BGS14PN10 [INFINEON]
BGS14PN10 是一款单刀双掷（SP4T）高线性度，高功率 RF 开关，针对高达 6.0 Ghz 的移动电话应用进行了优化。该单电源芯片集成了片上 CMOS 逻辑，该逻辑由两个简单的兼容 CMOS 或 TTL 的控制输入信号驱动。与 GaAs 技术不同，0.1 dB压缩点超出了开关的最大输入功率水平，从而在所有信号电平下实现了线性性能。只有在外部施加直流电压时才需要 RF 端口的外部直流隔离电容器。;
| 型号： | BGS14PN10 |
| 厂家： | 
Infineon |
| 描述： | BGS14PN10 是一款单刀双掷（SP4T）高线性度，高功率 RF 开关，针对高达 6.0 Ghz 的移动电话应用进行了优化。该单电源芯片集成了片上 CMOS 逻辑，该逻辑由两个简单的兼容 CMOS 或 TTL 的控制输入信号驱动。与 GaAs 技术不同，0.1 dB压缩点超出了开关的最大输入功率水平，从而在所有信号电平下实现了线性性能。只有在外部施加直流电压时才需要 RF 端口的外部直流隔离电容器。 电话 开关 移动电话 驱动 电容器 |
| 文件： | 总16页 (文件大小：2807K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BGS14PN10
SP4T high linearity, high power RF Switch
Data Sheet
Revision 1.3 - 2016-08-24
ꢀꢁꢂꢃꢄ ꢅꢆꢇꢆꢈꢃꢉꢃꢇꢊ ꢋ ꢅꢌꢍꢊꢎꢉꢆꢄꢏꢃꢊ
Edition 2016-08-24
Published by
Infineon Technologies AG
81726 Munich, Germany
c
ꢀ2012 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.
With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding
the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon
Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices
or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
BGS14PN10
Confidential
Revision History
Document No.: BGS14PN10.pdf
Revision History: 1.3
Previous Version: 1.2
Page
Subjects (major changes since last revision)
Updated title
1
Trademarks of Infineon Technologies AG
AURIXTM, C166TM, CanPAKTM, CIPOSTM, CIPURSETM,CoolGaNTM,CoolMOSTM, CoolSETTM, CoolSiCTM, CORECONTROLTM
,
,
,
,
,
DAVETM, DI-POLTM,EasyPIMTM, EconoBRIDGETM, EconoDUALTM, EconoPACKTM, EconoPIMTM, EiceDRIVERTM, eupecTM
FCOSTM, HITFETTM, HybridPACKTM, ISOFACETM, I2RFTM, IsoPACKTM, MIPAQTM, ModSTACKTM, my-dTM, NovalithICTM
OmniTuneTM
ReverSaveTM
TRENCHSTOPTM
,
OptiMOSTM
,
ORIGATM
SIEGETTM
,
OPTIGATM
SIPMOSTM
,
PROFETTM
,
PRO-SILTM
,
,
PRIMARIONTM
,
PrimePACKTM
thinQ!TM
,
,
RASICTM
TriCoreTM
,
SatRICTM
,
,
,
SOLID FLASHTM
SmartLEWISTM
,
TEMPFETTM
,
.
Other Trademarks
Advance Design SystemTM (ADS) of Agilent Technologies, AMBATM, ARMTM, MULTI-ICETM, PRIMECELLTM, REALVIEWTM
,
THUMBTM of ARM Limited, UK. AUTOSARTM is licensed by AUTOSAR development partnership. BluetoothTM of Bluetooth
SIG Inc. CAT-iqTM of DECT Forum. COLOSSUSTM, FirstGPSTM of Trimble Navigation Ltd. EMVTM of EMVCo, LLC (Visa
Holdings Inc.). EPCOSTM of Epcos AG. FLEXGOTM of Microsoft Corporation. FlexRayTM is licensed by FlexRay Consortium.
HYPERTERMINALTM of Hilgraeve Incorporated. IECTM of Commission Electrotechnique Internationale. IrDATM of Infrared Data
Association Corporation. ISOTM of INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLABTM of MathWorks,
Inc. MAXIMTM of Maxim Integrated Products, Inc. MICROTECTM, NUCLEUSTM of Mentor Graphics Corporation. MifareTM of
NXP. MIPITM of MIPI Alliance, Inc. MIPSTM of MIPS Technologies, Inc., USA. muRataTM of MURATA MANUFACTURING CO.,
MICROWAVE OFFICETM (MWO) of Applied Wave Research Inc., OmniVisionTM of OmniVision Technologies, Inc. OpenwaveTM
Openwave Systems Inc. RED HATTM Red Hat, Inc. RFMDTM RF Micro Devices, Inc. SIRIUSTM of Sirius Sattelite Radio Inc.
