BGS16MA12_技术文档

BGS16MA12

MIPI 2.0 SP6T switch for LTE diversity, Tx and LAA applications

Key Features

• 0.1 to 6 GHz coverage for LTE and LAA application

• LTE TX power handling capabilities

• Ultra low insertion loss: 0.65dB at Band 42

• Small form factor 1.1mm x 1.9mm

• Fully compatible with MIPI 2.0 RFFE standard

• No decoupling capacitors required (Unless DC applied on RF lines)

Applications

The SP6T switch is a band selection switch for LTE applications. With LTE TX power handling capability it is suitable for

both LTE diversity path and LTE uplink Tx applications. The switch covers up to 6 GHz, so it covers Band 42, Band 43 and

LAA.

Product Validation

Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.

Block diagram

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Data Sheet

www.infineon.com

Revision 1.1

2019-04-15

BGS16MA12

MIPI 2.0 SP6T switch for LTE diversity, Tx and LAA applications

Table of Contents

1

2

1

Features

2

3

4

5

6

Maximum Ratings

Operation ranges

RF Characteristics

MIPI RFFE Specification

Package related information

3

4

5

7

11

Data Sheet

1

Revision 1.1

2019-04-15

BGS16MA12

MIPI 2.0 SP6T switch for LTE diversity, Tx and LAA applications

Features

1 Features

• 0.1 to 6 GHz coverage for LTE and LAA application

• Suitable for LTE / WCDMA / TDCDMA Applications

• LTE TX power handling capabilities

• Ultra low insertion loss: 0.65dB at Band 42

• Small form factor 1.1mm x 1.9mm

• Fully compatible with MIPI 2.0 RFFE standard

• No decoupling capacitors required (Unless DC applied on RF lines)

• Low harmonic generation

• High port-to-port-isolation

• On chip control logic including ESD protection

• No power supply blocking required

• High EMI robustness

• RoHS and WEEE compliant package

Description

This SP6T RF switch is a perfect solution for multimode handsets based on LTE and WCDMA. It is based on Infineon?s

proprietary technology and has excellent RF performance. The ultra-low insertion loss helps customers to achieve high system

sensitivity, the coverage of LTE Tx power and 6 GHz enables very broad application. It features DC-free RF ports, external DC

blocking capacitors at the RF ports are only required if DC voltage is applied externally. Its on chip MIPI RFFE 2.0 controller is

fully compatible with industry standard.

Product Name

Marking

Package

BGS16MA12

B2

ATSLP-12-10

Data Sheet

2

Revision 1.1

2019-04-15

BGS16MA12

MIPI 2.0 SP6T switch for LTE diversity, Tx and LAA applications

Maximum Ratings

2 Maximum Ratings

Table 1: Maximum Ratings, Table I at T_A= 25 ^◦C, unless otherwise specified

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

0.1

0

Typ.

Max.

6.0

2.1

1)

Frequency Range

f

–

GHz

V

Supply voltage ²⁾

V_IO

–

Storage temperature range

RF input power at all TRx ports

ESD capability, CDM ⁴⁾

ESD capability, HBM ⁵⁾

ESD capability, system level (RF port) ⁶⁾

T_STG

P_{RF_max}

-55

–

150

35

^◦C

–

dBm

V

Short momentary / 50Ω

V_ESD

-500

-1

+500

+1

CDM

V_ESD

kV

HBM

V_ESD

-8

+8

ANT vs system GND, with 27 nH

ANT

shunt inductor

–

Junction temperature

T_j

–

125

^◦C

¹⁾Switch has a low-pass response. For higher frequencies, losses have to be considered for their impact on thermal heating. The DC voltage at RF ports V_RFDChas

to be 0V.

²⁾Note: Consider any ripple voltages on top of V_IO. Including RF ripple, V_IOmust not exceed the maximum ratings: V_IO= V_DC+ V_Ripple

.

⁴⁾Field-Induced Charged-Device Model ANSI/ESDA/JEDEC JS-002. Simulates charging/discharging events that occur in production equipment and processes.

Potential for CDM ESD events occurs whenever there is metal-to-metal contact in manufacturing.

⁵⁾Human Body Model ANSI/ESDA/JEDEC JS-001 (R = 1,5 kΩ, C = 100 pF).

⁶⁾IEC 61000-4-2 (R = 330 Ω, C = 150 pF), contact discharge.

