BGT24LTR22 [INFINEON]
The BGT24LTR22 is a low power, low noise multichannel Silicon Germanium transceiver MMIC for 24GHz radar applications. It provides building blocks for analog signal generation and reception, operating in the frequency range from 24.0 GHz up to 24.25 GHz. The device supports multiple modulation schemes, including FMCW and Doppler. Integrated digital blocks controlling the chip are implemented to support radar system design.;
| 型号： | BGT24LTR22 |
| 厂家： | 
Infineon |
| 描述： | The BGT24LTR22 is a low power, low noise multichannel Silicon Germanium transceiver MMIC for 24GHz radar applications. It provides building blocks for analog signal generation and reception, operating in the frequency range from 24.0 GHz up to 24.25 GHz. The device supports multiple modulation schemes, including FMCW and Doppler. Integrated digital blocks controlling the chip are implemented to support radar system design. |
| 文件： | 总15页 (文件大小：824K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BGT24LTR22
BGT24LTR22
Low Power Multichannel 24GHz Radar MMIC for Smart Sensing
Applications
Features
24 GHz transceiver MMIC (2 TX, 2 RX)
Fully integrated low phase noise VCO
Medium power amplifier with variable output power
Integrated power detectors
Homodyne low noise quadrature receivers
Configurable analog baseband amplification stages
Frequency divider
Low power consumption
Multimode operation (Master/Slave)
Fully ESD protected device
Single ended RF terminals
Single supply voltage 1.5V
WFWLB-52-3 pin plastic package sized 3.63mmx3.63mm
Pb-free (RoHS compliant) package
Potential Applications
Smart home appliances
Drone collision avoidance
Traffic monitoring
Security applications
Description
BGT24LTR22 is a low power, low noise multi-channel Silicon Germanium transceiver MMIC for 24 GHz radar
applications. It provides building blocks for analog signal generation and reception, operating in the frequency
range from 24.0 GHz up to 24.25 GHz. Integrated digital blocks controlling the chip are implemented in order to
support radar system design.
The device is manufactured in Infineon’s B11HFC BiCMOS technology offering a cutoff frequency higher than
300GHz. It is housed in Infineons plastic embedded Wafer Level Ball Grid Array (eWLB) package which can be
processed in standard SMT flow.
Datasheet
www.infineon.com
Please read the Important Notice and Warnings at the end of this document
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Low Power Multichannel 24GHz Radar MMIC for Smart Sensing Applications
Table of Content
Table of Content
Features ........................................................................................................................................ 1
Potential Applications..................................................................................................................... 1
Description .................................................................................................................................... 1
Table of Content............................................................................................................................. 2
1
Electrical Characteristics ........................................................................................................ 3
Absolute Maximum Ratings ....................................................................................................................3
ESD Integrity............................................................................................................................................4
Power Supply...........................................................................................................................................4
TX Section................................................................................................................................................4
RX Section................................................................................................................................................5
Frequency Divider ...................................................................................................................................6
1.1
1.2
1.3
1.4
1.5
1.6
2
2.1
SPI Interface.......................................................................................................................... 7
SPI Timing Requirements........................................................................................................................7
3
Block Diagram and Pin Description........................................................................................... 8
Block Diagram .........................................................................................................................................8
Pin Out .....................................................................................................................................................9
Pin Definition and Function ....................................................................................................................9
3.1
3.2
3.3
4
Package Dimensions and Footprint .........................................................................................11
Datasheet
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Low Power Multichannel 24GHz Radar MMIC for Smart Sensing Applications
Electrical Characteristics
1
Electrical Characteristics
Attention:
Test ■ means that the parameter is not subject to production test. It was verified by design
or characterization respectively.
1.1
Absolute Maximum Ratings
Table 1
Parameter
Absolute Maximum Ratings: TA = -40 °C .. 85°C; all voltages with respect to ground, positive
current flowing into pin (unless otherwise specified)
Symbol
Value
Unit
Note/
Test Condition
Min.
Typ. Max.
