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BSB104N08NP3 G [INFINEON]

OptiMOS™ 系列是高效率解决方案的市场领导者，适用于发电（例如太阳能微逆变器）、电源（例如服务器和通信）以及功耗（例如电动车）领域。;
BSB104N08NP3 G
型号： BSB104N08NP3 G
厂家： Infineon    Infineon
描述：

OptiMOS™ 系列是高效率解决方案的市场领导者，适用于发电（例如太阳能微逆变器）、电源（例如服务器和通信）以及功耗（例如电动车）领域。

通信 服务器
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BSB104N08NP3ꢀG  
MOSFET  
MG-WDSON-2-6  
OptiMOSª3ꢀPower-MOSFET,ꢀ80ꢀV  
Features  
•ꢀOptimizedꢀtechnologyꢀforꢀDC/DCꢀconverters  
•ꢀExcellentꢀgateꢀchargeꢀxꢀRDS(on)ꢀproductꢀ(FOM)  
•ꢀLowꢀprofileꢀ(<0.7mm)  
•ꢀDualꢀsidedꢀcooling  
•ꢀLowꢀparasiticꢀinductance  
•ꢀN-channel,ꢀnormalꢀlevel  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
Value  
Unit  
VDS  
80  
V
Gate  
Source  
RDS(on),max  
ID  
10.4  
50  
mΩ  
A
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
BSB104N08NP3 G  
MG-WDSON-2  
0308  
-
Final Data Sheet  
1
Rev.ꢀ2.2,ꢀꢀ2018-11-15  
OptiMOSª3ꢀPower-MOSFET,ꢀ80ꢀV  
BSB104N08NP3ꢀG  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Final Data Sheet  
2
Rev.ꢀ2.2,ꢀꢀ2018-11-15  
OptiMOSª3ꢀPower-MOSFET,ꢀ80ꢀV  
BSB104N08NP3ꢀG  
1ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
-
-
-
-
-
-
50  
32  
13  
VGS=10ꢀV,ꢀTC=25ꢀ°C  
Continuous drain current  
ID  
A
VGS=10ꢀV,ꢀTC=100ꢀ°C  
VGS=10ꢀV,ꢀTA=25ꢀ°C,ꢀRthJA=45ꢀK/W1)  
Pulsed drain current2)  
Avalanche energy, single pulse3)  
ID,pulse  
EAS  
-
-
-
-
200  
110  
20  
A
TC=25ꢀ°C  
-
mJ  
V
ID=30ꢀA,ꢀRGS=25ꢀΩ  
Gate source voltage  
VGS  
-20  
-
-
-
-
-
42  
2.8  
TC=25ꢀ°C  
Power dissipation  
Ptot  
W
TA=25ꢀ°C,ꢀRthJA=45ꢀK/W1)  
Operating and storage temperature  
Tj,ꢀTstg  
-40  
-
150  
°C  
-
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Thermal resistance, junction - case,  
bottom  
RthJC  
RthJC  
RthJA  
-
1.0  
-
K/W  
K/W  
K/W  
-
-
-
Thermal resistance, junction - case,  
top  
-
-
-
-
3.0  
45  
Device on PCB,  
6 cm2 cooling area1)  
1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain  
connection. PCB is vertical in still air.  
2) See Diagram 3 for more detailed information  
3) See Diagram 13 for more detailed information  
Final Data Sheet  
3
Rev.ꢀ2.2,ꢀꢀ2018-11-15  
OptiMOSª3ꢀPower-MOSFET,ꢀ80ꢀV  
BSB104N08NP3ꢀG  
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
80  
Max.  
