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BSC009NE2LS [INFINEON]

英飞凌凭借全新的 OptiMOS™ 25V 产品系列，为分离功率 MOSFET设定了功率密度和能源效率的新标准。OptiMOS™ 25V 具有极低接通电阻，采用小体积封装，特别适用于要求极高的电池管理、Or-ing、电熔丝和热交换应用。超级 SO8 封装具有标准体积，与 IPB009N03L 相比，支持更薄更小的应用解决方案。;
BSC009NE2LS
型号： BSC009NE2LS
厂家： Infineon    Infineon
描述：

英飞凌凭借全新的 OptiMOS™ 25V 产品系列，为分离功率 MOSFET设定了功率密度和能源效率的新标准。OptiMOS™ 25V 具有极低接通电阻，采用小体积封装，特别适用于要求极高的电池管理、Or-ing、电熔丝和热交换应用。超级 SO8 封装具有标准体积，与 IPB009N03L 相比，支持更薄更小的应用解决方案。

电池 电熔丝
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BSC009NE2LS  
MOSFET  
OptiMOSTMꢀPower-MOSFET,ꢀ25ꢀV  
SuperSO8  
5
8
6
7
7
Features  
6
5
8
•ꢀOptimizedꢀforꢀe-fuseꢀandꢀORingꢀapplication  
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)ꢀ@ꢀVGS=4.5ꢀV  
•ꢀ100%ꢀavalancheꢀtested  
•ꢀSuperiorꢀthermalꢀresistance  
4
3
•ꢀN-channel  
1
•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC1)ꢀꢀforꢀtargetꢀapplications  
•ꢀPb-freeꢀleadꢀꢀplating;ꢀRoHSꢀcompliant  
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21  
2
2
3
1
4
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
S 1  
8 D  
7 D  
Parameter  
Value  
Unit  
S 2  
S 3  
G 4  
VDS  
25  
V
6 D  
5 D  
RDS(on),max  
ID  
0.9  
mΩ  
A
255  
38  
QOSS  
nC  
nC  
QG(0V..10V)  
126  
Typeꢀ/ꢀOrderingꢀCode  
Package  
Marking  
RelatedꢀLinks  
BSC009NE2LS  
PG-TDSON-8  
009NE2LS  
-
1) J-STD20 and JESD22  
Final Data Sheet  
1
Rev.ꢀ2.5,ꢀꢀ2020-06-17  
OptiMOSTMꢀPower-MOSFET,ꢀ25ꢀV  
BSC009NE2LS  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Final Data Sheet  
2
Rev.ꢀ2.5,ꢀꢀ2020-06-17  
OptiMOSTMꢀPower-MOSFET,ꢀ25ꢀV  
BSC009NE2LS  
1ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
-
-
-
-
-
-
-
-
-
-
255  
161  
221  
139  
41  
VGS=10ꢀV,ꢀTC=25ꢀ°C  
VGS=10ꢀV,ꢀTC=100ꢀ°C  
VGS=4.5ꢀV,ꢀTC=25ꢀ°C  
Continuous drain current1)  
ID  
A
VGS=4.5ꢀV,ꢀTC=100ꢀ°C  
VGS=10ꢀV,ꢀTA=25ꢀ°C,ꢀRthJA=50ꢀK/W2)  
Pulsed drain current3)  
ID,pulse  
IAS  
-
-
-
-
-
1020  
50  
A
TC=25ꢀ°C  
Avalanche current, single pulse4)  
Avalanche energy, single pulse  
Gate source voltage  
-
A
TC=25ꢀ°C  
EAS  
VGS  
-
190  
20  
mJ  
V
ID=50ꢀA,ꢀRGS=25ꢀΩ  
-20  
-
-
-
-
-
96  
2.5  
TC=25ꢀ°C  
Power dissipation  
Ptot  
W
TA=25ꢀ°C,ꢀRthJA=50ꢀK/W2)  
IEC climatic category;  
DIN IEC 68-1: 55/150/56  
Operating and storage temperature  
Tj,ꢀTstg  
-55  
-
150  
°C  
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Thermal resistance, junction - case  
RthJC  
RthJC  
-
1.3  
K/W  
K/W  
-
-
Thermal resistance, junction - case,  
top  
-
-
-
-
20  
50  
Device on PCB,  
RthJA  
K/W  
-
6 cm2 cooling area2)  
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature  
at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual  
environmental conditions.  
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain  
connection. PCB is vertical in still air.  
3) See Diagram 3 for more detailed information  
4) See Diagram 13 for more detailed information  
Final Data Sheet  
3
Rev.ꢀ2.5,ꢀꢀ2020-06-17  
OptiMOSTMꢀPower-MOSFET,ꢀ25ꢀV  
BSC009NE2LS  
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
25  
1
Typ.  
Max.  