Supply voltage
VDD
-0.3
-
VDD,max
+0.3
V
V
DC voltage at RF pins
VDC,RF
0
-
0
DC-short at RF pins (RX1,
RX2, TX1, TX2) to GND
V
V
VTUNE
VDC,I/O
PRF
DC voltage at VCO tuning
pin VTUNE
0
-0.3
-
-
-
-
5
Voltage applied to all
other user I/O pins
VDD
+0.3
dBm
RF input power RX inputs
0
Pins RX1, RX2
mW
°C
PDISS
TSTG
Total power dissipation
-
-
-
500
150
Storage temperature
range
-40
°C
TC
Operational temperature
range
-40
-
-
+85
-
Temperature at package
soldering point
K/W
Rth,P
Thermal resistance of
package
18
Represents bulk silicon to
package solder balls
Attention: Stresses exceeding the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may cause
irreversible damage to the integrated circuit.
Datasheet
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Low Power Multichannel 24GHz Radar MMIC for Smart Sensing Applications
Electrical Characteristics
1.2
ESD Integrity
Table 2
ESD integrity
Parameter
Symbol
Value
Typ.
Unit Note/
Test Condition
Min.
-1
-500
Max.
ESD robustness HBM1
ESD robustness CDM2
VESD-HBM
VESD-CDM
-
-
1
kV
V
All pins
All pins
500
1) According to ANSI/ESDA/JEDEC JS-001 (R = 1.5kOhm, C = 100pF) for Electrostatic Discharge Sensitivity Testing, Human Body Model (HBM)-Component
Level
2) According to ESDA/JEDEC JS-002 Field-Induced Charged Device Model (CDM), Test Method for Electrostatic-Discharge-Withstand Thresholds of
Microelectronic Components
Please note that this result is subject to:
- lot variations within the manufacturing process as specified by Infineon
- changes in the specific test setup
1.3
Power Supply
Table 3
Power Supply Electrical Characteristics: TA = -40 °C .. 85 °C
Parameter
Symbol
Value
Typ.
1.5
Unit
Note/
Test Condition
Min.
1.45
-
Max.
1.6
VDD
Supply voltage
V
IDD_ON
Supply current nominal
operation mode
170
230
mA
SPI Settings – Refer to AN607
SPI Settings – Refer to AN607
SPI Settings – Refer to AN607
IDD_RED
Supply current in reduced
power consumption mode
-
-
135
-
-
mA
mA
IDD_STDBY
Supply current standby-
mode
1
1.4
TX Section
Table 4
Parameter
TX Section Electrical Characteristics: TA = -40 °C .. 85 °C, VDD = 1.45 V .. 1.6 V; all parameters are
for master mode operation (unless otherwise specified)
Symbol
Value
Unit
Note/
Test Condition
Min. Typ. Max.
fVCO
PN
VCO frequency range
VCO phase noise
24.0
-
-
24.25
GHz
-65
-85
-50
-70
-
dBc/Hz
@10kHz offset
@100kHz offset
@100kHz offset
PAM
VCO AM noise
-
-148
0.7
dBc/Hz
V
VTUNE
Tuning voltage to cover
VCO frequency range
0
3
ISM band covered from 0 V to
1.5 V
Datasheet
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Low Power Multichannel 24GHz Radar MMIC for Smart Sensing Applications
Electrical Characteristics
Table 4
TX Section Electrical Characteristics: TA = -40 °C .. 85 °C, VDD = 1.45 V .. 1.6 V; all parameters are
for master mode operation (unless otherwise specified)
Parameter
Symbol
Value
Unit
Note/
Test Condition
Min. Typ. Max.
f /VTUNE
MHz/V
VCO tuning sensitivity
within VCO frequency
range
500
1600 3000
f /T
MHz/K
VCO temperature drift
within VCO frequency
range
-
-5
-
2nd Harmonic suppression
15
-
27
-
∆Pfund,H2
dBc
PSPUR
dBm
VCO nonharmonic
suppression
-55
-40
TX output power1
1
5
9.5
-
PTX1
dBm
dB
∆POUT
TX output power dynamic
range
17
24
ZTX1
TX load impedance
-
50
-
Single-ended at outer edge of
compensation structure on
PCB as indicated in AN607
1.5
RX Section
Table 5
RX Section Electrical Characteristics: TA = -40 °C .. 85 °C, VDD = 1.45 V .. 1.6 V; all parameters are
within master mode operation (unless otherwise specified)
Parameter
Symbol
Value
Min. Typ.
