BGSA20UGL8 [INFINEON]
天线相关器件;
| 型号： | BGSA20UGL8 |
| 厂家： | 
Infineon |
| 描述： | 天线相关器件 |
| 文件： | 总15页 (文件大小：729K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BGSA20UGL8
BGSA20UGL8
High RF Voltage Dual SPST Antenna Aperture Shunt Switch
Features
• Dual SPST designed for high-linearity antenna aperture switching and
RF tuning applications
• Low RON resistance of 2.3 ohm at each port in ON state
• Low COFF capacitance of 200 fF at each port in OFF state
• > 80 V RF voltage OFF state handling
• Low harmonic generation
• GPIO control interface - including 4 control states
• Supply voltage range: 1.65 to 3.6 V
• No RF parameter change within supply voltage range
1.1x1.1mm2
• Small form factor 1.1 mm x 1.1 mm (MSL1, 260◦C per JEDEC J-STD-020)
• Suitable for EDGE/CDMA/WCDMA/C2K/LTE/5G Applications
• RoHS and WEEE compliant package
Application
• Impedance Tuning
• Antenna Tuning
• Inductance Tuning
• Tunable Filters
Product Validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Block diagram
VDD
RF1
RF2
Voltage
Regulator
CTL1
CTL2
Driver
Chargepump
GND
Data Sheet
www.infineon.com
Please read the Important Notice and Warnings at the end of this document
Revision 2.1
2021-06-23
BGSA20UGL8
High RF Voltage Dual SPST Antenna Aperture Shunt Switch
Table of Contents
Table of Contents
Table of Contents
1
2
1
Features
2
3
4
5
6
7
8
Maximum Ratings
DC Characteristics
RF Small Signal Characteristics
RF large signal parameter
Logic Table
3
5
6
7
9
Application Information
Package Information
9
10
Data Sheet
1
Revision 2.1
2021-06-23
BGSA20UGL8
High RF Voltage Dual SPST Antenna Aperture Shunt Switch
Features
1 Features
•
Dual SPST designed for high-linearity antenna aperture switching and
RF tuning applications
• Low RON resistance of 2.3 ohm at each port in ON state
• Low COFF capacitance of 200 fF at each port in OFF state
• > 80 V RF voltage OFF state handling
• Low harmonic generation
• GPIO control interface - including 4 control states
• Supply voltage range: 1.65 to 3.6 V
• No RF parameter change within supply voltage range
• Small form factor 1.1 mm x 1.1 mm (MSL1, 260◦C per JEDEC J-STD-020)
• Suitable for EDGE/CDMA/WCDMA/C2K/LTE/5G Applications
• RoHS and WEEE compliant package
Description
The BGSA20UGL8 is a versatile Dual Single Pole Single Throw (SPST) RF antenna shunt aperture switch optimized for low Co
as well as low Ron enabling applications up to 6.0 GHz. This single supply chip integrates 2 digital control pins. Unlike GaAs
technology, the 0.1 dB compression point exceeds the switch maximum input power level, resulting in linear performance at
all signal levels and external DC blocking capacitors at the RF ports are only required if DC voltage is applied externally. Due
to its very high RF voltage ruggedness, it is suited for switching any reactive devices such as inductors and capacitors in RF
matching circuits without significant losses in quality factors.
Product Name
Marking
Package
Ordering Information
BGSA20UGL8
U
TSLP-8-1
BGSA 20UGL8 E6327
Data Sheet
2
Revision 2.1
2021-06-23
BGSA20UGL8
High RF Voltage Dual SPST Antenna Aperture Shunt Switch
Maximum Ratings
2 Maximum Ratings
Table 1: Maximum Ratings, Table I at TA = 25 ◦C, unless otherwise specified
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
0.4
Typ.
–
–
Max.