-
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
VGS(th)  
-
-
V
V
VGS=0ꢀV,ꢀID=1ꢀmA  
2.2  
VDS=VGS,ꢀID=250ꢀµA  
-
-
0.1  
10  
10  
100  
VDS=25ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C  
VDS=25ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C  
Zero gate voltage drain current  
Gate-source leakage current  
Drain-source on-state resistance  
IDSS  
µA  
nA  
IGSS  
-
10  
100  
VGS=20ꢀV,ꢀVDS=0ꢀV  
-
-
1.0  
0.75  
1.2  
0.9  
VGS=4.5ꢀV,ꢀID=30ꢀA  
VGS=10ꢀV,ꢀID=30ꢀA  
RDS(on)  
mΩ  
Gate resistance  
RG  
gfs  
0.4  
85  
0.8  
1.6  
-
Ω
-
Transconductance  
170  
S
|VDS|>2|ID|RDS(on)max,ꢀID=30ꢀA  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance1)  
Output capacitance1)  
Ciss  
Coss  
Crss  
-
-
-
5800 7714 pF  
1900 2527 pF  
VGS=0ꢀV,ꢀVDS=12ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=12ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=12ꢀV,ꢀf=1ꢀMHz  
Reverse transfer capacitance  
1700  
10  
-
-
pF  
ns  
VDD=12ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
VDD=12ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,  
RG,ext=1.6ꢀΩ  
33  
48  
19  
-
-
-
ns  
ns  
ns  
VDD=12ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,  
RG,ext=1.6ꢀΩ  
Turn-off delay time  
Fall time  
VDD=12ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,  
RG,ext=1.6ꢀΩ  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ  
Values  
Typ.  
14  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
19  
-
Gate to source charge1)  
Gate charge at threshold  
Gate to drain charge1)  
Switching charge  
Qgs  
-
-
-
-
-
-
-
-
-
nC  
nC  
nC  
nC  
nC  
V
VDD=12ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=12ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=12ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=12ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=12ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=12ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
VDD=12ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDS=0.1ꢀV,ꢀVGS=0ꢀtoꢀ4.5ꢀV  
Qg(th)  
Qgd  
9
37  
56  
-
Qsw  
41  
Gate charge total1)  
Qg  
72  
96  
-
Gate plateau voltage  
Gate charge total1)  
Vplateau  
Qg  
2.3  
126  
43  
168  
-
nC  
nC  
nC  
Gate charge total, sync. FET  
Output charge1)  
Qg(sync)  
Qoss  
38  
51  
VDD=12ꢀV,ꢀVGS=0ꢀV  
1) Defined by design. Not subject to production test  
2) See ″Gate charge waveforms″ for parameter definition  
Final Data Sheet  
4
Rev.ꢀ2.5,ꢀꢀ2020-06-17  
OptiMOSTMꢀPower-MOSFET,ꢀ25ꢀV  
BSC009NE2LS  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
-
Max.  
100  
1020  
1
Diode continuous forward current  
Diode pulse current  
IS  
-
-
-
-
A
TC=25ꢀ°C  
IS,pulse  
VSD  
Qrr  
-
A
TC=25ꢀ°C  
Diode forward voltage  
0.8  
20  
V
VGS=0ꢀV,ꢀIF=30ꢀA,ꢀTj=25ꢀ°C  
VR=15ꢀV,ꢀIF=IS,ꢀdiF/dt=400ꢀA/µs  
Reverse recovery charge  
-
nC  
Final Data Sheet  
5
Rev.ꢀ2.5,ꢀꢀ2020-06-17  
OptiMOSTMꢀPower-MOSFET,ꢀ25ꢀV  
BSC009NE2LS  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀDrainꢀcurrent  
120  
280  
240  
200  
160  
120  
80  
100  
80  
60  
40  
20  
0
40  
0
0
40  
80  
120  
160  
0
20  
40  
60  
80  
100  
120  
140  
160  
TCꢀ[°C]  
TCꢀ[°C]  
Ptot=f(TC)  
ID=f(TC);ꢀVGS≥10ꢀV  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
104  
101  
103  
102  
101  
100  
1 µs  
10 µs  
0.5  
100 µs  
0.2  
0.1  
1 ms  
10-1  
0.05  
10 ms  
0.02  
0.01  
DC  
10-2  
single pulse  
100  
10-1  
10-3  
10-1  
100  
101  
102  
10-6  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
6
Rev.ꢀ2.5,ꢀꢀ2020-06-17  
OptiMOSTMꢀPower-MOSFET,ꢀ25ꢀV  
BSC009NE2LS  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
800  
2.0  