Unit Note/
Test Condition
Max.
24.25
16.5
fRX
RX frequency range
24.0
-
-
GHz
dB
NFSSB
Single-sideband noise
figure1
8
@ fIF = 200 kHz – Bypass Mode
SPI configurable – Refer to
AN607
-
16
-
8.5
25
15.5
33
-
@ fIF = 200 kHz – ABB Mode
SPI configurable – Refer to
AN607
GDC
RF downconverter
conversion gain1
dB
@ fIF = 200 kHz – Bypass Mode
SPI configurable – Refer to
AN607
dB
dBm
dBm
GABB
Analog baseband Gain
0/30/35/40/
45/50/55/60
-19
Configurable via SPI
IP1dB
PLOIN
Input 1 dB compression
point
-
-
-
-
RX in Bypass Mode
LO input power
-10
For slave mode operation
1 Refer to AN607 for more details about parameter variation over temperature
Datasheet 5 of 15
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Low Power Multichannel 24GHz Radar MMIC for Smart Sensing Applications
Electrical Characteristics
Table 5
RX Section Electrical Characteristics: TA = -40 °C .. 85 °C, VDD = 1.45 V .. 1.6 V; all parameters are
within master mode operation (unless otherwise specified)
Parameter
Symbol
Fc-hpf
Value
Min. Typ.
Unit Note/
Test Condition
Max.
Baseband high pass filters
cut off frequency
-
20/50/80/100
-
kHz
Configurable via SPI
1st order, -3 dB definition
4th order, -3 dB definition
Fc-lpf
Baseband low pass filters
cut off frequency
-
600
-
kHz
deg
dB
Quadrature phase
imbalance
P
-10
-1.5
-
-
10
1.5
Quadrature amplitude
imbalance
A
ZIF
IF output impedance
-
-
400
1
-
-
Differential
Differential
ZIFBY
IF output impedance –
k
Bypass Mode
VIFCMD
PSRR
ZRXIN
IF output common mode
voltage
-
-
-
0.75
60
-
-
-
V
IF output power supply
rejection ratio
dB
@ DC
RX input impedance
50
Single-ended at outer edge of
compensation structure on
PCB as indicated in AN607
1.6
Frequency Divider
Table 6
Parameter
Frequency Divider Electrical Characteristics: TA = -40 °C .. 85 °C, VDD = 1.45 V .. 1.6 V,
Freq = 24GHz
Symbol
Value
Unit
Note/
Test Condition
Min.
Typ. Max.
DDIV1
DDIV2
DDIV3
DDIV4
DDIV5
PDIV5
Dividing factor 1
Dividing factor 2
Dividing factor 3
Dividing factor 4
Dividing factor 5
Divider output power
-
2^20
2^16
2^14
2^13
16
-
-
-
selectable via SPI
selectable via SPI
selectable via SPI
selectable via SPI
selectable via SPI
-
-
-
-
-
-
-
-
-
-
-
-13
-5
0
dBm
For dividing factor 5 -
@50 Ohms load
VDIV
Divider output voltage
range
0
-
-
-
VDD
V
For dividing factors 1 to 4
pF
CextLoad
External capacitive load
15
For dividing factors 1 to 4
Datasheet
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BGT24LTR22
Low Power Multichannel 24GHz Radar MMIC for Smart Sensing Applications
SPI Interface
2
SPI Interface
2.1
SPI Timing Requirements
The BGT24LTR22 is configured using a 4-wire SPI interface. It is used to configure the internal modules of the
BGT24LTR22 chip via registers. The main tasks are to set the mode of operation of the TX and/or RX chain and
the baseband section. Communication with an external micro controller is done via the four dedicated pins
SPIDI, SPIDO, SPICS and SPICLK. Figure 1 demonstrates how the timing of the SPI behaves. The “working edge”
is the rising edge of the clock SPICLK. The master application processor presents data for BGT24LTR22 at the
falling edge on SPIDI, BGT24LTR22 samples data at the rising edge. Read data is presented for the master on
the rising edge on SPIDO. Refer to the application note AN607 for all details related to the SPI registers to control
the MMIC.
