BSC035N04LS G [INFINEON]
OptiMOS™ 40V 是交换模式电源 (SMPS)中的同步整流的理想之选，例如服务器和台式机。此外，这些器件可用于电机控制变器和快速开关直流-直流转换器等广泛工业应用。;
| 型号： | BSC035N04LS G |
| 厂家： | 
Infineon |
| 描述： | OptiMOS™ 40V 是交换模式电源 (SMPS)中的同步整流的理想之选，例如服务器和台式机。此外，这些器件可用于电机控制变器和快速开关直流-直流转换器等广泛工业应用。 开关 电机 服务器 转换器 |
| 文件： | 总12页 (文件大小：1096K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSC035N04LSꢀG
MOSFET
OptiMOSTMꢀ3ꢀPower-Transistor,ꢀ40ꢀV
SuperSO8
5
8
6
7
7
Features
6
5
8
•ꢀFastꢀswitchingꢀMOSFETꢀforꢀSMPS
•ꢀOptimizedꢀtechnologyꢀforꢀDC/DCꢀconverters
•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC1)ꢀꢀforꢀtargetꢀapplications
•ꢀN-channel;ꢀLogicꢀlevel
•ꢀExcellentꢀgateꢀchargeꢀxꢀRDS(on)ꢀproductꢀ(FOM)
•ꢀVeryꢀlowꢀon-resistanceꢀRDS(on)
4
3
1
2
2
3
1
4
•ꢀSuperiorꢀthermalꢀresistance
•ꢀ100%ꢀAvalancheꢀtested
•ꢀPb-freeꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
S 1
8 D
7 D
S 2
S 3
G 4
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
Value
Unit
6 D
5 D
VDS
40
V
RDS(on),max
ID
3.5
mΩ
A
112
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
BSC035N04LS G
PG-TDSON-8
035N04LS
-
1) J-STD20 and JESD22
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2020-08-14
OptiMOSTMꢀ3ꢀPower-Transistor,ꢀ40ꢀV
BSC035N04LSꢀG
TableꢀofꢀContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2020-08-14
OptiMOSTMꢀ3ꢀPower-Transistor,ꢀ40ꢀV
BSC035N04LSꢀG
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
-
-
-
-
-
-
-
-
-
-
112
71
92
58
21
VGS=10ꢀV,ꢀTC=25ꢀ°C
VGS=10ꢀV,ꢀTC=100ꢀ°C
VGS=4.5ꢀV,ꢀTC=25ꢀ°C
Continuous drain current1)
ID
A
VGS=4.5ꢀV,ꢀTC=100ꢀ°C
VGS=10ꢀV,ꢀTA=25ꢀ°C,ꢀRthJA=50ꢀK/W2)
Pulsed drain current3)
ID,pulse
IAS
-
-
-
-
-
448
50
A
TC=25ꢀ°C
Avalanche current, single pulse4)
Avalanche energy, single pulse
Gate source voltage
-
A
TC=25ꢀ°C
EAS
VGS
-
65
mJ
V
ID=50ꢀA,ꢀRGS=25ꢀΩ
-20
20
-
-
-
-
-
69
2.5
TC=25ꢀ°C
Power dissipation
Ptot
W
TA=25ꢀ°C,ꢀRthJA=50ꢀK/W2)
IEC climatic category;
DIN IEC 68-1: 55/150/56
Operating and storage temperature
Tj,ꢀTstg
-55
-
150
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction - case,
bottom
RthJC
RthJC
RthJA
-
-
-
-
1.8
K/W
K/W
K/W
-
-
-
Thermal resistance, junction - case,
top
-
-
18
50
Device on PCB,
6 cm2 cooling area2)
1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature
at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual
environmental conditions.
2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3) See Diagram 3 for more detailed information
4) See Diagram 13 for more detailed information
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2020-08-14
OptiMOSTMꢀ3ꢀPower-Transistor,ꢀ40ꢀV
BSC035N04LSꢀG
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
40
Typ.
Max.
Drain-source breakdown voltage
Gate threshold voltage
V(BR)DSS
VGS(th)
-
-
-
V
V
VGS=0ꢀV,ꢀID=1ꢀmA
VDS=VGS,ꢀID=36ꢀµA
1.2
2
-
-
0.1
10
1
100
VDS=40ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C
VDS=40ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
IDSS
µA
nA
IGSS
-
10
100
VGS=20ꢀV,ꢀVDS=0ꢀV
-
-
4.2
2.9
5.3
3.5
VGS=4.5ꢀV,ꢀID=50ꢀA
VGS=10ꢀV,ꢀID=50ꢀA
RDS(on)
mΩ
Gate resistance
RG
gfs
-
1.5
-
-
Ω
-
Transconductance
60
120
S
|VDS|>2|ID|RDS(on)max,ꢀID=50ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance1)
Output capacitance1)
Ciss
Coss
Crss
-
-
-
3800 5100 pF
VGS=0ꢀV,ꢀVDS=20ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=20ꢀV,ꢀf=1ꢀMHz
VGS=0ꢀV,ꢀVDS=20ꢀV,ꢀf=1ꢀMHz
820
44
1100 pF
Reverse transfer capacitance
-
-
pF
ns
VDD=20ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,
RG=1.6ꢀΩ
Turn-on delay time
Rise time
td(on)
tr
td(off)
tf
-
-
-
-
7.9
4.6
31
VDD=20ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,
RG=1.6ꢀΩ
-
-
-
ns
ns
ns
VDD=20ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,
RG=1.6ꢀΩ
Turn-off delay time
Fall time
VDD=20ꢀV,ꢀVGS=10ꢀV,ꢀID=30ꢀA,
RG=1.6ꢀΩ
5.0
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ
Values
Typ.
