BSC004NE2LS5 [INFINEON]
凭借 OptiMOSTM 5 功率 MOSFET 25V，英飞凌提供了标杆解决方案：无论是在待机状态还是完全运行状态下，都能实现高功率密度和高能源效率。采用 SuperSO8 封装的 BSC004NE2LS5 提供了 0.45mOhm 的 BiC RDS(on)。;
| 型号： | BSC004NE2LS5 |
| 厂家： | 
Infineon |
| 描述： | 凭借 OptiMOSTM 5 功率 MOSFET 25V，英飞凌提供了标杆解决方案：无论是在待机状态还是完全运行状态下，都能实现高功率密度和高能源效率。采用 SuperSO8 封装的 BSC004NE2LS5 提供了 0.45mOhm 的 BiC RDS(on)。 |
| 文件： | 总12页 (文件大小：1525K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSC004NE2LS5
MOSFET
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ25ꢀV
PG-TDSON-8
8
7
5
6
Features
6
7
5
8
•ꢀOptimizedꢀforꢀOR-ingꢀapplication
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)ꢀ@ꢀVGS=4.5ꢀV
•ꢀ100%ꢀavalancheꢀtested
Pin 1
•ꢀSuperiorꢀthermalꢀresistance
•ꢀN-channel
4
3
2
2
3
4
•ꢀPb-freeꢀleadꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
1
Productꢀvalidation
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications
Drain
Pin 5-8
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
*1
Gate
Pin 4
Parameter
Value
Unit
Source
Pin 1-3
VDS
25
V
*1: Internal body diode
RDS(on),max
ID
0.45
479
70
mΩ
A
Qoss
nC
nC
QG(0V..4.5V)
135
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
04NE2LS5
RelatedꢀLinks
BSC004NE2LS5
PG-TDSON-8 FL
-
Final Data Sheet
1
Rev.ꢀ2.2,ꢀꢀ2022-10-24
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ25ꢀV
BSC004NE2LS5
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Final Data Sheet
2
Rev.ꢀ2.2,ꢀꢀ2022-10-24
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ25ꢀV
BSC004NE2LS5
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
-
-
479
338
40
VGS=10ꢀV,ꢀTC=25ꢀ°C
Continuous drain current1)
ID
A
VGS=10ꢀV,ꢀTC=100ꢀ°C
VGS=4.5V,TA=25°C,RthJA=50°C/W2)
Pulsed drain current3)
Avalanche energy, single pulse4)
ID,pulse
EAS
-
-
-
-
1914
400
20
A
TA=25ꢀ°C
-
mJ
V
ID=20ꢀA,ꢀRGS=25ꢀΩ
Gate source voltage
VGS
-20
-
-
-
-
-
188
2.5
TC=25ꢀ°C
Power dissipation
Ptot
W
TA=25ꢀ°C,ꢀRthJA=50ꢀ°C/W2)
IEC climatic category; DIN IEC 68-1:
55/175/56
Operating and storage temperature
Tj,ꢀTstg
-55
-
175
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case,
bottom
RthJC
RthJC
RthJA
-
-
-
-
0.8
°C/W -
°C/W -
°C/W -
Thermal resistance, junction - case,
top
-
-
20
50
Device on PCB,
6 cm² cooling area
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See Diagram 3 for more detailed information
4) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.ꢀ2.2,ꢀꢀ2022-10-24
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ25ꢀV
BSC004NE2LS5
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
-
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
25
Max.
-
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
1.0
1.5
2.0
VDS=VGS,ꢀID=250ꢀµA
-
-
0.1
10
1.0
100
VDS=20ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=20ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
IDSS
µA
nA
IGSS
-
10
100
VGS=16ꢀV,ꢀVDS=0ꢀV
-
-
0.40
0.54
0.45
0.85
VGS=10ꢀV,ꢀID=30ꢀA
VGS=4.5ꢀV,ꢀID=30ꢀA
RDS(on)
mΩ
Gate resistance
RG
gfs
-
-
0.7
-
-
Ω
-
Transconductance
230
S
|VDS|≥2|ID|RDS(on)max,ꢀID=30ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Ciss
Coss
Crss
-
-
-
11000 -
pF
pF
pF
VGS=0ꢀV,ꢀVDS=12.5ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=12.5ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=12.5ꢀV,ꢀf=1ꢀMHz
Output capacitance
3600
3100
-
-
Reverse transfer capacitance
VDD=12.5ꢀV,ꢀVGS=4.5ꢀV,ꢀID=30ꢀA,
RG,ext=1.6ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
28
88
68
93
-
-
-
-
ns
ns
ns
ns
VDD=12.5ꢀV,ꢀVGS=4.5ꢀV,ꢀID=30ꢀA,
RG,ext=1.6ꢀΩ
VDD=12.5ꢀV,ꢀVGS=4.5ꢀV,ꢀID=30ꢀA,
RG,ext=1.6ꢀΩ
Turn-off delay time
Fall time
VDD=12.5ꢀV,ꢀVGS=4.5ꢀV,ꢀID=30ꢀA,
RG,ext=1.6ꢀΩ
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics1)ꢀ
Values
Typ.
