BSB165N15NZ3 G [INFINEON]

与次优竞品相比，150V OptiMOS™ R DS(on) 降低 40%，品质因数 (FOM) 降低 45%。这一显著改进创造了全新的可能性，如从引脚封装转变为 SMD 封装或使用一个 OptiMOS™ 部件有效替换两个原有部件。;


型号：	BSB165N15NZ3 G
厂家：	Infineon
描述：	与次优竞品相比，150V OptiMOS™ R DS(on) 降低 40%，品质因数 (FOM) 降低 45%。这一显著改进创造了全新的可能性，如从引脚封装转变为 SMD 封装或使用一个 OptiMOS™ 部件有效替换两个原有部件。
文件：	总13页 (文件大小：1649K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

n-Channel Power MOSFET

OptiMOS™

BSB165N15NZ3 G

Data Sheet

2.2, 2011-07-20

Final

Industrial & Multimarket

OptiMOS™ Power-MOSFET

BSB165N15NZ3 G

Description

OptiMOS™150V products are class leading power MOSFETs for highest power

density and energy efficient solutions. Ultra low gate- and output charges together

with lowest on state resistance in small footprint packages make OptiMOS™

150V the best choice for the demanding requirements of voltage regulator

solutions in Solar, Drives, Datacom and Telecom applications. Super fast

switching Control FETs together with low EMI Sync FETs provide solutions that

are easy to design in. OptiMOS™ products are available in high performance

packages to tackle your most challenging applications giving full flexibility in

optimizing space, efficiency and cost.

Features

•

Optimized for high switching frequency DC/DC converter

Very low on-resistance R_DS(on)

Excellent gate charge x R_DS(on)product (FOM)

Pb-free plating; RoHS compliant

Halogen-free according to IEC61249-2-21

Double sided cooling

Compatible with DirectFET® package MZ footprint and outline

Low parasitic inductance

Low profile (<0.7 mm)

Applications

•

Synchronous rectification

Primary side switches

Power managment for high performance computing

High power density point of load converters

Table 1

Parameter

V_DS

Key Performance Parameters

Value

150

16.5

Unit

Related Links

IFX OptiMOS webpage

IFX OptiMOS product brief

IFX OptiMOS spice models

IFX Design tools

R_DS(on),max

mΩ

I_D

Q_OSS

Q_g._typ

Type

Package

MG-WDSON-2

Marking

BSB165N15NZ3 G

0115

Final Data Sheet

2.2, 2011-07-20

OptiMOS™ Power-MOSFET

BSB165N15NZ3 G

Maximum ratings

at T_j= 25 °C, unless otherwise specified.

Table 2

Maximum ratings

Parameter

Symbol

Values

Unit Note / Test Condition

Min. Typ. Max.

Continuous drain current

I_D

V_GS=10 V, T_C=25 °C

_GS=10 V, T_C=100 °C

_GS=10 V, T_A=25 °C,

_thJA=45 K/W)¹⁾

Pulsed drain current²⁾

Avalanche energy, single pulse

Gate source voltage

I_D,pulse

E_AS

180

440

T_C=25 °C

I_D=30 A,R_GS=25 Ω

V_GS

P_tot

-20

Power dissipation

T_C=25 °C

T_A=25 °C, R_thJA=45 K/W¹⁾

2.8

150

Operating and storage temperature T_j,T_stg

-40

°C

IEC climatic category; DIN IEC 68-1

55/150/56

1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain connection.

PCB is vertical in still air.

2) See figure 3 for more detailed information

Thermal characteristics

Table 3

Thermal characteristics

Symbol

Parameter

Values

Typ.

Unit

Note /

Test Condition

Min.

Max.

1.6

Thermal resistance, junction - case R_thJC

R_thJA

K/W

top

bottom

6 cm²cooling area¹⁾

Device on PCB

1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70µ, thick) copper area for drain conneciton.

PCB is vertical in still air.

Final Data Sheet

2.2, 2011-07-20

OptiMOS™ Power-MOSFET

BSB165N15NZ3 G

Electrical characteristics

Electrical characteristics, at Tj=25 °C, unless otherwise specified.

Table 4

Static characteristics

Symbol

Parameter

Values

Unit

Note / Test Condition

Min.

Drain-source breakdown voltage V_(BR)DSS150

Typ.

Max.

V_GS=0 V, I_D=1.0 mA

V_DS=V_GS, I_D=110 µA

Gate threshold voltage

V_GS(th)

I_DSS

Zero gate voltage drain current

0.1

µA

V_DS=120 V, V_GS=0 V,

T_j=25 °C

100

V_DS=120 V, V_GS=0 V,

T_j=125 °C

Gate-source leakage current

I_GSS

100

16.5

17.9

V_GS=20 V, V_DS=0 V

V_GS=10 V, I_D=30A

V_GS=8 V, I_D=15A

Drain-source on-state resistance R_DS(on)

13.1

mΩ

Gate resistance

R_G

g_fs

0.7

Transconductance

|V_DS|>2|I_D|RDS(on)max

I_D=30 A

Table 5

Dynamic characteristics

Parameter

Symbol

Values

Unit

Note /

Test Condition

Min.

Typ.

2100

240

Max.

