gain mode the LNA offers best Noise Figure to ensure high data rates even on the LTE cell edge. Closer to
the basestation the bypass mode can be activated reducing current consumption.
Product Validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Block diagram
VCC
GPIO1 GPIO2
AI
AO
ESD
GND
BGA8V1BN6_Blockdiagram.vsd
Data Sheet
www.infineon.com
Revision 3.3 (min/max)
2017-09-14
BGA8V1BN6
Low Noise Amplifier for LTE Band 42 and Band 43
Table of Contents
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1
2
3
4
5
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Data Sheet
2
Revision 3.3 (min/max)
2017-09-14
BGA8V1BN6
Low Noise Amplifier for LTE Band 42 and Band 43
Features
1
Features
•
•
•
•
•
•
•
•
•
•
•
•
•
Insertion power gain: 15.0 dB
Insertion Loss in bypass mode: 5.3 dB
Low noise figure: 1.2 dB
Low current consumption: 4.2 mA
Operating frequencies: 3.3 - 3.8 GHz
Multi-state control: OFF-, bypass- and high gain-Mode
Supply voltage: 1.6 V to 3.1 V
Ultra small TSNP-6-2 leadless package (footprint: 0.7 x 1.1 mm2)
B9HF Silicon Germanium technology
RF input and RF output internally matched to 50 Ohm
No external SMD components necessary
2kV HBM ESD protection (including AI-pin)
Pb-free (RoHS compliant) package
VCC
GPIO1 GPIO2
AI
AO
ESD
GND
BGA8V1BN6_Blockdiagram.vsd
Figure 1
Block Diagram
Product Name
Marking
Package
BGA8V1BN6
X
TSNP-6-2
Data Sheet
3
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BGA8V1BN6
Low Noise Amplifier for LTE Band 42 and Band 43
Features
Description
The BGA8V1BN6 is a front-end low noise amplifier for LTE which covers a wide frequency range from 3.3 GHz to
3.8 GHz. The LNA provides 15.0 dB gain and 1.2 dB noise figure at a current consumption of 4.2 mA in the
application configuration described in Chapter 4. In bypass mode the LNA provides an insertion loss of 5.3 dB.
The BGA8V1BN6 is based upon Infineon Technologies‘ B9HF Silicon Germanium technology. It operates from
1.6 V to 3.1 V supply voltage. The device features a multi-state control (OFF-, bypass- and high gain-Mode).
Pin Definition and Function
Table 1
Pin Definition and Function
Pin No.
Name
GPIO2
VCC
Function
1
2
3
4
5
6
Control pin 2
DC supply
LNA output
Control pin 1
Ground
AO
GPIO1
GND
AI
LNA input
Control Table
Table 2
Control Table
GPIO1
Low
GPIO2
Low
OFF
High
Low
Low
Bypass mode
High
High
High gain mode
High
Data Sheet
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BGA8V1BN6
Low Noise Amplifier for LTE Band 42 and Band 43
Maximum Ratings
2
Maximum Ratings
Table 3
Maximum Ratings
Parameter
Symbol
VCC
Values
Typ.
Unit
Note or
Test Condition
Min.
-0.3
-0.3
-0.3
-0.3
-0.3
–
Max.
3.6
1)
Voltage at pin VCC
Voltage at pin AI
–
–
–
–
–
–
–
–
V
VAI
0.9
V
–
–
–
–
–
–
–
Voltage at pin AO
Voltage at GPIO pins
Voltage at pin GND
Current into pin VCC
RF input power
VAO
VGPIO
VGND
ICC
VCC + 0.3
VCC + 0.3
0.3
V
V
V
16
mA
dBm
mW
PIN
–
+25
Total power dissipation,
Ptot
–
60
TS < 148 °C2)
Junction temperature
TJ
–
–
–
–
-
150
85
°C
°C
°C
V
–
–
–
Ambient temperature range
Storage temperature range
ESD capability all pins
TA
-40
-65
-
TSTG
VESD_HBM
150
2000
according to
JS-001
1) All voltages refer to GND-Node unless otherwise noted
2) TS is measured on the ground lead at the soldering point
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Maximum ratings are absolute ratings; exceeding only one of these values may cause
irreversible damage to the integrated circuit. Exposure to conditions at or below absolute
maximum rating but above the specified maximum operation conditions may affect device
reliability and life time. Functionality of the device might not be given under these conditions.
Data Sheet
5
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BGA8V1BN6
Low Noise Amplifier for LTE Band 42 and Band 43
Electrical Characteristics
3
Electrical Characteristics
Table 4
Electrical Characteristics1)
TA = 25 °C, VCC = 2.8 V, VGPIOx,ON = 2.8 V, VGPIOx,OFF = 0 V, f = 3300 - 3800 MHz
Parameter
Symbol
Values
Typ.
2.8
–
Unit Note or Test Condition
Min.
1.6
1.0
0
Max.