–
6
1)
Frequency Range
Supply voltage 2)
f
GHz
V
VDD
-0.5
only for infrequent and short
duration time periods
–
Storage temperature range
RF voltage
TSTG
-55
–
–
–
150
85
◦C
V
VRF_max
Short term peaks (1µs in 0.1%
duty cycle), exceeding typical
linearity, Ron and Coꢀ param-
eters, in Isolation mode, test
condition schematic in Fig. 1
ESD robustness, CDM 3)
ESD robustness, HBM 4)
Junction temperature
VESD
-1
-2
–
–
–
–
–
+1
+2
125
0
kV
kV
◦C
V
CDM
VESD
HBM
Tj
–
Maximum DC-voltage on RF-Ports and RF- VRFDC
0
No DC voltages allowed on RF-
Ground
Ports
–
Control Voltage Levels
VCTL
-0.7
–
3.3
V
1) Switch has a low-pass response. For higher frequencies, losses have to be considered for their impact on thermal heating. The DC voltage at RF ports VRFDC has
to be 0V.
2) Note: Consider potential ripple voltages on top of VDD. Including RF ripple, VDD must not exceed the maximum ratings: VDD = VDC + VRipple
.
3) Field-Induced Charged-Device Model ANSI/ESDA/JEDEC JS-002. Simulates charging/discharging events that occur in production equipment and processes.
Potential for CDM ESD events occurs whenever there is metal-to-metal contact in manufacturing.
4) Human Body Model ANSI/ESDA/JEDEC JS-001 (R = 1,5 kΩ, C = 100 pF).
Warning: Stresses above the max. values listed here may cause permanent damage to the device. Maximum ratings
are absolute ratings; exceeding only one of these values may cause irreversible damage to the integrated circuit. Expo-
sure to conditions at or below absolute maximum rating but above the specified maximum operation conditions may
aꢀect device reliability and life time. Functionality of the device might not be given under these conditions.
Data Sheet
3
Revision 2.1
2021-06-23
BGSA20UGL8
High RF Voltage Dual SPST Antenna Aperture Shunt Switch
Maximum Ratings
50 Ohm
Spectrum
SIGNAL
SOURCE
Analyser
(Hx Monitor)
50 Ohm trasmission line
Vdd
Power
Meter
Vrf
VDD
RF1
RF2
Voltage
Regulator
CTL1
CTL2
Driver
Chargepump
GND
Figure 1: RF operating voltage measurement configuration - All OFF mode. RF1 stressed.
50 Ohm
Spectrum
SIGNAL
SOURCE
Analyser
(Hx Monitor)
50 Ohm trasmission line
Vdd
Power
Meter
Vrf
VDD
RF1
RF2
Voltage
Regulator
CTL1
CTL2
Driver
Chargepump
GND
Figure 2: RF operating voltage measurement configuration - All OFF mode. RF2 stressed.
Data Sheet
4
Revision 2.1
2021-06-23
BGSA20UGL8
High RF Voltage Dual SPST Antenna Aperture Shunt Switch
DC Characteristics
3 DC Characteristics
Table 2: Operation Ranges
Parameter
Symbol
Values
Unit
Note / Test Condition
Min.
1.65
40
0
Typ.
2.8
70
–
Max.
3.6
–
Supply voltage
VDD
V
–
Supply current
IDD
µA
V
–
Control voltage low
Control voltage high
Control current low
Control current high
VCtl,low
VCtl,high
ICtl,low
ICtl,high
0.45
2.85
1
–
1.2
-1
1.8
0
V
VCtl,high ꢀ VDD
–
µA
µA
-1
0
4
VCtl,high ꢀ VDD
1 M
Ω Pull-Down resistor at
Control Pins
Ambient temperature
RF switching time
TA
-40
25
85
8
◦C
–
tST
4.5
µs
PIN = 0 dBm, Z0 = 50 Ω,
TA = −40 ◦C... + 85 ◦C
VDD = 1.65 − 3.6 V
Referring Fig. 3
Startup time
tPup
8
10
µs
VDD Min.