SOLARISTM of Sun Microsystems, Inc. SPANSIONTM of Spansion LLC Ltd. SymbianTM of Symbian Software Limited. TAIYO
YUDENTM of Taiyo Yuden Co. TEAKLITETM of CEVA, Inc. TEKTRONIXTM of Tektronix Inc. TOKOTM of TOKO KABUSHIKI
KAISHA TA. UNIXTM of X/Open Company Limited. VERILOGTM, PALLADIUMTM of Cadence Design Systems, Inc. VLYNQTM of
Texas Instruments Incorporated. VXWORKSTM, WIND RIVERTM of WIND RIVER SYSTEMS, INC. ZETEXTM of Diodes Zetex
Limited.
Last Trademarks Update 2012-12-13
Data Sheet
3
Revision 1.3 - 2016-08-24
BGS14PN10
Confidential
Contents
Contents
1
2
3
4
5
6
7
8
9
Features
5
6
Product Description
Maximum Ratings
7
Operation Ranges
8
Logic Table
8
RF Characteristics for RF1 and RF3
RF Characteristics for RF2 and RF4
RF large signal parameter
Package Outline and Pin Configuration
9
10
11
13
List of Figures
1
BGS14PN10 block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7
2
3
4
5
6
Pinout (top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Package Dimensions Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Land pattern and stencil mask . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Tape drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
List of Tables
1
2
3
4
5
6
7
8
9
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
7
8
8
8
9
Maximum Ratings, Table I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Ratings, Table II . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operation Ranges . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Logic Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RF Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
RF Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
RF large signal Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
RF large signal Specifications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
10 Logic Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
11 Logic Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
12 Logic Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13 Pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
14 Mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Data Sheet
4
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BGS14PN10
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BGS14PN10 SP4T high linearity, high power RF Switch
1 Features
• High max RF power: 40 dBm CW @ 900 MHz, room tempera-
ture
• Two ultra-low loss ports (RF1 and RF3):
0.19 dB @ f=0.9 GHz, PIN=38 dBm
0.29 dB @ f=1.9 GHz, PIN=38 dBm
0.51 dB @ f=2.7 GHz, PIN=33 dBm
1.20 dB @ f=3.8 GHz, PIN=33 dBm
1.90 dB @ f=5.8 GHz, PIN=33 dBm
• Two low loss ports (RF2 and RF4):
0.32 dB @ f=0.9 GHz, PIN=38 dBm
0.40 dB @ f=1.9 GHz, PIN=38 dBm
0.64 dB @ f=2.7 GHz, PIN=33 dBm
1.19 dB @ f=3.8 GHz, PIN=33 dBm
1.78 dB @ f=5.8 GHz, PIN=33 dBm
• No DC decoupling components required, if no external DC is
applied on RF ports
• High ESD robustness
• Low harmonic generation
• High linearity
RF1/RF3 72 dBm IIP3
RF2/RF4 74 dBm IIP3
• No power supply blocking required
• Supply voltage range: 1.8 to 3.6 V
• No insertion loss change within supply voltage range
• No linearity change within supply voltage range
• Suitable for EDGE / C2K / LTE / WCDMA / SV-LTE Applications
• Mobile cellular Rx/Tx applications, suitable for LTE/3G
• Applicable for main path and entire RF-Front-end without any
power restrictions in mobile communication
DL/UL CA and MIMO
Micro/Pico Cells / Cellular base stations
Test equipment
Suitable for SV-LTE
• 0.5 to 6.0 GHz coverage
• Small form factor 1.1 mm x 1.5 mm
• 400 µm pad pitch
• RoHS and WEEE compliant package
Data Sheet
5
Revision 1.3 - 2016-08-24
BGS14PN10
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2 Product Description
The BGS14PN10 is a Single Pole Quad Throw (SP4T) RF antenna aperture switch optimized for mobile phone
applications up to 6.0 GHz. This single supply chip integrates on-chip CMOS logic driven by a two simple, CMOS
or TTL compatible control input signals. Unlike GaAs technology, the 0.1 dB compression point exceeds the switch
maximum input power level, resulting in linear performance at all signal levels and external DC blocking capacitors
at the RF ports are only required if DC voltage is applied externally.