3.1
VCC
0.4
5.2
120
2
Supply voltage
VCC
V
–
Control voltages
VGPIOx
V
High
–
V
Low
Supply current
ICC
–
4.2
85
mA
µA
µA
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
µs
µs
High gain mode
Bypass mode
OFF-Mode
–
–
0.1
15.0
-5.3
1.2
5.3
15
Insertion power gain
f = 3500 MHz
|S21|2
NF
13.0
-6.8
–
17.0
-3.8
1.7
6.8
–
High gain mode
Bypass mode
High gain mode
Bypass mode
High gain mode
Bypass mode
High gain mode
Bypass mode
High gain mode
Bypass mode
High gain- to bypass-mode
Bypass- to High gain-mode
Noise figure2)
f = 3500 MHz, ZS = 50 Ω
–
Input return loss3)
f = 3500 MHz
RLIN
RLOUT
1/|S12|2
tS
10
10
8
16
–
Output return loss3)
f = 3500 MHz
11
–
3
5
–
Reverse isolation3)
f = 3500 MHz
20
6.8
–
28
–
5.3
0.3
3
–
Transient time4)6)
3
–
5
Inband input 1dB-compression IP1dB
point, f = 3500 MHz3)
-19
-7
-8
1
-15
-3
–
dBm High gain mode
dBm Bypass mode
dBm High gain mode
dBm Bypass mode
–
Inband input 3rd-order
IIP3
-3
–
intercept point3)5)
6
–
f1 = 3500 MHz, f2 = f1 +/- 1 MHz
Phase discontinuity between
ON- and bypass-mode3)
-6
–
–
6
–
°
Part to part variation after
compensation in Base Band
with constant value
Stability6)
k
> 1
f = 20 MHz ... 10 GHz
1) Based on the application described in chapter 4
2) PCB losses are subtracted
3) Verification based on AQL; not 100% tested in production
4) To be within 1 dB of the final gain
5) Input power HG = -30 dBm for each tone; Input power BP = -10 dBm for each tone
6) Guaranteed by device design; not tested in production
Data Sheet
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BGA8V1BN6
Low Noise Amplifier for LTE Band 42 and Band 43
Application Information
4
Application Information
Application Board Configuration
N1 BGA8V1BN6
AO, 3
GPIO1, 4
GND, 5
AI, 6
GPIO1
RFout
GPIO2
VCC, 2
VCC
GND
C1
(optional)
C2
GPIO2, 1
RFin
BGA8V1BN6_Schematic.vsd
Figure 2
Application Schematic BGA8V1BN6
Bill of Materials
Table 5
Name
Value
Package
0402
Manufacturer
Various
Function
C1 (optional) ≥ 1nF
Input matching
RF bypass 1)
SiGe LNA
C2
N1
≥ 1nF
0402
Various
BGA8V1BN6
TSNP-6-2
Infineon
1) RF bypass recommended to mitigate power supply noise
Note:
No external DC blocking capacitor at RFin is required in typical applications as long as no DC is applied.
A list of all application notes is available at http://www.infineon.com/ltelna
Data Sheet
7
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BGA8V1BN6
Low Noise Amplifier for LTE Band 42 and Band 43
Package Information
5
Package Information
Top view
Bottom view
+0.02ꢀ
-0.01ꢀ
0.37ꢀ
0.0ꢀ
0.7
A
0.0ꢀ
1)
0.02 MAX.
STANDOFF
0.2
6x
0.1 A
3
4
2
1
ꢀ
6
0.4
B
Pin 1 marking
1) Dimension applies to plated terminals
TSNP-6-2-PO V01
Figure 3
TSNP-6-2 Package Outline (top, side and bottom views)
NSMD
0.4
0.4
0.2ꢀ
0.2ꢀ
(stencil thickness 100 µm)
Stencil apertures
Copper
Solder mask
TSNP-6-2-FP V01
Figure 4
Footprint Recommendation TSNP-6-2
Type code
Monthly data code
Pin 1 marking
TSNP-6-2-MK V01
Figure 5
Marking Layout (top view)
Data Sheet
8
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BGA8V1BN6
Low Noise Amplifier for LTE Band 42 and Band 43
Package Information
0.ꢀ
Pin 1
marking
2
0.8ꢀ
TSNP-6-2-TP V01
Figure 6
Tape & Reel Dimensions (reel diameter 180 mm, pieces/reel 15000)
Data Sheet
9
Revision 3.3 (min/max)
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BGA8V1BN6
Low Noise Amplifier for LTE Band 42 and Band 43
Revision History
Page or Item
Subjects (major changes since previous revision)
Revision 3.3 (min/max), 2017-09-14
5
Update max. RF input power
Update trademark information
11
Data Sheet
10
Revision 3.3 (min/max)
2017-09-14
Please read the Important Notice and Warnings at the end of this document
Other Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
IMPORTANT NOTICE
The information given in this document shall in no For further information on technology, delivery terms
Edition 2017-09-14
Published by
Infineon Technologies AG
81726 Munich, Germany
event be regarded as a guarantee of conditions or and conditions and prices, please contact the nearest
characteristics ("Beschaffenheitsgarantie").
Infineon Technologies Office (www.infineon.com).
With respect to any examples, hints or any typical
values stated herein and/or any information regarding
the application of the product, Infineon Technologies
hereby disclaims any and all warranties and liabilities
of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any
third party.
In addition, any information given in this document is
subject to customer's compliance with its obligations
stated in this document and any applicable legal
requirements, norms and standards concerning
customer's products and any use of the product of
Infineon Technologies in customer's applications.
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer's technical departments to
evaluate the suitability of the product for the intended
application and the completeness of the product
information given in this document with respect to
such application.
WARNINGS
© 2017 Infineon Technologies AG.
All Rights Reserved.
Due to technical requirements products may contain
dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies office.
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Email: erratum@infineon.com
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Document reference
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相关型号：
BGA9V1MN9
The BGA9V1MN9 is a low noise amplifier for LTE and 5G which covers a wide frequency range from 3.3 GHz to 4.2 GHz. The LNA provides up to 21.0 dB gain and 0.75 dB noise figure at a current consumption of 5.8 mA in the application configuration described in Chapter 7. With the Gain Step feature the gain and linearity can be adjusted to increase the system dynamic range and to accommodate to changing interference scenarios.
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