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BSC076N04ND [INFINEON]

OptiMOS™ power transistor 40V;
BSC076N04ND
型号： BSC076N04ND
厂家： Infineon    Infineon
描述：

OptiMOS™ power transistor 40V
文件： 总11页 (文件大小：1188K)
中文：  中文翻译
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BSC076N04ND  
MOSFET  
OptiMOSTM-T2ꢀPowerꢀTransistor,ꢀ40ꢀV  
PG-TDSON-8-4  
8
4
1
7
6
5
2
Features  
·ꢀDualꢀN-channel,ꢀnormalꢀlevel  
·ꢀFastꢀswitchingꢀMOSFETs  
·ꢀOptimizedꢀtechnologyꢀforꢀdrivesꢀapplications  
·ꢀSuperiorꢀthermalꢀresistance  
3
4
1
8
7
6
2
·ꢀ100%ꢀavalancheꢀtested  
3
5
·ꢀPb-freeꢀplating;ꢀRoHSꢀcompliant  
·ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21  
ProductꢀValidation  
Qualifiedꢀforꢀindustrialꢀapplicationsꢀaccordingꢀtoꢀtheꢀrelevantꢀtestsꢀof  
JEDEC47/20/22  
D1 D1 D2 D2  
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  
Parameter  
Value  
Unit  
VDS  
40  
V
S1 G1 S2 G2  
RDS(on),max  
ID  
7.6  
mΩ  
A
20  
Typeꢀ/ꢀOrderingꢀCode  
Package  
SSO8 dual (TDSON-8-4)  
Marking  
RelatedꢀLinks  
BSC076N04ND  
076N04ND  
-
Final Data Sheet  
1
Rev.ꢀ2.0,ꢀꢀ2018-12-11  
OptiMOSTM-T2ꢀPowerꢀTransistor,ꢀ40ꢀV  
BSC076N04ND  
TableꢀofꢀContents  
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Final Data Sheet  
2
Rev.ꢀ2.0,ꢀꢀ2018-12-11  
OptiMOSTM-T2ꢀPowerꢀTransistor,ꢀ40ꢀV  
BSC076N04ND  
1ꢀꢀꢀꢀꢀMaximumꢀratings  
atꢀTA=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified,ꢀoneꢀtransistorꢀactive  
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
Max.  
20  
Continuous drain current  
Pulsed drain current1)  
Avalanche energy, single pulse2)  
ID  
-
-
-
-
-
A
VGS=10ꢀV,ꢀTC=25ꢀ°C  
TA=25ꢀ°C  
ID,pulse  
EAS  
VGS  
-
80  
A
-
87  
mJ  
V
ID=10ꢀA,ꢀRGS=25ꢀΩ  
-
Gate source voltage  
-20  
20  
-
-
-
-
65  
2.3  
TC=25ꢀ°C  
Power dissipation  
Ptot  
W
TA=25ꢀ°C,ꢀRTHJA=65ꢀ°C/W3)  
IEC climatic category; DIN IEC 68-1:  
55/175/56  
Operating and storage temperature  
Tj,ꢀTstg  
-55  
-
175  
°C  
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Thermal resistance, junction - case,  
bottom  
RthJC  
RthJA  
RthJA  
-
-
-
-
2.3  
°C/W -  
°C/W -  
°C/W -  
Device on PCB,  
-
-
60  
6 cm² cooling area3)  
Device on PCB,  
100  
minimal footprint4)  
1) See Diagram 3 for more detailed information  
2) See Diagram 13 for more detailed information  
3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.  
PCB is vertical in still air.  
4) device mounted on a minimum pad (one layer, 70 µm thick)  
Final Data Sheet  
3
Rev.ꢀ2.0,ꢀꢀ2018-12-11  
OptiMOSTM-T2ꢀPowerꢀTransistor,ꢀ40ꢀV  
BSC076N04ND  
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  
atꢀTj=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified  
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  
Values  
Typ.  