Warning: Stresses above the max. values listed here may cause permanent damage to the device. Maximum ratings

are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Expo-

sure to conditions at or below absolute maximum rating but above the specified maximum operation conditions may

aꢀect device reliability and life time. Functionality of the device might not be given under these conditions.

Table 2: Maximum Ratings, Table II at T_A= 25 ^◦C, unless otherwise specified

Parameter

Symbol

Values

Typ.

Unit

Note / Test Condition

Min.

Max.

Thermal resistance junction - soldering R_thJS

point

–

62

K/W

V

–

Maximum DC-voltage on RF-Ports and V_RFDC

0

–

0

No DC voltages allowed on RF-

Ports

RF-Ground

Data Sheet

3

Revision 1.1

2019-04-15

BGS16MA12

MIPI 2.0 SP6T switch for LTE diversity, Tx and LAA applications

Operation ranges

3 Operation ranges

Table 3: Operation ranges at T_A= −40 ^◦C to 85 ^◦C

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

1.65

Typ.

1.8

–

Max.

1.95

V_IO

Supply voltage

V_IO

V_IH

V_IL

V

–

RFFE input high voltage¹

RFFE input low voltage¹

RFFE output high voltage¹

RFFE output low voltage¹

0.7*V_IO

V

–

0

–

0.3*V_IO

V_IO

V

–

V_OH

V_OL

0.8*V_IO

–

V

–

0

–

0.2*V_IO

2

V

–

RFFE control input capacitance C_Ctrl

–

pF

µA

–

Supply current

I_VIO

2

–

Idle State

60

125

Operation state

¹SCLK and SDATA

Table 4: RF input power

Parameter

Symbol

Values

Unit

Note / Test Condition

Min.

–

Typ.

–

Max.

32

RF input power on TRX ports

P_RF

dBm

CW / VSWR 1:1 / 25 ^◦C

CW / VSWR 6:1 / 25 ^◦C

30

Data Sheet

4

Revision 1.1

2019-04-15

BGS16MA12

MIPI 2.0 SP6T switch for LTE diversity, Tx and LAA applications

RF Characteristics

4 RF Characteristics

Table 5: RF Characteristics at T_A= −40 ^◦C...85 ^◦C, P_IN= 0 dBm, Supply Voltage V_IO= 1.65...1.95V, unless otherwise specified.

Open ports are terminated with 50 Ω.

Parameter

Symbol

Values

Typ.

Unit

Note / Test Condition

Min.

Max.

Insertion Loss¹⁾

–

0.30

0.38

0.41

0.46

0.70

0.80

1.30

0.43

0.48

0.49

0.55

0.79

0.85

1.45

dB

698–960 MHz

1428–1920 MHz

1990–2170 MHz

2170–2690 MHz

3400–3600 MHz

3600–3800 MHz

5000–6000 MHz

All TRx Ports

IL

Return Loss¹⁾

22

21

20

16

13

12

8

26

25

23

20

16

15

12

–

dB

698–960 MHz

1428–1920 MHz

1990–2170 MHz

2170–2690 MHz

3400–3600 MHz

3600–3800 MHz

5000–6000 MHz

All TRx Ports

RL

Isolation^{1) 2)}

39

33

32

30

28

22

50

43

49

37

34

33

27

–

dB

698–960 MHz

1428–1920 MHz

1990–2170 MHz

2170–2690 MHz

3400–3600 MHz

3600–3800 MHz

5000–6000 MHz

All TRx Ports

ISO

Harmonic Generation (UMTS Band 1, Band 5)¹⁾

2^ndharmonic generation

3^rdharmonic generation

P_H2

–

-80

-60

-69

-59

dBm

27 dBm, 50 Ω, CW mode

P_H3

Intermodulation Distortion (UMTS Band 1, Band 5)¹⁾

2^ndorder intermodulation

3^rdorder intermodulation

2^ndorder intermodulation

IMD2 low³⁾

IMD3

–

-110

dBm

IMT, US Cell (see Tab. 7)

IMT, US Cell (see Tab. 8)

IMT, US Cell (see Tab. 7)

IMD2 high

¹⁾On application board without any matching components.

²⁾Isolation to inactive ports when one path is active.

³⁾With 27 nH shunt inductor at the ANT.