-
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
VGS(th)  
V
V
VGS=0ꢀV,ꢀID=1ꢀmA  
VDS=VGS,ꢀID=40ꢀµA  
2.0  
2.7  
3.5  
-
-
0.1  
10  
10  
100  
VDS=80ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C  
VDS=80ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C  
Zero gate voltage drain current  
IDSS  
µA  
nA  
Gate-source leakage current  
Drain-source on-state resistance  
Gate resistance  
IGSS  
RDS(on)  
RG  
-
10  
9.3  
2
100  
VGS=20ꢀV,ꢀVDS=0ꢀV  
-
10.4  
mΩ VGS=10ꢀV,ꢀID=10ꢀA  
-
-
-
Ω
-
Transconductance  
gfs  
23  
46  
S
|VDS|>2|ID|RDS(on)max,ꢀID=30ꢀA  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance  
Ciss  
Coss  
Crss  
-
-
-
1600 2100 pF  
VGS=0ꢀV,ꢀVDS=40ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=40ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=40ꢀV,ꢀf=1ꢀMHz  
Output capacitance  
430  
29  
570  
44  
pF  
pF  
Reverse transfer capacitance  
VDD=40ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
9
-
-
-
-
ns  
ns  
ns  
ns  
VDD=40ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,  
RG,ext=1.6ꢀΩ  
4
VDD=40ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-off delay time  
Fall time  
19  
4
VDD=40ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,  
RG,ext=1.6ꢀΩ  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics1)ꢀ  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
8
Max.  
11  
8
Gate to source charge  
Gate to drain charge  
Switching charge  
Gate charge total  
Gate plateau voltage  
Output charge  
Qgs  
-
-
-
-
-
-
nC  
nC  
nC  
nC  
V
VDD=40ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=40ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=40ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=40ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=40ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=40ꢀV,ꢀVGS=0ꢀV  
Qgd  
5
Qsw  
Qg  
8
13  
31  
-
23  
5.0  
31  
Vplateau  
Qoss  
42  
nC  
1) See ″Gate charge waveforms″ for parameter definition  
Final Data Sheet  
4
Rev.ꢀ2.2,ꢀꢀ2018-11-15  
OptiMOSª3ꢀPower-MOSFET,ꢀ80ꢀV  
BSB104N08NP3ꢀG  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
-
Max.  
30  
200  
1.2  
-
Diode continuous forward current  
Diode pulse current  
IS  
-
-
-
-
-
A
TC=25ꢀ°C  
IS,pulse  
VSD  
trr  
-
A
TC=25ꢀ°C  
Diode forward voltage  
0.9  
43  
55  
V
VGS=0ꢀV,ꢀIF=30ꢀA,ꢀTj=25ꢀ°C  
VR=40ꢀV,ꢀIF=30ꢀA,ꢀdiF/dt=100ꢀA/µs  
VR=40ꢀV,ꢀIF=30ꢀA,ꢀdiF/dt=100ꢀA/µs  
Reverse recovery time  
Reverse recovery charge  
ns  
nC  
Qrr  
-
Final Data Sheet  
5
Rev.ꢀ2.2,ꢀꢀ2018-11-15  
OptiMOSª3ꢀPower-MOSFET,ꢀ80ꢀV  
BSB104N08NP3ꢀG  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀDrainꢀcurrent  
50  
60  
50  
40  
30  
20  
10  
0
40  
30  
20  
10  
0
0
20  
40  
60  
80  
100  
120  
140  
160  
0
20  
40  
60  
80  
100  
120  
140  
160  
TCꢀ[°C]  
TCꢀ[°C]  
Ptot=f(TC)  
ID=f(TC);ꢀVGS≥10ꢀV  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
103  
101  
1 µs  
102  
101  
10 µs  
100 µs  
0.5  
100  
0.2  
0.1  
1 ms  
10 ms  
DC  
100  
0.05  
10-1  
0.02  
10-1  
0.01  
10-2  
10-2  
single pulse  
10-1  
100  
101  
102  
10-6  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
6
Rev.ꢀ2.2,ꢀꢀ2018-11-15  
OptiMOSª3ꢀPower-MOSFET,ꢀ80ꢀV  
BSB104N08NP3ꢀG  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
200  
20  
10 V  
175  
5 V  
8 V  
6 V  
5.5 V  
16  
12  
8
150  
125  
100  
8 V  
10 V  
6 V  
75  
50  
25  
0
5.5 V  
4
5 V  
4.5 V  
0
0
1
2
3
4
5
0
25  
50  
75  
100  
125  
150  
175  
200  
VDSꢀ[V]  
IDꢀ[A]  
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance  
