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BPW34FS

更新时间：2024-09-18 02:05:53
品牌：INFINEON
描述：Silizium-PIN-Fotodiode mit Tageslichtsperrfilter

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BPW34FS 概述

Silizium-PIN-Fotodiode mit Tageslichtsperrfilter Silizium - PIN- Fotodiode MIT Tageslichtsperrfilter 光电二极管

BPW34FS 规格参数

是否Rohs认证： 不符合生命周期：Obsolete
Reach Compliance Code：unknown风险等级：5.9
最大暗电源：30 nAJESD-609代码：e0
安装特点：SURFACE MOUNT最高工作温度：80 °C
最低工作温度：-40 °C光电设备类型：PIN PHOTODIODE
最长响应时间：2e-8 s最大反向电压：32 V
半导体材料：Silicon子类别：Photo Diodes
表面贴装：YES端子面层：Tin/Lead (Sn/Pb)
Base Number Matches：1

BPW34FS 数据手册

通过下载BPW34FS数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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Silizium-PIN-Fotodiode mit Tageslichtsperrfilter  
NEU: in SMT und als Reverse Gullwing  
Silicon PIN Photodiode with Daylight Filter  
NEW: in SMT and as Reverse Gullwing  
BPW 34 F  
BPW 34 FS  
BPW 34 FS (E9087)  
5.4  
Cathode marking  
4.9  
4.5  
4.3  
Chip position  
4.0  
3.7  
0.6  
0.6  
0.4  
0.4  
0.35  
0.2  
0.5  
0.3  
0.8  
0.6  
0 ... 5˚  
5.08 mm  
spacing  
BPW 34 F  
Photosensitive area  
2.65 mm x 2.65 mm  
Approx. weight 0.1 g  
GEO06643  
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.  
Wesentliche Merkmale  
Features  
● Speziell geeignet für Anwendungen  
bei 950 nm  
● Especially suitable for applications  
of 950 nm  
● kurze Schaltzeit (typ. 20 ns)  
● DIL-Plastikbauform mit hoher  
Packungsdichte  
● BPW 34 FS/(E9087); geeignet für  
Vapor-Phase Löten und IR-Reflow Löten  
● Short switching time (typ. 20 ns)  
● DIL plastic package with high packing density  
● BPW 34 FS/(E9087); suitable for vapor-  
phase and IR-reflow soldering  
Anwendungen  
Applications  
● IR-Fernsteuerung von Fernseh- und  
Rundfunkgeräten, Videorecordern,  
Gerätefernsteuerungen  
● IR remote control of hi-fi and TV sets,  
video tape recorders, remote controls of  
various equipment  
● Lichtschranken für Gleich- und  
Wechsellichtbetrieb  
● Photointerrupters  
Semiconductor Group  
1
1998-08-27  
BPW 34 F, BPW 34 FS  
BPW 34 FS (E9087)  
1.1  
0.9  
Chip position  
6.7  
6.2  
4.5  
4.3  
1.8±0.2  
BPW 34 FS  
Photosensitive area  
Cathode lead  
2.65 mm x 2.65 mm  
GEO06863  
Chip position  
1.1  
0.9  
6.7  
6.2  
4.5  
4.3  
1.8±0.2  
BPW 34 FAS (E9087)  
Photosensitive area  
2.65 mm x 2.65 mm  
Cathode lead  
GEO06916  
Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.  
Typ  
Type  
Bestellnummer  
Ordering Code  
BPW 34 F  
Q62702-P929  
Q62702-P1604  
BPW 34 FS  
BPW 34 FS (E9087) Q62702-P1826  
Semiconductor Group  
2
1998-08-27  
BPW 34 F, BPW 34 FS  
BPW 34 FS (E9087)  
Grenzwerte  
Maximum Ratings  
Bezeichnung  
Description  
Symbol  
Symbol  
Wert  
Value  
Einheit  
Unit  
Betriebs- und Lagertemperatur  
Top; Tstg  
– 40 ... + 85  
°C  
Operating and storage temperature range  
Sperrspannung  
Reverse voltage  
VR  
32  
V
Verlustleistung, TA = 25 °C  
Ptot  
150  
mW  
Total power dissipation  
Kennwerte (TA = 25 °C, λ = 950 nm)  
Characteristics  
Bezeichnung  
Description  
Symbol  
Symbol  
Wert  
Value  