VDD
tPUP
VCtl_H Min.
VCtl
VCtl_L Max.
tST
tST
90%
90%
RF Path A
RF Path B
90%
Figure 3: Switching Time Definition
Data Sheet
5
Revision 2.1
2021-06-23
BGSA20UGL8
High RF Voltage Dual SPST Antenna Aperture Shunt Switch
RF Small Signal Characteristics
4 RF Small Signal Characteristics
Table 3: Parametric specifications using SPST configuration
Parameter
Symbol
Values
Typ.
2.3
Unit
Ω
STATE / Notes
Min.
Max.
2.5
RF1 or RF2 to Ground
ON DC resistance
RF1 or RF2 to Ground
OFF DC resistance
RF1 or RF2 to Ground
OFF capacitance
RON
VDD = 1.65 − 3.6 V,
TA = 25 ◦C
ROFF
290
310
kΩ
fF
COFF
200
230
VDD = 1.65 − 3.6 V, TA = 25 ◦C,
extracted from Isolation (S21) mea-
surement Z0 = 50 Ω
Table 4: RF electrical parameters
Isolation: RF1 to RF2 or RF2 to RF1 (1,2,3)
Parameter
Symbol
Values
Unit
STATE / Notes
Min.
Typ.
53
46
45
44
40
39
Max.
698 - 910 MHz
50
44
43
41
38
36
34
dB
dB
dB
dB
dB
dB
dB
1710 - 1910 MHz
1911 - 2169 MHz
2170 - 2690 MHz
3300 - 3800 MHz
3801 - 4800 MHz
4801 - 6000 MHz
VDD = 1.65 − 3.6 V, Z0 = 50 Ω,
TA = −40 ◦C... + 85 ◦C
ISORF1RF2
38
1) Valid for all RF power levels, no compression behavior
2) SOLT-calibrated, PIN = 0 dBm
3)On application board without any matching components
Data Sheet
6
Revision 2.1
2021-06-23
BGSA20UGL8
High RF Voltage Dual SPST Antenna Aperture Shunt Switch
RF large signal parameter
5 RF large signal parameter
Table 5: RF large signal specifications at TA = 25 ◦C
Parameter
Symbol
Values
Typ.
–
Unit
Note / Test Condition
Min.
–
Max.
80
Max. RF Operating Voltage
VRF_opr
V
In Isolation mode 900 MHz, test con-
dition schematic in Fig. 1 or Fig. 2
for H2/H3 < -30 dBm @ 50Ω
Harmonic Generation up to 12.75 GHz
All RF Ports - Second Order Har- PH2
monics
-77
-85
-58
-71
-58
-70
-67
-78
-65
-79
-66
-81
–
-74
-83
-57
-69
-57
-67
-65
-76
-64
-78
-64
-78
-80
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
dBm
25 dBm, 50
dition in Fig. 1 and Fig. 2
25 dBm, 50 f0 = 663 MHz, test con-
dition in Fig. 1 and Fig. 2
35 dBm, 50 f0 = 920 MHz, test con-
dition in Fig. 1 and Fig. 2
35 dBm, 50 f0 = 920 MHz, test con-
dition in Fig. 1 and Fig. 2
33 dBm, 50 f0 = 1910 MHz, test con-
dition in Fig. 1 and Fig. 2
33 dBm, 50 f0 = 1910 MHz, test con-
dition in Fig. 1 and Fig. 2
25 dBm, 50 f0 = 2690 MHz, test
condition in Fig. 1 and Fig. 2
25 dBm, 50 f0 = 2690 MHz, test
condition in Fig. 1 and Fig. 2
25 dBm, 50 f0 = 3500 MHz, test
condition in Fig. 1 and Fig. 2
25 dBm, 50 f0 = 3500 MHz, test
