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BS107 [INFINEON]

SIPMOS Small-Signal Transistor; SIPMOS小信号晶体管
BS107
型号： BS107
厂家： Infineon    Infineon
描述：

SIPMOS Small-Signal Transistor
SIPMOS小信号晶体管

晶体 小信号场效应晶体管 开关
文件： 总7页 (文件大小：89K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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BS 107  
®
SIPMOS Small-Signal Transistor  
• N channel  
• Enhancement mode  
• Logic Level  
• V  
= 0.8...2.0V  
GS(th)  
Pin 1  
S
Pin 2  
G
Pin 3  
D
Type  
Package  
Marking  
VDS  
200 V  
ID  
RDS(on)  
Ω
BS 107  
0.13 A  
26  
TO-92  
BS 107  
Type  
Ordering Code  
Tape and Reel Information  
BS 107  
Q67000-S078  
E6288  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Drain source voltage  
Drain-gate voltage  
V
200  
V
DS  
V
DGR  
Ω
= 20 k  
R
200  
GS  
Gate source voltage  
V
±
20  
GS  
ESD Sensitivity (HBM) as per MIL-STD 883  
Continuous drain current  
Class 1  
I
A
D
T = 31 ˚C  
0.13  
0.52  
1
A
DC drain current, pulsed  
I
Dpuls  
T = 25 ˚C  
A
Power dissipation  
P
W
tot  
T = 25 ˚C  
A
Data Sheet  
1
05.99  
BS 107  
Maximum Ratings  
Parameter  
Symbol  
Values  
Unit  
Chip or operating temperature  
Storage temperature  
T
-55 ... + 150  
-55 ... + 150  
˚C  
j
T
stg  
1)  
≤
Thermal resistance, chip to ambient air  
DIN humidity category, DIN 40 040  
IEC climatic category, DIN IEC 68-1  
R
125  
K/W  
thJA  
E
55 / 150 / 56  
Electrical Characteristics,  
Parameter  
at T = 25˚C, unless otherwise specified  
j
Symbol  
min.  
Values  
typ.  
Unit  
max.  
Static Characteristics  
Drain- source breakdown voltage  
= 0 V, I = 0.25 mA, T = 25 ˚C  
V
V
I
V
(BR)DSS  
GS(th)  
V
200  
0.8  
-
-
GS  
D
j
Gate threshold voltage  
I = 1 mA  
V
=V  
GS DS, D  
1.5  
2
Zero gate voltage drain current  
DSS  
V
V
V
V
= 200 V, V = 0 V, T = 25 ˚C  
-
0.1  
1
µA  
DS  
DS  
DS  
DS  
GS  
j
= 200 V, V = 0 V, T = 125 ˚C  
-
-
-
2
-
60  
30  
1
GS  
j
= 130 V, V = 0 V, T = 25 ˚C  
nA  
µA  
nA  
GS  
j
= 70 V, V = 0.2 V, T = 25 ˚C  
-
GS  
j
Gate-source leakage current  
= 20 V, V = 0 V  
I
GSS  
V
-
1
10  
GS  
DS  
Drain-Source on-state resistance  
R
Ω
DS(on)  
V
V
= 4.5 V, I = 0.12 A  
-
-
14  
26  
28  
GS  
GS  
D
= 2.8 V, I = 0.02 A  
14.5  
D
Data Sheet  
2
05.99  
BS 107  
Electrical Characteristics,  
Parameter  
at T = 25˚C, unless otherwise specified  
j
Symbol  
min.  
Values  
typ.  
Unit  
max.  
Dynamic Characteristics  
Transconductance  
g
S
fs  
V
≥
2 I  
R I = 0.12 A  
0.06  
0.17  
60  
-
DS  
* D * DS(on)max, D  
Input capacitance  
= 0 V, V = 25 V, f = 1 MHz  
C
C
C
t
pF  
iss  
V
-
80  
12  
5
GS  
DS  
Output capacitance  
= 0 V, V = 25 V, f = 1 MHz  
oss  
rss  
V
-
-
8
GS  
DS  
Reverse transfer capacitance  
= 0 V, V = 25 V, f = 1 MHz  
V
3.5  
GS  
DS  
Turn-on delay time  
= 30 V, V = 10 V, I = 0.24 A  
ns  
d(on)  
V
DD  
GS  
D
R = 50  
Ω
-
-
-
-
5
8
G
Rise time  
= 30 V, V = 10 V, I = 0.24 A  
t
t
t
r
V
DD  
GS  
D
R = 50  
Ω
8
12  
16  
20  
G
Turn-off delay time  
= 30 V, V = 10 V, I = 0.24 A  
d(off)  
V
DD  
GS  
D
R = 50  
Ω
12  
15  
G
Fall time  
f
V
= 30 V, V = 10 V, I = 0.24 A  
GS D  
DD  
R = 50  
Ω
G
Data Sheet  
3
05.99  
BS 107  
Electrical Characteristics,  