10 V  
4.5 V  
4 V  
5 V  
700  
600  
500  
400  
300  
200  
3.2 V  
1.5  
3.5 V  
4 V  
3.5 V  
4.5 V  
1.0  
5 V  
7 V  
8 V  
3.2 V  
3 V  
10 V  
0.5  
2.8 V  
100  
0
0.0  
0
1
2
3
0
10  
20  
30  
40  
50  
VDSꢀ[V]  
IDꢀ[A]  
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(ID);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance  
400  
400  
320  
240  
160  
80  
320  
240  
160  
80  
150 °C  
25 °C  
0
0
0
1
2
3
4
5
0
40  
80  
120  
160  
VGSꢀ[V]  
IDꢀ[A]  
ID=f(VGS);ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj  
gfs=f(ID);ꢀTj=25ꢀ°C  
Final Data Sheet  
7
Rev.ꢀ2.5,ꢀꢀ2020-06-17  
OptiMOSTMꢀPower-MOSFET,ꢀ25ꢀV  
BSC009NE2LS  
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance  
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage  
3.0  
2.5  
2.5  
2.0  
1.5  
1.0  
2.0  
1.5  
1.0  
0.5  
0.0  
250 µA  
typ  
0.5  
0.0  
-60  
-20  
20  
60  
100  
140  
180  
-60  
-20  
20  
60  
100  
140  
180  
Tjꢀ[°C]  
Tjꢀ[°C]  
RDS(on)=f(Tj);ꢀID=30ꢀA;ꢀVGS=10ꢀV  
VGS(th)=f(Tj);ꢀVGS=VDS;ꢀID=250ꢀµA  
Diagramꢀ11:ꢀTyp.ꢀcapacitances  
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
104  
104  
25 °C  
25 °C, max  
150 °C  
Ciss  
150 °C, max  
103  
102  
101  
100  
Coss  
Crss  
103  
102  
0
5
10  
15  
20  
25  
0.00  
0.25  
0.50  
0.75  
1.00  
1.25  
1.50  
VDSꢀ[V]  
VSDꢀ[V]  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz  
IF=f(VSD);ꢀparameter:ꢀTj  
Final Data Sheet  
8
Rev.ꢀ2.5,ꢀꢀ2020-06-17  
OptiMOSTMꢀPower-MOSFET,ꢀ25ꢀV  
BSC009NE2LS  
Diagramꢀ13:ꢀAvalancheꢀcharacteristics  
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge  
102  
12  
12 V  
20 V  
10  
8
25 °C  
5 V  
100 °C  
125 °C  
101  
6
4
2
100  
0
100  
101  
102  
103  
0
20  
40  
60  
80  
100  
120  
140  
tAVꢀ[µs]  
Qgateꢀ[nC]  
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj(start)  
VGS=f(Qgate);ꢀID=30ꢀAꢀpulsed;ꢀparameter:ꢀVDD  
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage  
Diagram Gate charge waveforms  
28  
27  
26  
25  
24  
23  
22  
21  
20  
-60  
-20  
20  
60  
100  
140  
180  
Tjꢀ[°C]  
VBR(DSS)=f(Tj);ꢀID=1ꢀmA  
Final Data Sheet  
9
Rev.ꢀ2.5,ꢀꢀ2020-06-17  
OptiMOSTMꢀPower-MOSFET,ꢀ25ꢀV  
BSC009NE2LS  
5ꢀꢀꢀꢀꢀPackageꢀOutlines  
DOCUMENT NO.  
Z8B00003332  
REVISION  
07  
MILLIMETERS  
DIMENSION  
MIN.  
0.90  
0.15  
0.34  
4.80  
3.90  
0.03  
5.70  
5.90  
3.88  
MAX.  
1.20  
0.35  
0.54  
5.35  
4.40  
0.23  
6.10  
6.42  
4.31  
SCALE 10:1  
A
A1  
b
3mm  
0
1
2
D
D1  
D2  
E
EUROPEAN PROJECTION  
E1  
E2  
e
1.27  
L
0.45  
0.45  
0.71  
0.69  
ISSUE DATE  
06.06.2019  
M
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TDSON-8,ꢀdimensionsꢀinꢀmm  
Final Data Sheet  
10  
Rev.ꢀ2.5,ꢀꢀ2020-06-17  
OptiMOSTMꢀPower-MOSFET,ꢀ25ꢀV  
BSC009NE2LS  
PG-TDSON-8: Recommended Boardpads & Apertures  
1.905  
1.905  
1.27  
3x  
0.6  
1.27  
3x  
0.5  
1.6  
0.2  
1.5  
0.5  
1.27  
3x  
1.27  
3x  
0.4  
1.905  
1.905  
copper  
solder mask  
stencil apertures  
all dimensions in mm  
Figure 2 Outline Boardpads (TDSON-8), dimensions in mm  
Final Data Sheet  
11  
Rev.ꢀ2.5,ꢀꢀ2020-06-17  
OptiMOSTM Power-MOSFET , 25 V  
BSC009NE2LS  
Dimension in mm  
Figure 3 Outline Tape (TDSON-8)  
Final Data Sheet  
12  
Rev. 2.5, 2020-06-17  
OptiMOSTM Power-MOSFET , 25 V  
BSC009NE2LS  
Revision History  
BSC009NE2LS  
Revision: 2020-06-17, Rev. 2.5  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
2.4  
2.5  
Update package drawings and footnotes  
Update current rating  
2020-02-24  
2020-06-17  
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Final Data Sheet  
13  
Rev. 2.5, 2020-06-17  

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