condition in Fig. 1 and Fig. 2
25 dBm, 50 f0 = 5000 MHz, test
condition in Fig. 1 and Fig. 2
25 dBm, 50 f0 = 5000 MHz, test
Ω, f0 = 663 MHz, test con-
AllRFPorts-ThirdOrderHarmon- PH3
ics
Ω,
All RF Ports - Second Order Har- PH2
monics
Ω,
AllRFPorts-ThirdOrderHarmon- PH3
ics
Ω,
All RF Ports - Second Order Har- PH2
monics
Ω,
AllRFPorts-ThirdOrderHarmon- PH3
ics
Ω,
All RF Ports - Second Order Har- PH2
monics
Ω,
AllRFPorts-ThirdOrderHarmon- PH3
ics
Ω,
All RF Ports - Second Order Har- PH2
monics
Ω,
AllRFPorts-ThirdOrderHarmon- PH3
ics
Ω,
All RF Ports - Second Order Har- PH2
monics
Ω,
AllRFPorts-ThirdOrderHarmon- PH3
ics
Ω,
condition in Fig. 1 and Fig. 2
All RF Ports
PHx
–
25 dBm, 50Ω
Intermodulation Distortion IMD2
IIP2, low
IIP2, high
IIP2,l
IIP2,h
126
129
128
132
132
134
dBm
dBm
IIP2 conditions table 8
IIP3 conditions table 9
Intermodulation Distortion IMD3
IIP3
IIP3
76
77
78
dBm
Data Sheet
7
Revision 2.1
2021-06-23
BGSA20UGL8
High RF Voltage Dual SPST Antenna Aperture Shunt Switch
RF large signal parameter
Table 6: IIP2 conditions table
Band
In-Band Frequency
Blocker Frequency 1
Blocker Power 1
Blocker Frequency 2
Blocker Power 2
[MHz]
2140
[MHz]
1950
[dBm]
20
[MHz]
190
[dBm]
-15
Band 1 Low
Band 1 High
Band 5 Low
Band 5 High
2140
1950
20
4090
45
-15
881.5
881.5
836.5
836.5
20
-15
20
1718
-15
Table 7: IIP3 conditions table
Band
In-Band Frequency
Blocker Frequency 1
Blocker Power 1
Blocker Frequency 2
Blocker Power 2
[MHz]
2140
[MHz]
1950
[dBm]
20
[MHz]
1760
[dBm]
-15
Band 1
Band 5
881.5
836.5
20
791.5
-15
Data Sheet
8
Revision 2.1
2021-06-23
BGSA20UGL8
High RF Voltage Dual SPST Antenna Aperture Shunt Switch
Application Information
6 Logic Table
Table 8: Logic Table
CTL 1
CTL 2
Mode
0
0
1
0
1
RF1 and RF2 isolated from ground
RF2 connected to ground
0
1
RF1 connected to ground
1
RF1 and RF2 connected to ground
7 Application Information
Pin Configuration and Function
NC
RF1
GND
VDD
RF2
1
2
3
8
7
6
5
GND
CTL2
4
CTL1
Figure 4: BGSA20UGL8 Pin Configuration (top view)
Table 9: Pin Definition and Function
Pin No.
1
Name
RF1
Function
RF port
2
3
4
5
6
7
8
GND
VDD
CTL1
CTL2
GND
RF2
Ground
DC Supply Voltage
Control Pin 1
Control Pin 2
Ground
RF port
NC
Not Connected
Table 10: ESD robustness, System Level Test (SLT)
Parameter
Symbol
Values
Typ.
–
Unit
Note / Test Condition
Min.
-8
Max.
+8
ESD SLT 1)
VESD
kV
RF1, RF2 vs system GND, with 27 nH shunt inductor
SLT
1) IEC 61000-4-2 (R = 330 Ω, C = 150 pF), contact discharge.