Note: Asynchronous reset (SPIRST) must be de-asserted at least 10 ns before the falling edge of SPICLK.
tL
T
tT
tch
tcl
SPICS
SPICLK
SPIDI
SPIDO
tds
tmis
tmih
tmos tmoh
tdh
Figure 1
SPI timing diagram
Table 7
SPI Interface timing requirements
Symbol
Parameter
Values
Min. Typ. Max.
Unit
Note /
Test Condition
50MHz, with <1%
clock jitter
SPI clock period
T
20
ns
Clock high time
Clock low time
9
9
5
5
5
1
5
ns
ns
ns
ns
ns
ns
ns
tch
tcl
Setup time SPIDI
Hold time SPIDI
Setup time SPIDO
Hold time SPIDO
Delay time from the output pad
logic
tmos
tmoh
tmis
tmih
tpad_out_dly
Datasheet
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Low Power Multichannel 24GHz Radar MMIC for Smart Sensing Applications
Block Diagram and Pin Description
3
Block Diagram and Pin Description
3.1
Block Diagram
BG VPTAT
VDD
GND
PR1
PR2
ANI
SPIRST
SPIDO
SPIDI
SPICLK
SPICS
Sensor
ADC
SPI
BG
PTAT
IF1I
LPF
HPF
PS
DAC
Power
IF1Ix
Det.
TX1EN
TX1
Trafo
RX1
LNA
PPF
Trafo
IF1Q
LPF
LPF
HPF
HPF
IF1Qx
Power
Splitter
IF2I
IF2Ix
TX2EN
TX2
LNA
Trafo
LPF
RX2
Trafo
PPF
PS
Power
Det.
IF2Q
DAC
HPF
IF2Qx
Trafo
DIV_AO
f-Div
VTUNE
Figure 2
BGT24LTR22 block diagram
Datasheet
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BGT24LTR22
Low Power Multichannel 24GHz Radar MMIC for Smart Sensing Applications
Block Diagram and Pin Description
3.2
Pin Out
BGT24LTR22
Top View
: VDD
9
NC
IF2Q
IF2Qx
VDD
GND
GND
GND
GND
IF1Qx
VDD
IF1Q
BG
NC
IF1I
: GND & Thermal Pads
: Preset Pins
: TX RF Pins
: RX IF Pins
8
7
6
5
4
3
2
1
PR2
ANI
IF2I
RX2
IF2Ix
IF1Ix
TX2EN
GND
RX1
GND
PR1
GND
GND
GND
TX1
: RX RF Pins
: VCO/PLL Pins
: TX EN/DIS Pins
: SPI Pins
GND
GND
GND
VPTAT VDD
SPIDI
VTUNE TX1EN
VDD
GND
TX2
GND
GND SPIRSTN SPICLK
: BandGap Pins
: Test Pins
NC
VDD DIV_AO
GND
GND SPICS SPIDO
NC
A
B
C
D
E
F
G
H
J
Not Connected Pins
:
Figure 3
Pin out (top view)
3.3
Pin Definition and Function
Table 8
Pin definition and function
Pin Number
Name
Function
A1, A9, J1, J9
NC
No connection
DC supply voltage
B1, B3, C2, C8, G8
VDD
RX1
RX2
TX2
H5
E8
E2
RF input - receiver 1
RF input - receiver 2
Bidirectional RF I/O
RF output – transmitter 2/LO input 2
Bidirectional RF I/O
B5
TX1
RF output – transmitter 1/LO input 1
J8, J7
H9, G9
A8, A7
IF1I, IF1Ix
IF1Q, IF1Qx
IF2I, IF2Ix
Complementary in phase downconverter IF
output – receiver 1
Complementary quadrature phase
downconverter IF output - receiver 1
Complementary in-phase downconverter IF
output – receiver 2
Datasheet
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Low Power Multichannel 24GHz Radar MMIC for Smart Sensing Applications
Block Diagram and Pin Description
Table 8
Pin definition and function
Pin Number
B9, C9
Name
Function
IF2Q, IF2Qx
Complementary quadrature phase
downconverter IF output - receiver 2
A4, A6, B4, B6, D1, D2, D8, D9, F1, F2, F8, GND
F9, G2*, H4, H6, J4, J6
Ground
H3
B8
C1
B2
H7
H8
A2
A3
G1
H1
H2
J2
PR1
Mode select – pin 1
PR2
Mode select - pin 2
DIV_AO
TX1EN
TX2EN
BG
Frequency divider output
Enable transmitter 1
Enable transmitter 2
Bandgap voltage output
VCO frequency tuning input
PTAT voltage source output
SPI chip select (spi_cs_i)
SPI data out (spi_do_o)
SPI reset
VTUNE
VPTAT
SPICS
SPIDO