Data Sheet

5

Revision 1.1

2019-04-15

BGS16MA12

MIPI 2.0 SP6T switch for LTE diversity, Tx and LAA applications

RF Characteristics

Table 6: Switching Time at T_A= 25 ^◦C, P_IN= 0 dBm, Supply Voltage V_IO= 1.65...1.95V, unless otherwise specified

Parameter

Symbol

Values

Typ.

Unit

Note / Test Condition

Min.

Max.

Switching Time

RF Rise Time

t_RT

–

2

µs

10 % to 90 % RF signal

50% last SCLK falling edge to

90% RF signal, see Fig. 1

Switching Time

t_ST

–

3

4.5

25

µs

Power Up Settling Time

t_Pup

10

Aꢀer power down mode

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Figure 1: MIPI to RF time

Table 7: IMD2 Testcases

Band

CW tone 1 (MHz)

CW tone 1 (dBm)

CW tone 2 (MHz)

190 (IMD2 low)

4090 (IMD2 high)

45 (IMD2 low)

CW tone 2 (dBm)

IMT

1950

20

-15

US Cell

835

20

-15

1715 (IMD2 high)

Table 8: IMD3 Testcases

Band

IMT

CW tone 1 (MHz)

1950

835

CW tone 1 (dBm)

20

CW tone 2 (MHz)

1760

790

CW tone 2 (dBm)

-15

US Cell

Data Sheet

6

Revision 1.1

2019-04-15

BGS16MA12

MIPI 2.0 SP6T switch for LTE diversity, Tx and LAA applications

MIPI RFFE Specification

5 MIPI RFFE Specification

All sequences are implemented according to the ’MIPI Alliance Specification for RF Front-End Control Interface’ document

version 2.0 - 25. September 2014.

Table 9: MIPI Features

Feature

Supported

Comment

MIPI RFFE 1.10 and 2.0 standards

Register 0 write command sequence

Register read and write command sequence

Yes

Extended register read and write command se- Yes

quence

Support for standard frequency range operations Yes

for SCLK

Up to 26 MHz for read and write

Up to 52 MHz for write¹⁾

Support for extended frequency range operations Yes

for SCLK

Half speed read

Yes

No

Full speed read

Full speed write

Programmable Group SID

Trigger functionality

Broadcast / GSID write to PM TRIG register

Reset

Via VIO, PM TRIG or soꢀware register¹⁾

Status / error sum register

Extended product ID register

Revision ID register

Group SID register

USID_Sel pin

External pin for changing USID is not implemented

¹⁾only supported by MIPI 2.0 Standard

Table 10: Startup Behavior

Feature

State

Comment

Power status

Power

mode

down Power down mode aꢀer start-up

Trigger function

Enabled

Enabled aꢀer start-up. Programmable via behavior control register

Data Sheet

7

Revision 1.1

2019-04-15

BGS16MA12

MIPI 2.0 SP6T switch for LTE diversity, Tx and LAA applications

MIPI RFFE Specification

Table 11: Register Mapping, Table I

Register

Address

Register Name

Data Function

Bits

Description

Default

Broadcast_ID

Support

Trigger

Support

R/W

0x00

0x1C

SW_CTRL0

PM_TRIG

6:0

7

SW_CTRL0

RF Switch Control

0

1

No

Yes

No

R/W

PWR_MODE(1), Operation Mode

0: Normal operation (ACTIVE)

1: Low Power Mode (LOW POWER)

0: No action (ACTIVE)

Yes

6

5

4

3

PWR_MODE(0), State Bit Vector

TRIGGER_MASK_2

0

1: Powered Reset (STARTUP to ACTIVE

to LOW POWER)

0: Data masked (held in shadow REG)

No

1: Datanotmasked(readyfortransferto

active REG)

TRIGGER_MASK_1

0: Data masked (held in shadow REG)

1: Datanotmasked(readyfortransferto

active REG)

TRIGGER_MASK_0

0: Data masked (held in shadow REG)

1: Datanotmasked(readyfortransferto

active REG)

2

1

TRIGGER_2

TRIGGER_1

TRIGGER_0

PRODUCT_ID

0: No action (data held in shadow REG)

1: Data transferred to active REG

0

Yes

0: No action (data held in shadow REG)

1: Data transferred to active REG

0

0: No action (data held in shadow REG)

1: Data transferred to active REG

0

0x1D

0x1E

0x1F

PRODUCT_ID

MAN_ID

7:0

This is a read-only register. However,

during the programming of the USID a

write command sequence is performed

on this register, even though the write

does not change its value.

