BSC093N04LS G [INFINEON]

OptiMOS™ 40V 是交换模式电源 (SMPS)中的同步整流的理想之选，例如服务器和台式机。此外，这些器件可用于电机控制变器和快速开关直流-直流转换器等广泛工业应用。;


型号：	BSC093N04LS G
厂家：	Infineon
描述：	OptiMOS™ 40V 是交换模式电源 (SMPS)中的同步整流的理想之选，例如服务器和台式机。此外，这些器件可用于电机控制变器和快速开关直流-直流转换器等广泛工业应用。开关电机服务器转换器
文件：	总10页 (文件大小：520K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

BSC093N04LS G

OptiMOS™3 Power-Transistor

Product Summary

Features

V_DS

9.3

• Fast switching MOSFET for SMPS

• Optimized technology for DC/DC converters

• Qualified according to JEDEC¹⁾for target applications

R_DS(on),max

I_D

PG-TDSON-8

• N-channel; Logic level

• Excellent gate charge x R _DS(on)product (FOM)

• Very low on-resistance R _DS(on)

• Superior thermal resistance

• 100% Avalanche tested

• Pb-free plating; RoHS compliant

• Halogen-free according to IEC61249-2-21

Type

Package

Marking

BSC093N04LS G

PG-TDSON-8

093N04LS

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

I _D

V _GS=10 V, T _C=25 °C

V _GS=10 V, T _C=100 °C

Continuous drain current

V _GS=4.5 V, T _C=25 °C

V _GS=4.5 V,

T _C=100 °C

V _GS=10 V, T _A=25 °C,

R _thJA=50 K/W²⁾

Pulsed drain current³⁾

I _D,pulse

I _AS

T _C=25 °C

196

Avalanche current, single pulse⁴⁾

Avalanche energy, single pulse

Gate source voltage

T _C=25 °C

E _AS

V _GS

I _D=40 A, R _GS=25 W

±20

¹⁾J-STD20 and JESD22

Rev. 2.1

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BSC093N04LS G

Maximum ratings, at T _j=25 °C, unless otherwise specified

Value

Parameter

Symbol Conditions

Unit

P _tot

T _C=25 °C

Power dissipation

T _A=25 °C,

R _thJA=50 K/W²⁾

2.5

T _j, T _stg

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

-55 ... 150

55/150/56

°C

Values

typ.

Parameter

Symbol Conditions

Unit

min.

max.

Thermal characteristics

R _thJC

Thermal resistance, junction - case

bottom

3.6

K/W

top

6 cm²cooling area²⁾

R _thJA

Device on PCB

Electrical characteristics, at T _j=25 °C, unless otherwise specified

Static characteristics

V _(BR)DSSV _GS=0 V, I _D=1 mA

V _GS(th)V _DS=V _GS, I _D=14 µA

Drain-source breakdown voltage

Gate threshold voltage

1.2

V _DS=40 V, V _GS=0 V,

T _j=25 °C

I _DSS

Zero gate voltage drain current

0.1

µA

V _DS=40 V, V _GS=0 V,

T _j=125 °C

100

I _GSS

V _GS=20 V, V _DS=0 V

Gate-source leakage current

11.0

7.8

100 nA

R _DS(on)V _GS=4.5 V, I _D=20 A

V _GS=10 V, I _D=40 A

R _G

Drain-source on-state resistance

13.7

9.3

Gate resistance

|V _DS|>2|I _D|R _DS(on)max

I _D=40 A

g _fs

Transconductance

²⁾Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

³⁾See figure 3 for more detailed information

⁴⁾See figure 13 for more detailed information

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BSC093N04LS G

Values

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

C _iss

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

1400

340

1900 pF

V _GS=0 V, V _DS=20 V,

f =1 MHz

C _oss

C_rss

t _d(on)

t _r

450

3.6

2.4

V _DD=20 V, V _GS=10 V,

I _D=30 A, R _G,ext=1.6 W

t _d(off)

t _f

Turn-off delay time

Fall time

2.8

Gate Charge Characteristics⁵⁾

Gate to source charge

Gate charge at threshold

Gate to drain charge

Switching charge

Q _gs

4.9

2.3

2.0

4.6

Q _g(th)

Q _gd

V _DD=20 V, I _D=30 A,

V _GS=0 to 10 V

Q _sw

Q _g

Gate charge total

V _plateau

Gate plateau voltage

3.5

V _DD=20 V, I _D=30 A,

V _GS=0 to 4.5 V

Q _g

Gate charge total

8.6

11.4 nC

V _DS=0.1 V,

V _GS=0 to 10 V

Q _g(sync)