12
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Qgs
-
-
-
-
-
-
-
-
-
-
nC
nC
nC
nC
nC
V
VDD=20ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=20ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=20ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=20ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=20ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=20ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV
VDD=20ꢀV,ꢀID=30ꢀA,ꢀVGS=0ꢀtoꢀ4.5ꢀV
VDS=0.1ꢀV,ꢀVGS=0ꢀtoꢀ10ꢀV
Qg(th)
Qgd
6.1
5.0
11
-
-
Qsw
-
Gate charge total1)
Qg
48
64
-
Gate plateau voltage
Gate charge total1)
Vplateau
Qg
3.1
23
31
-
nC
nC
nC
Gate charge total, sync. FET
Output charge
Qg(sync)
Qoss
45
31
-
VDD=20ꢀV,ꢀVGS=0ꢀV
1) Defined by design. Not subject to production test
2) See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2020-08-14
OptiMOSTMꢀ3ꢀPower-Transistor,ꢀ40ꢀV
BSC035N04LSꢀG
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
-
Max.
58
Diode continuous forward current
Diode pulse current
IS
-
-
-
-
A
TC=25ꢀ°C
IS,pulse
VSD
Qrr
-
448
1.2
-
A
TC=25ꢀ°C
Diode forward voltage
0.84
35
V
VGS=0ꢀV,ꢀIF=50ꢀA,ꢀTj=25ꢀ°C
VR=20ꢀV,ꢀIF=IS,ꢀdiF/dt=400ꢀA/µs
Reverse recovery charge
nC
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2020-08-14
OptiMOSTMꢀ3ꢀPower-Transistor,ꢀ40ꢀV
BSC035N04LSꢀG
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
80
120
70
60
50
40
30
20
10
0
100
80
60
40
20
0
0
40
80
120
160
0
20
40
60
80
100
120
140
160
TCꢀ[°C]
TCꢀ[°C]
Ptot=f(TC)
ID=f(TC);ꢀVGS≥10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
103
101
1 µs
10 µs
102
101
100
10-1
100
100 µs
0.5
0.2
0.1
1 ms
10 ms
10-1
0.05
DC
0.02
0.01
single pulse
10-2
10-1
100
101
102
10-6
10-5
10-4
10-3
10-2
10-1
100
VDSꢀ[V]
tpꢀ[s]
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2020-08-14
OptiMOSTMꢀ3ꢀPower-Transistor,ꢀ40ꢀV
BSC035N04LSꢀG
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
300
10
4.5 V
3.2 V
10 V
5 V
250
200
150
100
50
8
3.5 V
6
4 V
4 V
4
4.5 V
5 V
10 V
3.5 V
2
3.2 V
3 V
2.8 V
0
0
0
1
2
3
0
10
20
30
40
50
VDSꢀ[V]
IDꢀ[A]
ID=f(VDS);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
RDS(on)=f(ID);ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance
300
250
25 °C
250
200
150
100
50
200
150
100
50
150 °C
0
0
0
1
2
3
4
5
0
40
80
120
160
VGSꢀ[V]
IDꢀ[A]
ID=f(VGS);ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj
gfs=f(ID);ꢀTj=25ꢀ°C
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2020-08-14
OptiMOSTMꢀ3ꢀPower-Transistor,ꢀ40ꢀV
BSC035N04LSꢀG
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
6
2.5
5
2.0
1.5
1.0
0.5
0.0
4
98 %
typ
3
2
1
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
Tjꢀ[°C]
Tjꢀ[°C]
RDS(on)=f(Tj);ꢀID=50ꢀA;ꢀVGS=10ꢀV
VGS(th)=f(Tj);ꢀVGS=VDS;ꢀID=36ꢀµA
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
105
103
25 °C
25 °C, max
150 °C
150 °C, max
104
103
102
101
102
101
100
Ciss
Coss
Crss
0
10
20
30
40
0.0
0.5
1.0
1.5
2.0
VDSꢀ[V]
VSDꢀ[V]
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz
IF=f(VSD);ꢀparameter:ꢀTj
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2020-08-14
OptiMOSTMꢀ3ꢀPower-Transistor,ꢀ40ꢀV
BSC035N04LSꢀG
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
102
12
10
8
25 °C
100 °C
125 °C
20 V
101
6
8 V
32 V
4
2
0
100
100
101
102
103
0
10
20
30
40
50
tAVꢀ[µs]
Qgateꢀ[nC]
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj(start)
VGS=f(Qgate);ꢀID=30ꢀAꢀpulsed;ꢀparameter:ꢀVDD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
45
40
35
30
25
20
-60
-20
20
60
100
140
180
Tjꢀ[°C]
VBR(DSS)=f(Tj);ꢀID=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2020-08-14
OptiMOSTMꢀ3ꢀPower-Transistor,ꢀ40ꢀV
BSC035N04LSꢀG
5ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TDSON-8,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2020-08-14
OptiMOSTMꢀ3ꢀPower-Transistor,ꢀ40ꢀV
BSC035N04LSꢀG
Figureꢀ2ꢀꢀꢀꢀꢀOutlineꢀTapeꢀ(PG-TDSON-8),ꢀdimensionsꢀinꢀmm
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2020-08-14
OptiMOSTMꢀ3ꢀPower-Transistor,ꢀ40ꢀV
BSC035N04LSꢀG
RevisionꢀHistory
BSC035N04LS G
Revision:ꢀ2020-08-14,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
Subjects (major changes since last revision)
Update current rating and footnotes
2.0
2020-08-14
Trademarks
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informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.
Information
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon
TechnologiesꢀOfficeꢀ(www.infineon.com).
Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
12
Rev.ꢀ2.0,ꢀꢀ2020-08-14
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