-
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
40  
Max.  
-
Drain-source breakdown voltage  
Gate threshold voltage  
V(BR)DSS  
VGS(th)  
V
V
VGS=0ꢀV,ꢀID=1ꢀmA  
VDS=VGS,ꢀID=30ꢀµA  
2.0  
3.0  
4.0  
-
-
0.1  
10  
1
100  
VDS=40ꢀV,ꢀVGS=0ꢀV,ꢀTj=25ꢀ°C  
VDS=40ꢀV,ꢀVGS=0ꢀV,ꢀTj=125ꢀ°C  
Zero gate voltage drain current  
IDSS  
µA  
nA  
Gate-source leakage current  
IGSS  
-
-
-
100  
7.6  
VGS=20ꢀV,ꢀVDS=0ꢀV  
Drain-source on-state resistance  
RDS(on)  
7.0  
mΩ VGS=10ꢀV,ꢀID=17ꢀA  
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  
Values  
Typ.  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
Input capacitance1)  
Output capacitance1)  
Reverse transfer capacitance1)  
Ciss  
Coss  
Crss  
-
-
-
2270 2950 pF  
VGS=0ꢀV,ꢀVDS=20ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=20ꢀV,ꢀf=1ꢀMHz  
VGS=0ꢀV,ꢀVDS=20ꢀV,ꢀf=1ꢀMHz  
670  
24  
870  
48  
pF  
pF  
VDD=20ꢀV,ꢀVGS=10ꢀV,ꢀID=20ꢀA,  
RG,ext=11ꢀΩ  
Turn-on delay time  
Rise time  
td(on)  
tr  
td(off)  
tf  
-
-
-
-
13  
4
-
-
-
-
ns  
ns  
ns  
ns  
VDD=20ꢀV,ꢀVGS=10ꢀV,ꢀID=20ꢀA,  
RG,ext=11ꢀΩ  
VDD=20ꢀV,ꢀVGS=10ꢀV,ꢀID=20ꢀA,  
RG,ext=11ꢀΩ  
Turn-off delay time  
Fall time  
22  
7
VDD=20ꢀV,ꢀVGS=10ꢀV,ꢀID=20ꢀA,  
RG,ext=11ꢀΩ  
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics2)ꢀ  
Values  
Typ.  
12  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Max.  
16  
7
Gate to source charge  
Gate to drain charge  
Gate charge total1)  
Qgs  
-
-
-
-
nC  
nC  
nC  
V
VDD=20ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=20ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=20ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
VDD=20ꢀV,ꢀID=20ꢀA,ꢀVGS=0ꢀtoꢀ10ꢀV  
Qgd  
4
Qg  
28  
38  
-
Gate plateau voltage  
Vplateau  
5.2  
1) Defined by design. Not subject to production test.  
2) See ″Gate charge waveforms″ for parameter definition  
Final Data Sheet  
4
Rev.ꢀ2.0,ꢀꢀ2018-12-11  
OptiMOSTM-T2ꢀPowerꢀTransistor,ꢀ40ꢀV  
BSC076N04ND  
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode  
Values  
Parameter  
Symbol  
Unit Noteꢀ/ꢀTestꢀCondition  
Min.  
Typ.  
-
Max.  
20  
80  
1.1  
-
Diode continuous forward current  
Diode pulse current  
IS  
-
-
-
-
-
A
TC=25ꢀ°C  
IS,pulse  
VSD  
trr  
-
A
TC=25ꢀ°C  
Diode forward voltage  
0.9  
35  
35  
V
VGS=0ꢀV,ꢀIF=17ꢀA,ꢀTj=25ꢀ°C  
VR=15ꢀV,ꢀIF=9ꢀA,ꢀdiF/dt=100ꢀA/µs  
VR=15ꢀV,ꢀIF=9ꢀA,ꢀdiF/dt=100ꢀA/µs  
Reverse recovery time1)  
Reverse recovery charge1)  
ns  
nC  
Qrr  
-
1) Defined by design. Not subject to production test.  