Einheit  
Unit  
Fotoempfindlichkeit  
Spectral sensitivity  
VR = 5 V, Ee = 1 mW/cm  
50 (≥ 40)  
µA  
S
2
Wellenlänge der max. Fotoempfindlichkeit  
Wavelength of max. sensitivity  
λS max  
λ
950  
nm  
nm  
Spektraler Bereich der Fotoempfindlichkeit  
S = 10 % von Smax  
780 ... 1100  
Spectral range of sensitivity  
S = 10 % of Smax  
2
Bestrahlungsempfindliche Fläche  
Radiant sensitive area  
A
7.00  
mm  
Abmessung der bestrahlungsempfindlichen  
Fläche  
L × B  
2.65 × 2.65  
mm × mm  
Dimensions of radiant sensitive area  
L × W  
Halbwinkel  
Half angle  
ϕ
± 60  
Grad  
deg.  
Dunkelstrom, VR = 10 V  
Dark current  
IR  
Sλ  
η
2 (≤ 30)  
0.59  
nA  
Spektrale Fotoempfindlichkeit  
Spectral sensitivity  
A/W  
Quantenausbeute  
Quantum yield  
0.77  
Electrons  
Photon  
2
Leerlaufspannung, Ee = 0.5 mW/cm  
VO  
330 (≥ 275)  
mV  
Open-circuit voltage  
Semiconductor Group  
3
1998-08-27  
BPW 34 F, BPW 34 FS  
BPW 34 FS (E9087)  
Kennwerte (TA = 25 °C, λ = 950 nm)  
Characteristics (cont’d)  
Bezeichnung  
Description  
Symbol  
Symbol  
Wert  
Value  
Einheit  
Unit  
2
Kurzschlußstrom, Ee = 0.5 mW/cm  
ISC  
25  
µA  
Short-circuit current  
Anstiegs- und Abfallzeit des Fotostromes  
Rise and fall time of the photocurrent  
tr, tf  
20  
ns  
RL = 50 Ω; VR = 5 V; λ = 850 nm; Ip = 800 µA  
Durchlaßspannung, IF = 100 mA, E = 0  
VF  
1.3  
V
Forward voltage  
Kapazität, VR = 0 V, f = 1 MHz, E = 0  
C0  
72  
pF  
Capacitance  
Temperaturkoeffizient von VO  
Temperature coefficient of VO  
TCV  
TCI  
NEP  
– 2.6  
0.18  
4.3 × 10  
mV/K  
%/K  
Temperaturkoeffizient von ISC  
Temperature coefficient of ISC  
– 14  
12  
Rauschäquivalente Strahlungsleistung  
Noise equivalent power  
VR = 10 V  
W
√Hz  
Nachweisgrenze, VR = 10 V  
D*  
6.2 × 10  
cm · √Hz  
Detection limit  
W
Semiconductor Group  
4
1998-08-27  
BPW 34 F, BPW 34 FS  
BPW 34 FS (E9087)  
Relative spectral sensitivity  
Photocurrent I = f (E ), V = 5 V  
Total power dissipation  
P
e
R
S
= f (λ)  
Open-circuit voltage V = f (E )  
P
= f (T )  
rel  
O
e
tot  
A
OHF00368  
10 3  
OHF01097 10 4  
mV  
OHF00958  
100  
160  
mW  
µ
A
Srel  
Ι P  
P
%
tot  
140  
120  
100  
80  
80  
10 2  
10 3  
VO  
60  
40  
20  
10 1  
10 2  
Ι P  
60  
10 0  
10 1  
10 0  
40  
20  
0
700  
10 -1  
0
0
10 0  
10 1  
10 2  
µ
W/cm 2  
10 4  
nm  
800  
900  
1000  
1200  
20  
40  
60  
80 ˚C 100  
λ
TA  
Ee  
Dark current  
= f (V ), E = 0  
Capacitance  
Dark current  
I = f (T ), V = 10 V, E = 0  
R
I
C = f (V ), f = 1 MHz, E = 0  
R
R
R
A
R
OHF00080  
OHF00082  
OHF00081  
10 3  
nA  
4000  
100  
Ι R  
Ι R  
C
pF  
80  
70  
60  
50  
40  
30  
20  
10  
0
pA  
10 2  
10 1  
10 0  
10 -1  
3000  
2000  
1000  
0
10 -2  
10 -1  
10 0  
10 1  
V
10 2  
0
20  
40  
60  
80 ˚C 100  
TA  
0
5
10  
15  
V
20  
VR  
VR  
Directional characteristics S = f (ϕ)  
rel  
40  
30  
20  
10  
0
OHF01402  
ϕ
1.0  
50  
0.8  
0.6  
0.4  
60  
70  
0.2  
0
80  
90  
100  
1.0  
0.8  
0.6  
0.4  
0
20  
40  
60  
80  
100  
120  
Semiconductor Group  
5
1998-08-27  

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