0xCC

No

R

7:0

MANUFACTURER_ID [7:0]

This is a read-only register. However,

during the programming of the USID, a

write command sequence is performed

on this register, even though the write

does not change its value.

0x1A

MAN_USID

7:6

5:4

RESERVED

Reserved for future use

00

01

MANUFACTURER_ID [9:8]

These bits are read-only. However, dur-

ing the programming of the USID, a

write command sequence is performed

on this register even though the write

does not change its value.

3:0

USID[3:0]

Programmable USID. Performing

a

0x9

No

R/W

write to this register using the de-

scribed programming sequences will

program the USID in devices support-

ing this feature. These bits store the

USID of the device.

Data Sheet

8

Revision 1.1

2019-04-15

BGS16MA12

MIPI 2.0 SP6T switch for LTE diversity, Tx and LAA applications

MIPI RFFE Specification

Table 12: Register Mapping, Table II

Register

Address

Register Name

Data Function

Bits

Description

Default

Broadcast_ID

Support

Trigger

Support

R/W

0x20

0x21

EXT_PROD_ID¹⁾

REV_ID

7:0

7:4

3:0

7:4

3:0

7

EXT_PRODUCT_ID

0x00

0x4

0x0

0

No

R

MAIN_REVISION

SUB_REVISION

GSID0[3:0]

R/W

0x22

0x23

GSID¹⁾

Primary Group Slave ID.

No

R/W

RESERVED

Reserved for secondary Group Slave ID.

UDR_RST

Reset all configurable non-RFFE Re-

served registers to default values.

0: Normal operation

1: Soꢀware reset

6:0

7

RESERVED

Reserved for future use

0000000

0x24

ERR_SUM¹⁾

RESERVED

0

No

R

6

COMMAND_FRAME_PAR_ERR

Command Sequence received with par-

ity error − discard command.

Command length error.

5

4

3

2

1

COMMAND_LENGTH_ERR

ADDRESS_FRAME_ PAR_ERR

DATA_FRAME_PAR_ERR

READ_UNUSED_REG

WRITE_UNUSED_REG

BID_GID_ERR

0

Address frame with parity error.

Data frame with parity error.

Read command to an invalid address.

Write command to an invalid address.

0

Read command with a BROADCAST_ID

or GROUP_ID.

¹⁾Only supported by MIPI 2.0 Standard

Data Sheet

9

Revision 1.1

2019-04-15

BGS16MA12

MIPI 2.0 SP6T switch for LTE diversity, Tx and LAA applications

MIPI RFFE Specification

Table 13: Modes of Operation (Truth Table, Register_0)

State¹⁾

0

1

Value (Bin.)

00000000

00000001

00000010

00000100

00001000

00010000

00100000

Mode

ALL OFF (Isolation)

RF1 ON

2

3

4

5

6

RF2 ON

RF3 ON

RF4 ON

RF5 ON

RF6 ON

¹⁾Chip state is 0 (isolation) in unused states

Data Sheet

10

Revision 1.1

2019-04-15

BGS16MA12

MIPI 2.0 SP6T switch for LTE diversity, Tx and LAA applications

Package related information

6 Package related information

The switch has a package size of 1100 µm in x-dimension and 1900 µm in y-dimension with a maximum deviation of ±50 µm in each dimension. Fig. 2 shows

the footprint from top view. The definition of each pin can be found in Tab. 15.

Table 14: Mechanical Data

Parameter

Symbol

X

Y

Value

Unit

µm

Package X-Dimension

Package Y-Dimension

Package Height

1100 ± 50

1900 ± 50

0.65 max

H

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ꢐ

ꢑ

ꢒ

ꢅ

ꢏꢐ

ꢏꢏ

ꢏꢘ

ꢗ

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ꢃꢄꢏ

ꢃꢄꢑ

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ꢃꢄꢅ

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ꢍꢎꢊꢎ

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ꢕ

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Figure 2: Footprint, top view

Table 15: Pin Definition

No.

1

Name

VIO

Pin Type

Power

RF

Function

MIPI RFFE Power Supply

RF-Port TRX No. 2

RF-Port TRX No. 4

RF-Port TRX No. 6

Not connected

2

RF2

3

RF4

RF

4

RF6

RF

5

N.C.

ANT

N.C.