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

C_iss

C_oss

C_rss

t_d(on)

t_r

2800

V_GS=0 V, V_DS=75V,

f=1 MHz

320

V_DD=75V, V_GS=10 V,

I_D=30 A, R_G= 1.6 Ω

Turn-off delay time

Fall time

t_d(off)

t_f

Final Data Sheet

2.2, 2011-07-20

OptiMOS™ Power-MOSFET

BSB165N15NZ3 G

Electrical characteristics

Table 6

Gate charge characteristics¹⁾

Symbol

Parameter

Values

Typ.

Unit

Note /

Test Condition

Min.

Max.

Gate to source charge

Gate to drain charge

Switching charge

Gate charge total

Gate plateau voltage

Output charge

Q_gs

V_DD=75 V,

I_D=30 A,

V_GS=0 to 10 V

Q_gd

Q_sw

5.2

Q_g

V_plateau

Q_oss

V_DD=75 V, V_GS=0 V

1) See figure 16 for gate charge parameter definition

Table 7

Reverse diode characteristics

Symbol

Parameter

Values

Unit

Note /

Test Condition

Min.

Typ.

Max.

Diode continuous forward current I_s

T_C=25 °C

Diode pulse current

I_S,pulse

180

1.2

Diode forward voltage

V_SD

0.9

V_GS=0 V, I_F=45 A,

T_j=25 °C

Reverse recovery time

t_rr

110

337

V_R=75 V, I_F=30A,

di_F/dt=100 A/µs

Reverse recovery charge

Q_rr

Final Data Sheet

2.2, 2011-07-20

OptiMOS™ Power-MOSFET

BSB165N15NZ3 G

Electrical characteristics diagrams

Table 8

1 Power dissipation

2 Drain current

P_tot= f(T_C)

I_D=f(T_C); parameter:V_GS

Table 9

3 Safe operating area T_C=25 °C

4 Max. transient thermal impedance

I_D=f(V_DS); T_j=25 °C; D=0; parameter: T_p

Z_(thJC)=f(t_p); parameter: D=t_p/T

Final Data Sheet

2.2, 2011-07-20

OptiMOS™ Power-MOSFET

BSB165N15NZ3 G

Electrical characteristics diagrams

Table 10

5 Typ. output characteristics T_C=25 °C

6 Typ. drain-source on-state resistance

I_D=f(V_DS); T_j=25 °C; parameter: V_GS

R_DS(on)=f(I_D); T_j=25 °C; parameter: V_GS

Table 11

7 Typ. transfer characteristics

8 Typ. forward transconductance

I_D=f(VGS); |V_DS|>2|I_D|R_DS(on)max

g_fs=f(I_D); T_j=25 °C

Final Data Sheet

2.2, 2011-07-20

OptiMOS™ Power-MOSFET

BSB165N15NZ3 G

Electrical characteristics diagrams

Table 12

9 Drain-source on-state resistance

10 Typ. gate threshold voltage

_DS(on)=f(T_j); I_D=30 A; V_GS=10 V

V_GS(th)=f(T_j); V_GS=V_DS; I_D=250 µA

Table 13

12 Forward characteristics of reverse diode

11 Typ. capacitances

C=f(V_DS); V_GS=0 V; f=1 MHz

I_F=f(V_SD); parameter: T_j

Final Data Sheet

2.2, 2011-07-20

OptiMOS™ Power-MOSFET

BSB165N15NZ3 G

Electrical characteristics diagrams

Table 14

13 Avalanche characteristics

14 Typ. gate charge

I_AS=f(t_AV); R_GS=25 Ω; parameter: T_j(start)

V_GS=f(Q_gate); I_D=30 A pulsed; parameter: V_DD

Table 15

15 Drain-source breakdown voltage

16 Gate charge waveforms

_BR(DSS)=f(T_j); I_D=1 mA

Final Data Sheet

2.2, 2011-07-20

OptiMOS™ Power-MOSFET

BSB165N15NZ3 G

Package outlines

Figure 1

Outlines MG-WDSON-2, dimensions in mm/inches

Final Data Sheet

2.2, 2011-07-20

OptiMOS™ Power-MOSFET

BSB165N15NZ3 G

Package outlines

Figure 2

Outlines MG-WDSON-2, dimensions in mm/inches

Final Data Sheet

2.2, 2011-07-20

OptiMOS™ Power-MOSFET

BSB165N15NZ3 G

Package outlines

Figure 3

Outlines MG-WDSON-2, dimensions in mm/inches

Marking layout

Final Data Sheet

2.2, 2011-07-20

OptiMOS™ Power-MOSFET

BSB165N15NZ3 G

Revision History

Revision History: 2011-07-20, 2.1

Previous Revision:

Revision Subjects (major changes since last revision)

0.1

2.0

2.2

Release of target data sheet

Release Final version

Insert Marking layout

We Listen to Your Comments

Any information within this document that you feel is wrong, unclear or missing at all?

Your feedback will help us to continuously improve the quality of this document.

Please send your proposal (including a reference to this document) to: erratum@infineon.com

Edition 2011-07-20

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or

characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any

information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties

and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights

of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please contact the nearest

Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information on the types in

question, please contact the nearest Infineon Technologies Office.

The Infineon Technologies component described in this Data Sheet may be used in life-support devices or

systems and/or automotive, aviation and aerospace applications or systems only with the express written approval

of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that

life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that

device or system. Life support devices or systems are intended to be implanted in the human body or to support

and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the

user or other persons may be endangered

Final Data Sheet

2.2, 2011-07-20

BSB165N15NZ3 G [INFINEON]

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