Gate charge total, sync. FET

Output charge

Q _oss

V _DD=20 V, V _GS=0 V

Reverse Diode

I _S

Diode continuous forward current

Diode pulse current

T _C=25 °C

I _S,pulse

196

V _GS=0 V, I _F=40 A,

T _j=25 °C

V _SD

Diode forward voltage

0.9

1.2

V _R=20 V, I _F=I _S,

di _F/dt =400 A/µs

Q _rr

Reverse recovery charge

⁵⁾See figure 16 for gate charge parameter definition

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BSC093N04LS G

1 Power dissipation

2 Drain current

P _tot=f(T _C)

I _D=f(T _C); V _GS≥10 V

120

160

120

160

T_C[°C]

3 Safe operating area

I _D=f(V _DS); T _C=25 °C; D =0

parameter: t _p

4 Max. transient thermal impedance

Z _thJC=f(t _p)

parameter: D =t _p/T

10³

limited by on-state

resistance

1 µs

0.5

10²

10 µs

0.2

100 µs

0.1

10¹

0.05

0.02

1 ms

0.01

0.1

10 ms

single pulse

10⁰

10^-1

0.01

10^-1

10⁰

10¹

10²

10^-6

10^-5

10^-4

10^-3

10^-2

10^-1

10⁰

V_DS[V]

t_p[s]

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5 Typ. output characteristics

I _D=f(V _DS); T _j=25 °C

6 Typ. drain-source on resistance

R _DS(on)=f(I _D); T _j=25 °C

parameter: V _GS

120

3.5 V

5 V

4.5 V

10 V

100

4 V

4.5 V

5 V

4 V

10 V

3.5 V

3.2 V

2.8 V

3 V

V_DS[V]

I_D[A]

7 Typ. transfer characteristics

I _D=f(V _GS); |V _DS|>2|I _D|R _DS(on)max

parameter: T _j

8 Typ. forward transconductance

g _fs=f(I _D); T _j=25 °C

120

100

120

100

150 °C

25 °C

120

160

V_GS[V]

I_D[A]

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9 Drain-source on-state resistance

10 Typ. gate threshold voltage

R _DS(on)=f(T _j); I _D=40 A; V _GS=10 V

V _GS(th)=f(T _j); V _GS=V _DS; I _D=14 µA

2.5

98 %

1.5

typ

0.5

-60

-20

100

140

180

-60

-20

100

140

180

T_j[°C]

11 Typ. capacitances

12 Forward characteristics of reverse diode

I _F=f(V _SD

C =f(V _DS); V _GS=0 V; f =1 MHz

)

parameter: T _j

10⁴

1000

10³

10²

10¹

10⁰

Ciss

150 °C, 98%

Coss

100

25 °C

150 °C

25 °C, 98%

Crss

V_DS[V]

0.0

0.5

1.0

1.5

2.0

V_SD[V]

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13 Avalanche characteristics

14 Typ. gate charge

V _GS=f(Q _gate); I _D=30 A pulsed

parameter: V _DD

I _AS=f(t _AV); R _GS=25 W

parameter: T _j(start)

100

20 V

8 V

32 V

25 °C

100 °C

125 °C

0.1

t_AV[µs]

100

1000

Q_gate[nC]

15 Drain-source breakdown voltage

16 Gate charge waveforms

V _BR(DSS)=f(T _j); I _D=1 mA

V _GS

Q_g

V _gs(th)

Q_g(th)

Q_sw

Q_gd

Q_gate

Q_gs

-60

-20

100

140

180

T_j[°C]

Rev. 2.1

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BSC093N04LS G

Package Outline

PG-TDSON-8

PG-TDSON-8: Outline

Footprint

Rev. 2.1

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BSC093N04LS G

Package Outline

PG-TDSON-8: Tape

Dimensions in mm

Rev. 2.1

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BSC093N04LS G

Published by

Infineon Technologies AG

81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of

conditions or characteristics. With respect to any examples or hints given herein, any typical

values stated herein and/or any information regarding the application of the device,

Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,

including without limitation, warranties of non-infringement of intellectual property rights

of any third party.

Information

For further information on technology, delivery terms and conditions and prices, please

contact the nearest Infineon Technologies Office

(www.infineon.com).

Warnings

Due to technical requirements, components may contain dangerous substances. For information

on the types in question, please contact the nearest Infineon Technologies Office.

Infineon Technologies components may be used in life-support devices or systems only with

the express written approval of Infineon Technologies, if a failure of such components can

reasonably be expected to cause the failure of that life-support device or system or to affect

the safety or effectiveness of that device or system. Life support devices or systems are

intended to be implanted in the human body or to support and/or maintain and sustain

and/or protect human life. If they fail, it is reasonable to assume that the health of the user

or other persons may be endangered.

Rev. 2.1

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2013-05-21

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