SPIRST
SPICLK
SPIDI
ANI
SPI clock (spi_clk_i)
SPI data in (spi_di_i)
Analog input for testing
J3
B7
Note:
It is mandatory to connect Pin G2 to ground for SPI programming
Datasheet
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Low Power Multichannel 24GHz Radar MMIC for Smart Sensing Applications
Package Dimensions and Footprint
4
Package Dimensions and Footprint
Figure 4
Package outline. Top, side and bottom view of WFWLB-52-3
Datasheet
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Low Power Multichannel 24GHz Radar MMIC for Smart Sensing Applications
Package Dimensions and Footprint
Figure 5
Marking layout of WFWLB-52-3
Datasheet
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Low Power Multichannel 24GHz Radar MMIC for Smart Sensing Applications
Package Dimensions and Footprint
Figure 6
Tape and reel of WFWLB-52-3
Datasheet
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Low Power Multichannel 24GHz Radar MMIC for Smart Sensing Applications
Package Dimensions and Footprint
Revision history
Document
version
Date of release
Description of changes
V1.0
dd/mm/2020
First release
Datasheet
14 of 15
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Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
IMPORTANT NOTICE
The information given in this document shall in no For further information on the product, technology,
Edition 2020-01-26
event be regarded as a guarantee of conditions or delivery terms and conditions and prices please
Published by
characteristics (“Beschaffenheitsgarantie”) .
contact your nearest Infineon Technologies office
(www.infineon.com).
Infineon Technologies AG
81726 München, Germany
With respect to any examples, hints or any typical
values stated herein and/or any information
regarding the application of the product, Infineon
Technologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement of
intellectual property rights of any third party.
WARNINGS
Due to technical requirements products may contain
dangerous substances. For information on the types
in question please contact your nearest Infineon
Technologies office.
© 2020 Infineon Technologies AG.
All Rights Reserved.
Do you have a question about this
document?
In addition, any information given in this document
is subject to customer’s compliance with its
obligations stated in this document and any
applicable legal requirements, norms and standards
concerning customer’s products and any use of the
product of Infineon Technologies in customer’s
applications.
Except as otherwise explicitly approved by Infineon
Technologies in a written document signed by
authorized
representatives
of
Infineon
Email: erratum@infineon.com
Technologies, Infineon Technologies’ products may
not be used in any applications where a failure of the
product or any consequences of the use thereof can
reasonably be expected to result in personal injury.
Document reference
ifx1
The data contained in this document is exclusively
intended for technically trained staff. It is the
responsibility of customer’s technical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
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