24
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Qgs
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
nC
nC
nC
nC
nC
V
VDD=12.5ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=12.5ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=12.5ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=12.5ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=12.5ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=12.5ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDD=12.5ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDS=12.5ꢀV,ꢀVGS=0ꢀV
Qg(th)
Qgd
15
69
Qsw
Qg
78
Gate charge total
135
2.2
Gate plateau voltage
Gate charge total
Vplateau
Qg
238
70
nC
nC
Output charge
Qoss
1) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.ꢀ2.2,ꢀꢀ2022-10-24
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ25ꢀV
BSC004NE2LS5
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
-
Max.
188
1914
1.0
Diode continuous forward current
Diode pulse current
IS
-
-
-
-
A
TC=25ꢀ°C
IS,pulse
VSD
Qrr
-
A
TC=25ꢀ°C
Diode forward voltage
0.77
30
V
VGS=0ꢀV,ꢀIF=30ꢀA,ꢀTj=25ꢀ°C
VR=12.5ꢀV,ꢀIF=IS,ꢀdiF/dt=400ꢀA/µs
Reverse recovery charge
-
nC
Final Data Sheet
5
Rev.ꢀ2.2,ꢀꢀ2022-10-24
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ25ꢀV
BSC004NE2LS5
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
200
500
175
150
125
100
75
400
300
200
100
0
50
25
0
0
25
50
75
100
125
150
175
200
0
25
50
75
100
125
150
175
200
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
104
101
single pulse
0.01
0.02
0.05
0.1
0.2
0.5
1 µs
103
102
101
100
10-1
10 µs
100
10-1
10-2
100 µs
1 ms
10 ms
DC
10-1
100
101
102
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.2,ꢀꢀ2022-10-24
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ25ꢀV
BSC004NE2LS5
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
2000
1.4
2.8 V
10 V
5 V
3 V
3.5 V
4.5 V
1750
1500
1250
1000
750
500
250
0
1.2
4 V
1.0
0.8
0.6
0.4
0.2
0.0
4 V
4.5 V
5 V
3.5 V
10 V
3 V
2.8 V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
200
400
600
800
1000
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
2000
1.4
1750
1500
1250
1000
750
500
250
0
1.2
1.0
0.8
25 °C
175 °C
175 °C
0.6
0.4
0.2
0.0
25 °C
0
1
2
3
4
5
0
2
4
6
8
10
VGSꢀ[V]
VGSꢀ[V]
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
RDS(on)=f(VGS),ꢀID=30ꢀA;ꢀparameter:ꢀTj
Final Data Sheet
7
Rev.ꢀ2.2,ꢀꢀ2022-10-24
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ25ꢀV
BSC004NE2LS5
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
2.0
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0.00
1.6
1.2
0.8
0.4
0.0
2500 µA
250 µA
-80
-40
0
40
80
120
160
200
-80
-40
0
40
80
120
160
200
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj),ꢀID=30ꢀA,ꢀVGS=10ꢀV
VGS(th=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
105
104
25 °C
25 °C, max
175 °C
175 °C, max
103
102
101
Coss
104
Ciss
Crss
103
0
5
10
15
20
25
0.00
0.25
0.50
0.75
1.00
1.25
1.50
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.2,ꢀꢀ2022-10-24
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ25ꢀV
BSC004NE2LS5
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
102
10
5 V
12 V
20 V
8
6
4
2
0
101
25 °C
100 °C
150 °C
100
100
101
102
103
104
0
40
80
120
160
200
240
280
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start
VGS=f(Qgate),ꢀID=30ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
28
27
26
25
24
23
-80
-40
0
40
80
120
160
200
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.2,ꢀꢀ2022-10-24
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ25ꢀV
BSC004NE2LS5
5ꢀꢀꢀꢀꢀPackageꢀOutlines
PACKAGE - GROUP
NUMBER:
PG-TDSON-8-U04
MILLIMETERS
DIMENSIONS
MIN.