200  
100  
175  
150  
125  
100  
75  
80  
60  
40  
20  
0
50  
25  
150 °C  
25 °C  
0
0
1
2
3
4
5
6
7
8
0
20  
40  
60  
80  
100  
120  
VGSꢀ[V]  
IDꢀ[A]  
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max,ꢀTj=25ꢀ°C  
gfs=f(ID),ꢀVDS=3ꢀV,ꢀTj=25ꢀ°C  
Final Data Sheet  
7
Rev.ꢀ2.2,ꢀꢀ2018-11-15  
OptiMOSª3ꢀPower-MOSFET,ꢀ80ꢀV  
BSB104N08NP3ꢀG  
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance  
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage  
20  
3.5  
3.0  
400 µA  
16  
2.5  
40 µA  
max  
12  
2.0  
1.5  
1.0  
0.5  
0.0  
typ  
8
4
0
-60  
-20  
20  
60  
100  
140  
180  
-80  
-40  
0
40  
80  
120  
160  
Tjꢀ[°C]  
Tjꢀ[°C]  
RDS(on)=f(Tj),ꢀID=20ꢀA,ꢀVGS=10ꢀV  
VGS(th=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID  
Diagramꢀ11:ꢀTyp.ꢀcapacitances  
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
104  
103  
25 °C  
25°C, max  
150°C  
150°C, max  
Ciss  
103  
102  
101  
102  
101  
100  
Coss  
Crss  
0
10  
20  
30  
40  
50  
60  
70  
80  
0.00  
0.50  
1.00  
1.50  
2.00  
VDSꢀ[V]  
VSDꢀ[V]  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz  
IF=f(VSD);ꢀparameter:ꢀTj  
Final Data Sheet  
8
Rev.ꢀ2.2,ꢀꢀ2018-11-15  
OptiMOSª3ꢀPower-MOSFET,ꢀ80ꢀV  
BSB104N08NP3ꢀG  
Diagramꢀ13:ꢀAvalancheꢀcharacteristics  
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge  
102  
10  
40 V  
64 V  
16 V  
8
6
4
2
0
101  
25 °C  
100 °C  
125 °C  
100  
100  
101  
102  
103  
104  
0
5
10  
15  
20  
25  
tAVꢀ[µs]  
Qgateꢀ[nC]  
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start  
VGS=f(Qgate),ꢀID=30ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD  
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage  
Diagram Gate charge waveforms  
88  
86  
84  
82  
80  
78  
76  
74  
-80  
-40  
0
40  
80  
120  
160  
Tjꢀ[°C]  
VBR(DSS)=f(Tj);ꢀID=1ꢀmA  
Final Data Sheet  
9
Rev.ꢀ2.2,ꢀꢀ2018-11-15  
OptiMOSª3ꢀPower-MOSFET,ꢀ80ꢀV  
BSB104N08NP3ꢀG  
5ꢀꢀꢀꢀꢀPackageꢀOutlines  
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀTapeꢀ(CanPAKꢀM)  
Final Data Sheet  
10  
Rev.ꢀ2.2,ꢀꢀ2018-11-15  
OptiMOSª3ꢀPower-MOSFET,ꢀ80ꢀV  
BSB104N08NP3ꢀG  
Figureꢀ2ꢀꢀꢀꢀꢀOutlineꢀBoardpadsꢀ(CanPAKꢀM)  
Final Data Sheet  
11  
Rev.ꢀ2.2,ꢀꢀ2018-11-15  
OptiMOSª3ꢀPower-MOSFET,ꢀ80ꢀV  
BSB104N08NP3ꢀG  
Figureꢀ3ꢀꢀꢀꢀꢀOutlineꢀMG-WDSON-2,ꢀdimensionsꢀinꢀmm/inches  
Final Data Sheet  
12  
Rev.ꢀ2.2,ꢀꢀ2018-11-15  
OptiMOSª3ꢀPower-MOSFET,ꢀ80ꢀV  
BSB104N08NP3ꢀG  
RevisionꢀHistory  
BSB104N08NP3 G  
Revision:ꢀ2018-11-15,ꢀRev.ꢀ2.2  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
Update model  
2.2  
2018-11-15  
Trademarks  
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Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis  
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe  
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.  
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s  
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct  
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.  
Information  
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon  
TechnologiesꢀOfficeꢀ(www.infineon.com).  
Warnings  
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,  
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.  
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or  
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa  
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand  
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.  
Final Data Sheet  
13  
Rev.ꢀ2.2,ꢀꢀ2018-11-15  

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