Data Sheet
9
Revision 2.1
2021-06-23
BGSA20UGL8
High RF Voltage Dual SPST Antenna Aperture Shunt Switch
Package Information
8 Package Information
0.39+-00..0031
1.1±0.05
0.2±0.035
0.1 A
A
4
5
6
7
3
2
1
8
0.4
0.02 MAX.
STAND OFF
INDEX
(LASERED)
ALL DIMENSIONS ARE IN UNITS MM
THE DRAWING IS IN COMPLIANCE WITH ISO 128 & PROJECTION METHOD 1 [
]
Figure 5: TSLP-8-1 Package Outline (top, side and bottom views)
Type code
U
Date code (YW)
Pin 1 marking
Figure 6: Marking Specification (top view): Date code digits Y and W defined in Table 11/12
Data Sheet
10
Revision 2.1
2021-06-23
BGSA20UGL8
High RF Voltage Dual SPST Antenna Aperture Shunt Switch
Package Information
Table 11: Year date code marking - digit "Y"
Year
2010
2011
2012
2013
2014
2015
2016
2017
2018
2019
"Y"
0
1
Year
"Y"
0
1
Year
"Y"
0
1
2020
2021
2022
2023
2024
2025
2026
2027
2028
2029
2030
2031
2032
2033
2034
2035
2036
2037
2038
2039
2
2
2
3
3
3
4
4
4
5
5
5
6
7
6
7
6
7
8
9
8
9
8
9
Table 12: Week date code marking - digit "W"
Week
"W"
Week
"W"
N
P
Week
"W"
4
Week
34
35
"W"
h
j
Week
45
"W"
v
1
A
12
23
2
B
13
24
5
46
47
x
3
C
14
Q
R
25
6
36
37
k
l
y
4
5
D
E
15
26
27
7
48
49
50
51
z
16
S
a
38
39
40
41
n
p
q
r
8
6
7
F
17
T
28
29
30
31
b
c
9
G
H
J
18
U
V
2
8
9
10
11
19
d
e
52
3
20
21
W
Y
42
43
s
53
M
K
32
f
t
L
22
Z
33
g
44
u
Data Sheet
11
Revision 2.1
2021-06-23
BGSA20UGL8
High RF Voltage Dual SPST Antenna Aperture Shunt Switch
Package Information
∅0.25
0.25
0.4
0.4
copper
solder mask
stencil apertures
ALL DIMENSIONS ARE IN UNITS MM
Figure 7: Footprint Recommendation
2
PIN 1
4
0.5
INDEX MARKING
1.25
ALL DIMENSIONS ARE IN UNITS MM
THE DRAWING IS IN COMPLIANCE WITH ISO 128 & PROJECTION METHOD 1 [
]
Figure 8: TSLP-8-1 Carrier Tape
Data Sheet
12
Revision 2.1
2021-06-23
BGSA20UGL8
High RF Voltage Dual SPST Antenna Aperture Shunt Switch
Revision History
Creation of document Revision 2.1, 2021-06-23
Page or Item
Subjects (major changes since previous revision)
-
Release of the final datasheet
Data Sheet
13
Revision 2.1
2021-06-23
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
IMPORTANT NOTICE
Theinformationgiveninthisdocumentshallinnoevent For further information on technology, delivery terms
Edition 2021-06-23
Published by
Infineon Technologies AG
81726 Munich, Germany
be regarded as a guarantee of conditions or characteris- and conditions and prices, please contact the nearest
tics ("Beschaꢀenheitsgarantie"). With respect to any ex- Infineon Technologies Oꢀice (www.infineon.com).
amples, hints or any typical values stated herein and/or
any information regarding the application of the prod-
uct, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without
limitationwarrantiesofnon-infringementofintellectual
property rights of any third party. In addition, any infor-
mation given in this document is subject to customer’s
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Due to technical requirements products may contain
dangerous substances. For information on the types
in question please contact your nearest Infineon Tech-
nologies oꢀice.
c
ꢀ 2021 Infineon Technologies AG.
All Rights Reserved.
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