Final Data Sheet  
5
Rev.ꢀ2.0,ꢀꢀ2018-12-11  
OptiMOSTM-T2ꢀPowerꢀTransistor,ꢀ40ꢀV  
BSC076N04ND  
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  
Diagramꢀ1:ꢀPowerꢀdissipation  
Diagramꢀ2:ꢀDrainꢀcurrent  
70  
70  
silicon limit  
60  
50  
40  
30  
20  
10  
0
60  
50  
40  
30  
20  
package limit  
10  
0
0
25  
50  
75  
100  
125  
150  
175  
200  
0
25  
50  
75  
100  
125  
150  
175  
200  
TAꢀ[°C]  
TAꢀ[°C]  
Ptot=f(TA),ꢀminimalꢀfootprint  
ID=f(TA);ꢀminimalꢀfootprint  
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  
102  
101  
1 µs  
single pulse  
0.01  
0.02  
10 µs  
10 ms  
100 µs  
0.05  
DC  
0.1  
0.2  
0.5  
101  
100  
10-1  
10-2  
1 ms  
100  
10-1  
10-2  
10-1  
100  
101  
102  
10-5  
10-4  
10-3  
10-2  
10-1  
100  
VDSꢀ[V]  
tpꢀ[s]  
ID=f(VDS);ꢀTC=25ꢀ°C;ꢀD=0;ꢀparameter:ꢀtp  
ZthJC=f(tp);ꢀparameter:ꢀD=tp/T  
Final Data Sheet  
6
Rev.ꢀ2.0,ꢀꢀ2018-12-11  
OptiMOSTM-T2ꢀPowerꢀTransistor,ꢀ40ꢀV  
BSC076N04ND  
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
80  
50  
6.25 V  
6.5 V  
5 V  
6 V  
70  
6 V  
5.5 V  
40  
10 V  
60  
50  
40  
30  
20  
10  
0
30  
20  
10  
0
5.5 V  
6.5 V  
10 V  
5 V  
0.0  
2.0  
4.0  
6.0  
8.0  
0
10  
20  
30  
40  
50  
60  
70  
80  
VDSꢀ[V]  
IDꢀ[A]  
ID=f(VDS),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
RDS(on)=f(ID),ꢀTj=25ꢀ°C;ꢀparameter:ꢀVGS  
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics  
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance  
80  
24  
70  
60  
50  
40  
30  
20  
20  
16  
12  
8
175 °C  
25 °C  
4
10  
175 °C  
25 °C  
0
0
0
1
2
3
4
5
6
7
0
2
4
6
8
10  
VGSꢀ[V]  
VGSꢀ[V]  
ID=f(VGS),ꢀ|VDS|>2|ID|RDS(on)max;ꢀparameter:ꢀTj  
RDS(on)=f(VGS),ꢀID=17ꢀA;ꢀparameter:ꢀTj  
Final Data Sheet  
7
Rev.ꢀ2.0,ꢀꢀ2018-12-11  
OptiMOSTM-T2ꢀPowerꢀTransistor,ꢀ40ꢀV  
BSC076N04ND  
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance  
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage  
1.8  
4.0  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
3.5  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
300 µA  
30 µA  
-80  
-40  
0
40  
80  
120  
160  
200  
-80  
-40  
0
40  
80  
120  
160  
200  
Tjꢀ[°C]  
Tjꢀ[°C]  
RDS(on)=f(Tj),ꢀID=17ꢀA,ꢀVGS=10ꢀV  
VGS(th=f(Tj),ꢀVGS=VDS;ꢀparameter:ꢀID  
Diagramꢀ11:ꢀTyp.ꢀcapacitances  
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  
104  
102  
25 °C  
25 °C, max  
175 °C  
175 °C, max  
Ciss  
103  
102  
101  
100  
101  
Coss  
100  
Crss  
10-1  
0
5
10  
15  
20  
25  
30  
35  
40  
0.00  
0.25  
0.50  
0.75  
1.00  
1.25  
1.50  
VDSꢀ[V]  
VSDꢀ[V]  
C=f(VDS);ꢀVGS=0ꢀV;ꢀf=1ꢀMHz  
IF=f(VSD);ꢀparameter:ꢀTj  
Final Data Sheet  
8
Rev.ꢀ2.0,ꢀꢀ2018-12-11  
OptiMOSTM-T2ꢀPowerꢀTransistor,ꢀ40ꢀV  
BSC076N04ND  
Diagramꢀ13:ꢀAvalancheꢀcharacteristics  