Table 1: Ordering Information
Type
Package
Marking
Chip
BGS14PN10
TSNP10-1
4P
M4821C
Data Sheet
6
Revision 1.3 - 2016-08-24
BGS14PN10
Confidential
ꢄꢅꢆꢇꢇ
ꢀꢁꢃ
ꢄꢋꢌꢍꢎꢏꢐ
ꢀꢐꢏꢑꢌꢎꢍꢋꢒ
ꢃꢇꢀꢈꢂ
ꢃꢇꢀꢈꢉ
ꢘꢒꢙꢚꢐꢒ
ꢃꢓꢎꢒꢏꢐꢔꢑꢕꢔ
ꢀꢁꢉ
ꢀꢁꢊ
ꢀꢁꢛ
ꢀꢁꢂ
Figure 1: BGS14PN10 block diagram
3 Maximum Ratings
Table 2: Maximum Ratings, Table I at TA = 25 ◦C, unless otherwise specified
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
0.5
-0.5
-55
–
Typ.
Max.
–
1)
Frequency Range
f
–
–
–
–
–
–
GHz
V
◦C
Supply voltage
VDD
TSTG
PRF_TRx
3.6
150
40
–
–
Storage temperature range
RF input power
dBm 25% duty cycle
ESD capability Human Body Model
VESD
-1
+1
kV
HBM
ESD capability ANT port (according VESD
-8
+8
kV
On application board with
ANT
IEC 61000-4-2 contact)
27nH shunt inductor
–
Junction temperature
Tj
–
–
125
◦C
1) Switch has no highpass response. There is also a high ohmic DC to the RF path. The DC voltage at RF ports VRFDC has to be 0V.
Data Sheet
7
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BGS14PN10
Confidential
Table 3: Maximum Ratings, Table II at TA = 25 ◦C, unless otherwise specified
Parameter
Symbol
Values
Typ.
Unit
Note / Test Condition
Min.
Max.
Maximum DC-voltage on RF-Ports VRFDC
0
–
0
V
V
No DC voltages allowed on
and RF-Ground
RF-Ports
–
Control Voltage Levels
VCTRL
-0.7
–
3.3
4 Operation Ranges
Table 4: Operation Ranges
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
1.8
–
Typ.
2.85
75
Max.
3.6
120
0.45
2.85
1
Supply voltage
Supply current1)
VDD
V
–
IDD
µA
V
–
Control voltage low
Control voltage high
Control current low
Control current high
Ambient temperature
RF switching time 2)
Startup time 2)
VCtrl,low
VCtrl,high
ICtrl,low
ICtrl,high
TA
0
–
1.2
-1
1.8
0
V
VCtrl,high ꢁ VDD
–
µA
µA
◦C
µs
µs
-1
0
1
VCtrl,high ꢁ VDD
–
–
–
-40
1
25
2
85
tsw
5
tsw
10
30
1)TA = -30 ◦C − +85 ◦C, VBATT = 1.8 − 3.6 V
2), Represents actual alpha status. To be updated.
5 Logic Table
Table 5: Logic Table
CTRL 1
CTRL 2
Mode
0
0
1
1
0
1
0
1
RF1 connected to ANT
RF2 connected to ANT
RF3 connected to ANT
RF4 connected to ANT
Data Sheet
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6 RF Characteristics for RF1 and RF3
Table 6: RF Specifications
Parameter
Symbol
Values
Typ.
Unit
Note / Test Condition
Min.
Max.
Insertion Loss
698 - 960 MHz
–
–
–
–
–
–
0.18
0.29
0.30
0.51
1.20
1.90
0.26
0.36
0.41
0.68
1.40
2.35
dB
dB
dB
dB
dB
dB
1710 - 1980 MHz
IL
1981 - 2170 MHz
2171 - 2690 MHz
3400 - 3800 MHz
5150 - 5850 MHz
VDD = 1.8 − 3.6 V,
TA = -30 ... +85 ◦C,
Z0 = 50 Ω,
Return Loss
All Ports @ 698 - 915 MHz
All Ports @ 1710 - 1980 MHz
All Ports @ 1981 - 2170 MHz
All Ports @ 2171 - 2690 MHz
All Ports @ 3400 - 3800 MHz
All Ports @ 5150 - 5850 MHz
Isolation RFC
23
16
14
11
7
30
19
17
12
8
–
–
–
–
–
–
dB
dB
dB
dB
dB
dB
RL
PIN up to 38 dBm
6
7
698 - 915 MHz
34
27
26
24
20
15
41
32
30
28
24
18
–
–
–
–
–
–
dB
dB
dB
dB
dB
dB
1710 - 1980 MHz
ISO
ISO
1981 - 2170 MHz
2171 - 2690 MHz
3400 - 3800 MHz
5150 - 5850 MHz
Isolation RF1,2,3,4 - RF4,3,2,1
698 - 915 MHz
43
34
33
30
24
18
50
38
36
33
28
21
–
–
–
–
–
–
dB
dB
dB
dB
dB
dB
1710 - 1980 MHz
1981 - 2170 MHz
2170 - 2690 MHz
3400 - 3800 MHz
5150 - 5850 MHz
Data Sheet
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7 RF Characteristics for RF2 and RF4
Table 7: RF Specifications
Parameter
Symbol
Values
Typ.