RF5

na

6

RF

RF Antenna Port

Not connected

7

na

8

RF

RF-Port TRX No. 5

RF-Port TRX No. 3

RF-Port TRX No. 1

MIPI RFFE Data I/O

MIPI RFFE Clock

Ground (center pin)

9

RF3

RF

10

11

12

GND

RF1

RF

SDATA

SCLK

GND

I/O

Ground

Data Sheet

11

Revision 1.1

2019-04-15

BGS16MA12

MIPI 2.0 SP6T switch for LTE diversity, Tx and LAA applications

Package related information

Figure 3: Package Outline Drawing (top, side and bottom views)

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ꢝꢞꢟꢠ

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Figure 4: Land Pattern Drawing

Data Sheet

12

Revision 1.1

2019-04-15

BGS16MA12

MIPI 2.0 SP6T switch for LTE diversity, Tx and LAA applications

Package related information

ꢀꢁꢂꢃ ꢄꢅꢆꢇꢁꢂꢈ

ꢏꢒꢅꢓꢋꢆꢋꢎꢑ

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Figure 5: Laser marking

ꢟ

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ꢙ

Figure 6: Carrier Tape

Data Sheet

13

Revision 1.1

2019-04-15

BGS16MA12

MIPI 2.0 SP6T switch for LTE diversity, Tx and LAA applications

Package related information

Table 16: Year date code marking - digit "Y"

Year

"Y"

0

1

2

3

4

5

6

7

8

9

Year

2010

2011

2012

2013

2014

2015

2016

2017

2018

2019

"Y"

0

1

2

3

4

5

6

7

8

9

Year

"Y"

0

1

2

3

4

5

6

7

8

9

2000

2001

2002

2003

2004

2005

2006

2007

2008

2009

2020

2021

2022

2023

2024

2025

2026

2027

2028

2029

Table 17: Week date code marking - digit "W"

Week

"W"

Week

"W"

N

P

Q

R

S

T

U

V

W

Y

Week

"W"

4

5

6

7

a

b

c

d

e

f

Week

34

35

36

37

38

39

40

41

42

43

"W"

h

j

k

l

n

p

q

r

Week

45

46

47

48

49

50

"W"

v

x

y

z

8

9

2

3

1

2

3

4

5

6

7

8

9

10

11

A

B

C

D

E

12

13

14

15

16

17

18

19

23

24

25

26

27

28

29

30

31

32

33

F

G

H

J

K

L

51

52

20

21

22

s

t

u

Z

g

44

Data Sheet

14

Revision 1.1

2019-04-15

Revision History

Page or Item

Subjects (major changes since previous revision)

Revision 1.1, 2019-04-15

’NDA Required’ removed

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IMPORTANT NOTICE

Theinformationgiveninthisdocumentshallinnoevent For further information on technology, delivery terms

Edition 2019-04-15

Published by

Infineon Technologies AG

81726 Munich, Germany

be regarded as a guarantee of conditions or characteris- and conditions and prices, please contact the nearest

tics ("Beschaꢁenheitsgarantie"). With respect to any ex- Infineon Technologies Oꢁice (www.infineon.com).

amples, hints or any typical values stated herein and/or

any information regarding the application of the prod-

uct, Infineon Technologies hereby disclaims any and all

warranties and liabilities of any kind, including without

limitationwarrantiesofnon-infringementofintellectual

property rights of any third party. In addition, any infor-

mation given in this document is subject to customer’s

WARNINGS

Due to technical requirements products may contain

dangerous substances. For information on the types

in question please contact your nearest Infineon Tech-

nologies oꢁice.

c

ꢀ 2019 Infineon Technologies AG.

compliance with its obligations stated in this document Except as otherwise explicitly approved by Infineon

and any applicable legal requirements, norms and stan- Technologies in a written document signed by autho-

dards concerning customer’s products and any use of rized representatives of Infineon Technologies, Infineon

the product of Infineon Technologies in customer’s ap- Technologies products may not be used in any applica-

plications. The data contained in this document is ex- tionswhereafailureoftheproductoranyconsequences

clusively intended for technically trained staꢁ. It is the of the use thereof can reasonably be expected to result

responsibility of customer’s technical departments to in personal injury.

Do you have a question about any

aspect of this document?

Email: erratum@infineon.com

evaluate the suitability of the product for the intended

application and the completeness of the product infor-

mation given in this document with respect to such ap-

plication.


型号：	BGS16MA12
厂家：	Infineon
描述：	射频开关开关射频射频开关
文件：	总16页 (文件大小：544K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BGS16MA12 [INFINEON]

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