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge  
102  
10  
8 V  
20 V  
32 V  
8
6
4
2
0
101  
25 °C  
100 °C  
150 °C  
100  
10-1  
100  
101  
102  
103  
0
5
10  
15  
20  
25  
30  
tAVꢀ[µs]  
Qgateꢀ[nC]  
IAS=f(tAV);ꢀRGS=25ꢀΩ;ꢀparameter:ꢀTj,start  
VGS=f(Qgate),ꢀID=20ꢀAꢀpulsed,ꢀTj=25ꢀ°C;ꢀparameter:ꢀVDD  
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage  
Diagram Gate charge waveforms  
44  
43  
42  
41  
40  
39  
38  
-80  
-40  
0
40  
80  
120  
160  
200  
Tjꢀ[°C]  
VBR(DSS)=f(Tj);ꢀID=1ꢀmA  
Final Data Sheet  
9
Rev.ꢀ2.0,ꢀꢀ2018-12-11  
OptiMOSTM-T2ꢀPowerꢀTransistor,ꢀ40ꢀV  
BSC076N04ND  
5ꢀꢀꢀꢀꢀPackageꢀOutlines  
MILLIMETERS  
DIMENSIONS  
MIN.  
0.90  
0.15  
0.34  
0.02  
4.95  
4.20  
0.50  
5.95  
5.70  
4.075  
4.035  
0.15  
MAX.  
1.10  
0.35  
0.54  
0.22  
5.35  
4.40  
0.70  
6.35  
6.10  
4.275  
4.235  
0.35  
DOCUMENT NO.  
Z8B00189767  
A
A1  
b
REVISION  
01  
b1  
D
D1  
D2  
E
SCALE 5:1  
4mm  
0
1
2
3
E1  
E2  
E3  
E4  
e
EUROPEAN PROJECTION  
1.27  
L
0.45  
0.45  
8.5°  
0.65  
0.65  
M
Θ
11.5°  
ISSUE DATE  
31.07.2018  
aaa  
ddd  
0.05  
0.10  
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀSSO8ꢀdualꢀ(TDSON-8-4),ꢀdimensionsꢀinꢀmm  
Final Data Sheet  
10  
Rev.ꢀ2.0,ꢀꢀ2018-12-11  
OptiMOSTM-T2ꢀPowerꢀTransistor,ꢀ40ꢀV  
BSC076N04ND  
RevisionꢀHistory  
BSC076N04ND  
Revision:ꢀ2018-12-11,ꢀRev.ꢀ2.0  
Previous Revision  
Revision Date  
Subjects (major changes since last revision)  
Release of final version  
2.0  
2018-12-11  
Trademarks  
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.  
WeꢀListenꢀtoꢀYourꢀComments  
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erratum@infineon.com  
Publishedꢀby  
InfineonꢀTechnologiesꢀAG  
81726ꢀMünchen,ꢀGermany  
©ꢀ2018ꢀInfineonꢀTechnologiesꢀAG  
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Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis  
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe  
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.  
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s  
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct  
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.  
Information  
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon  
TechnologiesꢀOfficeꢀ(www.infineon.com).  
Warnings  
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,  
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.  
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or  
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa  
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand  
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.  
Final Data Sheet  
11  
Rev.ꢀ2.0,ꢀꢀ2018-12-11  

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