Parameter  
at T = 25˚C, unless otherwise specified  
j
Symbol  
min.  
Values  
typ.  
Unit  
max.  
Reverse Diode  
Inverse diode continuous forward current  
I
I
A
S
T = 25 ˚C  
-
-
-
-
0.13  
0.52  
1.2  
A
Inverse diode direct current,pulsed  
SM  
T = 25 ˚C  
-
A
Inverse diode forward voltage  
V
V
SD  
V
= 0 V, I = 0.5 A  
0.9  
GS  
F
Data Sheet  
4
05.99  
BS 107  
Power dissipation  
Drain current  
ƒ
ƒ
I = (T )  
D A  
P
= (T )  
tot  
A
≥
parameter: V  
4 V  
GS  
1.2  
W
0.14  
A
0.12  
1.0  
0.9  
0.8  
0.7  
0.6  
0.5  
0.4  
0.3  
0.2  
0.1  
Ptot  
ID  
0.11  
0.10  
0.09  
0.08  
0.07  
0.06  
0.05  
0.04  
0.03  
0.02  
0.01  
0.00  
0.0  
0
20  
40  
60  
80 100 120  
˚C  
160  
0
20  
40  
60  
80 100 120  
˚C  
160  
TA  
TA  
Safe operating area ID=f(VDS  
)
Drain-source breakdown voltage  
ƒ
parameter : D = 0.01, TC=25˚C  
V
= (T )  
(BR)DSS  
j
240  
V
230  
V(BR)DSS  
225  
220  
215  
210  
205  
200  
195  
190  
185  
180  
-60  
-20  
20  
60  
100  
˚C  
Tj  
160  
Data Sheet  
5
05.99  
BS 107  
Typ. output characteristics  
Typ. drain-source on-resistance  
ƒ(  
ƒ(  
I = V  
)
R
= I )  
D
DS  
DS (on)  
D
parameter: t = 80 µs , T = 25 ˚C  
parameter: t = 80 µs, T = 25 ˚C  
p
j
p
j
80  
0.30  
A
P
tot = 1W  
k
a
b
c
l
i
h
g
j
e
f
d
Ω
0.26  
0.24  
0.22  
0.20  
0.18  
0.16  
0.14  
0.12  
0.10  
0.08  
0.06  
0.04  
V
[V]  
GS  
a
ID  
RDS (on)  
2.0  
2.5  
3.0  
3.5  
4.0  
4.5  
5.0  
6.0  
7.0  
8.0  
9.0  
60  
50  
40  
30  
20  
b
c
d
e
f
c
g
h
i
j
k
l
b
10.0  
d
e
f
g
h
k
i
j
l
V
[V] =  
b
GS  
a
10  
0
c
d
e
f
g
h
i
j
k
l
a
0.02  
0.00  
2.0 2.5 3.0 3.5 4.0 4.5  
5.0 6.0 7.0 8.0 9.0 10.0  
0
2
4
6
8
V
11  
0.00 0.02 0.04 0.06 0.08 0.10 0.12 0.14  
A
0.18  
VDS  
ID  
Typ. transfer characteristics  
Typ. forward transconductance  
I = f(V  
)
g = f (I )  
D
GS  
fs  
D
parameter: t = 80 µs  
parameter: t = 80 µs,  
p
p
≥
2 x I x R  
DS D DS(on)max  
V
≥
2 x I x R  
V
DS  
D
DS(on)max  
0.40  
A
0.30  
S
0.26  
0.24  
0.22  
0.20  
0.18  
0.16  
0.14  
0.12  
0.10  
0.08  
0.06  
0.04  
ID  
gfs  
0.30  
0.25  
0.20  
0.15  
0.10  
0.05  
0.00  
0.02  
0.00  
0
1
2
3
4
5
6
7
8
V
VGS  
10  
0.00  
0.05  
0.10  
0.15  
0.20  
A
ID  
0.30  
Data Sheet  
6
05.99  
BS 107  
Drain-source on-resistance  
Gate threshold voltage  
ƒ
ƒ
= (T )  
GS (th) j  
R
= (T )  
V
DS (on)  
j
parameter: I = 0.12 A, V = 4.5 V  
parameter: V = V , I = 1 mA  
GS DS D  
D
GS  
65  
4.6  
V
Ω
4.0  
55  
50  
45  
40  
35  
30  
25  
20  
15  
10  
RDS (on)  
VGS(th)  
3.6  
3.2  
2.8  
2.4  
2.0  
1.6  
1.2  
0.8  
98%  
typ  
98%  
typ  
2%  
0.4  
0.0  
5
0
-60  
-20  
20  
60  
100  
˚C  
Tj  
160  
-60  
-20  
20  
60  
100  
˚C  
Tj  
160  
Typ. capacitances  
C = f (V  
Forward characteristics of reverse diode  
ƒ
)
I = (V  
)
SD  
DS  
F
parameter: T , t = 80 µs  
parameter:V =0V, f = 1 MHz  
j
p
GS  
10 3  
10 0  
pF  
A
C
IF  
10 2  
10 1  
10 0  
10 -1  
10 -2  
10 -3  
Ciss  
Coss  
Tj = 25 ˚C typ  
Tj = 150 ˚C typ  
Tj = 25 ˚C (98%)  
Tj = 150 ˚C (98%)  
Crss  
0
5
10  
15  
20  
25  
30  
V
VDS  
40  
0.0  
0.4  
0.8  
1.2  
1.6  
2.0  
2.4  
V
VSD  
3.0  
Data Sheet  
7
05.99  

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