Unit
Note / Test Condition
Min.
Max.
Insertion Loss
698 - 960 MHz
–
–
–
–
–
–
0.30
0.40
0.41
0.64
1.19
1.78
0.40
0.50
0.54
0.80
1.45
2.09
dB
dB
dB
dB
dB
dB
1710 - 1980 MHz
IL
1981 - 2170 MHz
2171 - 2690 MHz
3400 - 3800 MHz
5150 - 5850 MHz
VDD = 1.8 − 3.6 V,
TA = -30 ... +85 ◦C,
Z0 = 50 Ω,
Return Loss
All Ports @ 698 - 915 MHz
All Ports @ 1710 - 1980 MHz
All Ports @ 1981 - 2170 MHz
All Ports @ 2171 - 2690 MHz
All Ports @ 3400 - 3800 MHz
All Ports @ 5150 - 5850 MHz
Isolation RFC
23
17
14
11
7
27
20
18
15
9
–
–
–
–
–
–
dB
dB
dB
dB
dB
dB
RL
PIN up to 38 dBm
6
8
698 - 915 MHz
34
27
26
24
20
14
41
32
30
28
24
18
–
–
–
–
–
–
dB
dB
dB
dB
dB
dB
1710 - 1980 MHz
ISO
ISO
1981 - 2170 MHz
2171 - 2690 MHz
3400 - 3800 MHz
5150 - 5850 MHz
Isolation RF1,2,3 - RF3,2,1
698 - 915 MHz
43
34
33
30
24
18
50
38
36
33
28
21
–
–
–
–
–
–
dB
dB
dB
dB
dB
dB
1710 - 1980 MHz
1981 - 2170 MHz
2170 - 2690 MHz
3400 - 3800 MHz
5150 - 5850 MHz
Data Sheet
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8 RF large signal parameter
Table 8: RF large signal specifications for RF1 and RF3
Parameter
Symbol
Values
Typ.
–
Unit
Note / Test Condition
Min.
Max.
Max. RF input power
–
–
38
dBm for typical Hx behavior
Harmonic Generation up to 12.75 GHz(1,2,3)
Second Order Harmonics
Third Order Harmonics
All RF Ports
PH2
PH3
PHx
–
–
–
-100
-115
-100
–
–
–
dBc
dBc
dBc
25 dBm, 50Ω, CW mode
25 dBm, 50Ω, CW mode
25 dBm, 50Ω, CW mode
Intermodulation Distortion IMD2 (1,2,3)
IIP2, low
IIP2,l
–
–
110
125
–
–
dBm
dBm
IIP2 conditions table 8
IIP2, high
IIP2,h
Intermodulation Distortion IMD3 (1,2,3)
IIP3
IIP3
–
–
72
73
–
–
dBm
dBm
IIP3 conditions table 9
SV LTE Intermodulation (1,2,3)
IIP3,SVLTE
IIP3,SV
SV-LTE conditions table 10
1)Terminating Port Impedance: Z0 = 50 Ω 2)Supply Voltage: VDD = 1.8 − 3.6 V 3)On application board without any matching
components
Table 9: RF large signal specifications for RF2 and RF4
Parameter
Symbol
Values
Typ.
–
Unit
Note / Test Condition
Min.
Max.