0.90
0
MAX.
1.20
0.05
0.54
0.35
5.35
4.40
3.25
5.38
6.10
3.76
0.89
A
A1
b
0.26
0.15
4.80
3.70
2.94
5.05
5.70
3.43
0.69
c
D
D1
D2
D3
E
E1
E2
e
1.27
L
0.45
0.69
0.10
0.66
0.90
0.25
L1
aaa
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TDSON-8ꢀFL,ꢀdimensionsꢀinꢀmm
Final Data Sheet
10
Rev.ꢀ2.2,ꢀꢀ2022-10-24
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ25ꢀV
BSC004NE2LS5
Figureꢀ2ꢀꢀꢀꢀꢀOutlineꢀBoardpadsꢀ(TDSON-8ꢀFL)
Final Data Sheet
11
Rev.ꢀ2.2,ꢀꢀ2022-10-24
OptiMOSTMꢀ5ꢀPower-Transistor,ꢀ25ꢀV
BSC004NE2LS5
RevisionꢀHistory
BSC004NE2LS5
Revision:ꢀ2022-10-24,ꢀRev.ꢀ2.2
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.0
2.1
2.2
Release of final version
2020-04-23
2021-03-08
2022-10-24
Update Id condition for EAS and VGS(th)
Update outline drawing
Trademarks
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warrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.
Information
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon
TechnologiesꢀOfficeꢀ(www.infineon.com).
Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
12
Rev.ꢀ2.2,ꢀꢀ2022-10-24
相关型号：
BSC005N03LS5
凭借 OptiMOSTM 5 功率 MOSFET 30V，英飞凌提供了标杆解决方案：无论是在待机状态还是完全运行状态下，都能实现高功率密度和高能源效率。采用 SuperSO8 封装的 BSC004NE2LS5 提供了 0.55mOhm 的 BiC RDS(on)。
INFINEON
BSC005N03LS5I
凭借 OptiMOSTM 5 功率 MOSFET 30V，英飞凌提供了标杆解决方案：无论是在待机状态还是完全运行状态下，都能实现高功率密度和高能源效率。采用 SuperSO8 封装的 BSC004NE2LS5 提供了 0.55mOhm 的 BiC RDS(on)。
INFINEON
BSC007N04LS6SC
OptiMOS™ 6 power MOSFETs 40 V in SuperSO8 DSC (dual-side cooling) package offer all thermal management benefits of dual-side cooling solutions with industry-standard footprint.
INFINEON
BSC009N04LSSC
OptiMOS™ 5 power MOSFETs 40 V in SuperSO8 DSC (dual-side cooling) package offer all thermal management benefits of dual-side cooling solutions with industry-standard footprint.
INFINEON
BSC009NE2LS
英飞凌凭借全新的 OptiMOS™ 25V 产品系列，为分离功率 MOSFET设定了功率密度和能源效率的新标准。OptiMOS™ 25V 具有极低接通电阻，采用小体积封装，特别适用于要求极高的电池管理、Or-ing、电熔丝和热交换应用。超级 SO8 封装具有标准体积，与 IPB009N03L 相比，支持更薄更小的应用解决方案。
INFINEON
BSC010N04LS6
Power Field-Effect Transistor, 100A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TDSON-8
INFINEON
BSC010N04LSATMA1
Power Field-Effect Transistor, 38A I(D), 40V, 0.0013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
INFINEON
BSC010N04LSC
The BSC010N04LSC is the perfect choice for battery powered tools. The OptiMOS™ 5 40V technology also provides the best performance for synchronous rectification in switched mode power supplies (SMPS), commonly found in servers and desktops, and a broad range of industrial applications including telecom, solar micro inverters and fast switching DC-DC converters.
INFINEON
BSC010N04LSIATMA1
Power Field-Effect Transistor, 37A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8, 8 PIN
INFINEON
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