Max. RF input power
–
–
38
dBm
for typical Hx behavior
Harmonic Generation up to 12.75 GHz(1,2,3)
Second Order Harmonics
Third Order Harmonics
All RF Ports
PH2
PH3
PHx
–
–
–
-105
-105
-105
–
–
–
dBc
dBc
dBc
25 dBm, 50Ω, CW mode
25 dBm, 50Ω, CW mode
25 dBm, 50Ω, CW mode
Intermodulation Distortion IMD2 (1,2,3)
IIP2, low
IIP2,l
IIP2,h
–
–
110
130
–
–
dBm
dBm
IIP2 conditions table 8
IIP2, high
Intermodulation Distortion IMD3 (1,2,3)
IIP3
IIP3
IIP3,SV
–
–
74
74
–
–
dBm
dBm
IIP3 conditions table 9
SV LTE Intermodulation (1,2,3)
IIP3,SVLTE
SV-LTE conditions table 10
1)Terminating Port Impedance: Z0 = 50 Ω 2)Supply Voltage: VDD = 1.8 − 3.6 V 3)On application board without any matching
components
Data Sheet
11
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Table 10: IIP2 conditions table
Band
In-Band Frequency Blocker Frequency 1
Blocker Power 1
Blocker Frequency 2
Blocker Power 2
[MHz]
2140
2140
881.5
881.5
[MHz]
1950
1950
836.5
836.5
[dBm]
20
[MHz]
190
[dBm]
-15
Band 1 Low
Band 1 High
Band 5 Low
Band 5 High
20
4090
45
-15
20
-15
20
1718
-15
Table 11: IIP3 conditions table
Band
In-Band Frequency Blocker Frequency 1
Blocker Power 1
Blocker Frequency 2
Blocker Power 2
[MHz]
2140
881.5
[MHz]
1950
836.5
[dBm]
20
[MHz]
1760
791.5
[dBm]
-15
Band 1
Band 5
20
-15
Table 12: SV-LTE conditions table
Band
In-Band Frequency Blocker Frequency 1
Blocker Power 1
Blocker Frequency 2
Blocker Power 2
[MHz]
872
[MHz]
827
[dBm]
23
[MHz]
872
[dBm]
14
Band 5
Band 13
Band 20
747
786
23
747
14
878
833
23
2544
14
Data Sheet
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9 Package Outline and Pin Configuration
ꢀꢁꢂ
ꢃꢄ
ꢅꢆꢃ ꢃ
ꢈꢁꢉ ꢇ
ꢅꢆꢇ ꢍ
ꢊꢉꢉ ꢎ
ꢏꢅꢆꢍ
ꢐꢈꢁꢉ
ꢑ
ꢅꢆꢎ
ꢒ ꢋꢂꢅꢌ ꢇ
ꢓ
ꢋꢂꢅꢌ ꢃ
Figure 2: Pinout (top view)
Table 13: Pin Description
Pin No.
Name
Pin
Type
I/O
Buffer
Type
Function
1
2
3
4
5
6
7
8
9
10
RF1
RF1
GND
RF2
GND
I/O
Ground
RF2
VDD
CTRL 1
CTRL 2
RF4
PWR
I
Supply voltage
Control Pin 1
Control Pin 2
RF4
I
I/O
GND
RF3
GND
I/O
Ground
RF3
ANT
I/O
Common RF / Antenna
Table 14: Mechanical Data
Parameter
X-Dimension
Y-Dimension
Size
Symbol
Value
Unit
mm
mm
mm2
mm
X
1.1 ± 0.05
1.5 ± 0.05
1.65
Y
Size
H
Height
0.375
Data Sheet
13
Revision 1.3 - 2016-08-24
BGS14PN10
Confidential
Top view
Bottom view
0.8
0.4
5
0.375
±0.05
1.1
0.02 MAX.
A
B
6
7
8
9
4
3
2
1
10
±0.05
0.2
10x
Pin 1 marking
0.1 A
Figure 3: Package Dimensions Drawing
Optional solder mask dam
10x 0.25
0.4
0.4
0.4
10x 0.25
0.4
Stencil apertures
Copper
Solder mask
TSNP-10-1-FP V01
Figure 4: Land pattern and stencil mask
Data Sheet
14
Revision 1.3 - 2016-08-24
BGS14PN10
Confidential
ꢃꢋꢌ ꢅ ꢍꢎꢏꢐꢋꢌꢑ
ꢙꢎꢚꢕ ꢖꢗꢘꢕ ꢛꢜꢝꢞ
ꢀꢓꢔꢕ ꢖꢗꢘꢕ
Figure 5: Marking
0.5
4
Pin 1
marking
1.3
TSNP-10-1-TP V01
Figure 6: Tape drawing
Data Sheet
15
Revision 1.3 - 2016-08-24
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Published by Infineon Technologies AG
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